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Hwang, C.W.;Hong, I.G.;Paik, D.K.;Choi, S.C.
- Journal of the Korean Crystal Growth and Crystal Technology
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- v.4 no.4
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- pp.363-369
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- 1994
Bimuth telluride base thermoelectrics are prepared by AC current applied hot pressing method. It is possible to minimize the defects arising from the vaporization of Te, thanks to the very short processing time compared to the single crystal growing method. The optimum conditions for the AC applied hot pressing of 95 mol% $Bi_2Te_3-5 mol% Bi_2Se_3$ thermoelectrics are sintering at $400^{\circ}C$, for 2 minutes, under 1500 kgf/$\textrm{cm}^2$, with the particle size of $125 to 250 {\mu}m$, range of powder. The resultant Z value (figure of merit) was $2.2{\times}10^{-3}/K$.
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Park, S.C.;D.G.Baik;Hwang, C.W.
- Proceedings of the Korea Association of Crystal Growth Conference
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- 1996.06a
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- pp.516-518
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- 1996
Bimuth telluride type thermoelectrics are prepared by AC current applied got pressing method. It is possible to minimize the defects arising from the vaporization of Te, because of the very short processing time. The optimum conditions for the got pressing of 95mol% $Bi_2Te_3$-5mol%$Bi_2Se_3$ themoelectrics are sintered at $400^{\circ}C$, for 2min. with 1500 kgf/$cm^2$ from the particle size of 125 to 250 $\mu$m rang of powder. the resulted Z value (figure of merit) was 2.2$\times$10-3deg-1.
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Kim, Min-Young;Park, Kyung-Won;Oh, Tae-Sung
- Korean Journal of Metals and Materials
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- v.47 no.4
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- pp.248-255
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- 2009
A micro thermoelectric device was processed by electroplating the n-type Bi-Te nanowires and ptype Sb-Te nanowires into an alumina template with 200 nm pores. Power generation characteristics of the micro devices composed of the Bi-Te nanowires, the Sb-Te nanowires, and both the Bi-Te and the Sb-Te nanowires were analyzed with applying a temperature difference of $40^{\circ}C$ across the devices along the thickness direction. The n-type Bi-Te and the p-type Sb-Te nanowire devices exhibited thermoelectric power outputs of $3.8{\times}10^{-10}W$ and $4.8{\times}10^{-10}W$, respectively. The output power of the device composed of both the Bi-Te and the Sb-Te nanowires decreased to $1.4{\times}10^{-10}W$ due to a large electrical resistance of the Cu electrode connecting the Bi-Te nanowire array with the Sb-Te nanowire array.
KSCI

Kim, Min-Young;Lim, Su-Kyum;Oh, Tae-Sung
- Journal of the Microelectronics and Packaging Society
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- v.15 no.4
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- pp.41-49
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- 2008
Thermoelectric properties of the n-type Bi-Te and the p-type Bi-Sb-Te films were measured and the growth behaviors of the electrodeposited Bi-Te and Bi-Sb-Te nanowires were characterized. Filling ratios of 81% and 77% were obtained for electrodeposition of the Bi-Te and the Bi-Sb-Te nanowires, respectively, into the nano pores of 200 nm-diameter of an alumina template. A thermoelectric module, composed of the Bi-Te nanowires and the Bi-Sb-Te nanowires was processed by electrodeposition, and a resistance value of $15{\Omega}$ was measured between the Ni electrodes formed on the Bi-Te nanowires and the Bi-Sb-Te nanowires of the module.
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