• Proceedings of the Materials Research Society of Korea Conference
• /
• 1996.05a
• /
• pp.113-113
• /
• 1996

• Proceedings of the Materials Research Society of Korea Conference
• /
• 1992.05a
• /
• pp.53-53
• /
• 1992

• Proceedings of the Materials Research Society of Korea Conference
• /
• 1992.05a
• /
• pp.74-74
• /
• 1992

• Proceedings of the Korean Vacuum Society Conference
• /
• 1993.02a
• /
• pp.70-71
• /
• 1993

• Proceedings of the Korean Powder Metallurgy Institute Conference
• /
• 2006.09a
• /
• pp.480-481
• /
• 2006

The n-type $(95%Bi_2Te_3-5%Bi_2Se_3)$ compound was newly fabricated by gas atomization and hot extrusion, which is considered to be a mass production technique of this alloy. The effect of powder size on thermoelectric properties of 0.04% $SbI_3$ doped $95%Bi_2Te_3-5%Bi_2Se_3$ alloy were investigated. Seebeck coefficient $({\alpha})$ and Electrical resistivity $(\rho)$ increased with increasing powder size due to the decrease in carrier concentration by oxygen content. With increasing powder size, the compressive strength of $95%Bi_2Te_3-5%Bi_2Se_3$ alloy was increased due to the relative high density. The compound with ${\sim}300\;{\mu}m$ size shows the highest power factor among the four different powder sizes. The rapidly solidified and hot extruded compound using $200[\sim}300{\mu}m$ powder size shows the highest compressive strength.

• Transactions of the Society of Information Storage Systems
• /
• v.1 no.1
• /
• pp.93-98
• /
• 2005

Rewritable optical disk is one of the essential data storage media in these days, which takes advantage of the different optical properties in the amorphous and crystalline states of phase change materials. As well known, data transfer rate is one of the most important parameter of the phase change optical disks, which is mostly limited by the crystallization speed of recording media. Therefore, we doped Sn/Bi to $Ge_2Sb_2Te_5$ alloy in order to improve the crystallization speed and investigated the dependence of phase change characteristics on Sn/Bi doping concentration. The Sn/Bi doped $Ge_2Sb_2Te_5$ thin film was deposited by RF magnetron co-sputtering system and phase change characteristics were investigated by X-ray diffraction (XRD), static tester, UV-visible spectrophotometer, electron probe microanalysis (EPMA), inductively coupled plasma mass spectrometer (ICP-MS) and atomic force microscopy (AFM). Optimum doping concentration of Bi and Sn were 5${\~}$6 at.$\%$ and the minimum time for crystallization was below than 20 ns. This improvement is correlated with the simple crystalline structure of Sn/Bi doped $Ge_2Sb_2Te_5$ and the reduced activation barrier arising from Sn/Bi doping. The results indicate that Sn/Bi might play an important role in the transformation kinetics of phase change materials..

• Journal of Digital Convergence
• /
• v.13 no.9
• /
• pp.489-495
• /
• 2015

Image availability evaluated by the degree of agreement and sensitive using the process improve visualization according to the Algorithm modification in Image Post-Processing. Reliability measured by the Breast Imaging Reporting and Data System. 172 patients visit same period divided by BI-RADS, category five stages, and contents of breast parenchyma into Calcification, Nodule and Mass. Evaluated the TE/PV image reliability, visualization sensitive, agreement of diagnosis. Convergence analysis was an in various fields. According to the result of this research, PV has higher sensitive and accuracy about lesions than TE visual and there is a difference insensitive by contents of breast parenchyma. Therefore, practical use of Algorithm Modification(Tissue Equalization: TE, Premium View: PV) is expected to improve more accurate, useful diagnosis, which has not been easy until now.

• Journal of the Microelectronics and Packaging Society
• /
• v.20 no.1
• /
• pp.15-19
• /
• 2013

The n-type $Bi_2(Te_{0.9}Se_{0.1})_3$ powders, which were fabricated by melting/grinding method and dispersed with 0.5 vol% $TiO_2$ nanopowders, were hot-pressed in order to investigate the effects of $TiO_2$ dispersion on the thermoelectric properties of the hot-pressed $Bi_2(Te_{0.9}Se_{0.1})_3$. Excellent thermoelectric properties such as a maximum figure-of-merit of $2.93{\times}10^{-3}/K$ and a maximum dimensionless figure-of-merit of 1.02 were obtained for the hot-pressed $Bi_2(Te_{0.9}Se_{0.1})_3$. With dispersion of 0.5 vol% $TiO_2$ nanopowders, the maximum figure-of-merit and the maximum dimensionless figure-of-merit decreased to $2.09{\times}10^{-3}/K$ and 0.68, respectively.

• Journal of Information Processing Systems
• /
• v.17 no.4
• /
• pp.818-833
• /
• 2021

To address the problems of low precision rate, insufficient feature extraction, and poor contextual ability in existing text sentiment analysis methods, a mixed model account of a CNN-BiLSTM-TE (convolutional neural network, bidirectional long short-term memory, and topic extraction) model was proposed. First, Chinese text data was converted into vectors through the method of transfer learning by Word2Vec. Second, local features were extracted by the CNN model. Then, contextual information was extracted by the BiLSTM neural network and the emotional tendency was obtained using softmax. Finally, topics were extracted by the term frequency-inverse document frequency and K-means. Compared with the CNN, BiLSTM, and gate recurrent unit (GRU) models, the CNN-BiLSTM-TE model's F1-score was higher than other models by 0.0147, 0.006, and 0.0052, respectively. Then compared with CNN-LSTM, LSTM-CNN, and BiLSTM-CNN models, the F1-score was higher by 0.0071, 0.0038, and 0.0049, respectively. Experimental results showed that the CNN-BiLSTM-TE model can effectively improve various indicators in application. Lastly, performed scalability verification through a takeaway dataset, which has great value in practical applications.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.21 no.12
• /
• pp.1135-1140
• /
• 2008

Bismuth-telluride based thin film materials are grown by Metal Organic Chemical Vapor Deposition(MOCVD). A planar type thermoelectric device has been fabricated using p-type $Bi_{0.4}Sb_{1.6}Te_3$ and n-type $Bi_2Te_3$ thin films. Firstly, the p-type thermoelectric element was patterned after growth of $4{\mu}m$ thickness of $Bi_{0.4}Sb_{1.6}Te_3$ layer. Again n-type $Bi_2Te_3$ film was grown onto the patterned p-type thermoelectric film and n-type strips are formed by using selective chemical etchant for $Bi_2Te_3$. The top electrical connector was formed by thermally deposited metal film. The generator consists of 20 pairs of p- and n-type legs. We demonstrate complex structures of different conduction types of thermoelectric element on same substrate by two separate runs of MOCVD with etch-stop layer and selective etchant for n-type thermoelectric material. Device performance was evaluated on a number of thermoelectric devices. To demonstrate power generation, one side of the sample was heated by heating block and the voltage output measured. As expected for a thermoelectric generator, the voltage decreases linearly, while the power output rises to a maximum. The highest estimated power of $1.3{\mu}W$ is obtained for the temperature difference of 45 K. we provide a promising procedure for fabricating thin film thermoelectric generators by using MOCVD grown thermoelectric materials which may have nanostructure with high thermoelectric properties.