• Bulletin of the Korean Chemical Society
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• v.18 no.12
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• pp.1260-1264
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• 1997

The phase-transfer reagent (PTC), ethyl tri-n-octylammonium bromide (ETABr), strongly catalyzes the reaction of p-nitrophenyldiphenylphosphinate (p-NPDPIN) with benzimidazole (BI) and its anion (BI-). In ETABr solutions, the dephosphorylation reactions exhibit higer than first order kinetics with respect to the nucleophile, BI, and ETABr, suggesting that reactions are occuring in small aggregates of the three species including the substrate, whereas the reaction of p-NPDPIN with OH- is not catalyzed by ETABr. This behavior for the drastic rate-enhancement of the dephosphorylation is refered as 'aggregation complex model' for reactions of hydrophobic organic phosphinates with benzimidazole in hydrophobic quarternary ammonium salt solutions.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.489-494
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• 2001

In this thesis, the microstructure and electrical properties of ZnO varistors were investigated according to ZnO varistors with various formulation. A∼E's ZnO varistor ceramics were exhibited good density, 95% of theory density and low porosity, 5%, wholly. The average grain size of A-E's ZnO varistor ceramics exhibited 11.89$\mu\textrm{m}$, 13.57$\mu\textrm{m}$, 15.44$\mu\textrm{m}$, 11.92$\mu\textrm{m}$, 12.47$\mu\textrm{m}$, respectively. Grain size of C's ZnO varistor is larger and grain size of A and D's are smaller than other varistors. In the microstructure, A∼E's ZnO varistor ceramics sintered at l130$^{\circ}C$ was consisted of ZnO grain(ZnO), spinel phase(Zn$\sub$2.33/Sb$\sub$0.67/O$_4$), Bi-rich Phase(Bi$_2$O$_3$) and inergranular phase, wholly. Reference voltage of A∼E's ZnO varistor sintered at 1130$^{\circ}C$ decreased in order D, E > A > B > C's ZnO varistors. Nonlinear exponent of varistors exhibited high characteristics, above 30, wholly. Consequently, C's ZnO varistor exhibited good nonlinear exponent, 68. Lightning impulse residual voltage of A, B, C and E's ZnO varistors suited standard characteristics, below 12kV at current of 5kA.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.19 no.2
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• pp.66-69
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• 2009

The compositional dependence of bismuth iron oxides and effect of La-substitutions in the structure of $BiFeO_3$ compounds were investigated, which compounds were synthesized by conventional ceramic processing. It is shown that some of bismuth iron oxides including $BiFeO_3$ show the narrow single phase region. The effect of La-doping in $BiFeO_3$ was presented as disappearance of many impurity phases of Bi-Fe-O compounds. The lower electrical resistivity was obtained as those compositions of Fe deficient region and La-doped $BiFeO_3$. The saturation magnetization of La-doped $BiFeO_3$ was increased with La content. The dielectric dispersion was also observed for those Bi-Fe-O compounds with Fe deficient and La-doped $BiFeO_3$ at low frequencies under 1 kHz.

• The Korean Journal of Ceramics
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• v.4 no.2
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• pp.83-89
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• 1998

The structure refinements and the electrical and magnetoelectric measurements were performed for BIT.1BF and BIT.2BT. The tetragonal distortion of the ab plane became lessened with the addition of $4BiFeO_3 into Bi_4Ti_3O_{12}$ significantly. However, the tilting of the outer-oxygen octahedra of the perovskite unit and the elongatin of the $(Bi_2O_2)^{2+}$ layers became more pronounced. For the both phases, the bariations of dielectric properties and electrical conductivities at high temperatures showed that the ferroelectic I-rerroelectric II phase transition existed before reaching the Curie temperature. The electrical conductivity became higher with the increase of $Fe^{3+}$ ions, implying that the electron transfer increased correspondingly. The magnetoelectric effect was observed linear up to ~8 kOe, which was stronger in BIT.1BF than BIT.2BF. This behavior indicates that the distortion of the ab plane may affect the induced polarization as well as magnetic moment.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.9
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• pp.764-769
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• 2002

The effect of excess Bi contents on the ferroelectric properties of B $i_{3.25}$ L $a_{0.75}$ $Ti_3$ $O_{12}$ (BLT) thin films has been investigated. Bismuth lanthanum titanate thin films with excess Bi contents were prepared onto Pt/Ti/ $SiO_2$/Si substrate by metalorganic decomposition (MOD) technique. The structure and morphology of the films were analyzed using X-ray diffraction (XRD) and atomic force microscopy (AFM), respectively. From the XRD analysis, BLT thin films show polycrystalline structure and the layered-perovskite phase was obtained over 10% excess of Bi contents. As a result of ferroelectric characteristics related to the Bi content of the BLT thin film, the remanent polarization and dielectric constant decreased with increasing over Bi content of 10% excess. The BLT film with Bi content of 10% excess was measured to have a dielectric constant of 326 and dielectric loss of 0.024. The BLT thin films showed little polarization fatigue test up to 3.5$\times$10$^{9}$ bipolar switching cycling.

• 유체기계공업학회:학술대회논문집
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• 2004.12a
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• pp.172-179
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• 2004

Average Bi-directional flow tube was suggested to measure single and two phase flow rate. Its working principle is similar with Pilot tube, however, it makes it possible to eliminate the cooling system which is normally needed to prevent from flashing in the pressure impulse line of Pilot tube when it is used in the depressurization condition. The suggested instrumentation was tested in the air-water vertical test section which has 80mm inner diameter and 10m length. The flow tube was installed at 120 of L/D from inlet of test section. From the test, single air and water flow rate was measured successfully. For the emasurement of two phase flow rate, Chexal drift-flux correlation was used. In the test a new correlation of momentum exchange factor was suggested. The test result shows that the suggested instrumentation using the measured void fraction and Chexal drift-flux correlation can predict the mass flow rates within $10\%$ error of measured data.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1990.10a
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• pp.31-35
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• 1990

In the ($Bi_{1-x}Pb_{x}$)$_2$$Sr_2$$Ca_2$$Cu_{3.6}$$O_{y}$ (x=0∼0.5) superconductors, DTA and XRD-pattern analyses were performed to obviousely define optimal calcining and sintering temperature. And, understanding behaviors of High-Tc phase with preparation condition of superconductors, that is, calcining and sintering temperature, sintering time, and variation of Pb contents, in order to make single phase of superconductor, microstructure and its composition were analyzed with SEM, XRD, and EDAX. continuously, the cause of phase transition was define with synthetically studying mutural relation between measured electrical resistivity and current density. Also, in order to design enhancement of critical current density, Jc required for realization, samples varied with pressing condition were made, and measured its, Jc.

• Korean Journal of Materials Research
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• v.7 no.2
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• pp.140-144
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• 1997

The effects of the particle size of precursor powder on the microstructure and Jc of Ag-sheathed Ri-2223 tapes were investigated. The calcined powder with overall composition of $Bi_{1-89}Pb_{0-41}Sr_{2-01}Ca_{2-23}Cu_{3-03}O_{y}$ was milled for various times using planetary ball mill. The transport property of the tapes were found to depend strongly on the particle size of the precursor powder Enhanced reactivity of the milled powder facilitated the formation of 2223 phase and resulted in an increase of Jc. Excessive milling, however, led to the amorphisation of the powder and degraded the electrical property of the tapes.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.272.1-272.1
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• 2016

In a three-dimensional topological insulator Bi2Se3, a stress control for band gap manipulation was predicted but no systematic investigation has been performed yet due to the requirement of large external stress. We report herein on the strain-dependent results for Bi2Se3 films of various thicknesses that are grown via a self-organized ordering process. Using small angle X-ray scattering and Raman spectroscopy, the changes of d-spacings in the crystal structure and phonon vibration shifts resulted from stress are clearly observed when the film thickness is below ten quintuple layers. From the UV photoemission/inverse photoemission spectroscopy (UPS/IPES) results and ab initio calculations, significant changes of the Fermi level and band gap were observed. The deformed band structure also exhibits a Van Hove singularity at specific energies in the UV absorption experiment and ab initio calculations. Our results, including the synthesis of a strained ultrathin topological insulator, suggest a new direction for electronic and spintronic applications for the future.

• Korean Journal of Materials Research
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• v.19 no.2
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• pp.111-114
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• 2009

For the fabrication of core-shell structure bimetallic lead-free solder balls, both the critical temperature ($T_{cr}$) for the phase separation of two immiscible liquid phases and the temperature coefficient of the interfacial tension between the two separated liquid phases are required. In order to obtain this information, the temperature dependence of the surface tension of 60%Bi-24%Cu-16%Sn(-REM) alloys was measured using the constrained drop method. The slope of the temperature dependence of the surface tension changed clearly at a critical temperature for the separation of two immiscible liquid phases. The critical temperature of the 60%Bi-24%Cu-16%Sn alloy was estimated to be 1097K. An addition of 0.05% Ce decreased the critical temperature to 1085K, whereas that of 0.05% La increased it to 1117K. It was found that the surface tension and its temperature coefficient of the 60%Bi-24%Cu-16%Sn alloy were slightly increased by the addition of 0.05% Ce and 0.05% La. In addition, additions of Ce and La increased the temperature coefficient of the interfacial tension.