• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1990.10a
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• pp.26-30
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• 1990

Bi$\_$0.7/Pb$\_$0.3/Sr$_1$Ca$_1$Cu$\_$1.8/Ox thick films were screen printed on magnesia(MgO), silver and yttrium stabilized zirconia (YSZ) substrates and were sintered in a boat with cover to prevent the evaporation. The high-Tc phase increase and the low-Tc phase and Ca$_2$PbO$_4$ decrease with an increase in sintering temperature from 835$^{\circ}C$ to 860$^{\circ}C$. YSZ substrate interact strongly with the oxide resulting in poor superconductor, while the Ag and MgO substrates were satisfactory to make screen printed superconductors. The Bi$\_$0.7/Pb$\_$0.3/Sr$_1$Ca$_1$Cu$\_$1.8/Ox thick films screen printed both on Ag and MgO substrates show high Tc phase of ~85% and Tc of 96K.

• Journal of the Korean Ceramic Society
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• v.35 no.10
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• pp.1040-1048
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• 1998

Ferroelectric properties of{{{{ { { { {SrBi }_{2 }Ta }_{2-x }Nb }_{x }O }_{9 } }} (SBIN) thin films were affected by the amount of Bi content in SBTN. The addition of Bi into the SBTN films could be accomplished by heat treating SBTN/Bi2O3/SBTN het-erostructures fabricated by r.f. magnetron sputtering method. The variation of Bi content was controlled by changing the thickness of the sandwiched Bi2O3 in SBTN/Bi2O3/SBTN heterostructure from 50 to 400$\AA$. As changing the thickness of the sandwiched Bi2O3 in Bi2O3 films was increased from 0 to 100$\AA$ the grain grew faster and the ferroelectric pro-perties were improved. On the other hand when the thickness of Bi2O3 films was thicker than 150$\AA$ the fer-roelectric properties were deteriorated Especially for SBTN thin films inserted by 400$\AA$ Bi2O3 layer a Bi2Phase appeared as a second phase resulting in poor ferroelectric properties. The maximum remanent po-larization (2Pr) and coercive field(Ec) were obtained for the SBTN/Bi2O3/(100$\AA$)/SBTN thin films. In this case 2Pr and Ec were 14.75 $\mu$C/cm2 and 53.4kV/cm at an applied voltage of 3V respectively.

• Proceedings of the Materials Research Society of Korea Conference
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• 2007.11a
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• pp.21.2-21.2
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• 2007

• Korean Journal of Materials Research
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• v.19 no.11
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• pp.601-606
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• 2009

$BiFeO_3$ (BFO) thin films were prepared on $Pt/TiO_2/Si$ substrate by r.f. magnetron sputtering. The effects of deposition pressure on electrical properties were investigated using measurement of dielectric properties, leakage current and polarization. When BFO targets were prepared, Fe atoms were substituted with Mn 0.05% to increase electrical resistivity of films. (Fe+Mn)/Bi ratio of BFO thin films increases with increasing partial pressure of $O_2$ gas. The deposited films showed the only BFO phase at 10 mTorr, the coexistence of BFO and $Bi_2O_3$ phase at 30-50 mTorr, and the only $Bi_2O_3$ phase at 70 mTorr. The crystallinity of BFO films was reduced due to the higher Bi contents and the decrease of surface mobility of atoms at high temperature. The porosity and surface roughness of films increased with the increase of the deposition pressure. The films deposited at high pressure showed low dielectric constant and high leakage current. The dielectric constant of films deposited at various deposition pressures was 84${\sim}$153 at 1 kHz. The leakage current density of the films deposited at 10${\sim}$70 mTorr was about $7{\times}10.6{\sim}1.5{\times}10.2A/cm^2$ at 100 kV/cm. The leakage current was found to be closely related to the morphology and composition of the BFO films. BFO films showed poor P-E hysteresis loops due to high leakage current.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.486-487
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• 2007

$Bi_2Sr_2Ca_{n-1}Cu_nO_x$(n=0, 1, 2) thin films have been fabricated by co-deposition at an ultra-low growth rate using ion beam sputtering(IBS) method. The growth rates of the films was set in the region from 0.17 to 0.27 nm/min. MgO(100) was used as a substrate. In order to appreciate stable existing region of Bi 2212 phase with temperature and ozone pressure, the substrate temperature was between 655 and $820^{\circ}C$ and the highly condensed ozone gas pressure in vacuum chamber was varied between $2{\times}10^{-6}{\sim}4{\times}10^{-5}$ Torr. Bi 2212 phase appeared in the temperature range of 750 and $795^{\circ}C$ and single phase of Bi 2201 existed in the lower region than $785^{\circ}C$. Whereas, $PO_3$ dependance on structural formation was scarcely observed regardless of the pressure variation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.1218-1221
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• 2004

Bi2212 superconducting thin films fabricated by using the ion Beam Sputtering Method. As a result, although the composition of Bi2212 was set up, the phase of Bi2201, Bi2212 and Bi2223 was formed. The formation area of these stable phases is indicated as inclined line in the direction of the right lower end from the Arrhenius plot of the substrate temperature-oxidation gas pressure, and are distributed in very small area. The activation energy for the phase transformation from the Bi2201 to the Bi2212 is estimated in terms of the Avrami equation.

• Journal of the Korean Ceramic Society
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• v.28 no.5
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• pp.353-358
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• 1991

Fine powders of the 2212 superconducting phase of bismuth system have been prepared directly from solution using ultrasonic spray pyrolysis. The fine superconducting powders produced by pyrolysis were characterized for the size, shape, and crystalline phase by SEM and XRD. The pyrolysis temperature, flow rate of the carrier gas, residence time of the droplets greatly influenced the size, shape, and crystalline phase. The optimum temperature and flow rate of the carrier gas for the preparation of fine powders of the 2212 superconduting phase were found to be 830$^{\circ}C$and 3ι/min, respectively.

• Transactions on Electrical and Electronic Materials
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• v.2 no.4
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• pp.11-14
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• 2001

Phase intergrowth in BSCCO thin films has been Investigated. It turfed out from XRD analyses of these phases that molar fraction of each constituent phase in the intergrowth thin film can be exhibited as a function of substrate temperature and ozone pressure. Super- conducting behavior of the intergrowth thin aim Is also discussed.

• Applied Chemistry for Engineering
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• v.3 no.1
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• pp.53-63
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• 1992

M/BM -series catalysts, $MoO_3$ supported on ${\alpha}-Bi_2Mo_3O_{12}$ were also prepared by impregnation method. BM/M-series catalysts, ${\alpha}-Bi_2Mo_3O_{12}$ supported on $MoO_3$ were also prepared by coprecipitation. Structure and catalytic properties of the two phase catalysts were studied by means of using nitrogen adsorption, X-ray diffraction, and scanning electron microscopy. The reaction test for the selective oxidation of propylene to acrolein over Bi-molybdate catalysts was studied using a fixed-bed reactor system. In M/BM-series catalysts, $MoO_3$ was dispersed on ${\alpha}-Bi_2Mo_3O_{12}$, and the crystal structure of ${\alpha}-Bi_2Mo_3O_{12}$ remains unchanged by the presence of excess $MoO_3$. However the surface morphology and bulk structure of BM/M-series catalysts were altered probably because the precipitated $Bi(OH)_3$ reacted with $MoO_3$ during the calcination to form ${\alpha}-Bi_2Mo_3O_{12}$ phase. The results of propylene oxidation on both series catalysts showed that the reaction took place over the surface of ${\alpha}-Bi_2Mo_3O_{12}$ particle and the role of excess $MoO_3$ was to supply oxygen to ${\alpha}-Bi_2Mo_3O_{12}$. These increasing effects on activity were also observed in the mechanical mixtures of ${\alpha}-Bi_2Mo_3O_{12}$ and $MoO_3$.

• Journal of Korea Foundry Society
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• v.21 no.4
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• pp.239-245
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• 2001

Microstructure and mechanical properties of Sn-3.1 wt.%Ag-6.9 wt.%Bi system solders on Cu-substrate were studied. The Sn3.1 wt.%Ag-6.9 wt.%Bi alloy was designed by phase diagram and chemical properties and was prepared by melting in argon atmosphere. The mechanical properties of solder/Cu joints were examined by shear strength test, and also creep test. The microstructure of Sn-3.1 wt.%Ag-6.9 wt.%Bi alloy consists of Bi-rich phase and $Ag_3Sn$ precipitate in {\beta}-Sn$ matrix phase. The shear strength of the joint was decreased with aging treatment. Crack path under shear test was through the solder. Similar crack path change mode was observed at the creep test of solder/Cu joint. The creep behavior of Sn-3.1 wt.%Ag-6.9 wt.%Bi alloy represented the inverse primary creep behavior at all test condition. It is suggested that the inverse primary creep behavior is induced from Bi solute atoms in Sn-matrix. The creep resistance of Sn-3.1Ag-6.9Bi alloy is better than that of Sn-3.5 wt.%Ag alloy at all test conditions.