• Title/Summary/Keyword: Bi-layer electrode

Search Result 38, Processing Time 0.021 seconds

Effect of Glass Frit in $TiO_2$ Electrode for DSSCs (Glass Frit을 이용한 염료감응 태양전지의 광 특성 연구)

  • Kim, Jongwoo;Jeon, Jaeseung;Kim, Dongsun;Hwang, Seongjin;Kim, Hyungsun
    • 한국신재생에너지학회:학술대회논문집
    • /
    • 2010.06a
    • /
    • pp.75.1-75.1
    • /
    • 2010
  • Dye sensitized solar cells(DSSCs) have been extensively studied due to their various advantages such as low production cost, colorful design, and eco-friendly process. Long optical path length is one of the most effective method to improve light harvest efficiency for DSSCs. Multi-layered $TiO_2$ nano-structured film with scattering layer has been studied to generate scattering effect by many researchers. It was expected that the difference of refractive index between $TiO_2$ particles and glass frit would generate the light scattering effect and provide the long optical path length. Therefore, to enhance the scattering effect, the frits of $Bi_2O_3-B_2O_3$-ZnO glass system that has the different refractive index were added to $TiO_2$ pastes in this study. First of all, the absorbance and haze factor of $TiO_2$ electrode with dyes and the refractive index of glass frit and $TiO_2$ were measured, respectively. To study the effect of frits, the efficiencies of DSSCs added glass frit and without glass frit were compared. Our results showed slightly higher efficiency with the different absorbance and haze factor of $TiO_2$ and glass frit. It was considered that the light scattering effect would be improved with adding frits to $TiO_2$ paste. Our preliminary studies will be useful for increasing efficiency of DSSCs.

  • PDF

Fabrication of Thin Solid Oxide Film Fuel Cells

  • Jee, Young-Seok;Chang, Ik-Whang;Son, Ji-Won;Lee, Jong-Ho;Kang, Sang-Kyun;Cha, Suk-Won
    • Journal of the Korean Ceramic Society
    • /
    • v.47 no.1
    • /
    • pp.82-85
    • /
    • 2010
  • Recently, thin film processes for oxides and metal deposition, such as physical vapor deposition (PVD) and chemical vapor deposition (CVD), have been widely adapted to fabricate solid oxide fuel cells (SOFCs). In this paper, we presented two research area of the use of such techniques. Gadolinium doped ceria (GDC) showed high ionic conductivity and could guarantee operation at low temperature. But the electron conductivity at low oxygen partial pressure and the weak mechanical property have been significant problems. To solve these issues, we coated GDC electrolyte with a nano scale yittria-doped stabilized zirconium (YSZ) layer via atomic layer deposition (ALD). We expected that the thin YSZ layer could have functions of electron blocking and preventing ceria from the reduction atmosphere. Yittria-doped barium zirconium (BYZ) has several orders higher proton conductivity than oxide ion conductor as YSZ and also has relatively high chemical stability. The fabrication processes of BYZ is very sophisticated, especially the synthesis of thin-film BYZ. We discussed the detailed fabrication processes of BYZ as well as the deposition of electrode. This paper discusses possible cell structure and process flow to accommodate such films.

Glass Antenna Using Transparent IZTO/Ag/IZTO Multilayer Electrode (IZTO/Ag/IZTO 다층 투명전극을 이용한 안경용 웨어러블 안테나)

  • Hong, Seungman;Kim, Youngsung;Jung, Chang Won
    • Journal of the Korea Academia-Industrial cooperation Society
    • /
    • v.17 no.2
    • /
    • pp.372-377
    • /
    • 2016
  • Communication flow is changing rapidly. Recently, a range of wearable devices such as wearable glasses and wearable watch, have been launched. These kinds of wearable devices help people to live a more comfortable life. Wearable devices most have an antenna for wireless communication. This paper reports a transparent antenna that is made of an optically transparent material for wearable glasses. Transparent antenna can be applied to smart windows and will not disturb the view of user. IZTO/Ag/IZTO multilayer electrode has higher electrical and optical properties. This antenna is available because of its good electrical properties. This study measured the performance of the proposed transparent antenna, which is made of a multilayer electrode, applied to a lens. The proposed antenna was simulated with several substrates. The antenna impedance was matched with length and width of the antenna. The antenna's conductivity and transparency was measured using a HMS-3000 and UV-spectrometer. A 40nm thick Ag single layer antenna was fabricated on a flexible polyimide substrate for comparing the antenna performances. The fabricated antenna is useable at a frequency of 2.4-2.5GHz, which is suitable for Wifi communications and has peak gain of 2.89dBi and an efficiency of 34%.

The Influence of Al Underlayer on the Optical and Electrical Properties of GZO/Al Thin Films

  • Kim, Sun-Kyung;Kim, So-Young;Kim, Seung-Hong;Jeon, Jae-Hyun;Gong, Tae-Kyung;Kim, Daeil;Choi, Dong-Hyuk;Son, Dong-Il
    • Transactions on Electrical and Electronic Materials
    • /
    • v.14 no.6
    • /
    • pp.321-323
    • /
    • 2013
  • 100 nm thick Ga doped ZnO (GZO) thin films were deposited with DC and RF magnetron sputtering at room temperature on glass substrate and Al coated glass substrate, respectively. and the effect of the Al underlayer on the optical and electrical properties of the GZO films was investigated. As-deposited GZO single layer films had an optical transmittance of 80% in the visible wavelength region, and sheet resistance of 1,516 ${\Omega}/{\Box}$, while the optical and electrical properties of GZO/Al bi-layered films were influenced by the thickness of the Al buffer layer. GZO films with 2 nm thick Al film show a lower sheet resistance of 990 ${\Omega}/{\Box}$, and an optical transmittance of 78%. Based on the figure of merit (FOM), it can be concluded that the thin Al buffer layer effectively increases the performance of GZO films as a transparent and conducting electrode without intentional substrate heating or a post deposition annealing process.

Annealing Time Properties of SBT Capacitors by RF Sputtering method (RF 스퍼터링법에 의한 SBT 커패시터의 열처리 시간 특성)

  • Cho, Choon-Nam;Oh, Yong-Cheul;Kim, Jin-Sa;Shin, Cheol-Gi;Lee, Dong-Gu;Choi, Woon-Shick;Lee, Sung-Ill;Lee, Joon-Ung
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2004.07b
    • /
    • pp.817-820
    • /
    • 2004
  • The $Sr_{0.7}Bi_{2.6}Ta_2O_9$(SBT) thin films are deposited on Pt-coated electrode($Pt/TiO_2/SiO_2/Si$) using a RF magnetron sputtering method. The ferroelectric properties of SBT capacitors with annealing time were studied. In the SEM images, Bi-layered perovskite phase was crystallized at 10min and grains largely grew with annealing tune. SBT thin films are transformed from initial amorphous phase to the fully formed layer-structured perovskite. During the annealing process at $750^{\circ}C$, we found that an fluorite-like stage is formed after 3min. In the XRD pattern, the SBT thin films after 3min annealing time had (105) orientation. The ferroelectric properties of SBT capacitor with annealing time represent a favorable properties at 60 min. The maximum remanent polarization and the coercive electric field with 60 min are $12.40C/cm^2$ and 30kV/cm, respectively. The leakage current density with 60min is $6.81{\times}10^{-10}A/cm^2$.

  • PDF

Understanding the Effect on Hydrogen Evolution Reaction in Alkaline Medium of Thickness of Physical Vapor Deposited Al-Ni Electrodes (Physical Vapor Deposition 방법으로 제조된 Al-Ni 전극의 두께가 알칼라인 수전해 수소발생반응에 미치는 영향 연구)

  • HAN, WON-BI;CHO, HYUN-SEOK;CHO, WON-CHUL;KIM, CHANG-HEE
    • Transactions of the Korean hydrogen and new energy society
    • /
    • v.28 no.6
    • /
    • pp.610-617
    • /
    • 2017
  • This paper presents a study of the effect of thickness of porous Al-Ni electrodes, on the Hydrogen Evolution Reaction (HER) in alkaline media. As varying deposition time at 300 W DC sputtering power, the thickness of the Al-Ni electrodes was controlled from 1 to $20{\mu}m$. The heat treatment was carried out in $610^{\circ}C$, followed by selective leaching of the Al-rich phase. XRD studies confirmed the presence of $Al_3Ni_2$ intermetallic compounds after the heat treatment, indicating the diffusion of Ni from the Ni-rich phase to Al-rich phase. The porous structure of the Al-Ni electrodes after the selective leaching of Al was also confirmed in SEM-EDS analysis. The double layer capacitance ($C_{dl}$) and roughness factor ($R_f$) of the electrodes were increased for the thicker Al-Ni electrodes. As opposed to the general results in above, there were no further improvements of the HER activity in the case of the electrode thickness above $10{\mu}m$. This result may indicate that the $R_f$ is not the primary factor for the HER activity in alkaline media.

High Luminous Efficiency Flat Light Source with Xe mixture Gas Discharge and Areal Brightness Control Method (제논 혼합가스를 이용한 고효율 면광원과 국부적 밝기 제어 방식)

  • Jung, Jae-Chul;Seo, In-Woo;Oh, Byung-Joo;Whang, Ki-Woong
    • Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
    • /
    • 2009.10a
    • /
    • pp.153-157
    • /
    • 2009
  • A Highly efficient Mercury-free Flat Fluorescent Lamp (MFFL) with dielectric barrier Xe gas discharge was developed for an alternative of conventional line-type Cold Cathode Fluorescent Lamps (CCFLs) which shows a wide voltage margin and a stable discharge operation for diffuse glow discharge with an application of a auxiliary electrode. Electro-optic characteristics of the MFFL were examined through the changes in ambient temperature, total pressure and Xe partial pressure. the single cell is expanded into a multi-structured configuration to realize a large sized lamp by a simple repetition of the single cells, and a new driving scheme is proposed for an adaptive brightness control using dual auxiliary electrodes and bi-polar drive scheme. In addition, interesting application of this ultra high luminance flat lamp by the optimization of the gas condition and the pattern of the rear phosphor layer is suggested as a good alternative of daylight lamp source

  • PDF

Interface Structures of Ag-Si Contacts with Thermal Properties of Frits in Ag Pastes

  • Choi, Seung-Gon;Kim, Dong-Sun;Lee, Jung-Ki;Kim, Hyung-Sun
    • Korean Journal of Materials Research
    • /
    • v.22 no.8
    • /
    • pp.390-396
    • /
    • 2012
  • Ag pastes added to Bi-oxide frits have been applied to the electrode material of Si solar cells. It has been reported that frits induce contacts between the Ag electrodes and the Si wafer after firing. During firing, the control of interfaces among Ag, the glass layer, and Si is one of the key factors for improving cell performance. Specifically, the thermo-physical properties of frits considerably influence Ag-Si contact. Therefore, the thermal properties of frits should be carefully controlled to enhance the efficiency of cells. In this study, the interface structures among Ag electrodes, glass layers, and recrystallites on an $n^+$ emitter were carefully analyzed with the thermal properties of lead-free frits. First, a cross-section of the area between the Ag electrodes and the Si wafer was studied in order to understand the interface structures in light of the thermal properties of the frits. The depth and area of the pits formed in the Si wafer were quantitatively calculated with the thermal properties of frits. The area of the glass layers between the Ag electrodes and Si, and the distribution of recrystallites on the $n^+$ emitter, were measured from a macroscopic point of view with the characteristics of the frits. Our studies suggest that the thermophysical properties should be controlled for the optimal performance of Si solar cells; our studies also show why cell performance deteriorated due to the high viscosity of frits in Ag pastes.