• Title/Summary/Keyword: Bi-layer electrode

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Effect of Ag Underlayer Thickness on the Electrical and Optical Properties of IGZO/Ag Layered Films (Ag 완충박막 두께에 따른 IGZO/Ag 적층박막의 특성 변화)

  • Kim, So-Young;Kim, Sun-Kyung;Kim, Seung-Hong;Jeon, Jae-Hyun;Gong, Tae-Kyung;Choi, Dong-Hyuk;Son, Dong-Il;Kim, Daeil
    • Journal of the Korean Society for Heat Treatment
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    • v.27 no.5
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    • pp.230-234
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    • 2014
  • IGZO/Ag bi-layered films were deposited on glass substrate at room temperature with radio frequency and direct current magnetron sputtering, respectively to consider the effect of Ag buffer layer on the electrical, optical and structural properties. For all deposition, while the thickness of Ag buffer layer was varied as 10, 15, and 20 nm, The thickness of IGZO films were kept at 100 nm, In a comparison of figure of merit, IGZO films with 15 nm thick Ag buffer layer show the higher figure of merit ($1.1{\times}10^{-2}{\Omega}^{-1}$) than that of the IGZO single layer films ($3.7{\times}10^{-4}{\Omega}^{-1}$). From the observed results, it is supposed that the IGZO 100 nm/Ag 15 nm bi-layered films may be an alternative candidate for transparent electrode in a transparent thin film transistor device.

The Movement Characteristic of Micro Droplet by BZN in EWOD structure (EWOD 구조에서 상유전체 BZN에 의한 micro droplet의 이동 특성)

  • Kim, Nah-Young;Hong, Sung-Min;Park, Soon-Sup
    • Proceedings of the KIEE Conference
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    • 2005.11a
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    • pp.36-38
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    • 2005
  • This study is about how to lower the driving voltage that enables to move the micro droplet by the EWOD (Electro Wetting On Dielectric) mechanism. EWOD is well known that it is used ${\mu}-TAS$ digital micro fluidics system. As the device which is fabricated with dielectric layer between electrode and micro droplet is applied voltage, the hydrophobic surface is changed into the hydrophilic surface by electrical property. Therefore, EWOD induces the movement of micro droplet with reducing contact angle of micro droplet. The driving voltage was depended on the dielectric constant of dielectric layer, thus it can be reduced by increase of dielectric constant. Typically, very high voltage ($100V{\sim}$) is used to move the micro droplet. In previous study, we used $Ta_{2}O_{5}$ as the dielectric layer and driving voltage was 23V that reduced 24 percent compared with $SiO_2$. In this study, we used $BZN(Bi_{2}O_{3}ZnO-Nb_{2}O_{5})$ layer which had high dielectric constant. It was operated the just 12V. And micro droplet was moved within Is on 15V. It was reduced the voltage until 35 percents compare with $Ta_{2}O_{5}$ and 50 percents compare with $SiO_2$. The movement of micro droplet within 1s was achieved with BZN (ferroelectrics)just on 15V.

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Interaction Between Transparent Dielectric of Bi2O3-B2O3-BaO-ZnO Glass and Ag Electrode (Bi2O3-B2O3-BaO-ZnO계 투명유전체와 Ag 전극의 반응)

  • An, Yong-Tae;Choi, Byung-Hyun;Kim, Hyung-Sun
    • Korean Journal of Materials Research
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    • v.18 no.12
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    • pp.678-682
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    • 2008
  • This study investigates $Bi_2O_3$-$B_2O_3$-BaO-ZnO glass with variations of the $Co_3O_4$ content (0.25, 0.5, 1, and 2 wt%) and the interaction between transparent dielectric and Ag electrodes heat-treated at $500-560^{\circ}C$ for 30 min. The glass transition temperature, softening temperature and thermal expansion coefficient were $432^{\circ}C$, $460^{\circ}C$ and $81.4{\times}10^{-7}/^{\circ}C$, respectively. The transmittance of 0.25 wt% $Co_3O_4$ to which dielectric was added was highest and was decreased due to coloration with the addition of more than 0.25 wt%. However, without $Co_3O_4$, the transmittance of the transparent layer was decreased due to the formation of $Ba_5Bi_3$; however, the occurrence of the crystal phase decreased as a result of the addition of $Co_3O_4$. The amount of $Co^{2+}$ ions increased as the $Co_3O_4$ increased. With a maximum of $Co^{3+}$ ions, the highest transmittance was observed.

Photoelectrochemical Characteristics at the Titanium Oxide Electrode with Light Intensity and pH of the Solution (산화 티타늄 전극의 광학농도와 pH에 따른 광전기화학적 특성)

  • Park, Seong-Yong;Cho, Byung-Won;Yun, Kyung-Suk
    • Applied Chemistry for Engineering
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    • v.5 no.2
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    • pp.255-262
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    • 1994
  • Arc melted Ti-5Bi alloy was oxidized by thermal oxidation method. In the present study free energy efficiency(${\eta}_e$) of titanium oxide electrode(TOE) was measured as a function of light intensity and light energy. Flat-band potential of TOE was measured as a function of the light intensity and the solution pH. The ${\eta}_e$ of TOE increased with the increase of light intensity and tight energy to maximum value of 3.2% and 13%, respectively, at $0.2W/cm^2$ and 4.0eV. The ${\eta}_e$ was strongly dependent on the magnitude of the bias voltage. Maximum value was found at 0.5V bias. Photocurrent of TOE was controlled by electron-hole pair generation in depletion layer. The flat-band potential of the illuminated TOE shifted to -0.065V/decade with increasing light intensity. With the decrease of pH of electrolyte, flat-band potential shifted to anodic direction. The experimental slope was in good agreement with the Nernstian value of 0.059V/pH decade.

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Experimental fabrication of tapped band pass filter of $BiNbO_{4}$ ceramics ($BiNbO_4$ 세라믹스를 이용한 태핑기법의 적층칩 대역 필터에 관한 연구)

  • 고상기;지기만;김경용
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.23 no.4
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    • pp.988-996
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    • 1998
  • BN ceramics with 0.07wt% $V_{2}O_{5}$ and 0.03wt% CuO(BNC3V7) sintered at $900^{\circ}C$ where it is possible for these to be co-fired with Ag electrode. Dielectricconstant of 44.3, TCF of 22 ppm$/^{\circ}C$ and $Qxf_{o}$ value of 22,000 GHz can be obtained from BNC3V7, multilayer type band pass filters using tapped method and conventional method were designed for PCS (Personal Communication System) applications. Tapped method by adopting input/output-tapping scheme the chip filter stucture becomes simpler and needs fewer layers than that using the conventional input/output-coupling scheme. A multilayer type band pass filter fabricated by screen-printing with silver electrode after tape casting. The simulated characteristics of the fabricated filters sintered at $900^{\circ}C$ were compared with the designed ones. Even though the centered frequencies of tapped and conventional band pass chaip filters were measured to shift about 90MHz downward, the band pass characteristics of both filters were similar that of designed ones. The spuriousresonance characteristic of tapped pass chip filter was better than that of conventional chip filer.

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Nanoarchitectures for Enhancing Light-harvesting and Charge-collecting Properties in Dye-sensitized Solar Cells

  • Jeong, Hyeon-Seok
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2011.10a
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    • pp.13.1-13.1
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    • 2011
  • Photoelectrochemical solar cells such as dye-sensitized cells (DSSCs), which exhibit high performance and are cost-effective, provide an alternative to conventional p-n junction photovoltaic devices. However, the efficiency of such cells plateaus at 11~12%, in contrast to their theoretical value of 33%. The majority of research has focused on improving energy conversion efficiency of DSSC by controlling nanostructure and exploiting new materials in photoelectrode consisting of semiconducting oxide nanoparticles and a transparent conducting oxide electrode (TCO) [1-5]. In this presentation, we introduce inverse opal-based scattering layers containing highly crystalline anatase nanoparticles and their feasibility for use as bi-functional light scattering layer is discussed in terms of optical reflectance and charge generation properties as a function of optical wavelength. A new ITO nanowire-based photoelecrode is also introduced and its unique charge collection property is presented, demonstrating potential use for highly efficient charge collection in DSSC.

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Nanostructured Photoelectrode Materials for Improving Light-Harvesting Properties in DSSCs

  • Jeong, Hyeon-Seok
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2011.05a
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    • pp.7.2-7.2
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    • 2011
  • Photoelectrochemical solar cells such as dye-sensitized cells (DSSCs), which exhibit high performance and are cost-effective, provide an alternative to conventional p-n junction photovoltaic devices. However, the efficiency of such cells plateaus at 11~12%, in contrast to their theoretical value of 33%. The majority of research has focused on improving energy conversion efficiency of DSSC by controlling nanostructure and exploiting new materials in photoelectrode consisting of semiconducting oxide nanoparticles and a transparent conducting oxide electrode (TCO). In this presentation, we introduce monodisperesed TiO2 nanoparticles prepared by forced hydrolysis method and their superiority as photoelectrode materials was characterized with aids of optical and electrochemical analysis. Inverse opal-based scattering layers containing highly crystalline anatase nanoparticles are also introduced and their feasibility for use as bi-functional light scattering layer is discussed in terms of optical reflectance and charge generation properties as a function of optical wavelength.

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Fomation and Properties of Multiple-Tone Spatial Light Modulator using Garnet Film with In-Plane Magnetization

  • Tsuzuki, A.;Uchida, H.;Takagi, H.;Lim, P.B.;Inoue, M.
    • Journal of Magnetics
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    • v.11 no.3
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    • pp.143-146
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    • 2006
  • We attempted to fabricate a new type of magneto optic spatial light modulator (MO-SLM) for multiple-tone modulation by using in-plane magnetization. In the MO-SLM, magnetic property of magneto-optical layer was modified to be suitable for multiple-tone expression by substituting Al in Bi:YIG film. At a driving current to 28 mA in an electrode of the fabricated MO-SLM, changes in brightness of pixels were observed using a polarization microscope.

Investigation of Chucking Force Distribution and Variation Characteristics for the Development of ESC in OLED Deposition (OLED 증착용 정전척 개발을 위한 척킹력 분포와 변화 특성 연구)

  • Choong Hwan Lim;Dong Kyun Min;Seong Bin Kim
    • Journal of the Semiconductor & Display Technology
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    • v.22 no.3
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    • pp.14-20
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    • 2023
  • The electrostatic chuck is a technology that uses electroadhesion to attach objects and is widely used in semiconductor and display processes. This research conducted Maxwell by varying parameters to examine the distribution and variations of chucking force in a bipolar-type ESC. The parameters that were changed include the material properties of the dielectric layer and attachment substrate, applied voltage to the electrode, and the gap and width between the electrodes. The analysis results showed that as the relative permittivity of the dielectric layer and substrate increased, the chucking force also increased, with the relative permittivity of the substrate having a greater impact on the chucking force. And increasing the applied voltage led to an increase in both the chucking force and its rate of change. Lastly, as the gap between the electrodes increased, the chucking force rapidly decreased until a certain distance, after which the decrease became less significant. On the contrary, increasing the electrode width resulted in a rapid increase in the chucking force until a certain width, beyond which the increase became less pronounced, eventually converging to a chucking force of 1700 Pa. This paper is expected to have high potential for the development and research of ESC for OLED deposition.

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Chimie Douce Reaction to Layered High-$T_c$ Superconducting / Super-ionic Conducting Heterostructures

  • Kim, Young-Il;Hwang, Seong-Ju;Yoo, Han-Ill;Choy, Jin-Ho
    • The Korean Journal of Ceramics
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    • v.4 no.2
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    • pp.95-98
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    • 1998
  • We have developed new type of superconducting-superionic conducting nanohybrids, $Ag_xI_wBi_2Sr_2Ca_{n-1}Cu_nO_y$ (n=1 and 2) by applying the chimie douce reaction to the superconducting Bi-based cuprates. These nanohybrids can be achieved by the stepwise intercalation whereby the $Ag^+$ ion is thermally diffused into the pre-intercalated iodine sublattice of $IBi_2Sr_2Ca_{n-1}Cu_nO_y$. According to the X-ray diffraction analysis, the Ag-I intercalates are found to have an unique heterostructure in which the superionic conducting Ag-I layer and the superconducting $IBi_2Sr_2Ca_{n-1}Cu_nO_y$ layer are regularly interstratified with a remarkable basal increment of ~7.3$\AA$. The systematic XAS studies demonstrate that the intercalation of Ag-I accompanies the charge transfer between host and guest, giving rise to a change in hole concentration of $CuO_2$ layer and to a slight $T_c$ change. The Ag K-edge EXAFS result reveals that the intercalated Ag-I has a $\beta$-AgI-like local structure with distorted tetrahedral symmetry, suggesting a mobile environment for the intercalated $Ag^+$ ion. In fact, from ac impedance analyses, we have found that the Ag-I intercalates possess a fast ionic conductivity ($\sigma_i=10^{-1.4}\sim 10^{-2.6}\Omega^{-1}\textrm{cm}^{-1}\;at\;270^{\circ}C$ with an uniform activation energy ($\DeltaE_a=0.22\pm 0.02$ eV). More interesting finding is that these intercalates exhibit high electronic conducting as well as ionic ones ($t_i$=0.02~0.60) due to their interstratified structure consisting of superionic conducting and superconducting layers. In this respect, these new intercalates are expected to be useful as an electrode material in various electrochemical devices.

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