• Title/Summary/Keyword: Bi-layer electrode

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Enhanced Cycle Performance of Bi-layer Structured LMO-NCM Positive Electrode at Elevated Temperature (겹층구조의 LMO-NCM 복합양극을 통한 고온 사이클 수명개선 연구)

  • Yoo, Seong Tae;Ryu, Ji Heon
    • Journal of the Korean Electrochemical Society
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    • v.25 no.4
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    • pp.184-190
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    • 2022
  • Spinel LiMn2O4 (LMO) and layered LiNi0.5Co0.2Mn0.3O2 (NCM) are widely used as positive electrode materials for lithium-ion batteries. LMO and NCM positive electrode materials have a complementary properties. LMO has low cost and high safety and NCM materials show a relatively high specific capacity and better cycle life even at elevated temperature. Therefore, the LMO and NCM active materials are blended and used as a positive electrode in large-size batteries for electric vehicles (xEV). In this study, the cycle performance of a blended electrode prepared by simply mixing LMO and NCM and a bi-layer electrode in which two electrode layers aree sequentially coated are compared. The bi-layer electrode prepared by composing the same ratio of both active materials has similar capacity and cycle performance to the blend electrode. However, the LN electrode coated with LMO first and then NCM is the best in the full cell cycle performance at elevated temperature, and the NL electrode, in which NCM is first coated with LMO has a faster capacity degradation than the blended electrode because LMO is mainly located on the top of the electrode adjacent to electrolyte and graphite negative electrode. Also, the LSTA (linear sweep thermmametry) analysis results show that the LN bi-layer electrode in which the LMO is located inside the electrode has good thermal stability.

Surface Reoxidation Mechanism and Electrical Properites of SBLC in $BaTiO_3$ System ($BaTiO_3$계 SBLC의 표면 재산화 형성 기구 및 전기적 성질)

  • 이형규;김호기
    • Journal of the Korean Ceramic Society
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    • v.23 no.5
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    • pp.55-60
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    • 1986
  • A mechanism for formation of surface reoxidation layer in Surface Boundary Layer Capacitor (SBLC) has been studied. SBLC were prepared by reduction of $BaTiO_3$ doped with $Bi_2O_3$ and electrode firing of silver paste containing $Bi_2O_3$ The apparent dielectric constant was in the order of $10^5$ and the insulation resistance larger than $10^6$$\Omega$ It can be expected that $Bi_2O_3$ dopant in $BaTiO_3$ plays the role of inhibition of grain growth and decreasing the resistivity of $BaTiO_3$. In order to confirm the process of surface reoxidation layer effects of atmosphere and annealing time in electrode sintering were investigated.

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The Effects of Composition on the Interface Resistance in Bi-System Glass Frit (Bi 계열 Glass Frit 조성이 계면저항에 미치는 영향)

  • Kim, In Ae;Shin, Hyo Soon;Yeo, Dong Hun;Jeong, Dae Yong
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.26 no.12
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    • pp.858-862
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    • 2013
  • The front electrode should be used to make solar cell panel so as to collect electron. The front electrode is used by paste type, printed on the Si-solar cell wafer and sintered at about $800^{\circ}C$. The paste is composed Ag powder and glass frit which make the ohmic contact between Ag electrode and n-type semiconductor layer. From the previous study, the Ag electrodes which used two commercial glass frit of Bi-system were so different on the interface resistance. The main composition of them was Bi-Zn-B-Si-O and few additives added in one of them. In this study, glass frit was made with the ratio of $Bi_2O_3$ and ZnO on the main composition, and then paste using glass frit was prepared respectively. And, also, the paste using the glass frit added oxide additives were prepared. The change of interface resistance was not large with the ratio of $Bi_2O_3$ and ZnO. In the case of G6 glass frit, 78 wt% $Bi_2O_3$ addition, the interface resistance was $190{\Omega}$ and most low. In the glass frit added oxide, the case of Ca increased over 10 times than it of G6 glass frit on the interface resistance. It was thaught that after sintering, Ca added glass frit was not flowed to the interface between Ag electrode and wafer but was in the Ag electrode.

Effect of melting temperature and additives on transparency of Bi based Transparent Dielectric Layer in Plasma Display Panel

  • Park, Ji-Su;Han, Sun-Mi;Hwang, Jong-Hee;Kim, Chang-Yeul;Choi, Duck-Kyun
    • 한국정보디스플레이학회:학술대회논문집
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    • 2005.07b
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    • pp.1229-1232
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    • 2005
  • We report the method of preventing the grey color of Bi based glass frits caused by reduction of $Bi_2O_3$. To prevent reduction of $Bi_2O_3$, we controlled the melting temperature. Low melting temperature reduces the reduction of $Bi_2O_3$ and that makes clarity transparent glass cullets. After firing, glass frits that melted at lower temperature showed better transparency. To prevent the browning, we used some additives like CuO, $CeO_2$, CoO and $TiO_2$. The colors of glass cullets were varied according to additives. After firing, dielectric layer contained additives showed better transparency than the one without additives. In the point of reaction between dielectric layer and Ag electrode, CuO was the most effective additive in preventing the yellowing.

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Effects of Al2O3 Coating on BiVO4 and Mo-doped BiVO4 Film for Solar Water Oxidation

  • Arunachalam, Maheswari;Yun, Gun;Lee, Hyo Seok;Ahn, Kwang-Soon;Heo, Jaeyeong;Kang, Soon Hyung
    • Journal of Electrochemical Science and Technology
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    • v.10 no.4
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    • pp.424-432
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    • 2019
  • Planar BiVO4 and 3 wt% Mo-doped BiVO4 (abbreviated as Mo:BiVO4) film were prepared by the facile spin-coating method on fluorine doped SnO2(FTO) substrate in the same precursor solution including the Mo precursor in Mo:BiVO4 film. After annealing at a high temperature of 450℃ for 30 min to improve crystallinity, the films exhibited the monoclinic crystalline phase and nanoporous architecture. Both films showed no remarkably discrepancy in crystalline or morphological properties. To investigate the effect of surface passivation exploring the Al2O3 layer, the ultra-thin Al2O3 layer with a thickness of approximately 2 nm was deposited on BiVO4 film using the atomic layer deposition (ALD) method. No distinct morphological modification was observed for all prepared BiVO4 and Mo:BiVO4 films. Only slightly reduced nanopores were observed. Although both samples showed some reduction of light absorption in the visible wavelength after coating of Al2O3 layer, the Al2O3 coated BiVO4 (Al2O3/BiVO4) film exhibited enhanced photoelectrochemical performance in 0.5 M Na2SO4 solution (pH 6.5), having higher photocurrent density (0.91 mA/㎠ at 1.23 V vs. reversible hydrogen electrode (RHE), briefly abbreviated as VRHE) than BiVO4 film (0.12 mA/㎠ at 1.23 VRHE). Moreover, Al2O3 coating on the Mo:BiVO4 film exhibited more enhanced photocurrent density (1.5 mA/㎠ at 1.23 VRHE) than the Mo:BiVO4 film (0.86 mA/㎠ at 1.23 VRHE). To examine the reasons, capacitance measurement and Mott-Schottky analysis were conducted, revealing that the significant degradation of capacitance value was observed in both BiVO4 film and Al2O3/Mo:BiVO4 film, probably due to degraded capacitance by surface passivation. Furthermore, the flat-band potential (VFB) was negatively shifted to about 200 mV while the electronic conductivities were enhanced by Al2O3 coating in both samples, contributing to the advancement of PEC performance by ultra-thin Al2O3 layer.

Experimental Fabrication of Low Pass Filter of $BiNbO_4$ Ceramics ($BiNbO_4$세라믹스를 이용한 저역통과 필터에 관한 연구)

  • Ko, Sang-Ki;Kim, Kyung-Yong;Kim, Byong-Ho;Choi, Whan
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.11 no.4
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    • pp.281-287
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    • 1998
  • $BiNbO_4$ ceramics doped with 0.07wt% $V_2O_5$ and 0.03wt% CuO (BNC3V7) were sucessfully sintered at $900^{\circ}C$ through the firing process with Ag electrode. The BNC3V7 shows typically Dielectric constant of 44.3, Thermal Coefficient of resonance Frequency(TCF) of 2 ppm/$^{\circ} and $Qxf_o$ value of 22,000 GHz. The laminated chip Low Pass Filter (LPF) is very sensitive to chip processing parameters, was confirmed by the computer simulation as a function of Q(Quality factors), filter size, capacitor layer thickness, inductor pattern widths. The multilayer type LPF was fabricated by screen-printing with Ag electrode after tape casting and then compared with the simulated characteristics. The results show that characterization of band pass width was similar to that of designed ones.

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Fabrication of Nano-Channeled Tin Oxide Film Electrode and Evaluation of Its Electrochemical Properties (나노 채널 구조를 가진 산화 주석 박막 전극 제조 및 전기화학적 특성 평가)

  • Park, Su-Jin;Shin, Heon-Cheol
    • Korean Journal of Materials Research
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    • v.22 no.1
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    • pp.1-7
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    • 2012
  • Thin film electrode consisting purely of porous anodic tin oxide with well-defined nano-channeled structure was fabricated for the first time and its electrochemical properties were investigated for application to an anode in a rechargeable lithium battery. To prepare the thin film electrode, first, a bi-layer of porous anodic tin oxides with well-defined nano-channels and discrete nano-channels with lots of lateral micro-cracks was prepared by pulsed and continuous anodization processes, respectively. Subsequent to the Cu coating on the layer, well-defined nano-channeled tin oxide was mechanically separated from the specimen, leading to an electrode comprised of porous tin oxide and a Cu current collector. The porous tin oxide nearly maintained its initial nano-structured character in spite of there being a series of fabrication steps. The resulting tin oxide film electrode reacted reversibly with lithium as an anode in a rechargeable lithium battery. Moreover, the tin oxide showed far more enhanced cycling stability than that of powders obtained from anodic tin oxides, strongly indicating that this thin film electrode is mechanically more stable against cycling-induced internal stress. In spite of the enhanced cycling stability, however, the reduction in the initial irreversible capacity and additional improvement of cycling stability are still needed to allow for practical use.

Sensing Characteristics of Tyrosinase Immobilized and Tyrosinase, Laccase Co-immobilized Platinum Electrodes

  • Quan, De;Kim, You-Sung;Shin, Woon-Sup
    • Bulletin of the Korean Chemical Society
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    • v.25 no.8
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    • pp.1195-1201
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    • 2004
  • Tyrosinase was covalently immobilized on platinum electrode according to the method we developed for laccase (Bull. Korean Chem. Soc. 2002, 23(7), 385) and p-chlorophenol, p-cresol, and phenol could be detected with sensitivities of 334, 139 and 122 nA/ ${\mu}M$ and the detection limits of 1.0, 2.0, and 2.5 ${\mu}M$, respectively. The response time ($t_{90\%}$) is 3 seconds for p-chlorophenol, and 5 seconds for p-cresol and phenol. The optimal pHs of the sensor are in the range of 5.0- 6.0. This sensor can tolerate at least 500 times repeated injections of p-chlorophenol with retaining 80% of initial activity. In case of tyrosinase and laccase co immobilized platinum electrode, the sensitivities are 560 nA/ ${\mu}M$ for p-phenylenediamine (PPD) and 195 nA/ ${\mu}M$ for p-chlorophenol, respectively. The sensitivity of the bi-enzyme sensor for PPD increases 70% compared to that of only laccase immobilized one, but the sensitivity for p-chlorophenol decreases 40% compared to that of only tyrosinase immobilized one. The sensitivity increase for the bi-enzyme sensor for PPD can be ascribed to the additional catalytic function of the co-immobilized tyrosinase. The sensitivity decrease for p-chlorophenol can be explained by the “blocking effect” of the co-immobilized laccase, which hinders the mass transport through the immobilized layer. If PPD was detected with the electrode that had been used for p-chlorophenol, the sensitivity decreased 20% compared to that of the electrode that had been used only for PPD. Similarly, if p-chlorophenol was detected with PPD detected electrode, the sensitivity also decreased 20%. The substrate-induced conformation changes of the enzymes in a confined layer may be responsible for the phenomena.

Effect of Ti Adhesion Layer on the Electrical Properties of BMNO Capacitor Using Graphene Bottom Electrodes (그래핀 하부전극을 이용하여 BMNO 케페시터의 특성 향상을 위한 Ti Adhesion Layer의 효과)

  • Park, Byeong-Ju;Yoon, Soon-Gil
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.26 no.12
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    • pp.867-871
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    • 2013
  • The Ti adhesion layers were deposited onto the glass substrate for transparent capacitors using $Bi_2Mg_{2/3}Nb_{4/3}O_7$ (BMNO) dielectric thin films. Graphene was transferred onto the Ti/glass substrate after growing onto the Ni/$SiO_2$/Si using rapid-thermal pulse CVD (RTPCVD). The BMNO dielectric thin films were investigated for the microstructure, dielectric and leakage properties in the case of capacitors with and without Ti adhesion layers. Leakage current and dielectric properties were strongly dependent on the Ti adhesion layers grown for graphene bottom electrode.

Effect of Ti Buffer Layer Thickness on the Electrical and Optical Properties of In2O3/Ti bi-layered Films (Ti 완충층 두께에 따른 In2O3/Ti 적층박막의 전기적, 광학적 특성 변화)

  • Moon, Hyun-Joo;Jeon, Jae-Hyun;Gong, Tae-Kyung;Kim, Daeil
    • Journal of the Korean Society for Heat Treatment
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    • v.28 no.6
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    • pp.296-299
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    • 2015
  • $In_2O_3/Ti$ bi-layered films were deposited on glass substrate at room temperature with radio frequency (RF) and direct current (DC) magnetron sputtering to consider the effect of Ti buffer layer on the electrical and optical properties. In a comparison of figure of merit, $In_2O_3$ 90 nm/Ti 10 nm thin films show the higher opto-electrical performance of $3.0{\times}10^{-4}{\Omega}^{-1}$ than that of the $In_2O_3$ single layer films ($2.6{\times}10^{-4}{\Omega}^{-1}$). From the observed results, it is supposed that the $In_2O_3\;90nm/TiO_2$ 10 nm bi-layered films may be an alternative candidate for transparent electrode in a transparent thin film transistor device.