• Economic and Environmental Geology
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• v.43 no.5
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• pp.491-503
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• 2010

Geochemical characteristics of the Moisan epithermal gold-silver deposit with total 140 samples in Haenam area, Jeollanamdo were studied by using multivariate statistical analysis (correlation analysis, factor analysis and cluster analysis). The correlation analysis reveals that Ag, Cu, Bi, Te are highly correlated with Au in the both non-mineralized and mineralized zone. It is resulted from the presence of Au-Ag bearing minerals (electrum, sylvanite, calaverite and stuezite) and non Au-Ag containing minerals (chalcopyrite, tellurobismuthite and bismuthinite). Mo shows relatively much higher correlation at the mineralized zone (0.615) than non-mineralized zone (0.269) which implies Mo content is strongly affected by Au-mineralization. While Mn, Cs, Fe, Se correlated with Au at the nonmineralized zone, they have negative correlation at the mineralized zone. Therefore, they seem to be eluviated elements from the host rock during gold mineralization. Sb is enriched during the gold mineralization showing high correlation at the mineralized zone and negative correlation at the non-mineralized zone. According to the factor analysis, Se, Ag, Cs, Te are the indicators of gold mineralization presence due to the strong affection of gold content in the non-mineralized zone. In the mineralized zone, on the other hand, Mo, Te and Sb, Cu are the indicators of gold and silver mineralization, respectively. While the cluster analysis reveals that Cd-Zn-Pb-S, Bi-Fe-Cu-Mn, Se-Te-Au-Cs-Ag, As-Sb-Ba are the similar behavior elements groups in the non-mineralized zone, Cd-Zn-Mn-Pb, Fe-S-Se, As-Bi-Cs, Ag-Sb-Cu, Au-Te-Mo are the similar behavior elements groups in the mineralized zone. Using multivariate statistical analysis as mentioned above makes it possible to compare the behavior of presented minerals and difference of geochemical characteristics between mineralized and non-mineralized zone. Therefore, it will be expected a useful tool on the similar type of mining exploration.

• Proceedings of the Membrane Society of Korea Conference
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• 1996.10a
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• pp.60-61
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• 1996

염색폐수를 처리하기 위하여, 일반적으로 물리.화학적 공정과 호기성 생물학적 공정을 조합한 방법들을 사용하고 있다. 하지만 호기성 생물학적 공정은 난분해성 물질의 제거능력이 낮고, 염색폐수의 주된 오염원인 염료분자가 호기성 미생물에 대한 에너지원으로 적합하지 않아 분해되기 어려우며, 물리.화학적 공정을 이용한 처리방법으로도 높은 처리효율을 얻을 수가 없다. 이러한 문제점을 극복하기 위하여 염색폐수 처리에 혐기-호기공정을 이용하며, 혐기성 공정에서 생물학적으로 분해되기 어려운 고분자 물질들을 가수분해하여 생물학적으로 분해가능한 저분자물질로 전환시키고, 호기성 공정에서 저분자 물질을 효과적으로 처라할 수 있기때문에 기존의 염색폐수 처리공정에 비하여 훨씬 높은 처리효율을 얻을 수 있다. 특히, 혐기성 미생물은 호기성 미생물에 비하여 난분해성 물질에 대한 분해력이 높고, 생물독성 물질에 대한 내성이 강하기 때문에 수중생물에 유해한 염료를 함유한 염색폐수의 색도제거에 효과적인 것으로 기대된다. 또한, 막분리 공정은 유기물 및 미생물이 막표면에 축적, 증식함으로써 막세공에 막힘현상을 초래하여 역세척 등의 물리적인 방법이나 화학약품을 이용한 화학적 세척 방법으로도 투과플럭스의 회복이 불가능한 상태를 유발함으로 막의 수명을 단축시키는 원인이 된다. 따라서, 혐기-호기공정과 조합하면 색도성분 제거 및 막 오염의 원인이 되는 유기물 및 용존성 고형물을 제거하고, 막 오염의 억제를 통한 후 수염의 연장은 물론, 처리수의 수질향상에 활용될 수 있을 것으로 사료된다.1로 강구와 함께 공구강 vial에 장입 후, Spex mixer/mill을 이용하여 기계적 합금화 하였다. 기계적 합금화 공정으로 제조한 분말에 대한 X-선 회절분석과 시차 열분석으로 합금화 정도를 분석하였다. (Bi1-xSbx)2Te3 및 Bi2(Te1-ySey)3 합금분말을 10-5 torr의 진공중에서 300℃∼550℃의 온도로 30분간 가압소결하였다. 가압소결체의 파단면에서의 미세구조를 주사전자현미경으로 관찰하였으며, 상온에서 가압소결체의 열전특성을 측정하였다. (Bi1-xSbx)2Te3의 기계적 합금화에 요구되는 공정시간은 Sb2Te3 함량에 따라 증가하여 x=0.5 조성에서는 4 시간 45분, x=0.75 조성에서는 5 시간, x=1 조성에서는 6 시간 45분의 vibro 밀링이 요구되었다. n형 Bi2(Te1-ySey)3 합금분말의 제조에 요구되는 밀링시간 역시 Bi2Se3 함량 증가에 따라 증가하였으며 Bi2(Te0.95Se0.05)3 합금분말의 제조에는 2시간, Bi2(Te0.9Se0.1)3 및 Bi2(Te0.85Se0.15)3 합금분말의 형성에는 3시간의 bivro 밀링이 요구되었다. 기계적 합금화로 제조한 p형 (Bi0.2Sb0.8)2Te3 및 n형 Bi2(Te0.9Se0.1)3 가압 소결체는 각기 2.9x10-3/K 및 2.1x10-3/K 의 우수한 성능지수를 나타내었다.ering)가 필수적이다. 그러나 침전법에서 얻게 되는 분말은 매우 미세하여 colloid를 형성하게 되며, 이러한 colloid 상태의 미세한 침전입자가 filte

• Electrical & Electronic Materials
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• v.9 no.1
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• pp.67-75
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• 1996

This paper has presented the characteristics of thermoelectric devices and the plots of thermoelectric cooling and heating as a function of currents for different temperatures. The maximum cooling and heating(.DELTA.T) for (BiSb)$\_$2/Te$\_$3/ and Bi$\_$2/(TeSe)$\_$3/ as a function of currents is about 75.deg. C, A solderable ceramic insulated thermoelectric module. Each module contains 31 thermoelectric devices. Thermoelectric material is a quaternary alloy of bismuth, tellurium, selenium, and antimony with small amounts of suitable dopants, carefully processed to produce an oriented polycrystalline ingot with superior anisotropic thermoelectric properties. Metallized ceramic plates afford maximum electrical insulation and thermal conduction. Operating temperature range is from -156.deg. C to +104.deg. C. The amount of Peltier cooling is directly proportional to the current through the sample, and the temperature gradient at the thermoelectric materials junctions will depend on the system geometry.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09a
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• pp.459-460
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• 2006

N-type $Bi_2Te_3-Sb_2Te_3$ solid solutions doped with 1$CdCl_2$ was prepared by melt spinning, crushing and vacuum sintering processes. Microstructure, bending strength and thermoelectric property were investigated as a function of the doping quantity from 0.03wt.% to 0.10wt.% and sintering temperature from $400^{\circ}C$ to $500^{\circ}C$, and finally compared with those of conventionally fabricated alloys. The alloy showed a good structural homogeneity as well as bending strength of $3.88Kgf/mm^2$. The highest thermoelectric figure of merit was obtained by doping 0.03wt.% and sintering at $500^{\circ}C$.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09a
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• pp.480-481
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• 2006

The n-type $(95%Bi_2Te_3-5%Bi_2Se_3)$ compound was newly fabricated by gas atomization and hot extrusion, which is considered to be a mass production technique of this alloy. The effect of powder size on thermoelectric properties of 0.04% $SbI_3$ doped $95%Bi_2Te_3-5%Bi_2Se_3$ alloy were investigated. Seebeck coefficient $({\alpha})$ and Electrical resistivity $(\rho)$ increased with increasing powder size due to the decrease in carrier concentration by oxygen content. With increasing powder size, the compressive strength of $95%Bi_2Te_3-5%Bi_2Se_3$ alloy was increased due to the relative high density. The compound with ${\sim}300\;{\mu}m$ size shows the highest power factor among the four different powder sizes. The rapidly solidified and hot extruded compound using $200[\sim}300{\mu}m$ powder size shows the highest compressive strength.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.304.2-304.2
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• 2014

Chalcogenides (Te,Se) and pnictogens(Bi,Sb) materials have been widely investigated as thermoelectric materials. Especially, Bi2Te3 (Bismuth telluride) compound thermoelectric materials in thin film and nanowires are known to have the highest thermoelectric figure of merit ZT at room temperature. Currently, the thermoelectric material research is mostly driven in two directions: (1) enhancing the Seebeck coefficient, electrical conductivity using quantum confinement effects and (2) decreasing thermal conductivity using phonon scattering effect. Herein we demonstrated influence of annealing temperature on structural and thermoelectrical properties of Bismuth-telluride-selenide ternary compound thin film. Te-rich Bismuth-telluride-selenide ternary compound thin film prepared co-deposited by thermal evaporation techniques. After annealing treatment, co-deposited thin film was transformed amorphous phase to Bi2Te3-Bi2Te2Se1 polycrystalline thin film. In the experiment, to investigate the structural and thermoelectric characteristics of Bi2Te3-i2Te2Se1 films, we measured Rutherford Backscattering spectrometry (RBS), X-ray diffraction (XRD), Raman spectroscopy, Scanning eletron microscopy (SEM), Transmission electron microscopy (TEM), Seebeck coefficient measurement and Hall measurement. After annealing treatment, electrical conductivity and Seebeck coefficient was increased by defect states dominated by selenium vacant sites. These charged selenium vacancies behave as electron donors, resulting in carrier concentration was increased. Moreover, Thermal conductivity was significantly decreased because phonon scattering was enhanced through the grain boundary in Bi2Te3-Bi2Te2Se1 polycrystalline compound. As a result, The enhancement of thermoelectric figure-of-merit could be obtained by optimal annealing treatment.

• Journal of Powder Materials
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• v.24 no.5
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• pp.357-363
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• 2017

In this study, Bi-Sb-Te thermoelectric materials are produced by mechanical alloying (MA) and spark plasma sintering (SPS). To examine the influence of the milling atmosphere on the microstructure and thermo-electric (TE) properties, a p-type Bi-Sb-Te composite powder is mechanically alloyed in the presence of argon and air atmospheres. The oxygen content increases to 55% when the powder is milled in the air atmosphere, compared with argon. All grains are similar in size and uniformly, distributed in both atmospheric sintered samples. The Seebeck coefficient is higher, while the electrical conductivity is lower in the MA (Air) sample due to a low carrier concentration compared to the MA (Ar) sintered sample. The maximum figure of merit (ZT) is 0.91 and 0.82 at 350 K for the MA (Ar) and MA (Air) sintered samples, respectively. The slight enhancement in the ZT value is due to the decrease in the oxygen content during the MA (Ar) process. Moreover, the combination of mechanical alloying and SPS process shows a higher hardness and density values for the sintered samples.

• Bulletin of the Korean Chemical Society
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• v.19 no.12
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• pp.1283-1293
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• 1998

A solid state chemical approach to discover new mateials with enhanced thermoelectric properties is described. The aim is to construct three-dimensional bismuth chalcogenide framework structures which contain tonically interacting alkali or alkaline earth atoms. The alkali atoms tend to have soft "rattling" type phonon modes which result in very low thermal conductivity in these materials. Another desirable feature in this class of compounds is the low crystal symmetry and narrow band-gaps. Several promising materials such as BaBiTe3, KBi6.33S10, K2Bi8S13, β-K2Bi8Se13, K2.5Bi8.5Se14, Ba4Bi6Se13, Eu2Pb2Bi6Se13, Al1+xPb4-2xSb7+xSe15 (A=K, Rb), and CsBi4Te6 are described.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.04b
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• pp.9-11
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• 2009

열전박막은 유비쿼터스 센서 네트워크에서 사용될 초소형 자가발전 장치로 각광받고 있다. 본 실험에서 는 상온에서 주로 사용되는 $BiSbTe_3$ 열전물질을 유기 금속화학 증착법(MOCVD)을 이용하여 (0001) Sapphire기판 위에 성장하였다. 일반적으로 사용되는 기판의 세척 및 에칭과정을 거쳐 성장된 $BiSbTe_3$ 박막의 표면형상은 부분적으로 성장되지 않으며 불규칙한 결정립을 포함하는 박막의 형상을 나타내었으나 성장 전 기판의 표면처리 통하여 성장된 박막의 표면 형상을 크게 개선시킬 수 있었다. 이는 표면처리를 통하여 기판표면에 미세 결함을 형성 시켜 초기 박막성장 시 핵생성이 용이하도록 하였기 때문으로 해석되었다. 이러한 표면 처리기법은 성장된 박막의 열전 특성에 크게 영향을 끼치지 않았다. 따라서 다양하고 저가의 박막형 열전소자의 제작에 응용될 수 있을 것으로 기대된다.

• Journal of Powder Materials
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• v.24 no.2
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• pp.115-121
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• 2017

In this work, p-type Bi-Sb-Te alloys powders are prepared using gas atomization, a mass production powder preparation method involving rapid solidification. To study the effect of the sintering temperature on the microstructure and thermoelectric properties, gas-atomized powders are consolidated at different temperatures (623, 703, and 743 K) using spark plasma sintering. The crystal structures of the gas-atomized powders and sintered bulks are identified using an X-ray diffraction technique. Texture analysis by electron backscatter diffraction reveals that the grains are randomly oriented in the entire matrix, and no preferred orientation in any unique direction is observed. The hardness values decrease with increasing sintering temperature owing to a decrease in grain size. The conductivity increases gradually with increasing sintering temperature, whereas the Seebeck coefficient decreases owing to increases in the carrier mobility with grain size. The lowest thermal conductivity is obtained for the bulk sintered at a low temperature (603 K), mainly because of its fine-grained microstructure. A peak ZT of 1.06 is achieved for the sample sintered at 703 K owing to its moderate electrical conductivity and sustainable thermal conductivity.