• 제목/요약/키워드: Bi-Sb-Te

검색결과 117건 처리시간 0.027초

Fabrication and Characterization of Thermoelectric Thick Film by Using Bi-Te-Sb Powders

  • Yu, Ji-Hun;Bae, Seung-Chul;Ha, Gook-Hyun;Kim, Ook-Jung;Lee, Gil-Gun
    • 한국분말야금학회:학술대회논문집
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    • 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part 1
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    • pp.430-431
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    • 2006

  • Thermoelectric thick film was fabricated by screen printing process with using p-type Bi-Te-Sb powders. The powder was synthesized by melting, milling and sintering process and hydrogen reduced to enhance the thermoelectric property. The thick film of Bi-Te-Sb powder was fabricated by screen printing method and baked at the optimized conditions. The thermal conductivity, the electrical resistivity and Seeback coefficient of thick film were measured and the thermoelectric performance was analyzed in terms of film characteristics and its microstructure. Finally, the feasibility of thermoelectric thick film into micro cooling device on CPU chip was discussed in this study.

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Influence of Sn/Bi doping on the phase change characteristics of $Ge_2Sb_2Te_5$

  • Park T.J.;Kang M.J.;Choi S.Y.
    • 정보저장시스템학회논문집
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    • 제1권1호
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    • pp.93-98
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    • 2005

  • Rewritable optical disk is one of the essential data storage media in these days, which takes advantage of the different optical properties in the amorphous and crystalline states of phase change materials. As well known, data transfer rate is one of the most important parameter of the phase change optical disks, which is mostly limited by the crystallization speed of recording media. Therefore, we doped Sn/Bi to $Ge_2Sb_2Te_5$ alloy in order to improve the crystallization speed and investigated the dependence of phase change characteristics on Sn/Bi doping concentration. The Sn/Bi doped $Ge_2Sb_2Te_5$ thin film was deposited by RF magnetron co-sputtering system and phase change characteristics were investigated by X-ray diffraction (XRD), static tester, UV-visible spectrophotometer, electron probe microanalysis (EPMA), inductively coupled plasma mass spectrometer (ICP-MS) and atomic force microscopy (AFM). Optimum doping concentration of Bi and Sn were 5${\~}$6 at.$\%$ and the minimum time for crystallization was below than 20 ns. This improvement is correlated with the simple crystalline structure of Sn/Bi doped $Ge_2Sb_2Te_5$ and the reduced activation barrier arising from Sn/Bi doping. The results indicate that Sn/Bi might play an important role in the transformation kinetics of phase change materials..

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