• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.478-481
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• 2002

We carried out the experiments for fabricating $Bi_{2}Sr_{2}Ca_{2}Cu_{3}O_{x}$(Bi2223) superconductor thick films on Cu tapes. Cu-free (Bi,Pb)-Sr-Ca-0 powder mixtures were screen- printed on Cu tapes and heat-treated at 840-$860^{\circ}C$ for several minutes in air. Surface microstructures and phases of films were analyzed by XRD and optical microscope. The electric properties of superconducting films were examined by the four probe method. At heat-treatment temperature, the printing layers were in a partially molten state by liquid reaction between CuO in the oxidized copper tape and the precursors which were printed on Cu tapes. During the heat-treatment procedure, it is thought that Bi2223 superconducting particles nucleate at interfaces between Bi2212 phase and liquid.

• 한국결정성장학회지
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• 제9권2호
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• pp.137-140
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• 1999

Flux법에 의해 성장된 $Bi_2Sr_2CaCu_2O_{8+{\delta}}(Bi2212)$ 단결정의 초전도 특성에 미치는 열처리 및 불순물의 영향을 자화측정에 의해 조사하였다. 초전도 특성은 불순물인 Mg와 Al의 영향을 받음을 알 수 있었으며, 초전도 전이온도(T,) 는 Mg 불순물의 영향에 의해 보다 낮아졌다. 그러나 성장된 결정은 열처리에 의해 초전도 특성이 개선됨을 알 수 있었 으며, 특히 MgO 도가니 사용에 의해 성장된 결정이 $Al_2O_3$ 도가니에 비해서 반자계특성이 현저하게 증가되었다. 반자계 특성의 개선효과에 의해 Mg 불순물은 초전도 특성 열화의 주요 요소라고 생각될 수 없음을 알 수 있었다.

• 한국세라믹학회지
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• 제38권12호
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• pp.1104-1109
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• 2001

110K상의 산화물 고온초전도체를 B $i_{1.84}$P $b_{0.34}$S $r_{1.91}$C $a_{2.03}$C $u_{3.06}$ $O_{10+}$$\delta$/의 출발조성비로 고상반응법(solid-state reaction)에 의해 합성하였다. 이렇게 합성된 Bi계 110K상의 산화물 고온초전도 물질을 다시 분말 상태로 만든 후, Ag 금속분말을 10wt%, 30wt%, 50wt%의 각 비율로 혼합하였다. Ag 금속분말이 혼합된 시편들을 86$0^{\circ}C$~875$^{\circ}C$로 24시간 동안 최종 소결시켰다. 그후, 각 시편들에 대하여 x-선, $T_{c}$, SEM 등을 측정하여 Ag 혼합량에 대한 초전도특성 및 표면의 grain 크기변화 등에 대한 조사를 진행하였다. Ag 혼합량이 증가됨에 따라 Ag peak의 강도는 증가되었고, 시편 내 2223 상의 비율은 감소하고 2212상의 비율은 증가되었다.비율은 증가되었다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1991년도 추계학술대회 논문집 학회본부
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• pp.311-315
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• 1991

The formation and transition of 2212 and 2223 phase have been studied in BPSCCO system. The 2212 phase formed in early sintering state reacts on $Ca_2PbO_4,\;Ca_2CuO_3$ and CuO during sintering process and thus produces the 2223 phase. A long sintering period is need to fabricate the superconductor with large volume fraction of 2223 phase. Also, the thin plate-like grains composed of Bi, Sr, Ca and Cu contribute to 2223 phase formation. Though the sample has lower volume fraction of 2223 phase, the critical temperature is measured highly in case of the grain grown to plate-like shape. In this work, the critical temperature of the sample sintered for 264 hr in air was measured 108 K. Microstructure of the sample was varied with condition of heat treatment after sintering process and the sample annealed with $500^{\circ}C$ for 5 hr showed excellent charateristics of 2223 phase formation.

• Journal of information and communication convergence engineering
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• 제4권4호
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• pp.158-161
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• 2006

[ $Bi_2Sr_2Ca_nCu_{n+1}O_y(n{\geq}0)$ ] thin film is fabricatedvia two different processes using an ion beam sputtering method i.e. co-deposition and layer-by-layer deposition. A single phase of Bi2212 can be fabricated via the co-deposition process. While it cannot be obtained by the layer-by-layer process. Ultra-low growth rate in our ion beam sputtering system brings out the difference in Bi element adsorption between the two processes and results in only 30% adsorption against total incident Bi amount by layer-by-layer deposition, in contrast to enough Bi adsorption by co-deposition.

• 한국초전도ㆍ저온공학회논문지
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• 제6권1호
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• pp.1-5
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• 2004

Long length of Bi-2223/Ag superconducting wives were fabricated by stacking and drawing process with advanced heat-treatment schedules. Intermediate annealing was carried out to increase the homogeneity and uniformity of the superconducting filaments embedded in the silver matrix. Phase modification from tetragonal to orthorhombic Bi-2212 by pre heat treatment(PHT) was executed to improve the texture and phase transformation of Bi-2223. Drawing stress was measured to predict the sausaging and stress limit. Rolling Parameters such as thickness. width and winding tension were investigated to roll the tape with uniformity. 1 km length of Bi-2223/Ag superconducting wires were fabricated without any breakage. Critical current (Je) of 270 m length of superconducting tapes was measured over than $70 A/cm^2$ continuously after final sintering.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 제2회 학술대회 논문집 일렉트렛트 및 응용기술전문연구회
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• pp.40-44
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• 2000

$Bi_2Sr_2Ca_nCu_{n+1}O_y$($n{\geq}0$; BSCCO)thin film is fabricated via two different processes using an ion beam sputtering method i.e. co-deposition and layer-by-layer deposition. A single phase of Bi2212 can be fabricated via the co-deposition process. While it cannot be obtained by the layer-by-layer process. Ultra-low growth rate in our ion beam sputtering system brings out the difference in Bi element adsorption between the two processes and results in only 30% adsorption against total incident Bi amount by layer-by-layer deposition, in contrast to enough Bi adsorption by co-deposition.

• 한국전기전자재료학회논문지
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• 제13권9호
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• pp.796-800
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• 2000

Bi$_2$Sr$_2$Ca$_{n}$Cu$_{n+1}$ O$_{y}$(n$\geq$0; BSCCO) thin film is fabricated via two different processes using an ion beam sputtering method i.e. co-deposition and layer-by-layer deposition. A single phase of Bi2212 can be fabricated via the co-deposition process. While it cannot be obtained by the layer-by-layer process. Ultra-low growth rate in our ion beam sputtering system brings out the difference in Bi element adsorption between the two processes and results in only 30% adsorption against total incident Bi amount by layer-by-layer deposition, in contrast to enough Bi adsorption by co-deposition.on.n.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.329-330
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• 2005

Bi-Sr-Ca-Cu-O thin films have been fabricated by sputter deposition method. During the deposition, 10 and 90 wt%-ozone/oxygen mixture gas of typical pressure of $1\sim9\times10^{-5}$ Torr are supplied with ultraviolet light irradiation for oxidation. XRD and RHEED investigations reveal out that a buffer layer with some different compositions is formed at the early deposition stage of less than 10 units cell and then Bi-2201 oriented along the c-axis is grown.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.230-234
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• 2000

Bi$_2$Sr$_2$Ca$_{n}$Cu$_{n+1}$ O$_{y}$(n$\geq$0; BSCCO)thin film is fabricated via two different processes using an ion beam sputtering method i.e. co-deposition and layer-by-layer deposition. A single phase of Bi2212 can be fabricated via the co-deposition process. While it cannot be obtained by the layer-by-layer process. Ultra-law growth rate in our ion beam sputtering system brings out the difference in Bi element adsorption between the two processes and results in only 30% adsorption against total incident Bi amount by layer-by-layer deposition, in contrast to enough Bi adsorption by co-deposition.on.n.