• Progress in Superconductivity
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• v.1 no.1
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• pp.1-8
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• 1999

The magnetization and/or resistivity of high $T_c$ superconductors ($YBa_2Cu_3O_{7-\delta}$(YBCO) single crystal, $Bi_2Sr_2CaCu_2O_8$ (Bi-2212) single crystal, $Tl_2Ba_2CaCu_2O_8$ (Tl-2212) film, $HgBa_2Ca_2Cu_3O_8$ (Hg-1223) film) have been measured as a function of magnetic field H and temperature T. The extracted fluctuation part of the magnetization and conductivity exhibits a critical behavior consistent with the three-dimensional XY model. The dynamic critical exponent z does not sensitively vary with a type of the superconductors. The value of z ranges from 1.5 to $1.8{\pm}0.1$. However, the static critical exponent ${\nu}$ is the most largely increased in Tl-2212 that has a weaker interlayer coupling strength than YBCO; the value of ${\nu}$ is 0.669, 0.909, 1.19, and 1.338 for YBCO, Bi-2212, Hg-1223, and Tl-2212 respectively. The results indicate that the weak interlayer coupling along the c-axis of high $T_c$ superconductors near $T_c$ does not influence the dynamic critical exponent z (the same value of superfluid $^4He$), but significantly increases the static critical exponent ${\nu}$.

• Progress in Superconductivity
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• v.4 no.2
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• pp.176-179
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• 2003

A lot of efforts have been focused on the optimization of PIT parameters for Bi-2223/Ag wire. Bi-2223 superconducting wires with 55 filaments were fabricated by stacking, drawing process. Before rolling process, round wires were pre -annealed at 760 - 820 $^{\circ}C$ and low oxygen partial pressure. We confirmed that pre-annealing step was to transform Bi-2212 orthorhombic structure from Bi-2212 tetragonal structure and to reduce the formation of second phases. However Bi-2223 phases also were formed at higher than 76$0^{\circ}C$ of pre-annealing temperature. The engineering critical current densities (Je) of Bi-22231Ag tapes were sintered at low oxygen partial pressure were higher than t hat of the wires sintered at air. We could achieve 6500 A/${cm}^2$ of Je for the tape that was initially kept at slightly higher temperature than that of normal heat treatment.

• 전기의세계
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• v.56 no.6
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• pp.32-38
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• 2007

• Journal of the Korean Ceramic Society
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• v.31 no.7
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• pp.715-722
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• 1994

Off-axis supttering using shielder was used to efficiently prevent negative oxygen ions from resputtering deposited films. In this method, the substrate was located vertically to the target and shielded by the semicircled steel plate. By using this method, the resputtering could be reduced, and 2223 high-Tc phase could be formed at the lower substrate temperature and in the broader temperature region. As increasing the substrate temperature, 2212, 2223, 2212 superconducting phases were formed by turns. 2223 phase was formed above 2$\times$10-2 torr, and 2212 phase was formed above 4$\times$10-2 torr.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.503-506
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• 2002

BSCCO 2212 HTS was fabricated by CFP(centrifugal forming process). The powder was initially ground in the mixing ratio of 2:2::1:2 with 10% of SrSO$_4$. The temperature increased up to 1035$^{\circ}C$ and 1200$^{\circ}C$ for melting. The melt was poured into the preheated and rotating copper mould from 200 to 600$^{\circ}C$. The specimen was not broken by thermal impact when the melting temperature was over 1050$^{\circ}C$ and copper mould was preheated over 400$^{\circ}C$ for 30min. A tube type of specimen was annealed at 840$^{\circ}C$ or 860$^{\circ}C$ in oxygen atmosphere for 24hours. Typical microstructure was analyzed in terms of CFP parameters by XRD, SEM, and EDS and also superconducting characteristics were compared.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.9
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• pp.801-804
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• 2000

High-temperature superconductor of Bi-2212 system was fabricated by CFP(Centrifugal Forming Process). To make a uniform specimen slurry was prepared in the ratio of 7:3(powder : binder) and ball milled for 24 hours. Milled slurry was charged into a rotating mold with 450 rpm and dried at room temperature. Then the specimen was performed binder burn-out at 35$0^{\circ}C$ and heated for partial melting to 86$0^{\circ}C$. XRD analysis of most specimens were shown 2212 phase and observed a local plate shped microstructure with a well aligned c-axis direction from SEM images. Measured T$_{c}$(Critical temperature) was about 64 K.K.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.486-489
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• 2002

Temperature(T) dependence of the sheet resistance( $R_{$\square$}$) has been investigated on the c-axis oriented thin films of the (Bi2212/Bi2201) mixed crystal with different molar fractions. The $R_{$\square$}$-T superconducting characteristic deteriorated with reduction of the Bi2212 fraction, and almost disappears at 48 mol% where a superconductor-to-insulator transition took place, with the resistance on the normal state, RN, reaching 4.l㏀ at 80 K. This $R_{N}$ value is close to the universal quantum number, h/(2e)$^2$≡6.5㏀ predicted by the Kosterlitz-Thouless(KT) transition theory. The $R_{$\square$}$-T characteristics of the 48 mol% thin film can be elucidated as a competitive process of KT transition brought about by charge or vortex in the two-dimensional layer structure.e.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.10a
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• pp.59-63
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• 2000

BSCCO thin films are fabricated via a co-deposition process by an ion beam sputtering with an ultra-low growth rate, and sticking coefficients of the respective elements are evaluated. The sticking coefficient of Bi element exhibits a characteristic temperature dependence : almost a constant value of 0.49 below $730^{\circ}C$ and decreases linearly with temperature over $730^{\circ}C$ This temperature dependence can be elucidated from the evaporation and sublimation rates of bismuth oxide, $Bi_2O_3$, from the film surface. It is considered that the liquid phase of the bismuth oxide plays an important role in the Bi(2212) phase formation in the co-deposition process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.583-586
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• 2003

BiSrCaCuO superconducting thin films have been fabricated by co-deposition using the faraday cup. Despite setting the composition of thin film Bi2212, Bi(2201, 2212, 2223) phase were appeared. It was confirmed the obtained field of stabilizing phase was represented in the diagonal direction of the right below end in the Arrhenius plot of temperature of the substrate and $PO_3$, and it was distributed in the rezone.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2007.06a
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• pp.517-520
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• 2007

The BSCCO thin film fabricated by using the layer by layer deposition method was compared with the BSCCO thin film fabricated by using the evaporation method. Reevaporation in the form of Bi atoms or $Bi_2O_3$molecules easily bring out the deficiency of Bi atoms in thin film due to the long sputtering time of the layer by layer deposition. On the other hand, the respective atom numbers corresponding to BSCCO phase is concurrently supplied on the film surface in the evaporation deposition process and leads to BSCCO phase formation. Also, it is cofirmed that by optimizing the deposition condition, each single phase of the Bi2201 phase and the Bi2212 phase can be fabricated, the sticking coefficient of Bi element is clearly related to the changing of substrate temperature and the formation of the Bi2212 phase.