• Title, Summary, Keyword: Benzotriazole (BTA)

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Inhibition of Pitting Corrosion Failure of Copper Tubes in Wet Sprinkler Systems (스프링클러 구리배관의 공식 파손 억제)

  • Suh, Sang Hee;Suh, Youngjoon;Lee, Jonghyuk;Kwon, HyukSang
    • Corrosion Science and Technology
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    • v.19 no.2
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    • pp.89-99
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    • 2020
  • The inhibition of pitting corrosion failure of copper sprinkler tubes in wet sprinkler systems was studied. First, an apparatus and technology for removing air in the sprinkler tubes by vacuum pumping and then filling the tubes with water were developed. Using this apparatus and technology, three methods for inhibiting the pitting corrosion of the copper sprinkler tubes installed in several apartment complexes were tested. The first one was filling the sprinkler tubes with water bubbled by high-pressure nitrogen gas to reduce the dissolved oxygen concentration to lower than 2 ppm. In the second method, the dissolved oxygen concentration of water was further reduced to lower than 0.01 ppm by sodium sulfite. In the third method, the sprinkler tubes were filled with benzotriazole (BTAH) dissolved in water. The third method was the most effective, reducing the failure frequency of the sprinkler tubes due to pitting corrosion by more than 80%. X-ray photoelectron spectroscopy analyses confirmed that a Cu-BTA layer was well coated on the inside surface of the corrosion pit, protecting it from corrosion. A potentiodynamic polarization test showed that BTAH should be very effective in reducing the corrosion rate of copper in the acidic environment of the corrosion pit.

유기물 제거를 위한 Post Cu CMP 세정 용액 개발

  • Gwon, Tae-Yeong;Prasad, Y. Nagendra;Venkatesh, R. Prasanna;Park, Jin-Gu
    • Proceedings of the Materials Research Society of Korea Conference
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    • pp.32.2-32.2
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    • 2011
  • 반도체 생산공정에서 CMP (Chemical-mechanical planarization) 공정은 우수한 전기전도성 재료인 Cu의 사용과 다층구조의 소자를 형성하기 위해서 도입되었으며, 최근 소자의 집적도가 증가함에 따라 CMP 공정 비중은 점점 높아지고 있다. Cu CMP 공정에서 연마제인 슬러리는 금속 표면과의 물리적 화학적 반응을 동시에 사용하여 표면을 연마하게 되며, 연마특성을 향상시키기 위해 산화제, 부식방지제, 분산제 및 다양한 계면활성제가 첨가된다. 하지만 슬러리는 Cu 표면을 평탄화하는 동시에 오염입자, 유기오염물, 스크레치, 표면부식 등을 발생시키며 결과적으로 소자의 결함을 야기시킨다. 특히 부식방지제로 사용되는 BTA (Benzotriazole)은 Cu CMP 공정 중 Cu-BTA 형태로 표면에 흡착되어 오염원으로 작용하며 입자오염을 증가시시고 건조공정에서 물반점 등의 표면 결함을 발생시킨다. 이러한 문제점을 해결하기 위해 Cu 표면에서 식각과 부식반응을 최소화하며, 오염입자 제거 및 유기오염물을 효과적으로 제거하기 위한 Post-CMP 세정 공정과 세정액 개발이 요구된다. 본 연구에서는 오염입자 및 유기물 제거와 동시에 표면 거칠기와 부식현상을 제어할 수 있는 post Cu CMP 세정액을 개발 평가하였다. 오염입자 및 유기오염물을 제거하기 위해서 염기성 용액인 TMAH 사용하였으며, Cu 이온을 용해할 수 있는 Chelating agent와 표면 부식을 억제하는 부식 방지제를 사용하여 세정액을 합성하였다. 접촉각 측정과 FESEM(field Emission Scanning Electron Microscope) 분석을 통하여 CMP 공정에서 발생하는 유기오염물과 오염입자의 흡착과 제거를 확인하였으며 Cu 웨이퍼 세정 전후의 표면 거칠기의 변화와 식각량을 AFM(Atomic Force Microscope)과 4-point probe를 사용하여 각각 평가하였다. 또한 세정액 내에서의 연마입자의 zeta-potential을 측정 및 조절하여 세정력을 향상시켰다. 개발된 세정액과 Cu 표면에서의 화학반응 및 부식방지력은 potentiostat를 이용한 전기화학 분석법을 통해서 chelating agent와 부식방지제의 농도를 최적화 시켰다. 개발된 세정액을 적용함으로써 Cu-BTA 형태의 유기오염물과 오염입자들이 효과적으로 제거됨을 확인하였다.

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The Effect of Additive on the Electric conductivity of Insulating Oil (절연유의 전기전도에 미치는 첨가제의 영향)

  • 정광현;김영봉;김용운;임헌찬;이덕출
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • pp.158-161
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    • 1996
  • The static charges are generated by streaming electrification phenomena in insulating oil flowing by force for the purpose of cooling at the internal of Ultra-high power transformer. In this thesis, their elimination method was studied. In this paper the effect of Additive on the electric conductivity of Insulating oil is studied. The variation of electric conductivity disappear when Additive is molten in insulating oil BTA(Benzotriazole) appear more variation of electric conductivity than that of SP-S10(Sorbitan mono-stearate). But the variation is not enough to decrease streaming electrification of insulating oil($\sigma$>10$\^$-12/[S/cm]).

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Effect of buffing on particle removal in post-Cu CMP cleaning (구리 CMP 후 연마입자 제거에 버프 세정의 효과)

  • Kim, Young-Min;Cho, Han-Chul;Jeong, Hae-Do
    • Proceedings of the KSME Conference
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    • pp.1880-1884
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    • 2008
  • Cleaning is required following CMP (chemical mechanical planarization) to remove particles. The minimization of particle residue is required with each successive technology generation, and the cleaning of wafers becomes more complicated. In copper damascene process for interconnection structure, it utilizes 2-steop CMP consists of Cu CMP and barrier CMP. Such a 2-steps CMP process leaves a lot of abrasive particles on the wafer surface, cleaning is required to remove abrasive particles. In this study, the buffing is performed various conditions as a cleaning process. The buffing process combined mechanical cleaning by friction between a wafer and a buffing pad and chemical cleaning by buffing solution consists of tetramethyl ammonium hydroxide (TMAH)/benzotriazole(BTA).

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Effect of Chemical Mechanical Cleaning(CMC) on Particle Removal in Post-Cu CMP Cleaning (구리 CMP 후 연마입자 제거에 화학 기계적 세정의 효과)

  • Kim, Young-Min;Cho, Han-Chul;Jeong, Hae-Do
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.33 no.10
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    • pp.1023-1028
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    • 2009
  • Cleaning is required following CMP (chemical mechanical planarization) to remove particles. The minimization of particle residue is required with each successive technology generation, and the cleaning of wafers becomes more complicated. In copper damascene process for interconnection structure, it utilizes 2-step CMP consists of Cu and barrier CMP. Such a 2-steps CMP process leaves a lot of abrasive particles on the wafer surface, cleaning is required to remove abrasive particles. In this study, the chemical mechanical cleaning(CMC) is performed various conditions as a cleaning process. The CMC process combined mechanical cleaning by friction between a wafer and a pad and chemical cleaning by CMC solution consists of tetramethyl ammonium hydroxide (TMAH) / benzotriazole (BTA). This paper studies the removal of abrasive on the Cu wafer and the cleaning efficiency of CMC process.