• 한국안전학회지
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• 제5권1호
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• pp.19-29
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• 1990

The objective of this paper is to investigate the effect of residual stresses on the $\Delta$K$\sub$th/ and fatigue crack growth behavior of butt weldments. For this purpose, transverse butt sutmerged arc welding was performed on SM50A steel plate and CT(compact tension) specimens which loading direction is perpendicular to weld bead were selected. Welding residual stresses distribution on the specimen was determined by hole drilling method. The case of crack located parallel to weld bead, the states of as weld and PWHT, $\Delta$K$\sub$th/ of specimens(HAZ, weld zone) was higher than that of the base metal probably because of the compressive residual stresses of crack tip. In low $\Delta$K region, it is estimated that the effects of residual stresses for da/dN are great. In region II, the da/dN of weldments in as weld state was lower than that of the base metal. Though da/dN of Weldments in PWHT state was similar to that of the base metal. The constant of power law, m in two states consisted with the base metal. Therefore , it is estimated that the value of m is not affected by residual stresses. Fatigue crack growth behavior of weldments consisted with the base metal considering the effective stress intensity factor range($\Delta$K$\sub$eff/) included the effect of initial residual stress(Kres). Thus, we can predict the fatigue crack growth behavior of weldment by knowing the distribution of initial residual stress at the crack tip.

• 한국전기전자재료학회논문지
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• 제29권3호
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• pp.147-151
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• 2016

Graphene has a monolayer crystal structure formed with C-atoms and has been used as a base layer of HETs (hot electron transistors). Graphene HETs have exhibited the operation at THz frequencies and higher current on/off ratio than that of Graphene FETs. In this article, we report on the preliminary results of current characteristics from the HETs which are fabricated utilizing highly doped Si collector, graphene base, and 5 nm thin $Al_2O_3$ tunnel layers between the base and Ti emitter. We have observed E-B forward currents are inherited to tunneling through $Al_2O_3$ layers, but have not noticed the Schottky barrier blocking effect on B-C forward current at the base/collector interface. At the common-emitter configuration, under a constant $V_{BE}$ between 0~1.2V, $I_C$ has increased linearly with $V_{CE}$ for $V_{CE}$ < $V_{BE}$ indicating the saturation region. As the $V_{CE}$ increases further, a plateau of $I_C$ vs. $V_{CE}$ has appeared slightly at $V_{CE}{\simeq}V_{BE}$, denoting forward-active region. With further increase of $V_{CE}$, $I_C$ has kept increasing probably due to tunneling through thin Schottky barrier between B/C. Thus the current on/off ration has exhibited to be 50. To improve hot electron effects, we propose the usage of low doped Si substrate, insertion of barrier layer between B/C, or substrates with low electron affinity.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.63-63
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• 2009

In this work, we demonstrate 800V 4H-SiC power DMOSFETs with several structural alterations to observe static DC characteristics, such as a threshold voltage ($V_{TH}$) and a figure of merit ($V_B^2/R_{SP,ON}$). To optimize the static DC characteristics, we consider four design parameters; (a) the doping concentration ($N_{CSL}$) of current spreading layer (CSL) beneath the p-base region, (b) the thickness of p-base ($t_{BASE}$), (c) the doping concentration ($N_J$) and width ($W_J$) of a JFET region, (d) the doping concentration ($N_{EPI}$) and thickness ($t_{EPI}$) of epi-layer. Design parameters are optimized using 2D numerical simulations and the 4H-SiC DMOSFET structure results in high figure of merit ($V_B^2/R_{SP,ON}$>~$340MW/cm^2$) for a power MOSFET in $V_B{\sim}1200V$ range.

• Journal of Ecology and Environment
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• 제33권3호
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• pp.187-193
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• 2010

Seed germination is a biological process that is affected by a variety of genetic and environmental factors. The cardinal temperature and thermal time are required for germination. The principal objective of this study was to identify and characterize variations in the base, optimum, and maximum germination temperatures of Haloxylon aphyllum L. from two seed sources, in order to establish models for use in predicting seeding dates. Mature H. aphyllum seeds were germinated at temperatures between 5 and $35^{\circ}C$. The germination behavior of H. aphyllum seeds to different temperature regimens in light was evaluated over a temperature range of $5-35^{\circ}C$ at intervals of $5^{\circ}C$. The rate of germination increased between base and optimum thermal conditions, and decreased between optimum and maximum thermal conditions; the germination rate varied in a linear fashion at both sub-optimal and supra-optimal temperatures. The linear regression fit the range of germination rates at $5^{\circ}C$ to $25^{\circ}C$ and $25^{\circ}C$ to $30^{\circ}C$, and thus the base temperature, optimum temperature, and maximum temperature for the germination of H. aphyllum were measured to be $0.6^{\circ}C$, $25.69^{\circ}C$, $37.90^{\circ}C$, and $1.76^{\circ}C$, $21.56^{\circ}C$, $37.90^{\circ}C$ for Qom and the Fars dune desert respectively.

• 한국전기전자재료학회논문지
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• 제22권8호
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• pp.637-640
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• 2009

In this work, we demonstrate 800 V 4H-SiC power DMOSFETs with several structural alterations to obtain a low threshold voltage ($V_{TH}$) and a high figure of merit ($V_B\;^2/R_{SP,ON}$), To optimize the device performance, we consider four design parameters; (a) the doping concentration ($N_{CSL}$) of current spreading layer (CSL) beneath the p-base region, (b) the thickness of p-base ($t_{BASE}$), (c) the doping concentration ($N_J$) and width ($W_J$) of a JFET region, (d) the doping concentration ($N_{EPI}$) and thickness ($t_{EPI}$) of epi-layer. These parameters are optimized using 2D numerical simulation and the 4H-SiC DMOSFET structure results in a threshold voltage ($V_{TH}$) below $^{\sim}$3.8 V, and high figure of merit ($V_B\;^2/R_{SP,ON}$>$^{\sim}$200 $MW/cm^2$) for a power MOSFET in $V_B\;^{\sim}$800 V range.

• 전자공학회논문지A
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• 제28A권10호
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• pp.821-829
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• 1991

In this paper, a BICMOS technology that has CMOS devices for digital application and bipolar devices for high voltage (80V) analog applications is presented. Basic concept to design BICMOS device is simple process technology without making too many performance trade-offs. The base line process is poly gate p-well CMOS process and three additional masking steps are added to improve bipolar characteristics. The key ingredients of bipolar integration are n+ buried layer process, up/down isolation process and p-well base process. The bipolar base region is formed simultaneously with the region of CMOS p-well area to reduce mask and heat cycle steps. As a result, hFE value of NPN bipolar transistor is 100-150(Ic=1mA). Collector resistance value is 138 ohm in case of bent type collector structure. Breakdown voltage of BVebo, BVcbo and BVceo are 21V, 115V and78V respectively. Threshold voltage is ${\pm}$1.0V for NMOS and PMOS transistor. Breakdown voltage of NMOS and PMOS transistor is obtained 22V and 19V respectively. 41 stage CMOS ring oscillator has 0.8ns delay time.

• 대한기계학회논문집A
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• 제27권9호
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• pp.1444-1450
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• 2003

The fatigue life and tensile strength of JLF-1 steel (Fe-9Cr-2W-V-Ta) and its TIG weldment were investigated at the room temperature and $400^{\circ}C$. Four kinds of test specimens, which associated with the rolling direction and the TIG welding direction were machined. The base metal of JLF-1 steel represented almost anisotropy in the tensile properties for the rolling direction. And the base metal of JLF-1 steel showed lower strength than that of TIG weldment. Also, the strength of all materials entirely decreased in accordance with elevating test temperature. Moreover, the fatigue limit of weld metal was largely increase than that of base metal at both temperatures. The fatigue limit of JLF-1 steel decreased in accordance with elevating test temperature. The fatigue limit of JLF-1 steel decreased in accordance with elevating test temperature. The SEM fractography of tensile test specimen showed conspicuous cleavage fracture of a radial shape. In case of fatigue life test specimen, there were so many striations at crack initiation region, and dimple was observed at final fracture region as a ductile fracture mode.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.553-556
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• 1999

This paper presents a proper condition to achieve above 19 % conversion efficiency using PC1D simulator. Cast poly-Si wafers with resistivity of 1 $\Omega$-cm and thickness of 250 ${\mu}{\textrm}{m}$ were used as a starting material. Various efficiency influencing parameters such as rear surface recombination velocity and minority carrier diffusion length in the base region, front surface recombination velocity, junction depth and doping concentration in the Emitter layer, BSF thickness and doping concentration were investigated. Optimized cell parameters were given as rear surface recombination of 1000 cm/s, minority carrier diffusion length in the base region 200 ${\mu}{\textrm}{m}$, front surface recombination velocity 100 cnt/s, sheet resistivity of emitter layer 100 $\Omega$/$\square$, BSF thickness 5 ${\mu}{\textrm}{m}$, doping concentration 5$\times$10$^{19}$ cm$^3$ . Among the investigated variables, we learn that a diffusion length of base layer acts as a key factor to achieve conversion efficiency higher than 19 %. Further details of simulation parameters and their effects to cell characteristics are discussed in this paper.

• 미생물학회지
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• 제32권1호
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• pp.20-27
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• 1994

항생물질에 대한 다중 저항성을 갖는 Staphylococcus aureus 균주의 chromosomal DNA로부터 유발성 발현을 하는 ${\beta}$-lactamase(bla) 유전자를 확인, 분리하였다. Cloning에 이어 결정된 염기서열을, S. aureus 에서는 지금까지는 plasmid상에서만 분리, 보고되어 있는 bla 유전자들의 염기서열과 비교하였다. 본 bla 유전자의 구조유전자 부분인 843base의 염기서열은 기 발표된 pPC1, pl258, pS1, pI1071, pUB101, pl3796 및 pI3804 유래의 bla 유전자들 중 pPC1, pI258 및 pS1상에 존재하는 bla 구조유전자의 염기서열과 완전히 일치하였고 나머지 것들과도 매우 높은 상동성(99%)을 유지하고 있었다. Bla구조 유전자의 상류 370base 및 하류 220base까지 결정된 염기서열을 비교한 결과에서는 다른 모든 bla구조유전자의 상류 150base에 위치하는 HindIII 인식부위가 약 230base 이상 더 윗쪽으로 옮겨가 있었고 이 HindIII 인식부위를 포함하는 염기서열에서 ORF의 C말단이 발견되었다. 하류 서열에서는 pI1071 유래 bla가 갖는 두개의 직접반복 염기서열 중 하나가 결손된 형태를 보이고 있다. 구조 유전자 상류에 존재하는, 80개 아미노산으로 구성된 ORF의 상동성 검색 결과 Tn4001 의 transposase 의 C 말단과 일치함이 발견되었다.

• Smart Structures and Systems
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• 제22권4호
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• pp.383-397
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• 2018

Traditional base isolation systems focus on isolating the seismic response of a structure in the horizontal direction. However, in regions where the vertical earthquake excitation is significant (such as near-fault region), a traditional base-isolated building exhibits a significant vertical vibration. To eliminate this shortcoming, a rocking-isolated system named Telescopic Column (TC) is proposed in this paper. Detailed rocking and isolation mechanism of the TC system is presented. The seismic performance of the TC is compared with the traditional elastomeric bearing (EB) and friction pendulum (FP) base-isolated systems. A 4-storey reinforced concrete moment-resisting frame (RC-MRF) is selected as the reference superstructure. The seismic response of the reference superstructure in terms of column axial forces, base shears, floor accelerations, inter-storey drift ratios (IDR) and collapse margin ratios (CMRs) are evaluated using OpenSees. The results of the nonlinear dynamic analysis subjected to multi-directional earthquake excitations show that the superstructure equipped with the newly proposed TC is more resilient and exhibits a superior response with higher margin of safety against collapse when compared with the same superstructure with the traditional base-isolation (BI) system.