• ETRI Journal
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• 제15권3_4호
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• pp.61-69
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• 1994

A new analytical model for the base current of Si/SiGe/Si heterojunction bipolar transistors(HBTs) has been developed. This model includes the hole injection current from the base to the emitter, and the recombination components in the space charge region(SCR) and the neutral base. Distinctly different from other models, this model includes the following effects on each base current component by using the boundary condition of the excess minority carrier concentration at SCR boundaries: the first is the effect of the parasitic potential barrier which is formed at the Si/SiGe collector-base heterojunction due to the dopant outdiffusion from the SiGe base to the adjacent Si collector, and the second is the Ge composition grading effect. The effectiveness of this model is confirmed by comparing the calculated result with the measured plot of the base current vs. the collector-base bias voltage for the ungraded HBT. The decreasing base current with the increasing the collector-base reverse bias voltage is successfully explained by this model without assuming the short-lifetime region close to the SiGe/Si collector-base junction, where a complete absence of dislocations is confirmed by transmission electron microscopy (TEM)[1].The recombination component in the neutral base region is shown to dominate other components even for HBTs with a thin base, due to the increased carrier storage in the vicinity of the parasitic potential barrier at collector-base heterojunction.

• 전자공학회논문지A
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• 제31A권8호
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• pp.46-52
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• 1994

DC and AC current crowding effects for microwave and high speed bipolar transistors are investigated in detail using a new and accurate measurement technique based on Z-parameter equationa. Using the new measurement technique dc and ac current crowding effects have been explained clearly in bipolar junction transistors. To model ac crowding effects a capacitive element defined as base capacitance (C$_b$), called ac crowding capacitance is added to base resistance in parallel thereby treating the base resistance(R$_b$) as base impedance Z$_b$. It is shown that base resistance decreases with increasing collector current due to dc current crowding and approaches to a certain limited value at high collector current due to current crowding and approaches to a certain limited value at high collector currents regardless of the emitter size. It is also observed that due to ac current crowding base capacitance increases with increasing collector current. To quantigy the ac crowding effects for SPICE circuit simulation the base capacitance(C$_b$) including the base depletion and diffusion components has been modeled with an analytical expression form.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2005년도 춘계학술대회 논문집
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• pp.1788-1792
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• 2005

Eddy current sensor is representative instrument measuring gap to base metal and sensing trouble in base metal. The existing eddy current sensor works as measuring variance of sensor coil's inductance. But, sensor coil have phenomenon that not only inductance but also real resistance varies in real action. Conductivity and Permeability are main variable in sensor coil's varying impedance(inductance, real resistance). By searching relationship between conductivity-permeability and sensor coil's impedance, eddy current sensor gain advantage of elevation of accuracy, removal of alignment to each base metal, and continuous sensing to varying base metal.

• Earthquakes and Structures
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• 제11권6호
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• pp.1077-1099
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• 2016

One of the main shortcomings in the current passive base isolation system is lack of adaptability. The recent research and development of a novel adaptive seismic isolator based on magnetorheological elastomer (MRE) material has created an opportunity to add adaptability to base isolation systems for civil structures. The new MRE based base isolator is able to significantly alter its shear modulus or lateral stiffness with the applied magnetic field or electric current, which makes it a competitive candidate to develop an adaptive base isolation system. This paper aims at exploring suitable control algorithms for such adaptive base isolation system by developing a close-loop semi-active control system for a building structure equipped with MRE base isolators. The MRE base isolator is simulated by a numerical model derived from experimental characterization based on the Bouc-Wen Model, which is able to describe the force-displacement response of the device accurately. The parameters of Bouc-Wen Model such as the stiffness and the damping coefficients are described as functions of the applied current. The state-space model is built by analyzing the dynamic property of the structure embedded with MRE base isolators. A Lyapunov-based controller is designed to adaptively vary the current applied to MRE base isolator to suppress the quake-induced vibrations. The proposed control method is applied to a widely used benchmark base-isolated structure by numerical simulation. The performance of the adaptive base isolation system was evaluated through comparison with optimal passive base isolation system and a passive base isolation system with optimized base shear. It is concluded that the adaptive base isolation system with proposed Lyapunov-based semi-active control surpasses the performance of other two passive systems in protecting the civil structures under seismic events.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제50권2호
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• pp.57-59
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• 2001

We investigated the maximum controllable current characteristics of the CB-BRT (Corrugated p-Base-Base Resistance Controlled Thyristor), which suppresses the snap-back effectively and increases the maximum controllable current(MCC) by employing the corrugated p-base. Experimental result shows that, when compared with conventional BRT, the MCC of the CB-BRT exhibits good stability on various process parameters. The MCC of the CB-BRT is larger than that of the conventional BRT by 50%, and the variation of the MCC in CB-BRT, caused by variation of the process parameters, is only 20% of that of the conventional BRT.

• Structural Engineering and Mechanics
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• 제82권4호
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• pp.491-502
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• 2022

A model experiment with a scale of 1:150 has been conducted to investigate the dynamic responses of a freestanding four-column bridge tower subjected to regular wave, random wave and coupled wave-current actions. The base shear forces of the caisson foundation and the dynamic behaviors of the superstructure were measured and analyzed. The comparisons of the test values with the theoretical values shows that wave-induced base shear forces on the bridge caisson foundation can be approximated by using a wave force calculation method in which the structure is assumed to be fixed and rigid. Although the mean square errors of the base shear forces excited by joint random wave and current actions are approximately equal to those excited by pure random waves, the existence of a forward current increases the forward base shear forces and decreases the backward base shear forces. The tower top displacements excited by wave-currents are similar to those excited by waves, suggesting that a current does not significantly affect the dynamic responses of the superstructure of the bridge tower. The experiment results can be used as a reference for similar engineering design.

• 한국전기전자재료학회논문지
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• 제17권8호
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• pp.799-805
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• 2004

Two dimensional MEDICI simulator is used to study the characteristics of latch-up current of Dual Gate Emitter Switched Thyristor. The simulation is done in terms of the current-voltage characteristics, latch-up current density, ON-voltage drop and electrical property with the variations of p-base impurity concentrations. Compared with the other power devices such as MOS Controlled Cascade Thyristor(MCCT), Conventional Emitter Switched Thyristor(C-EST) and Dual Channel Emitter Switched Thyristor(DC-EST), Dual Gate Emitter Switched Thyristor(DG-EST) shows to have the better electrical characteristics, which is the high latch-up current density and low forward voltage-drop. The proposed DG-EST which has a non-planer p-base structure under the floating $N^+$ emitter indicates to have the better characteristics of latch-up current and breakover voltage.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제48권3호
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• pp.167-172
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• 1999

The device characteristics of the base resistance controlled thyristor with self-align corrugated p-base is demonstrated for the first time with varying the n+ cathode width and the temperature form room temperature to $125^{\circ}C$. The experimental results show that the snap-back in the CB-BRT is significantly suppressed irrespective of the various n+ cathode width and the temperature as compared with that of the conventional BRT. The maximum controllable current of the CB-BRT is uniformly higher when compared with that of the conventional BRT over the temperature range from room temperature to $125^{\circ}C$.

• Journal of Welding and Joining
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• 제19권6호
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• pp.643-651
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• 2001

A new waveform control technique has been developed for suppressing the spatter generation in the repelled transfer mode of high current $CO_2$ welding. Based on the spatters in repelled transfer, a waveform concept of concept was established in a way to drop the welding current to lower level right before the pendant weld drop detatchment so that the explosion force associating with drop detatchment was decreased. There were several variables to be controlled such as the moment of current drop, the base current and the time of retention at the base current. Either at lower base current or at longer retention time, the more instantaneous shot circuits were int개duced and thus the spatter generation rates were increased. With optimizing the control variables, the amount of spatter generated was decreased by about 30%.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.63-66
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• 2000

In this paper, we present the simulation of the heterojunction bipolar transistor with different Emitter-Base junction structures. Our simulation results include effect of setback and graded layer. We prove the emitter efficiency's improvement through setback and graded layer. In 1995, the analytical equations of electric field, electrostatic potential, and junction capacitance for abrupt and linearly graded heterojunctions with or without a setback layer was derived. But setback layer and linearly graded layer's recombination current was considered numerically. Later, recombination current model included setback layer and graded layer will be proposed. New recombination current model also wile include abrupt heterojunction's recombination current model. In this paper, the material parameters of the heterojunction bipolar transistor with different Emitter-Base junction structures is introduced.