• 한국전기전자재료학회논문지
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• 제15권2호
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• pp.147-152
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• 2002

Carbon nitride thin films were deposited by reactive sputtering for the hard coating materials on Si wafer and tool steels. When the nitrogen content of carbon nitride film on tool steel is 33.4%, the mean hardness and elastic modulus are 49.34 GPa and 307.2 GPa respectively. The nitrided or carburised surface acts as the diffusion barrier which shows better adhesion of carbon nitride thin film on the steel surface. To prevent nitrogen diffusion from the film, steel substrate can be saturated by nitrogen forming a Fe$_3$N layer. The desirable structure at the surface after carburising is martensite, but sometimes, due to high carbon content an proeutectoid Fe$_3$C structure may form at the grain boundaries, leaving the overall surface brittle and may cause defects.

• The Korean Journal of Ceramics
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• 제3권1호
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• pp.34-36
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• 1997

We have fabricated a patterned diamond field emitter on a silicon substrate. Fine diamond particles were planted on a silicon wafer using conventional scratch method. A silicon oxide film was deposited on the substrate seeded with diamond powder. An array of holes was patterned on the silicon oxide film using VLSI processing technology. Diamond grains were grown using a microwave plasma-assisted chemical vapor deposition. Because diamond could not grow on the silicon oxide barrier, diamond grains filled only the patterned holes in the silicon oxide film, resulting in an array of diamond tips.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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• pp.593-596
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• 2007

A possibility of manufacturing bendable ac-PDP using aluminum electrode with anodic aluminum oxide dielectric material system on PET film substrate was explored. For this structure, PET film with fence-structured aluminum electrodes was used for front plate and PET film with barrier ribs of UV curable resin for the rear plate. The results demonstrate that it is feasible to manufacture the bendable ac-PDPs using those material system and are expected to expand the applications of plasma display panels.

• E2M - 전기 전자와 첨단 소재
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• 제10권6호
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• pp.570-575
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• 1997

In this days, the thinner film of dielectric materials is required while its capacitance is required to be still large at the VLSI process. Most of such VLSI have MOS structures. For the research on this requirement, MOS capacitors were fabricated on the silicon wafer in four different thickness groups by RF sputtering method. SiO of the SiO/TiN film is used as the insulating layer and TiN is chosen as the barrier against the diffusion of Al which is the terminal connected by ohmic contact because TiN has the advantageous properties such as good thermal stability and very low diffusion rate in spite of its relatively low specific resistance. In this study their electrical and optical characteristics are investigated to find refractive index, absorption coefficient and Permittivity.

• 한국포장학회지
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• 제26권3호
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• pp.125-131
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• 2020

Carrageenan-based functional films were prepared by adding two different types of sulfur nanoparticles (SNP) synthesized from sodium thiosulfate (SNPSTS) and elemental sulfur (SNPES). The films were characterized using Fourier transform infrared spectroscopy (FT-IR), X-ray diffraction spectroscopy (XRD), and thermal gravimetric analysis (TGA). Also, film properties such as UV-visible light transmittance, water contact angle (WCA), water vapor permeability (WVP), mechanical properties, and antibacterial activity were evaluated. SNPs were uniformly dispersed in the carrageenan matrix to form flexible films. The addition of SNP significantly increased the film properties such as water vapor barrier and surface hydrophobicity but did not affect the mechanical properties. The carrageenan/SNP composite film showed some antibacterial activity against foodborne pathogenic bacteria, L. monocytogenes and E. coli.

• 한국재료학회지
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• 제29권7호
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• pp.408-411
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• 2019

ZTO/n-Si thin film is produced to investigate tunneling phenomena by interface characteristics by the depletion layer. For diversity of the depletion layer, the thin film of ZTO is heat treated after deposition, and the gpolarization is found to change depending on the heat treatment temperature and capacitance. The higher the heat treatment temperature is, the higher the capacitance is, because more charges are formed, the highest at $150^{\circ}C$. The capacitance decreases at $200^{\circ}C$ ZTO heat treated at $150^{\circ}C$ shows tunneling phenomena, with low non-resistance and reduced charge concentration. When the carrier concentration is low and the resistance is low, the depletion layer has an increased potential barrier, which results in a tunneling phenomenon, which results in an increase in current. However, the ZTO thin film with high charge or high resistance shows a Schottky junction feature. The reason for the great capacitance increase is the increased current due to tunneling in the depletion layer.

• 한국정보통신학회논문지
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• 제19권11호
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• pp.2643-2648
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• 2015

본 연구에서는 비대칭 이중게이트 MOSFET의 채널 내 도핑농도분포에 대한 드레인유도장벽감소(Drain Induced Barrier Lowering; DIBL)에 대하여 분석하고자한다. DIBL은 드레인 전압에 의하여 소스 측 전위장벽이 낮아지는 효과로서 중요한 단채널 효과이다. 이를 분석하기 위하여 포아송방정식을 이용하여 해석학적 전위분포를 구하였으며 전위분포에 영향을 미치는 채널도핑농도의 분포함수변화에 대하여 DIBL을 관찰하였다. 채널길이, 채널두께, 상하단 게이트 산화막 두께, 하단 게이트 전압 등을 파라미터로 하여 DIBL을 관찰하였다. 결과적으로 DIBL은 채널도핑 농도분포함수의 변수인 이온주입범위 및 분포편차에 변화를 나타냈다. 특히 두 변수에 대한 DIBL의 변화는 최대채널도핑농도가 $10^{18}/cm^3$ 정도로 고도핑 되었을 경우 더욱 현저히 나타나고 있었다. 채널길이가 감소할수록 그리고 채널두께가 증가할수록 DIBL은 증가하였으며 하단 게이트 전압과 상하단게이트 산화막 두께가 증가할수록 DIBL은 증가하였다.

• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2001년도 The IMAPS-Korea Workshop 2001 Emerging Technology on packaging
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• pp.100-103
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• 2001

본 연구에서는 무전해도금으로 증착된 구리박막의 열적 및 접착특성에 관하여 고찰하였다. Si 기판에 MOCVD 방법으로 TaN 확산방지막을 증착한 후, 무전해 도금으로 구리박막을 증착하여 Cu/TaN/Si 다층구조를 제조공정하였다. 그리고, Ar 분위기에서 열처리시켰으며, 열처리온도에 따른 비저항 변화를 고찰함으로서 Cu/TaN/Si 계의 열적 특성을 분석하였다. 무전해도금 구리박막의 접착특성은 스크래치 테스트에 의해 평가하였으며, 열적 증착방법과 스퍼터 방법으로 증착된 구리 박막과 비교하였다. 스크래치 테스트 결과, 무전해도금 구리 박막의 접착력이 열적 증착과 스퍼터 방법으로 증착된 구리 박막보다 더 우수하였다.

• 한국재료학회지
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• 제10권1호
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• pp.29-33
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• 2000

비정질 WNx 박막이 반응성 스퍼터링법으로 제조되었다. 비정질 형성을 위한 질소의 농도범위는 10~40at%이었다. 비정질 W(sub)67N(sub)33 박막은 1273K에서 1분 동안 급속 열처리되어 저항이 낮은 등축정의 $\alpha$-텅스텐 상과 과잉의 질소로 변태되었다. 이러한 박막의 저항은 순수한 텅스텐 박막과 유사하였다. $\alpha$-텅스텐 상으로부터 방출된 과잉의 질소는 $\alpha$-텅스텐/다결정 실리콘의 계면에 편석되었다. 편석된 질소는 Si$_3$N$_4$나노 결정으로 균일한 확산 장벽층을 형성시켰고, 저항이 높은 텅스텐 실리사이드의 반응을 억제하였다.

• 연구논문집
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• 통권27호
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• pp.183-200
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• 1997

We have calculated the energy of three distinct grain configurations, namely completely connected, partially connected and unconnected configurations, evolving during a spheroidization of polycrystalline thin film by extending a geometrical model due to Miller et al. to the case of spheroidization at both the surface and film-substrate interface. "Stabilitl" diagram defining a stable region of each grain configuration has been established in terms of the ratio of grain size to film thickness vs. equilibrium wetting or dihedral angles at various interface energy conditions. The occurrence of spheroidization at the film-substrate interface significantly enlarges the stable region of unconnected grain configuration thereby greatly facilitating the occurrence of agglomeration. Complete separation of grain boundary is increasingly difficult with a reduction of equilibrium wetting angle. The condition for the occurrence of agglomeration differs depending on the equilibrium wetting or dihedral angles. The agglomeration occurs, at low equilibrium angles, via partially connected configuration containing stable holes centered at grain boundary vertices, whereas it occurs directly via completely connected configuration at large equilibrium angles except for the case having small surface and/or film-substrate interface energy. The initiation condition of agglomeration is defined by the equilibrium boundary condition between the partially connected and unconnected configurations for the former case, whereas it can, for the latter case, largely deviate from the equilibrium boundary condition between the completely connected and unconnected configurations because of the presence of a finite energy barrier to overcome to reach the unconnected grain configuration.