• Title/Summary/Keyword: Barrier film

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The Design and Hot-firing tests of a Water-cooled High Pressure Sub-scale Combustor (물냉각 고압 축소형 연소기의 설계 및 연소시험)

  • Lee, Kwang-Jin;Kim, Jong-Gyu;Lim, Byoung-Jik;Ahn, Kyu-Bok;Seo, Seong-Hyeon;Han, Yeoung-Min;Choi, Hwan-Seok
    • Journal of the Korean Society of Propulsion Engineers
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    • v.11 no.3
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    • pp.1-6
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    • 2007
  • A 3-tonf-class high pressure sub-scale combustor was designed and manufactured to study the performance improvement of combustor. The combustor consists of a combustion chamber with film cooling, thermal barrier coating and water cooling channels to prevent thermal demage of the hardware and an injector head with 37 coaxial swirl injectors. Hot-firing tests were carried out at the design point with varying flow rate for film cooling. The test result revealed that the increase of film cooling flow rate decreases the combustion performance, but in the cases of similar film cooling flow rates, the combustion performance is dependent on the mixture ratio of main injector excluding the film cooling flow rate.

Characteristics of Defects in SiOx Thin films on Ethylene Terephthalate by High-temperature E-beam Deposition (고온 전자빔 증착에 의한 Ethylene Terephthalate상의 SiOx 박막의 특성 평가)

  • Han Jin-Woo;Kim Young-Hwan;Kim Jong-Hwan;Seo Dae-Shlk;Moon Dae-Gyu
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.19 no.1
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    • pp.71-74
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    • 2006
  • In this paper, we investigated the characterization of silicon oxide(SiOx) thin film on Ethylene Terephthalate(PET) substrates by e-beam deposition for transparent barrier application. The temperature of chamber increases from $30^{\circ}C$ to $110^{\circ}C$, the roughness increase while the Water vapor transmission rate (WVTR) decreases. Under these conditions, the WVTR for PET can be reduced from a level of $0.57 g/m^2/day$ (bare subtrate) to $0.05 g/m^2/day$ after application of a 200-nm-thick $SiO_2$ coating at 110 C. A more efficient way to improve permeation of PET was carried out by using a double side coating of a 5-${\mu}m$-thick parylene film. It was found that the WVTR can be reduced to a level of $-0.2 g/m^2/day$. The double side parylene coating on PET could contribute to the lower stress of oxide film, which greatly improves the WVTR data. These results indicates that the $SiO_2$ /Parylene/PET barrier coatings have high potential for flexible organic light-emitting diode(OLED) applications.

Layer-by-layer assembled graphene oxide films and barrier properties of thermally reduced graphene oxide membranes

  • Kim, Seon-Guk;Park, Ok-Kyung;Lee, Joong Hee;Ku, Bon-Cheol
    • Carbon letters
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    • v.14 no.4
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    • pp.247-250
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    • 2013
  • In this study, we present a facile method of fabricating graphene oxide (GO) films on the surface of polyimide (PI) via layer-by-layer (LBL) assembly of charged GO. The positively charged amino-phenyl functionalized GO (APGO) is alternatively complexed with the negatively charged GO through an electrostatic LBL assembly process. Furthermore, we investigated the water vapor transmission rate and oxygen transmission rate of the prepared (reduced GO $[rGO]/rAPGO)_{10}$ deposited PI film (rGO/rAPGO/PI) and pure PI film. The water vapor transmission rate of the GO and APGO-coated PI composite film was increased due to the intrinsically hydrophilic property of the charged composite films. However, the oxygen transmission rate was decreased from 220 to 78 $cm^3/m^2{\cdot}day{\cdot}atm$, due to the barrier effect of the graphene films on the PI surface. Since the proposed method allows for large-scale production of graphene films, it is considered to have potential for utilization in various applications.

Effects of Concentration of ZnO Nanoparticles on Mechanical, Optical, Thermal, and Antimicrobial Properties of Gelatin/ZnO Nanocomposite Films

  • Shankar, Shiv;Teng, Xinnan;Rhim, Jong-Whan
    • KOREAN JOURNAL OF PACKAGING SCIENCE & TECHNOLOGY
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    • v.20 no.2
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    • pp.41-49
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    • 2014
  • This study illustrates the synthesis of gelatin based zinc oxide nanoparticle (ZnONPs) incorporated nanocomposite films using different concentrations of ZnONPs. The ZnONPs were oval in shape and the size ranged from 100- 200 nm. The nanocomposite films were characterized by UV-visible, FE-SEM, FT-IR, and XRD. The concentrations of ZnONPs greatly influenced the properties of nanocomposite films. The absorption peaks around 360 nm increased with the increasing concentrations of ZnONPs. The surface color of film did not change while transmittance at 280 nm was greatly reduced with increase in the concentration of ZnONPs. FTIR spectra showed the interaction of ZnONPs with gelatin. XRD data demonstrated the crystalline nature of ZnONPs. The thermostability, char content, water contact angle, water vapor permeability, moisture content, and elongation at break of nanocomposite films increased, whereas, tensile strength and modulus decreased with increase in the concentrations of ZnONPs. The gelatin/ZnONPs nanocomposite films showed profound antibacterial activity against both Gram-positive and Gram-negative food-borne pathogenic bacteria. The gelatin/$ZnONP^{1.5}$ nanocomposite film showed the best UV barrier and antimicrobial properties among the tested-films, which indicated a high potential for use as an active food packaging films with environmentally-friendly nature.

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Diffusion barrier characteristics of molybdenum nitride films for ultra-large-scale-integrated Cu metallization (I); Surface morphologies and characteristics of sputtered molybdenum nitride films

  • Jeon, Seok-Ryong;Lee, You-Kee;Park, Jong-Wan
    • Journal of Korean Vacuum Science & Technology
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    • v.1 no.1
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    • pp.24-29
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    • 1997
  • Surface morphologies and fundamental characteristics of molybdenum nitride films deposited by reactive dc magnetron sputtering were studied for application to Cu diffusion barrier. A phase transformation from Mo to $\gamma$-Mo$_2$N phase at 0.5$N_2$ flow ratio.($N_2$/(Ar+$N_2$)) equal to and larger than 0.2, whereas a second phase transformation to $\gamma$-MoN phase at 0.5 N2 flow ratio, With the variation of the N2 ratio the surface morphologies of the films were generally smooth except the cases of 0.2 and 0.3$N_2$ gas rations, where build-up of film stresses occurred. $\gamma$-Mo$_2$N film was found to crystallize at the deposition temperature of 40$0^{\circ}C$. The surfaces of $\gamma$-Mo$_2$N films deposited up to 40$0^{\circ}C$ were smooth, but the film deposited at 50$0^{\circ}C$ had very rough surface morphology. It seems that this was due to the building-up of thermal stresses at the high deposition temperature, which might lead to hillock formation.

Control of the Gold Electrode Work Function for High Performance Organic Thin Film Transistors (표면개질된 금 전극의 일함수 조절을 통한 고성능 유기박막 트랜지스터 개발)

  • Park, Yeong Don
    • Applied Chemistry for Engineering
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    • v.23 no.3
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    • pp.289-292
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    • 2012
  • Au electrodes modified with self-assembled monolayers (SAMs) were used to control the work function of source/drain electrodes in triethylsilylethynyl anthradithiophene (TES ADT)-based organic thin film transistors (OTFTs). By using benzothiol (BT) and pentafluorobenzothiol (PFBT) SAMs, the hole injection barrier between Au and the highest occupied molecular orbital (HOMO) of TES ADT was controlled. After a solvent annealing, TES ADT OTFTs with PFBT SAM-treated Au electrodes were found to exhibit high field-effect mobilities of $0.05\;cm^2/Vs$ and on/off current ratios of $10^6$.

A Study on Cu(B)/Ti/SiO2/Si Structure for Application to Advanced Manufacturing Process (차세대 공정에 적용 가능한 Cu(B)/Ti/SiO2/Si 구조 연구)

  • Lee Seob;Lee Jaegab
    • Korean Journal of Materials Research
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    • v.14 no.4
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    • pp.246-250
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    • 2004
  • We have investigated the effects of boron added to Cu film on the Cu-Ti reaction and microstructural evolution of Cu(B) alloy film during annealing of Cu(B)/Ti/$SiO_2$/Si structure. The result were compared with those of Cu(B)/$SiO_2$ structure to identify the effects of Ti glue layers on the Boron behavior and the result grain growth of Cu(B) alloy. The vacuum annealing of Cu(B)/Ti/$SiO_2$ multilayer structure allowed the diffusion of B to the Ti surface and forming $TiB_2$ compounds at the interface. The formed $TiB_2$ can act as a excellent diffusion barrier against Cu-Ti interdiffusion up to $800^{\circ}C$. Also, the resistivity was decreased to $2.3\mu$$\Omega$-cm after annealing at $800^{\circ}C$. In addition, the presence of Ti underlayer promoted the growth Cu(l11)-oriented grains and allowed for normal growth of Cu(B) film. This is in contrast with abnormal growth of randomly oriented Cu grains occurring in Cu(B)/$SiO_2$ upon annealing. The Cu(B)/Ti/$SiO_2$ structure can be implemented as an advanced metallization because it exhibits the low resistivity, high thermal stability and excellent diffusion barrier property.

Inorganic Thin Film Passivation Layer Fabricated by Plasma Enhanced Chemical Vapor Deposition

  • Lee, Bum-Hee;Park, Dong-Hee;Jin, Chang-Kyu;Kim, Tae-Hwan;Choi, Won-Kook
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.516-516
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    • 2013
  • Flexible Display를 제작하기 위해서는 유기소자를 보호하는 보호막이 필요하다. 유기소자는 산소 및 수분에 매우 취약하기 때문에 장수명을 확보하기 위해서는 추가적인 보호층이 필요하다. 본 논문에서는 이를 위해 Encapsulation 중 한 방법인 Barrier Film을 제작하고 그에 따른 광학적인 특성 및 수분 투습율을 조사하였다. Barrier film의 광학적 분석 방법으로는 XPS, SEM, AFM, Transmittance를 측정하였으며, XPS는 박막내의 화학적인 결합을 알기 위해서 사용되었고, SEM은 박막의 두께 및 박막내의 결함을 파악하고자 하였다. SEM을 통해 증착속도가 32.6 nm/m이라는 것을 관찰할 수 있었다. AFM을 통해 증착된 박막의 표면 거칠기를 파악하였다. Transmittance는 PET 기판을 사용하여 가시광 영역에서 80%이상의 투과도를 나타내었다. PECVD 장비를 사용하여 SiH4, NH3, N2가스를 사용하여 PET 필름 위에 박막을 증착하였으며, 유량을 10~400 sccm 내에서 변화시키고, RF Power는 각각 30~300 W 15분간 증착하였다. 제작된 보호막의 수분투습율은 $2{\times}10{_2}^{-2}g/m^2/day$ 이하의 값을 나타내었다.

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Fabrication of the alumina membrane with nano-sized pore array using the thin film aluminum (박막 알루미늄을 이용한 나노미터 크기의 미세기공 형성)

  • Lee, Byoung-Wook;Lee, Jae-Hong;Lee, Eui-Sik;Kim, Chang-Kyu
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.07a
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    • pp.120-122
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    • 2005
  • An alumina membrane with nano-sized pore array by anodic oxidation using thin film aluminum deposited on silicon wafer was fabricated. It is important that the sample prepared by metal deposition method has a flat aluminum surface and a good adhesion between the silicon wafer and the thin film aluminum. The oxidation time was controlled by observation of current variation. While the oxalic acid with 0.2M was used for low voltage anodization under 100V, the chromic acid with 0.1M was used for high voltage anodization over 100V. The nano-sized pores with diameter of 60~120nm was obtained by low voltage anodization of 40~90V and those of 200~300nm was obtained by high voltage anodization of 120~160V. Finally, the sample was immersed to the phosphoric acid with 0.1M concentration to etching the barrier layer. The sample will be applied to electronic sensors, field emission display, and template for nano-structure.

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