• Journal of the Korean Ceramic Society
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• v.40 no.1
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• pp.5-10
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• 2003

Porous barium-strontium titanate ceramics were fabricated by adding corn- or potato-starch (are referred to as starch). The effect of sintering temperature on the microstructure and electrical properties of the porous ceramics was investigated. The room-temperature electrical resistivity of the barium-strontium titanate ceramics decreased with sintering temperature. The porosity and pore size were decreased and the grain size was increased with increasing the sintering temperature. The porosity and grain size of the barium-strontium titanate ceramics with corn-starch sintered at 1300 and 1450$^{\circ}C$ were 28.5, 22.6% and 3.2, 6.2 $\mu\textrm{m}$, respectively. The average pore sizes of the barium-strontium titanate ceramics with corn-starch sintered at 1300, 1400 and 1450$^{\circ}C$ were 0.5, 0.3 and 0.2 $\mu\textrm{m}$, respectively. The decrease in the room-temperature resistivity with increasing sintering temperature is attributed mainly due to the increase of grain size and the decrease of the electrical barrier height of grain boundaries as well as the partial decrease of porosity.

• Journal of the Korean Chemical Society
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• v.7 no.4
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• pp.254-256
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• 1963

A spectrochemical analysis was made to compare the major impurities in $BaTiO_3$ single crystals grown from $KF-BaTiO_3$ system and $TiO_2-BaTiO_3$ system respectively. The present technique was also extended, without any modifications, to the analysis of $SrTiO_3$ crystal.

• Proceedings of the Korea Crystallographic Association Conference
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• 2002.11a
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• pp.19-19
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• 2002

Perovskite-type titanate dielectrics have attracted much attention in memory devices such as DRAMs or FeRAMs due to their high dielectric constants. However, low volatility of the Ba, Sr, Pb or Zr precursors with only thd ligands has limitations in obtaining high quality thin films by liquid source metal organic chemical vapor deposition (LS-MOCVD) processes. To improve the volatility of these precursors, many attempts have been made such as adding polyether ligands to satisfy the coordinative saturation. We report the synthesis of new precursors Ba(thd)₂(tmeea) and Sr(thd)₂(tmeea), where tmeea = tris[2-(2-methoxyethoxy)ethyl]amino, and LS-MOCVD of barium strontium titanate (BSTO) thin films using these precursors. Due to increased basicity of amines compared with ethers, it is expected that the nitrogen-donor ligand will make a strong bond to a metal than an analogous oxygen-donor ligand, consequently improving the volatility and thermal behavior of these precursors. Thin films of BSTO were grown on Pt(111)/SiO₂/Si(100) substrates by LS-MOCVD using a cocktail source consisting of the conventional Ti precursor Ti(thd)₂(O/sup i/Pr), and these new Ba and Sr precursors. As-grown films were characterized by XPS, SEM, XRD, XRF, and C-V and I-V measurements. BSTO films grown at 420℃ were stoichiometric barium strontium titanate with very smooth surface morphology and their dielectric constants were found to be as targe as 450. Dependence of the composition, microstructure and the electrical properties of the BSTO films on the growth temperature, annealing temperature, working pressure, and the composition of the cocktail source will be discussed.

• Bulletin of the Korean Chemical Society
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• v.16 no.12
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• pp.1180-1184
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• 1995

The precursors of Ba1-xSrxTiO3(x=0.0-0.3) were prepared by the rapid addition of aqueous solution of titanyl oxalate to the mixed aqueous solution of barium and strontium at room temperature. The optimum pH was theoretically calculated from the equilibrium constants and solubility products. The chemical formula of the precursors obtained corresponded to Ba1-xSrxTiO(C2O4)2·4H2O(x=0.0-0.3) as determined by thermal gravimetric analysis. The precursors were converted to stoichiometric Ba1-xSrxTiO3(x=0.0-0.3) with a particle size of 0.01-0.04 μm. As increasing the amount of strontium substituted to barium sites, the structure of crystal changed from the tetragonal phase to the cubic and the unit cell volume was decreased.

• Electrical & Electronic Materials
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• v.9 no.4
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• pp.336-343
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• 1996

We have studied the preparation and the properties of $Ba_{1-x}$Sr$_{x}$TiO$_{3}$(BST) thin films by using the sol-gel method. Through the comparison of the effects of various solvents and additives in making solutions, we establish the production method of the stable solution which generates the high quality of BST film. We also set up the heat-treatment conditions for depositing the BST thin film through the TGA and XRD analyses. Through the comparison of the surface conditions of BST films deposited on Pt/Ta/SiO$_{2}$/Si and Pt/Ti/SiO$_{2}$/Si substrates, we find that Ta is more efficient diffusion barrier of Si than Ti so that Ta layer prevents the formation of hillocks. We fabricate the planar type capacitor and measure the dielectric properties of the BST thin film deposited on the Pt/Ta/SiO$_{2}$/Si substrate. Dielectric constant and dielectric loss tangent at 1V, 10kHz, and leakage current density at 3V of the BST thin film are 339, 0.052 and 13.3.mu.A/cm$^{2}$, respectively.ely.

• Journal of information and communication convergence engineering
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• v.1 no.2
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• pp.70-73
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• 2003

We have studied the effects of solvents and additives in the precursor solutions on the characteristics of barium strontium titanate (BST) thin films. The solution having two solvents, ie. acetic acid for barium acetate and strontium acetate and 2-methoxyethanol for titanium isopropoxide and also having an additive of ethylene glycol shows good stability and remains homogeneous even after a month of ageing. It produces excellent BST thin film without cracks. Dielectric constant, loss tangent at 10KHz and leakage current density at 3V of the BST (70/30) thin film made from this solution are 339, 0.052 and 13.3 ${\mu}\textrm{A}$/$\texmrm{cm}^2$, respectively.

• Bulletin of the Korean Chemical Society
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• v.32 no.1
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• pp.141-144
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• 2011

We report the synthesis of $SrTiO_3$, $BaTiO_3$ and $Ba_xSr_{1-x}TiO_3$ (BST) nanoparticles (NPs) in various compositions (x = 0.25, 0.5 and 0.75) by an inorganic sol-gel method under a basic condition. Highly crystalline nanoparticles were formed at the reaction temperature of 25 - $100^{\circ}C$ from a stabilized titanium alkoxide in tetramethylammonium hydroxide (TMAH) and barium or strontium acetate in aqueous solution. Morphology and particle structure of the synthesized BST NPs were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) and transmission electron microscopy (TEM). The BST nanoparticles in various compositions were monodispersed without mutual aggregation, and their average sizes were in the range of 70 - 80 nm. Furthermore, they showed highly crystallized perovskite phase over the whole composition range from $SrTiO_3$ to $BaTiO_3$. We also proposed a mechanism for the low-temperature formation of BST NPs.

• Journal of Korean Vacuum Science & Technology
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• v.4 no.4
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• pp.97-101
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• 2000

In this study, two kinds of barium strontium titanate (BST) samples were prepared. One is a conventional BST film that is sputtered in a mixture of argon and oxygen. The other is a nitrogen-incorporated BST film that is sputtered in a mixture of oxygen and intentionally added nitrogen instead of argon gas. The structural properties of both of the BST films had not changed significantly with the species of sputtering gas. However, the leakage current of BST films sputtered at ($N_2$+O$_2$) atmosphere was lower than those sputtered at (Ar +O$_2$) atmosphere: 1.9$\times$10$^{-8}$ A/cm$^2$ at 2V for the films prepared at (Ar +O$_2$) atmosphere and 8.6$\times$10$^{-9}$ A/cm$^2$ for the films at ($N_2$+O$_2$) atmosphere. From an XPS analysis, it has been found that nitrogen atoms are incorporated in BST films with a concentration of 1.92 at% and form a certain oxynitride phase. It is proposed that nitrogen atoms are able to fill the oxygen vacancies of BST films during sputtering process, and then the leakage current reduces due to a decrease in the vacancies. The BST films sputtered at ($N_2$+O$_2$) atmosphere have superior electrical properties to the films sputtered at (Ar +O$_2$), without any significant structural changes.

• Korean Journal of Materials Research
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• v.14 no.2
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• pp.115-120
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• 2004

Perovskite barium-strontium titanate, $(Ba, Sr)TiO_3$ was prepared and effects of $Sb_2$O$_3$ additives on its PTCR properties were investigated. $The (Ba,Sr)TiO_3$ with 0.05～0.25 mol% $Sb_2$$O_3$ showed semiconducting PTCR behavior and anomalous grain growth was also observed when it was sintered above $1330^{\circ}C$. It was considered that charge compensation by doping 8b203 as well as abnormal grain growth by sintering lead to resistivity reduction from insulating to semiconducting transition.

• Journal of the Korean Institute of Telematics and Electronics C
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• v.36C no.5
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• pp.27-37
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• 1999

A CMOS ReadOut Integrated Circuit (ROlC) for InfraRed Focal Plane Array (IRFPA) detector is presented, which is a key component in uncooled thermal imaging systems. The ROIC reads out signals from $64\times64$ Barium Strontium Titanate (BST) infrared detector array, then outputs pixel signals sequentially after amplifying and noise filtering. Various design requirements and constraints have been considered including impedance matching, low noise, low power dissipation and small detector pitch. For impedance matching between detector and pre~amplifier, a new circuit based on MOS diode structure is devised, which can be easily implemented using standard CMOS process. Also, tunable low pass filter with single~pole is used to suppress high frequency noise. In additions, a clamping circuit is adopted to enhance the signal~to-noise ratio of the readout output signals. The $64\times64$ IRFPA ROIC is designed using $0.65-\mu\textrm{m}$ 2P3M (double poly, tripple metal) N~Well CMOS process. The core part of the chip contains 62,000 devices including transistors, capacitors and resistors on an area of about $6.3-mm\times6.7-mm$.