• Title/Summary/Keyword: Bare Metal

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Thin Film Battery Using Micro-Well Patterned Titanium Substrates Prepared by Wet Etching Method

  • Nam, Sang-Cheol;Park, Ho-Young;Lim, Young-Chang;Lee, Ki-Chang;Choi, Kyu-Gil;Park, Gi-Back
    • Journal of the Korean Electrochemical Society
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    • v.11 no.2
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    • pp.100-104
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    • 2008
  • Titanium sheet metal substrates used in thin film batteries were wet etched and their surface area was increased in order to increase the discharge capacity and power density of the batteries. To obtain a homogeneous etching pattern, we used a conventional photolithographic process. Homogeneous hemisphere-shaped wells with a diameter of approximately $40\;{\mu}m$ were formed on the surface of the Ti substrate using a photo-etching process with a $20\;{\mu}m{\times}20\;{\mu}m$ square patterned photo mask. All-solid-state thin film cells composed of a Li/Lithium phosphorous oxynitride (Lipon)/$LiCoO_2$ system were fabricated onto the wet etched substrate using a physical vapor deposition method and their performances were compared with those of the cells on a bare substrate. It was found that the discharge capacity of the cells fabricated on wet etched Ti substrate increased by ca. 25% compared to that of the cell fabricated on bare one. High discharge rate was also able to be obtained through the reduction in the internal resistance. However, the cells fabricated on the wet etched substrate exhibited a higher degradation rate with charge-discharge cycling due to the nonuniform step coverage of the thin films, while the cells on the bare substrate demonstrated a good cycling performance.

Lower Hole-injection barrier between pentacene and HDT-modified Gold with lowered workfunction

  • Hong, Ki-Pyo;Lee, Jong-Won;Yang, Sang-Yoon;Shin, Kwon-Woo;Jeon, Ha-Young;Kim, Se-Hyun;Park, Chan-Eon
    • Proceedings of the Polymer Society of Korea Conference
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    • 2006.10a
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    • pp.238-238
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    • 2006
  • Through ultra-violet photoemission spectroscopy in-situ experiment, 0.67 eV energy barrier between 1-hexadecanethiol (HDT)-modified gold and pentacene was observed, which was 0.03 eV smaller than the energy barrier between bare gold and pentacene despite HDT modified gold had 0.8 eV lower work function than that of bare gold. This result is opposed to the idea that increasing the work function a metal decreases the energy barrier. This can be explained by two factors. One is the absence of interface dipole, which is observed in pentacene deposited on gold. The other is reduced ionization energy which can be explained through polarization energy or electronic splitting of molecular orbital with more crystalline structure observed through X-ray diffraction patterns.

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A Study on Solid Particle Erosion Characteristics of Surface Treated 12wt%Cr Steel for USC Power Plant (USC 화력발전소용 12wt%Cr강의 표면처리에 따른 고체입자침식특성에 관한 연구)

  • 엄기원;이선호;이의열
    • Proceedings of the KWS Conference
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    • 2004.05a
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    • pp.324-326
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    • 2004
  • l2wt%Cr Steel has been applied on turbine bucket and nozzle partition material of power plant. Turbine bucket and nozzle get damaged by solid particle within steam, therefore they are protected by surface treatments such as ion nitriding, boriding and chrome carbide HVOF spray coating. In this study, solid particle erosion(SPE) characteristics after these surface treatments are examined at operating temperature 540$^{\circ}C$ and 590$^{\circ}C$ of fossil power plant and the mechanism of damage was studied. Erosion of 12wt%Cr steel is originated by micro cutting and that of boriding and chrome carbide HVOF spray is originated by these mechanism - repeating collision, crack initiation and propagation. As the results of SPE test at 540$^{\circ}C$ and 30$^{\circ}$ impact angle that is the most commonly occurred in power plant, Boriding had the best SPE -resistance property, Cr$_2$C$_3$-25(Ni20Cr) HVOF spayed and ion nitrided samples were also better than bare metals(l2wt%Cr Steels). At 590$^{\circ}C$ and 30$^{\circ}$ impact angle, Boriding had also the most superior characteristic and HVOF spay sample was better than bare metal.

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Ultrathin Titania Coating for High-temperature Stable $SiO_2$/Pt Nanocatalysts

  • Reddy, A. Satyanarayana;Kim, S.;Jeong, H.Y.;Jin, S.;Qadir, K.;Jung, K.;Jung, C.H.;Yun, J.Y.;Cheon, J.Y.;Joo, S.H.;Terasaki, O.;Park, Jeong-Young
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.08a
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    • pp.217-217
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    • 2011
  • Recently, demand for thermally stable metal nanoparticles suitable for chemical reactions at high temperatures has increased to the point to require a solution to nanoparticle coalescence. Thermal stability of metal nanoparticles can be achieved by adopting core-shell models and encapsulating supported metal nanoparticles with mesoporous oxides [1,2]. However, to understand the role of metal-support interactions on catalytic activity and for surface analysis of complex structures, we developed a novel catalyst design by coating an ultra-thin layer of titania on Pt supported silica ($SiO_2/Pt@TiO_2$). This structure provides higher metal dispersion (~52% Pt/silica), high thermal stability (~600$^{\circ}C$) and maximization of the interaction between Pt and titania. The high thermal stability of $SiO_2/Pt@TiO_2$ enabled the investigation of CO oxidation studies at high temperatures, including ignition behavior, which is otherwise not possible on bare Pt nanoparticles due to sintering [3]. It was found that this hybrid catalyst exhibited a lower activation energy for CO oxidation because of the metal-support interaction. The concept of an ultra-thin active metal oxide coating on supported nanoparticles opens-up new avenues for synthesis of various hybrid nanocatalysts with combinations of different metals and oxides to investigate important model reactions at high-temperatures and in industrial reactions.

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Preparation of Ferroelectric $YMnO_3$ Thin Films by Metal-Organic Decomposition Process and their Characterization (Metal-Organic Decomposition법에 의한 강유전성 $YMnO_3$ 박막의 제조 및 특성)

  • 김제헌;강승구;김응수;김유택;심광보
    • Journal of the Korean Ceramic Society
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    • v.37 no.7
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    • pp.665-672
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    • 2000
  • The ferroelectric YMnO3 thin films were prepared by MOD(metal-organic decomposition) method with Y- and Mn-acetylacetonate as starting materials. Thin films were grown on various substrates by spin-coating technique. The crystalline phases of the thin films were identified by X-ray diffractometer as a function of heat-treatment temperature, pH of coating solution and substrate. In addition, the effect of Mn/Y molar ratio(0.8~1.2) on the formation of hexagonal-YMnO3 phase was investigated. In forming highly c-axisoriented hexagonal-YMnO3 single phase, the Pt coated Si substrate was more effective than the bare Si substrate, and the optimum heat-treatment condition was at 82$0^{\circ}C$ for 30 min. Higher Mn/Y molar ratio within 0.8~1.2 and pH of YMnO3 precursor solution within 0.5~2.5 favored formation of ferroelectric hexagonal phase rather than orthorhombic phase. Leakage current density of the hexagonal-YMnO3 thin film formed on Pt(111)/TiO2/SiO2/Si substrate was low enough as 0.4~4.0$\times$10-8(A/$\textrm{cm}^2$) at 5 V and its remanent polarization(Pr), calculated from the P-E hysteresis loop, was 3 nC/$\textrm{cm}^2$.

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Effects of sulfur treatments on metal/InP schottky contact and $Si_3$$N_4$/InP interfaces (황처리가 금속/InP Schootky 접촉과 $Si_3$$N_4$/InP 계면들에 미치는 영향)

  • Her, J.;Lim, H.;Kim, C.H.;Han, I.K.;Lee, J.I.;Kang, K.N.
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.31A no.12
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    • pp.56-63
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    • 1994
  • The effects of sulfur treatments on the barrier heithts of Schottky contacts and the interface-state density of metal-insulator-semiconductor (MIS) capacitors on InP have been investigated. Schottky contacts were formed by the evaporation of Al, Au, and Pt on n-InP substrate before and after (NH$_{4}$)$_{2}$S$_{x}$ treatments, respectively. The barrier height of InP Schottky contacts was measured by their current-voltage (I-V) and capacitance-voltage (C_V) characteristics. We observed that the barrier heights of Schottky contacks on bare InP were 0.35~0.45 eV nearly independent of the metal work function, which is known to be due to the surface Fermi level pinning. In the case of sulfur-treated Au/InP ar Pt/InP Schottky diodes, However, the barrier heights were not only increased above 0.7 eV but also highly dependent on the metal work function. We have also investigated effects of (NH$_{4}$)$_{2}$S$_{x}$ treatments on the distribution of interface states in Si$_{3}$N$_{4}$InP MIS diodes where Si$_{3}$N$_{4}$ was provided by plasma enhanced chemical vapor deposition (PECVD). The typical value of interface-state density extracted feom 1 MHz C-V curve of sulfur-treated SiN$_{x}$/InP MIS diodes was found to be the order of 5${\times}10^{10}cm^{2}eV^{1}$. This value is much lower than that of MiS diodes made on bare InP surface. It is certain, therefore, that the (NH$_{4}$)$_{2}$S$_{x}$ treatment is a very powerful tool to enhance the barrier heights of Au/n-InP and Pt/n-InP Schottky contacts and to reduce the density of interface states in SiN$_{x}$/InP MIS diode.

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Photoelectrochamical characteristics of $WO_3$ on metal substrate for hydrogen production (텅스텐산화물/금속기판의 광전극 특성)

  • Go, GeunHo;Shinde, Pravin S.;Seo, SeonHee;Lee, Dongyoon;Lee, Wonjae
    • 한국신재생에너지학회:학술대회논문집
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    • 2011.11a
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    • pp.99.2-99.2
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    • 2011
  • Transparent conducting oxides (TCOs) supported on glass are widely used as substrates in PEC studies for photovoltaic hydrogen generation applications However, high sheet resistane ($10{\sim}15{\Omega}/cm^2$) and fragileness of glass-supported TCO substrates are the obstacles to produce the large area PEC cells. Such internal sheet resistance is detrimental to efficient collection of photogenerated majority charge carriers at the photoactive material and electrolyte interface. Moreover, these TCO substrates are very expensive and consume about 40~60% cost of the devices. Hence, a low sheet resistance of the substrate is a key point in improving the performance of PEC devices. Metallic substrates coated with a photoactive material would be a good choice for efficient charge collection. Such metal substrates based photanodes are best candidate for large-scale phtoelectrochemical water splitting for hydrogen generation. In this study, we report the enhanced PEC performance of $WO_3$ film on metal(chemical etched, bare) substrate. It is proposed that interface between $WO_3$ and the metal substrate is responsible for efficient charge transfer and demonstrated significant improvement in the photoelectrochmical performance. X-ray diffration and FESEM suduies reveled that $WO_3$ films are monoclinic, porous, polycrystalline with average grain size of ~50nm. Photocurrent of $WO_3$ prepared on metal substrates was measured in 0.5M $H_2SO_4$ electroyte under simulated $100mW/cm^2$ illumination.

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Study on the Property of Sintered Silver Clay for Rapid Modeling (신속 조형용 은점토 소결체의 물성 연구)

  • Kim, Jun-Hwan;Kim, Keum-Jong;Kim, Myung-Ro;Song, Oh-Sung
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.9 no.6
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    • pp.1548-1554
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    • 2008
  • The market of silver precious metal clay (PMC) is promising as its application for agile metal craft. The property of suitable hardness and shrinkage as well as environment-safe is strictly required as people make the final product with bare hands. We propose a silver PMC with new organic binder made of palm oil, glycolic acid and water. Then we prepared disk specimen of our proposed PMC and well-known commercial PMC. We investigated the hardness, weight change, linear shrinkage, density and micro structure evolution with sintering temperature of $700{\sim}900^{\circ}C$ ($50^{\circ}C$ gap) for 15minutes. We confirm our proposed PMC has suitable property for craft product comparable for commercial PMC, and the optimum sintering condition is $850^{\circ}C$-15minutes for metal craft application.

Influence of Charge Transport of Pt-CdSe-Pt Nanodumbbells and Pt Nanoparticles/GaN on Catalytic Activity of CO Oxidation

  • Kim, Sun Mi;Lee, Seon Joo;Kim, Seunghyun;Kwon, Sangku;Yee, Kiju;Song, Hyunjoon;Somorjai, Gabor A.;Park, Jeong Young
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.164-164
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    • 2013
  • Among multicomponent nanostructures, hybrid nanocatalysts consisting of metal nanoparticle-semiconductor junctions offer an interesting platform to study the role of metal-oxide interfaces and hot electron flows in heterogeneous catalysis. In this study, we report that hot carriers generated upon photon absorption significantly impact the catalytic activity of CO oxidation. We found that Pt-CdSe-Pt nanodumbbells exhibited a higher turnover frequency by a factor of two during irradiation by light with energy higher than the bandgap of CdSe, while the turnover rate on bare Pt nanoparticles didn't depend on light irradiation. We also found that Pt nanoparticles deposited on a GaN substrate under light irradiation exhibit changes in catalytic activity of CO oxidation that depends on the type of doping of the GaN. We suppose that hot electrons are generated upon the absorption of photons by the semiconducting nanorods or substrates, whereafter the hot electrons are injected into the Pt nanoparticles, resulting in the change in catalytic activity. We discuss the possible mechanism for how hot carrier flows generated during light irradiation affect the catalytic activity of CO oxidation.

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Sn계 무연 솔더에 관한 연구

  • 이창배;정승부;서창제
    • Proceedings of the International Microelectronics And Packaging Society Conference
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    • 2001.11a
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    • pp.75-87
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    • 2001
  • Three different kinds of substrate used in this study : bare Cu substrate, Ni-P/Cu substrate with a Ni-P layer thickness of $5\mu\textrm{m},$ and Au/Ni-P/Cu substrate with the Ni-P and Au layers of $0.15\mu\textrm{m}$ and $5\mu\textrm{m}$ thickness respectively. The wettability of various Sn-base solders was affected by the substrate metal finish used, i.e., nickel, gold and copper. On the Au/Ni-F/Cu substrate, Sn-base solders wet better than any of the other substrate metal finishes tested. The interfacial reaction between various substrate and Sn-base solder was investigated at $70^{\circ}C,$ $100^{\circ}C,$ $120^{\circ}C,$ $150^{\circ}C,$ $170^{\circ}C$ and $200^{\circ}C$ for reaction times ranging from 0 day to 60 day. Intermetallic phases was formed along a Sn-base solder/ various substrate interface during solid-state aging. The apparent activation energy for growth of Sn-Ag/Cu, Sn-Ag-Bi/Cu, and Sn-Bi/Cu couples were 65.4, 88.6, and 127.9 Kj/mol, respectively. After isothermal aging, the fracture surface shoved various characteristics depending on aging temperature and time, and the types of BGA pad.

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