• Carbon letters
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• v.6 no.2
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• pp.96-100
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• 2005

Taguchi methodology has been applied to get an idea about the parameters related to the chemical vapour deposition technique, which influences the formation of semiconducting carbon thin film of a desired band gap. L9 orthogonal array was used for this purpose. The analysis based on Taguchi methodology suggests that amongst the parameters selected, the temperature of pyrolysis significantly controls the magnitude of band gap (46%). Sintering time has a small influence (30%) on the band gap formation and other factors have almost no influence on the band gap formation. Moreover this analysis suggests that lower temperature of pyrolysis (${\leq}$ $750^{\circ}C$) and lower time of sintering (${\leq}$ 1 h) should be preferred to get carbon thin film with the desired band gap of 1.2eV.

• Bulletin of the Korean Chemical Society
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• v.35 no.3
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• pp.895-898
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• 2014

The wavelength dependence of the photoacoustic signal for n-type GaAs semiconductors in the region of the band-gap energies was investigated. The significant changes in the phase and amplitude of the photoacoustic signal near the band-gap absorption wavelengths were observed to occur when the Si-doping densities in GaAs were varied. Particularly, the first derivatives of the photoacoustic phase vs. wavelength graphs were evaluated and fitted with single Gaussian functions. The peak centers and the widths of the Gaussian curves clearly showed linear relationships with the log values of the Si-doping densities in n-type GaAs semiconductors. It is proposed that the wavelength-dependent PA spectroscopy can be used as a simple and nondestructive method for measuring the doping densities in bulk semiconductors.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.43 no.3
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• pp.420-431
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• 1994

The HgCdTe material, which is II-VI compound semiconductor, is important materials for the fabrication of the infrared detectros. To suggest the model of accurate MIS C-V calculation for narrow band gap semiconductors such as HgCdTe, non-parabolicity from k.p theory and degeneracy effect are considered. And partially ionized effect and compensation effect which are material's properties are also considerd. Especially, degenerated material C-V characteristics from Fermi-Dirac statistics and exact charge theory are presented to get more accurate analysis of the experimental results. Also the comparison with calculation results between the general MIS theory from Boltzmann appoximation method and this model which is considered the narrow band gap semiconductor properties, show that this model is more useful theory to determination of accurate low and high frequency C-V characteristics.

• Journal of the Korean Ceramic Society
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• v.47 no.4
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• pp.353-356
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• 2010

Zinc oxide (ZnO) thin films were deposited using atomic layer deposition. The electrical and optical properties were characterized using Hall measurements, spectroscopic ellipsometry and UV-visible spectrophotometry. The electronic concentration and the mobility were found to be critically dependent on the deposition temperature, exhibiting increased resistivity and reduced electronic mobility at low temperature. The corresponding optical properties were measured as a function of photon energy ranging from 1.5 to 5.0 eV. The simulated extinction coefficients allowed the determination of optical band gaps, i.e., ranging from 3.36 to 3.41 eV. The electronic carrier concentration appears to be related to the reduction in the corresponding band gap in ZnO thin films.

• Journal of the Korean Chemical Society
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• v.63 no.5
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• pp.352-359
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• 2019

The most important parameter of organic molecules for energy harvesting application focuses mainly on their band gap (HOMO-LUMO). In this report, we synthesized differently substituted 1,3,5-triazine based organic molecule which on future processing can be used in organic electronics like solar cells and OLED's. The energy gap of the synthesized novel analogue was calculated using cyclic voltammetry, UV-Visible spectroscopy and compared with density functional theory (DFT) studies.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1988.10a
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• pp.1-4
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• 1988

The high frequency and quasi-state C-V curves were measured to determine the interface state density in MNOS devices. Berglund method was appropriate for determination of energy distribution of interface state density all over the energy gap. Applying Vg vs Øs relation by Berlund method to comparison-analysis method of the high-frequency and quasi-static C-V curves, we were able to determine the energy distribution by only measured C-V curves without theoretical C-V curves. The interface state density near the conduction band was high at lower temperature than room temperature.

• Nuclear Engineering and Technology
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• v.55 no.5
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• pp.1519-1526
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• 2023

For the first time Aluminium-BariumeZinc oxide nanocomposite (ZABONC) was synthesized by solution combustion method where calcination was carried out at low temperatures (600℃) to study the electromagnetic (EM) (X/γ) radiation shielding properties. Further for characterization purpose standard techniques like PXRD, SEM, UV-VISIBLE, FTIR were used to find phase purity, functional groups, surface morphology, and to do structural analysis and energy band gap determination. The PXRD pattern shows (hkl) planes corresponding to spinel cubic phase of ZnAl₂O4, cubic Ba(NO₃)₂, α and γ phase of Al₂O₃ which clearly confirms the formation of complex nano composite. From SEM histogram mean size of nano particles was calculated and is in the order of 17 nm. Wood and Tauc's relation direct energy band gap calculation gives energy gap of 2.9 eV. In addition, EM (X/γ) shielding properties were measured and compared with the theoretical ones using standard procedures (NaI (Tl) detector and multi channel analyzer MCA). For energy above 356 keV the measured shielding parameters agree well with the theory, while below this value slight deviation is observed, due to the influence of atomic/crystallite size of the ZABONC. Hence synthesized ZABONC can be used as a shielding material in EM (X/γ) radiation shielding.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.3
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• pp.111-119
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• 2014

A novel pulsed laser ablation process in liquid was investigated to prepare scheelite-type ceramic [calcium tungstate ($CaWO_4$) and calcium molybdate ($CaMoO_4$)] nanocolloidal particles. The crystalline phase, particle morphology, particle size distribution, absorbance and optical band-gap were investigated. Stable colloidal suspensions consisting of well-dispersed $CaWO_4$ and $CaMoO_4$ nanoparticles with narrow size distribution could be obtained without any surfactant. Particle tracking analysis using optical microscope combined with image analysis was applied for a fast determination of particle size distribution in the prepared nanocolloidal suspensions. The mean nanoparticle size of $CaWO_4$ and $CaMoO_4$ colloidal nanoparticles were 16 nm and 30 nm, with the standard deviations of 2.1 and 5.2 nm, respectively. The optical absorption edges showed blue-shifted values about 60~70 nm than those of reported in bulk crystals. And also, the estimated optical energy band-gaps of $CaWO_4$ and $CaMoO_4$ colloidal particles were 5.2 and 4.7 eV. The observed band-gap widening and blue-shift of the optical absorbance could be ascribed to the quantum confinement effect due to the very small size of the $CaWO_4$ and $CaMoO_4$ nanocolloidal particles prepared by pulsed laser ablation in liquid.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.370.1-370.1
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• 2016

Volatile organic compounds (VOCs) are considered hazardous air pollutants and these are emitted from building materials and household products. VOCs can cause global warming as well as human sickness, and even cancer. Photocatalysis provides a way of converting VOCs into harmless materials. Various researches have shown that $TiO_2$ is the most efficient photocatalysts due to its excellent activity. In this study, metal/non-metal doped $TiO_2$ particles are synthesized for the enhancement of the photocatalytic properties of pure $TiO_2$. By metal/non-metal doping, band gap energies of prepared samples were analyzed by UV/Visible spectrophotometer. The physical and chemical properties of synthesized powder were characterized by field emission scanning electron microscope, by BET for measuring their specific surface area, and by XRD for phase identification and particle size determination. Degradation ability for p-xylene was evaluated through monitoring the concentration in a closed chamber. Relation between their properties and decomposition abilities for VOC were evaluated based on the experimental results.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.208-208
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• 2013

ZnO는 직접천이형 반도체로 약 3.37 eV의 넓은 에너지 band-gap과 60 meV의 비교적 큰 엑시톤 결합 에너지를 가지고 있다. 또한 단결정 성장 가능과 투명성 등 많은 장점들로 인하여 GaN와 대체할 자외선 또는 청색 발광소자나 ITO를 대체할 투명전극 같은 광범위한 광전소자로 큰 주목을 받으며 연구되어 왔다. 이러한 ZnO는 다양한 물질들의 첨가를 통해 인위적으로 특성변화가 가능한데 Mg, Be, Cd 첨가를 통한 에너지 밴드갭의 확장과 수축, Al 첨가를 통한 전기전도성의 증가 등이 그 예이다. 최근에는 밴드갭 조절을 이용한 ZnO-ZnMgO와 같은 이종접합구조가 광소자 등의 응용을 목적으로 많은 연구가 이루어지고 있다. 더불어 나노선이나 나노막대 같은 1차원 구조를 갖는 ZnO 계열 반도체의 연구는 현재 큰 이슈가 되고 있는 나노 크기의 소자 개발에 매우 큰 적용 가능성을 가지고 있다. 우리는 수열합성법을 이용하여 hexagonal ZnO 나노막대를 성장하고 그 표면에 core-shell 형태의 $ZnO-Zn_{1-x}Mg_xO$ (x=0.084) 양자우물을 원자층증착법으로 증착하였다. 본 연구에서는 만들어진 ZnO 나노막대와 ZnO-ZnMgO 나노막대, core-shell ZnO-ZnMgO 양자우물 sample들의 저온(5 K) Photoluminescence 측정을 통하여 광학적 band 구조를 분석하였다. 실험적으로 의도된 양자우물 두께와 다른 실제 형성된 양자무물의 두께를 알아내기 위하여 2차원 hexagonal 양자우물 band 구조에서 self-consistent nonlinear Poisson-Schr$\"{o}$dinger 방정식 계산과 컴퓨터 시뮬레이션을 이용하였으며, 이 방법으로 계산된 값과 실험값의 비교를 통하여 실제 형성된 양자우물의 두께를 정량적으로 유출할 수 있었다.