• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.23 no.3
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• pp.306-313
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• 2012

In order to enhance the isolation level between two dual-band E-slot microstrip patch antennas, EBG structure which operates in UMTS Tx(1.92~1.98 GHz) and Rx(2.11~2.17 GHz) band is proposed. The proposed EBG structure made with a periodic array of two different size EBG unit cells which has a modified mushroom-type for isolation improvement between two antennas. They do not share a common ground plane of the microstrip patch antenna. Overall size of the fabricated antenna is $210.5mm{\times}117mm$. The two different EBG unit cell sizes are $15.6mm{\times}4mm$ and $17.4mm{\times}4mm$, respectively. It was etched on the FR-4 substrate(thickness=3.93 mm, ${\varepsilon}_r$=4.6). The experiment results show that the isolation level between antennas in Tx/Rx band were improved by about 9 dB and 12 dB, respectively, through the use of the proposed EBG structure.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 1999.05a
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• pp.394-397
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• 1999

Impact ionization, which is a kind of a carrier-carrier interaction process occurring in a semiconductor under the influence of a high electric field, is necessary to analyse carrier transport properties. Since the parabolic or nonparabolic E-k relation is different from real band structure in high energy range, exact model of impart ionization have been presented using full band I-k relation and Fermi's golden rule. We have investigated relation of density of states, energy band structure and overlap integral. We make use of empirical pseudopotential method in order to calculate energy band structure of silicon, tetrahedron method in order to calculate density of states. We know density of states very depends on energy band structure and overlap integral depends on the primary electron energy.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.20 no.10
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• pp.1837-1844
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• 2016

This paper proposes an antenna of the fork type structure that operates in the UWB (Ultra Wide Band) frequency band (3.1 ~ 10.6 GHz). The proposed antenna is attached a circular patch in order to obtain the UWB band characteristics to the fork-type patch antenna. The ground plane is implemented in a arc-shape configuration. The effect of various parameters of the modified fork type radiating patch and partial arc ground plane for UWB operation is investigated. The proposed antenna is made of $34.0{\times}50.0{\times}1.0mm^3$ and is fabricated on the permittivity 4.4 FR-4 substrate. The experiment results shown that the proposed antenna obtained the -10 dB impedance bandwidth 8200 MHz (2.7 ~ 10.9 GHz) covering the UWB bands. This result satisfied the characteristics of ultra-wideband and the proposed antenna will be applicable to an ultra wideband system.

• Journal of the Microelectronics and Packaging Society
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• v.11 no.2 s.31
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• pp.43-47
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• 2004

A coupler or divider is a microwave passive component used for power coupling or dividing. Regarding the trend of current telecommunication systems monolithic integration of passive components is highly desirable. In this study by the LTCC(Low temperature co-fired ceramics) technology a 2012 size type dual band coupler with multi-layer structure was fabricated. To achieve the desired coupling values for both DCS and EGSM bands, broad side coupled patterns were used with multi-layer structure. Its characteristics such as coupling, insertion loss, isolation and directivity values were measured and compared with simulation results.

• Bulletin of the Korean Chemical Society
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• v.28 no.12
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• pp.2333-2337
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• 2007

Nanoporous TiO2 and ZrO2 thin films were spin-coated using a surfactant-templated approach from Pluronic P123 (EO20PO70EO20) as the templating agent, titanium alkoxide (Ti(OC4H9)4) as the inorganic precursor, and butanol as a the solvent. The control of the electronic structure of TiO2 is crucial for its various applications. We found that the band gap of the hybrid nanoporous thin films can be easily tuned by adding an acetylacetonestabilized Zr(OC4H9)4 precursor to the precursor solution of Ti(OC4H9)4. Pores with a diameter of 5 nm-10 nm were randomly dispersed and partially connected to each other inside the films. TiO2 and ZrO2 thin films have an anatase structure and tetragonal structure, respectively, while the TiO2-ZrO2 hybrid film exhibited no crystallinity. The refractive index was significantly changed by varying the atomic ratio of titanium to zirconium. The band gap for the nanoporous TiO2 was estimated to 3.43 eV and that for the TiO2-ZrO2 hybrid film was 3.61 eV.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.18 no.6 s.121
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• pp.639-647
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• 2007

This paper proposed the novel method that can realize the parallel coupled line(PCL) band-pass filter with directly coupled feeding structure by means of transforming the first and last PCL sections of the conventional PCL band-pass filter into K-inverters, then substituting T-type equivalence for K-inverter. The proposed method supplies simple design formulae and can considerably reduce time and efforts needed to optimize filter performance when compared to reported methods using external Q or equivalent parameters. On the basis of the proposed method, the band-pass filter using directly coupled feeding structure and having 18% fractional bandwidth was designed and fabricated. The validity of proposed method was proven by the measured result.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.420-420
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• 2010

AC PDP에서 유전체 보호막으로 사용되는 MgO 박막은 높은 이차전자방출계수($\gamma$)로 인해 방전전압을 낮춰주는 중요한 역할을 하고 있다. 이러한 MgO 보호막의 이차전자방출계수를 증가시키기 위해 MgO 의 Energy Band Structure 규명이 중요한 연구 주제가 되고 있다. MgO의 이차전자방출계수($\gamma$)는 Auger 중화 이론에 의해 방출 메커니즘이 설명이 되고, 그 원리는 다음과 같다. 고유의 이온화 에너지를 가진 이온이 MgO 표면에 입사 되면, Tunneling Effect에 의해 전자와 이온 사이에 중화가 일어나고, 중화가 되고 남은 에너지가 MgO Valance Band 내의 전자에게 전달되면 이때 남은 에너지(${\Delta}E$)가 MgO의 일함수(Work function) 보다 크게 되면 이차전자로 방출된다. 본 실험 에서는 $\gamma$-FIB System을 이용하여 결정 방향이 (100), (110), (111)을 갖는 Single Crystal MgO에 이온화 에너지가 24.58eV인 He Ion source를 주사 하였을 때 Auger self-convolution을 통해 이차전자의 운동 에너지 분포를 구하고, 이를 통해 MgO 내의 Energy Band Structure를 실험적으로 측정하였다. 이를 통해 MgO Single Crystal의 일함수 및 Defect Level의 분포를 확인하였다.

• Journal of IKEEE
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• v.27 no.1
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• pp.71-77
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• 2023

In this paper, a dual-band stopband frequency selective surface that can be applied to Wi-Fi 6E systems is designed to block external interfering signals with adjacent operating frequency spectrum in indoor wireless LAN environments. The proposed frequency selective surface structure has frequency blocking characteristics in the 2.4GHz and 6GHz bands, and is realized through a modified crossed dipole structure and an interlocking puzzle form between unit structures. The proposed structure is designed to have stable frequency response characteristics with respect to incident angle and polarization, and the experimental results show good agreement with the simulation results for incident waves from 0° to 45°.

• Transactions on Electrical and Electronic Materials
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• v.18 no.6
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• pp.323-329
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• 2017

This reports the electrical behavior, bonding structure and Schottky contact of gallium-zinc-oxide (GZO) thin film annealed at $100{\sim}400^{\circ}C$. The mobility of GZO with high density of PL spectra and crystal structure was also increased because of the structural matching between GZO and Si substrate of a crystal structure. However, the GZO annealed at $200^{\circ}C$ with an amorphous structure had the highest mobility as a result of a band to band tunneling effect. The mobility of GZO treated at low annealing temperatures under $200^{\circ}C$ increased at the GZO with an amorphous structure, but that at high temperatures over $200^{\circ}C$ also increased when it was the GZO of a crystal structure. The mobility of GZO with a Schottky barrier (SB) was mostly increased because of the effect of surface currents as well as the additional internal potential difference.

• Journal of electromagnetic engineering and science
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• v.17 no.4
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• pp.233-237
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• 2017

In this paper, a dual-band high frequency (HF) and ultra-high frequency (UHF) radio-frequency identification (RFID) tag antenna is presented that operates in the 13.56 MHz band as well as in the 920 MHz band. A spiral coil along the edges of the antenna substrate is designed to handle the HF band, and a novel meander open complementary split ring resonator (MOCSRR) dipole antenna is utilized to generate the UHF band. The dual-band antenna is supported by a single-feeding port for mono-chip RFID applications. The antenna is fabricated using an FR4 substrate to verify theoretical and simulation designs, and it has compact dimensions of $80mm{\times}40mm{\times}0.8mm$. The proposed antenna also has an omnidirectional characteristic with a gain of approximately 1 dBi.