• 한국재료학회지
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• 제22권4호
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• pp.180-184
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• 2012

Nanostructures of ZnO, such as nanowires, nanorods, nanorings, and nanobelts have been actively studied and applied in electronic or optical devices owing to the increased surface to volume ratio and quantum confinement that they provide. ZnO seed layer (about 40 nm thick) was deposited on Si(100) substrate by RF magnetron sputtering with power of 60 W for 5 min. ZnO nanorods were grown on ZnO seed layer/Si(100) substrate at $95^{\circ}C$ for 5 hr by hydrothermal method with concentrations of $Zn(NO_3)_2{\cdot}6H_2O$ [ZNH] and $(CH_2)_6N_4$ [HMT] precursors ranging from 0.02M to 0.1M. We observed the microstructure, crystal structure, and photoluminescence of the nanorods. The ZnO nanorods grew with hexahedron shape to the c-axis at (002), and increased their diameter and length with the increase of precursor concentration. In 0.06 M and 0.08 M precursors, the mean aspect ratio values of ZnO nanorods were 6.8 and 6.5; also, ZnO nanorods had good crystal quality. Near band edge emission (NBE) and a deep level emission (DLE) were observed in all ZnO nanorod samples. The highest peak of NBE and the lower DLE appeared in 0.06 M precursor; however, the highest peak of DLE and the lower peak of NBE appeared in the 0.02 M precursor. It is possible to explain these phenomena as results of the better crystal quality and homogeneous shape of the nanorods in the precursor solution of 0.06 M, and as resulting from the bed crystal quality and the formation of Zn vacancies in the nanorods due to the lack of $Zn^{++}$ in the 0.02 M precursor.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.184-184
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• 2012

Recently, InGaN/GaN multi-quantum well grown on GaN pyramid structures have attracted much attention due to their hybrid characteristics of quantum well, quantum wire, and quantum dot. This gives us broad band emission which will be useful for phosphor-free white light emitting diode. On the other hand, by using quantum dot emission on top of the pyramid, site selective single photon source could be realized. However, these structures still have several limitations for the single photon source. For instance, the quantum efficiency of quantum dot emission should be improved further. As detection systems have limited numerical aperture, collection efficiency is also important issue. It has been known that micro-cavities can be utilized to modify the radiative decay rate and to control the radiation pattern of quantum dot. Researchers have also been interested in nano-cavities using localized surface plasmon. Although the plasmonic cavities have small quality factor due to high loss of metal, it could have small mode volume because plasmonic wavelength is much smaller than the wavelength in the dielectric cavities. In this work, we used localized surface plasmon to improve efficiency of InGaN qunatum dot as a single photon emitter. We could easily get the localized surface plasmon mode after deposit the metal thin film because lnGaN/GaN multi quantum well has the pyramidal geometry. With numerical simulation (i.e., Finite Difference Time Domain method), we observed highly enhanced decay rate and modified radiation pattern. To confirm these localized surface plasmon effect experimentally, we deposited metal thin films on InGaN/GaN pyramid structures using e-beam deposition. Then, photoluminescence and time-resolved photoluminescence were carried out to measure the improvement of radiative decay rate (Purcell factor). By carrying out cathodoluminescence (CL) experiments, spatial-resolved CL images could also be obtained. As we mentioned before, collection efficiency is also important issue to make an efficient single photon emitter. To confirm the radiation pattern of quantum dot, Fourier optics system was used to capture the angular property of emission. We believe that highly focused localized surface plasmon around site-selective InGaN quantum dot could be a feasible single photon emitter.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.189-189
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• 2012

Lead sulfide (PbS) nanocrystal quantum dots (NQDs) are promising materials for various optoelectronic devices, especially solar cells, because of their tunability of the optical band-gap controlled by adjusting the diameter of NQDs. PbS is a IV-VI semiconductor enabling infrared-absorption and it can be synthesized using solution process methods. A wide choice of the diameter of PbS NQDs is also a benefit to achieve the quantum confinement regime due to its large Bohr exciton radius (20 nm). To exploit these desirable properties, many research groups have intensively studied to apply for the photovoltaic devices. There are several essential requirements to fabricate the efficient NQDs-based solar cell. First of all, highly confined PbS QDs should be synthesized resulting in a narrow peak with a small full width-half maximum value at the first exciton transition observed in UV-Vis absorbance and photoluminescence spectra. In other words, the size-uniformity of NQDs ought to secure under 5%. Second, PbS NQDs should be assembled carefully in order to enhance the electronic coupling between adjacent NQDs by controlling the inter-QDs distance. Finally, appropriate structure for the photovoltaic device is the key issue to extract the photo-generated carriers from light-absorbing layer in solar cell. In this step, workfunction and Fermi energy difference could be precisely considered for Schottky and hetero junction device, respectively. In this presentation, we introduce the strategy to obtain high performance solar cell fabricated using PbS NQDs below the size of the Bohr radius. The PbS NQDs with various diameters were synthesized using methods established by Hines with a few modifications. PbS NQDs solids were assembled using layer-by-layer spin-coating method. Subsequent ligand-exchange was carried out using 1,2-ethanedithiol (EDT) to reduce inter-NQDs distance. Finally, Schottky junction solar cells were fabricated on ITO-coated glass and 150 nm-thick Al was deposited on the top of PbS NQDs solids as a top electrode using thermal evaporation technique. To evaluate the solar cell performance, current-voltage (I-V) measurement were performed under AM 1.5G solar spectrum at 1 sun intensity. As a result, we could achieve the power conversion efficiency of 3.33% at Schottky junction solar cell. This result indicates that high performance solar cell is successfully fabricated by optimizing the all steps as mentioned above in this work.

• 대한화학회지
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• 제55권3호
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• pp.502-508
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• 2011

[ $Nd_{2x}Cd_{2-3x}SiO_4$ ]($0.01{\leq}x{\leq}0.21$) [S1-S3: x=0.01, 0.11 and 0.21] 고용체를 졸-겔 방법을 통해 합성하였다. X선 분말회절(XRD) 측정은 $P2_1$/m 공간군의 단사정계를 보여준다. 평균 결정 크기는 20-45 nm이다. 주사전자현미경(SEM)으로 살펴본 모양은 구형의 특성을 보인다. 에너지 분산 X 선 분광기(EDS) 결과로부터 모든 구성 원소의 존재를 확인하였다. ~750 nm에서의 흡수 밴드는 $Nd^{3+}$ 이온의 $^4I_{9/2}{\rightarrow}^4F_{7/2}+^4S_{3/2}$ 전이에 기인한다. 10, 40, 77, 300 K에서 S1-S3의 전자 상자성 공명 (EPR) 선모양은 $Nd^{3+}$ 이온의 빠른 스핀 격자 이완에 기인하는 폭이 넓은 구분되지 않은 등방성의 선모양을 보여준다.

• 한국지진공학회논문집
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• 제22권3호
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• pp.175-184
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• 2018

In this paper, comparative analysis of the 9.12 Gyeongju and 11.15 Pohang earthquakes was conducted in order to provide probable explanations and reasons for the damage observed in the 11.15 Pohang earthquake from both earthquake and structural engineering perspectives. The damage potentials like Arias intensity, effective peak ground acceleration, etc observed in the 11.15 Pohang earthquake were generally weaker than those of the 9.12 Gyeongju earthquake. However, in contrast to the high-frequency dominant nature of the 9.12 Gyeongju earthquake records, the spectral power of PHA2 record observed in the soft soil site was highly concentrated around 2Hz. The base shear around 2 Hz frequency was as high as 40% building weight. This frequency band is very close to the fundamental frequency of the piloti-type buildings severely damaged in the northern part of Pohang. Unfortunately, in addition to inherent vertical irregularity, most of the damaged piloti-type buildings had plan irregularity as well and were non-seismic. All these contributed to the fatal damage. Inelastic dynamic analysis indicated that PHA2 record demands system ductility capacity of 3.5 for a structure with a fundamental period of 0.5 sec and yield base shear strength of 10% building weight. The system ductility level of 3.5 seems very difficult to be achievable in non-seismic brittle piloti-type buildings. The soil profile of the PHA2 site was inversely estimated based on deconvolution technique and trial-error procedure with utilizing available records measured at several rock sites during the 11.15 Pohang earthquake. The soil profile estimated was very typical of soil class D, implying significant soil amplification in the 11.15 Pohang earthquake. The 11.15 Pohang earthquake gave us the expensive lesson that near-collapse damage to irregular and brittle buildings is highly possible when soil is soft and epicenter is close, although the earthquake magnitude is just minor to moderate (M 5+).

• 대한전자공학회논문지SD
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• 제39권3호
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• pp.98-109
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• 2002

블루투스 무선 기술은 음성 및 데이터 전송을 위한 단거리 일대다중 무선 주파수 통신을 위해 제안된 범용적으로 사용 가능한 무선통신 기술이다. 블루투스는 2.4㎓ ISM 밴드에서 동작하며 약 l0m 범위의 다양한 이동 장치와 휴대용 장치를 위한 저가격의 기저대역 무선 접속을 제공한다 본 논문은 DMA 방식의 블루투스 기저대역 모듈을 개발하고 그 구조와 테스트 결과를 보인다. 개발된 모듈은 링크 컨트롤러, UART 그리고 오디오 코덱의 세가지 블록으로 구성되며 메인 프로세서 사이의 정보 전달 및 DMA지원을 위한 버스 인터페이스와 RF모듈과의 데이터 송수신을 위한 RF 인터페이스를 지원한다. DMA의 사용은 FIFO를 이용한 데이터의 송수신 방법을 사용하는 기저대역 모듈에 비하여 모듈의 구현 크기 및 데이터의 처리 속도에 있어서도 많은 차이점을 갖는다. 각 블록을 DMA를 지원하도록 설계함으로써 작은 크기의 모듈을 설계할 수 있다. 이러한 작은 크기의 모듈은 생산비용의 절감과 함께 다양한 응용분야에 사용될 수 있는 범용성을 제공한다. 또한 본 모듈은 UART를 이용한 펌웨어 업그레이드 방식을 지원하고 소프트 IP로 설계되었으며 FPGA와 ASIC으로 구현하여 개인용 컴퓨터 사이의 파일 전송과 비트-스트림 전송을 통해 테스트 되었다.

• International journal of advanced smart convergence
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• 제6권2호
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• pp.59-64
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• 2017

There are three sorts of voices of female vocalists: soprano, mezzo-soprano, and contralto according to the transliteration. Among them, the soprano has the highest vocal range. Since the voice is generated through the human vocal tract based on the voice generation model, it is greatly influenced by the vocal tract. The structure of vocal organs differs from person to person, and the formants characteristic of vocalization differ accordingly. The formant characteristic refers to a characteristic in which a specific frequency band appears distinctly due to resonance occurring in each vocal tract in the vocal process. Formant characteristics include personality that occurs in the throat, jaw, lips, and teeth, as well as phonological properties of phonemes. The first formant is the throat, the second formant is the jaw, the third formant and the fourth formant are caused by the resonance phenomenon in the lips and the teeth. Among them, pronunciation is influenced not only by phonological information but also by jaws, lips and teeth. When the mouth is small or the jaw is stiff when pronouncing, pronunciation becomes unclear. Therefore, the higher the accuracy of the pronunciation characteristics, the more clearly the formant characteristics appear in the grammar spectrum. However, many soprano singers can not open their mouths because their jaws, lips, teeth, and facial muscles are rigid to maintain high tones when singing, which makes the pronunciation unclear and thus the formant characteristics become unclear. In this paper, in order to confirm the accuracy of the pronunciation characteristics of soprano singers, the experimental group was selected as the soprano singers A, B, C, D, E of Korea and analyzed the grammar spectrum and conducted the MOS test for pronunciation recognition. As a result, soprano singer B showed a clear recognition from F1 to F5 and MOS test result showed the highest recognition rate with 4.6 points. Soprano singers A, C, and D appear from F1 to F3, but it was difficult to find formants above 2kHz. Finally, the soprano singer E had difficulty in finding the formant as a whole, and MOS test showed the lowest recognition rate at 2.1 points. Therefore, we confirmed that the soprano singer B, which exhibits the most distinct formant characteristics in the grammar spectrum, has the best pronunciation accuracy.

• 한국결정성장학회지
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• 제20권3호
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• pp.107-112
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• 2010

높은 광흡수 계수를$(1{\times}10^5cm^{-1})$ 가지는 CIGS는 Ga의 비율에 따라서 밴드갭을 조절할 수 있다는 장점을 지니고 있다. CIGS의 밴드갭은 Ga의 비율에 따라 $CuInSe_2$(Eg: 1.0 eV)에서 $CuGaSe_2$(Eg: 1.68 eV)까지의 범위에 존재하며, 태양전지에 서 이상적인 fill factor 모양을 가지도록 Ga의 비율을 높게 조성한다. CIGS 흡수층을 제작하는 방법에는 co-evaporator 방식이 가장 널리 사용되며 연구되고 있다. 이에 본 연구에서는 수평 형태의 hydride vapor transport (HVT)법을 고안하여 CIGS 나노 구조 및 에피성장을 시도하였다. HVT법은 $N_2$ 분위기에서 원료부의 CIGS 혼합물을 HCl과 반응시켜 염화물 기체상태로 변환 후 growth zone까지 이동하여 성장을 하는 방식이다. 성장기판은 c-$Al_2O_3$ 기판과 u-GaN을 사용하였다. 성장 후 field emission scanning electron microscopy(FE-SEM)과 energy dispersive spectrometer(EDS)를 이용하여 관찰하였다.

• 천문학회지
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• 제50권3호
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• pp.79-92
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• 2017

We present a BV I optical photometric study of the old open cluster Ruprecht 6 using the data obtained with the SMARTS 1.0 m telescope at the CTIO, Chile. Its color-magnitude diagrams show the clear existence of the main-sequence stars, whose turn-off point is located around $V{\approx}18.45mag$ and $B-V{\approx}0.85mag$. Three red clump (RC) stars are identified at V = 16.00 mag, I = 14.41 mag and B - V = 1.35 mag. From the mean $K_s-band$ magnitude of RC stars ($K_s=12.39{\pm}0.21mag$) in Ruprecht 6 from 2MASS photometry and the known absolute magnitudes of the RC stars ($M_{K_S}=-1.595{\pm}0.025mag$), we obtain the distance modulus to Ruprecht 6 of $(m-M)_0=13.84{\pm}0.21mag$ ($d=5.86{\pm}0.60kpc$). From the ($J-K_s$) and (B - V ) colors of the RC stars, comparison of the (B - V ) and (V - I) colors of the bright stars in Ruprecht 6 with those of the intrinsic colors of dwarf and giant stars, and the PARSEC isochrone fittings, we derive the reddening values of E(B - V ) = 0.42 mag and E(V - I) = 0.60 mag. Using the PARSEC isochrone fittings onto the color-magnitude diagrams, we estimate the age and metallicity to be: $log(t)=9.50{\pm}0.10(t=3.16{\pm}0.82Gyr)$ and $[Fe/H]=-0.42{\pm}0.04dex$. We present the Galactocentric radial metallicity gradient analysis for old (age > 1 Gyr) open clusters of the Dias et al. catalog, which likely follow a single relation of $[Fe/H]=(-0.034{\pm}0.007)R_{GC}+(0.190{\pm}0.080)$ (rms = 0.201) for the whole radial range or a dual relation of $[Fe/H]=(-0.077{\pm}0.017)R_{GC}+(0.609{\pm}0.161)$ (rms = 0.152) and constant ([Fe/H] ~ -0.3 dex) value, inside and outside of RGC ~ 12 kpc, respectively. The metallicity and Galactocentric radius ($13.28{\pm}0.54kpc$) of Ruprecht 6 obtained in this study seem to be consistent with both of the relations.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.286-286
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• 2016

Hexagonal boron nitride (hBN) is a dielectric insulator with a two-dimensional (2D) layered structure. It is an appealing substrate dielectric for many applications due to its favorable properties, such as a wide band gap energy, chemical inertness and high thermal conductivity[1]. Furthermore, its remarkable mechanical strength renders few-layered hBN a flexible and transparent substrate, ideal for next-generation electronics and optoelectronics in applications. However, the difficulty of preparing high quality large-area hBN films has hindered their widespread use. Generally, large-area hBN layers prepared by chemical vapor deposition (CVD) usually exhibit polycrystalline structures with a typical average grain size of several microns. It has been reported that grain boundaries or dislocations in hBN can degrade its electronic or mechanical properties. Accordingly, large-area single crystalline hBN layers are desired to fully realize the potential advantages of hBN in device applications. In this presentation, we report the growth and transfer of centimeter-sized, nearly single crystal hexagonal boron nitride (hBN) few-layer films using Ni(111) single crystal substrates. The hBN films were grown on Ni(111) substrates using atmospheric pressure chemical vapor deposition (APCVD). The grown films were transferred to arbitrary substrates via an electrochemical delamination technique, and remaining Ni(111) substrates were repeatedly re-used. The crystallinity of the grown films from the atomic to centimeter scale was confirmed based on transmission electron microscopy (TEM) and reflection high energy electron diffraction (RHEED). Careful study of the growth parameters was also carried out. Moreover, various characterizations confirmed that the grown films exhibited typical characteristics of hexagonal boron nitride layers over the entire area. Our results suggest that hBN can be widely used in various applications where large-area, high quality, and single crystalline 2D insulating layers are required.