• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.128.1-128.1
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• 2016

Nitrided-metal gates on the high-${\kappa}$ dielectric material are widely studied because of their use for sub-20nm semiconductor devices and the academic interest for the evanescent states at the Si/insulator interface. Issues in these systems with the Si substrate are the electron mobility degradation and the reliability problems caused from N defects that permeates between the Si and the $SiO_2$ buffer layer interface from the nitrided-gate during the gate deposition process. Previous studies proposed the N defect structures with the gap states at the Si band gap region. However, recent experimental data shows the possibility of the most stable structure without any N defect state between the bulk Si valence band maximum (VBM) and conduction band minimum (CBM). In this talk, we present a new type of the N defect structure and the electronic structure of the proposed structure by using the first-principles calculation. We find that the pair structure of N atoms at the $Si/SiO_2$ interface has the lowest energy among the structures considered. In the electronic structure, the N pair changes the eigenvalue of the silicon-induced gap state (SIGS) that is spatially localized at the interface and energetically located just above the bulk VBM. With increase of the number of N defects, the SIGS gradually disappears in the bulk Si gap region, as a result, the system gap is increased by the N defect. We find that the SIGS shift with the N defect mainly originates from the change of the kinetic energy part of the eigenstate by the reduction of the SIGS modulation for the incorporated N defect.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.112-112
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• 2012

Graphene has been considered as one of the potential post Si-materials due to its high mobility. [1] However, since graphene is semi-conductor with zero band gap, it is difficult to achieve high Ion/Ioff ratio, one of the most important requirements for commercial devices. There have been many attempts to open its band gap for high Ion/Ioff ratio, but most of them end up lowering the mobility. [2-5] Thus, we proposed and demonstrated a new device structure for graphene transistor based on one of the unique properties of graphene for high Ion/Ioff: using this approach, we were able to achieve the ratio over $10^5$. [6] Our device has several major advantages over previously proposed graphene based electronic devices. Since our device does not alter the given properties of graphene, such as opening the band gap, it has no fundamental issues on mobility degradations. In addition, our device is fully compatible with current Si technology and we were able to fabricate the devices with 6 inch wafer scale with CVD (Chemical Vapor Deposition) grown graphene. In this presentation, we will discuss about the details of our graphene device including the device structure and the detailed understanding of working mechanism. We will present device characteristics including I-V curves with $10^5$ on/off ratio. We will also present the performance of an inverter based on our devices. Finally, we will discuss the current issues and their potential solutions.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.243.1-243.1
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• 2016

Recently, many groups have attempted to fabricate 3-dimensional (3D) structures of GaN such as pyramids, rods, stripes and annulars. Since quantum structures on non-polar and semi-polar planes of 3D structures have less influence of internal electric filed, multi quantum wells (MQWs) formed on those planes have high quantum efficiency. Especially, pyramidal and annular structures consist of various crystal planes with different emission wavelength, providing a possibillity of phosphor-free white light emtting diodes (WLEDs).[1] However, it still has problem to obtain high color rendering index (CRI) number because of narrow-band emission and poor indium composition caused by the formation of few number of facets during metal-organic chemical vapor deposition growth.[2] If we can fabricate 3D structure having more various facets, we can make broad-band emittied WLEDs and improve CRI number. In this study, we suggest a simple method to fabricate 3D structures having various facet and containing high indium composition by means of a combination of metal-organic chemical vapor deposition and wet chemical etching techniques.

• Bulletin of the Korean Chemical Society
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• v.25 no.2
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• pp.298-300
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• 2004

An alternative molecular porphyrin-phthalocyanine aggregate was prepared and characterized with UV-visible and X-ray absorption spectroscopies. UV-visible experiments evidence 1-dimensional porphyrin-phthalo-cyanine array formed by mixing $SnTPPCl_2 ({\lambda}_{max}=429,\;{\varepsilon}=2.4{\times10^ 5 /M{\cdot}cm)\;and\;NiPc(OBu)_8({\lambda}_{max}=744 nm,\;{\varepsilon}= 2.0{\times}10^ 5 /M{\cdot}cm)$ in solution. In the UV-visible spectrum of the porphyrin-phthalocyanine array, $(SnPNiPc)_n$, a new Q-band appeared at 844 nm with decrease of the Q-band peak of $NiPc(OBu)_8$ at 744 nm. The red-shift of Q-band evidences an alternative porphyrin-phthalocyanine array formed in solution through metal-halide interaction rather than ${\pi}-{\pi}$ facial interaction, in which nickel of $NiPc(OBu)_8$ coordinates with chloride of $SnTPPCl_2$ through self assembly. Ni K-edge XANES (X-ray absorption near edge structure) spectra also support the axial ligation of nickel to chloride. The square planar structure of $NiPc(OBu)_8$ turns to an octahedral structure in (SnPNiPcSnP) by axial ligation. A higher energy-shift (0.2 eV) of the preedge peak of (SnPNiPcSnP) indicaties partial oxidation of nickel by charge transfer from NiPc$(OBu)_8$ to SnTPPCl$_2$.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.59 no.12
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• pp.2245-2249
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• 2010

The physical properties of the LB films with merocyanine dyes have been published and attract attention due to the possibility of molecular structure control. The evaluation of the thin films was focused for the purpose of molecular structure control. The molecular structure in the case of the thin films with dyes can be examine by optical absorption spectra measurements. In the result measured by optical absorption spectra, the $[DX]_{1-x}[DO]_x$ LB films shows a large in-plane anisotropy and the transition dipole moment of red-shifted band is preferentially oriented perpendicular to the dipping direction of the film, while that of the blue-shifted band prefers the dipping direction. The spectrum for $0_{\circ}$, $90_{\circ}$-polarized light coincides with the spectrum for non-polarized light and also with the spectrum was observed in the LB film deposited using a fresh solution. These results show that the aging process does not cause a structural change in chromophore but a change in the degree of molecular orientation. In the results, study of the merocyanine dyes LB films using optical absorption spectra would an interesting problem of absorbance peak shifts and mixed components.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.19 no.2
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• pp.168-173
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• 2008

In this paper, we have designed transmit/receive Module for X band which can be applied to active phase array radar system. AESA(active electrically beam steered array) is able to transmit high power as like TWTA with composition of TH Module and steer a main beam faster than mechanically steering system. The proposed structure of T/R Module for X band is brick type for physical structure, common leg structure electrically and small size design as MCM(multi chip module). The results show that the characteristic of proposed T/R module can fully cover the specification of required military radar application.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.19 no.8
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• pp.940-945
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• 2008

In this paper, we have designed the Brick Transmit/Receive Module for K-band which can be applied to active phase array radar system. The proposed structure of T/R Module for K band is brick type for MCM(Multi Chip Module) form and the satisfaction of tile type T/R Module can apply to structure of cavity and main characteristic. The fabricated brick type T/R Module confirmed the main characteristic for electrical goal performance in test and this structure can be applied to active phase array radar.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.15 no.8
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• pp.1653-1658
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• 2011

A novel circuit structure of dual-band bandstop filters is proposed in this paper. This structure comprises two shunt-connected tri-section stepped impedance resonators with a transmission line in between. Theoretical analysis from the equivalent circuit and design procedures are described. We represented graphs for filter design from the derived synthesis equations by resonance condition of circuits. Notably, advantages of the proposed filter structure are compact size in design, wide range of realizable resonance frequency ratio, and more realizable impedances.

• Journal of the Korean Applied Science and Technology
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• v.20 no.4
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• pp.316-323
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• 2003

Zinc complexes with bis[2-(o-hydroxyphenyl) naphtol [1,2] oxazolato ligands (ZnPBO-4) and its derivatives (ZnPBO-S) were synthesized, and luminescent properties of these materials were investigated. Both the fluorescent emission band and electroluminescent emission band were discussed based on their ligand structure differences. The emission band found that it strongly depends on the molecular structure of introduced ligand. It was tuned from 446 nm to 491 nm by changing the ligand structures. Spreading of the ${\pi}$-conjugation in 2-(o-hydroxyphenyl) group gives rise to a blue shift. The EL properties also showed good consistency with their differences of ligand structure. Bright-blue EL emission with a maximum luminance of 3,100 $cd/m^2$ at 12V, current density, 575 $mA/m^2$ was obtained from the organic light-emitting diodes (OLEDs) using ZnPBO-4 as emitting layer. It was also found that the newly synthesized materials were suitable to be used as emitting materials in organic EL device.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.16 no.2
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• pp.93-99
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• 2016

In this paper, higher order coupler using small size waveguide which applicable for mobile Ku-band multimode monopulse satellite tracking antenna system, has been designed, implemented and tested. Proposed higher order mode coupler adopts a coaxial structure for low profile characteristic considering installation property to mobile satellite terminal system. In addition, by using proposed coupler, extracted tracking error signal pattern has measured and confirmed that required tracking accuracy is satisfied in desired frequency band. In the future, proposed coupler could utilize for multimode monopulse satellite tracking system for high tracking accuracy.