• Journal of Electrical Engineering and Technology
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• 제12권3호
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• pp.1250-1256
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• 2017

This paper proposes the design of microstrip patch antennas for dual-band polarization adjustment. The antenna has a multi-layer structure for dual-band operation, and each layer contains a resonating patch with surrounding strips separated into two parts. The antenna polarization is adjusted by varying the separated positions of the strips, while fixing other design parameters. To demonstrate the feasibility, an antenna sample with right-hand circular polarization is fabricated, and its antenna characteristics are measured in a full anechoic chamber. The operating principle of polarization adjustment in the dual frequency bands is also verified by observing near electromagnetic fields and the magnetic surface current density around the antenna.

• Applied Biological Chemistry
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• 제23권4호
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• pp.242-245
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• 1980

Panax ginseng의 과피(果皮) anthocyanins 색소(色素)를 1% HCl/propanol로 추출하여 thin layer chromatography로 분리하였으며 이를 다시 paper chromatography로 검정하였다. 침건반응, spectral analysis 등의 방법으로 주색소(主色素)가 pelragonidin-3-monoglucoside임을 확인하였다. Panax quinquefolius의 색소도 같은 방법으로 동정하였으며 주색소(主色素)가 pelragonidin-3-monogluside임이 확인되었으며 Panax ginseng에 있는 5색소 Band중에서 제2색소(第二色素)(Band 4)가 결여되어 있었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.413-413
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• 2012

Lead sulfide (PbS) Colloidal quantum dots (CQDs) are promising material for the photovoltaic device due to its various outstanding properties such as tunable band-gap, solution processability, and infrared absorption. More importantly, PbS CQDs have large exciton Bohr radius of 20 nm due to the uniquely large dielectric constants that result in the strong quantum confinement. To exploit desirable properties in photovoltaic device, it is essential to fabricate a device exhibiting stable performance. Unfortunately, the performance of PbS NQDs based Schottky solar cell is considerably degraded according to the exposure in the air. The air-exposed degradation originates on the oxidation of interface between PbS NQDS layer and metal electrode. Therefore, it is necessary to enhance the stability of Schottky junction device by inserting a passivation layer. We investigate the effect of insertion of passivation layer on the performance of Schottky junction solar cells using PbS NQDs with band-gap of 1.3 eV. Schottky solar cell is the simple photovoltaic device with junction between semiconducting layer and metal electrode which a significant built-in-potential is established due to the workfunction difference between two materials. Although the device without passivation layer significantly degraded in several hours, considerable enhancement of stability can be obtained by inserting the very thin LiF layer (<1 nm) as a passivation layer. In this study, LiF layer is inserted between PbS NQDs layer and metal as an interface passivation layer. From the results, we can conclude that employment of very thin LiF layer is effective to enhance the stability of Schottky junction solar cells. We believe that this passivation layer is applicable not only to the PbS NQDs based solar cell, but also the various NQDs materials in order to enhance the stability of the device.

• 한국항해항만학회지
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• 제30권9호
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• pp.763-766
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• 2006

In this paper, the EM wave absorbers were designed and fabricated for X -band sensors using Carbon of dielectric material with CPE. The complex relative permittivity of samples is calculated by using measurement results of S-parameter. We simulated the double-layered type EM wave absorber with broad bandwidth using the measured complex relative permittivity by changing the thickness and layer, which was fabricated based on the simulated design The fabricated EM wave absorber consists of 1 mm first layer sheet facing metal with Carbon composition ratio 70 vol. % and 1.5 mm second layer sheet with Carbon composition ratio 60 vol. %. The measured results showed a good agreement to the simulated ones. It is found toot the optimized absorption ability of double-layered type EM wave absorber with thickness of 2.5 mm is higher than 10 dB from 7.8 GHz to 13.3 GHz.

• Applied Microscopy
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• 제28권3호
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• pp.329-343
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• 1998

Early wound healing responses in the skin of the Korean fire bellied toad, Bombina orientalis, were examined using histochemical , scanning and transmission electron microscopical techniques. Cutaneous wounds were induced by sharp razor blade , and maintained in special cages for up to 3 days. By this treatment whole parts of epithelium and dermis were profoundly affected. After injury, retraction of damaged surface of the skin was observed. At 3 hours after injury, poly-band was form by mucous substance. The wound skin consisted of mucous gland secreted mucous substance which flows into wound cavity and the wound area was sealed by mucous substance which form thick layer at 6 hours. It appeared that natural disposition showed acid and neutral mucous substance by reaction of PAS and Alcian blue (pH 2.5) staining. After formation of the poly-band, epithelial cells were formed by migration of regenerating epithelial cells. These cells moved over the wound surface by migration at 12 hours after wounding. Poly-band was much increased in thickness and migrating cells were completely formed wound closure at 24 hours post-wounding. After 72 hours regenerated epithelial layer consists of four or five cell layers which are similar to clear, granular, and spinous layer.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2008년도 추계종합학술대회 B
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• pp.632-635
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• 2008

본 논문에서는 LTCC 다층회로 기술을 이용하여 GSM/CDMA 대역을 분리하는 Diplexer를 설계하였다. Diplexer의 집적도를 높이기 위해 3차원 적층형 인덕터와 커패시터를 이용하여 설계되었다. Diplexer는 유전율 7.2인 총 6층의 LTCC 기판에 설계되었고, 설계 되어진 다이플렉서의 크기는 CB-CPW pad를 포함하여 $3,450{\times}4,000{\times}600{\mu}m^3$이다. GSM 대역의 통과 필터는 -0.23dB 이하의 삽입 손실과 -10dB 이하의 반사 손실, CDMA 대역의 통과 필터는 -0.53dB 이하의 삽입 손실과 -10dB 이하의 반사 손실의 특성을 보였다.

• Bulletin of the Korean Chemical Society
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• 제22권7호
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• pp.743-747
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• 2001

New azomethine metal complexes were synthesized systematically and characterized. Beryllium, magnesium, or zinc ions were used as a central metal cation and aromatic azomethines (L1-L4) were employed as a chelating anionic ligand. Emission peaks o f the complexes in both solution and solid states were observed mostly at the region of 400-500 nm in the luminescence spectra, where blue light was emitted. Three of them (BeL1 (Ⅰ), ZnL2 (Ⅱ), and ZnL3 (Ⅲ)) were sublimable and thus were applied to the organic light-emitting devices (OLED) as an emitting layer, respectively. The device including the emitting layer of Ⅰ exhibited white emission with the broad luminescence spectral range. The device with the emitting layer of Ⅱ showed blue luminescence with the maximum emission peak at 460 nm. Their ionization potentials, electron affinities, and electrochemical band gaps were investigated with cyclic voltammetry. The electrochemical gaps of 2.98 for I, 2.70 for Ⅱ, and 2.63 eV for Ⅲ were found to be consistent with their respective optical band gaps of 3.01, 2.95 and 2.61 eV within an experimental error. The structure of OLED manufactured in this study reveals that these complexes can work as electron transporting materials as well.

• 반도체디스플레이기술학회지
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• 제21권1호
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• pp.71-74
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• 2022

For the process simplification in the fabrication of organic light emitting diode(OLED), top emission OLED (TEOLED) was fabricated without lithium fluoride(LiF) used as an electron injection layer (EIL). After co-deposition of Mg and Ag with a different process conditions, a cathode material adjacent to EIL was optimized when Mg and Ag have a ratio of 1:9 considering sheet resistance and transmittance. From the energy band diagram of TEOLED, band gap difference between Trisaluminium (Alq3) and Mg:Ag cathode show the difference of 0.4 eV according to the usage of LiF The fabricated TEOLED without LiF showed the improvement of 5.2 % and 2.7 % in the luminance and the current density comparing that with LiF. The results show there is no significant difference in OLED characteristics regardless of LIF layer in the TEOLED structures.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
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• pp.152-152
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• 2003

Hg$\sub$l-x/Cd$\sub$x/Te (MCT) was grown by hot wall epitaxy. Prior to the MCT growth, the CdTe (111) buffer layer was grown on the GaAs substrate at the temperature of 590$^{\circ}C$ for 15 min. When the thickness of the CdTe buffer layer was 5 $\mu\textrm{m}$ or thicker, the full width at half maximum values obtained from the x-ray rocking curves were found to significantly decrease. After a good quality CdTe buffer layer was grown, the MCT epilayers were grown on the CdTe (111) /GaAs substrate at various temperatures in situ. The crystal quality for those epilayers was investigated by means of the x-ray rocking curves and the photocurrent experiment The photoconductor characterization for the epilayers was also measured The energy band gap of MCT was determined from the photocurrent measurement and the x composition rates from the temperature dependence of the energy band gap were turned out

• 진공이야기
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• 제3권1호
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• pp.9-15
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• 2016

Molybdenum disulfide ($MoS_2$), which has 0.65 nm-thick atomic layer, can be easily separated layer by layer due to weak van der Waals interactions in out-of-plane direction. ($MoS_2$), has a good potential in nanoelectronics, because it has high electrical mobility and On/Off ratio. Its band gap energy changes from indirect to direct band gap energy as it goes from bulk to monolayer. Therefore, atomically thin ($MoS_2$), is widely studied in academic and engineering fields. Here, we introduce the research of atomically thin $MoS_2$ and discuss the research directions.