• International Journal of Advanced Culture Technology
• /
• 제10권4호
• /
• pp.555-560
• /
• 2022

In this study, the insertion loss and phase delay according to the multi-layer structure radome parameters were analyzed using the boundary value solution approach, and the multi-layer structure and hexa mesh structures with low-loss electrical characteristics for the Ku-band transmission/reception frequency of 10.7 ~ 14.5 GHz were designed and manufactured. A hexa mesh was applied to minimize radio wave transmission and scattering, which lowered the transmittance refractive index according to the radio incident angle and minimized dielectric loss through high-density foam. Similar to the simulation result, the transmission loss obtained the gain in a specific receiving frequency band, and in the transmission frequency band, an excellent low loss characteristic was obtained with an insertion loss of 0.8dB or less. The results of this study can be used in radio transmission radomes of low-weight, low-cost end-system protection devices.

• 융합신호처리학회논문지
• /
• 제16권4호
• /
• pp.156-161
• /
• 2015

본 논문에서는 GPS(Global positioning System)-Bluetooth-DSRC(Dedicated short range communication) 대역의 신호를 동시에 수신할 수 있는 차량용 이중편파 다중대역 안테나를 적층형으로 설계하였다. 안테나는 다층 구조(Multi-Layer)이고, 유전율이 4.4이고, 두께가 1.6mm 인 FR4-epoxy 기판을 사용하였다. GPS와 DSRC 대역은 원형편파(Circular Polarization) 특성을 가지고, 블루투스 대역은 선형편파(Linear Polarization) 특성을 가지며, 이들 안테나는 단일 프루브 급전하였다. 안테나는 Ansys HFSS v11로 시뮬레이션 하였고, 측정결과와 비교하면서 크기가 $67mm{\times}67mm{\times}4.8mm$인 안테나를 설계하였다. 최적 설계된 안테나는 -10dB 대역폭이 각 대역에서 82MHz, 127MHz, 862MHz로 측정되었고, GPS 및 DSRC 대역의 3dB 축비 대역폭은 12MHz와 112MHz로 시뮬레이션 되었다. 이 결과는 시스템이 요구하는 사양을 만족하고 있음을 확인하였다.

• 한국항해항만학회:학술대회논문집
• /
• 한국항해항만학회 1994년도 추계학술발표회
• /
• pp.59-68
• /
• 1994

A wide band design method of an double layerred electromagnetic wave absorber sintered ferrite which has a flat and an anti-grid shape layers is proposed and discussed. The wide band electomagnetic wave absorber can be designed by the equivalent material constants method for the each layer, As a result the wide band ferrite electonmagnetic wave absorber with the band width of 30MHz to 3670, 3680 or 3690MHz were designed under the tolerance limits of -20dB reflectivity.

• 대한전기학회논문지
• /
• 제44권4호
• /
• pp.483-489
• /
• 1995

To investigate the mechanism generated by irradiation in the insulator layer irradiated MIS (Metal - Insulator - Semiconductor) device, the various types of MIS capacitors depending on insulator thickness, insulator types and implanted impurities are fabricated on the P-type wafer. MIS capacitors exposed by 1Mrad Co$^{60}$ .gamma.-ray are measured for flat band voltage and charge density shifts pre- and post-irradiation. The measuring results of post-irradiation show the flat band voltage shifting toward negative direction and charge density increasing regardless of parameters. This results have a good agreement with calculated data by computer simulation. Si$_{3}$N$_{4}$ layers have a good radiation-hardness than SiO$_{2}$ layers compared to the results of post-irradiation. Also, radiation-induced negative trap is discovered in the implanted insulator layer. Using numerical analysis, four continuty equations (conduction-band electrons continuity equation, valence-band holes continuity equation, trapped electrons continuity equation, trapped holes continuity equation) are solved and charge distributions according to the distance and Si-Insulator interface states are investigated.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
• /
• pp.234.1-234.1
• /
• 2015

Molybdenum disulfide (MoS2)는 van der Waals 결합을 통한 층상구조의 물질로써 뛰어난 물리화학적, 기계적 특성으로 Field Effect Transistors (FETs), Photoluminescence, Photo Detectors, Light Emitters 등의 많은 분야에서 연구가 보고 되어지고 있는 차세대 2D-materials이다. 이처럼 MoS2 가 다양한 범위에 응용될 수 있는 이유는 layer 수가 증가함에 따라 1.8 eV의 direct band gap 에서 1.2 eV 의 indirect band-gap으로 특성이 변화할 뿐만 아니라 다양한 고유의 전기적 특성을 지니고 있기 때문이다. 그러나 MoS2 는 원자층 단위의 layer control 이 어렵다는 이유로 다양한 전자소자 응용에 많은 제약이 보고 되어졌다. 본 연구에서는 MoS2 의 layer를 control 하기 위해 ICP system 에서 mesh grid 를 삽입하여 Cl2 radical을 효과적으로 adsorption 시킨 뒤, Ion beam system 에서 Ar+ Ion beam 을 통해 한 층씩 제거하는 방식의 atomic layer etching (ALE) 공정을 진행하였다. ALE 공정시 ion bombardment 에 의한 damage 를 최소화하기 위해 Quadruple Mass Spectrometer (QMS) 를 통한 에너지 분석으로 beam energy 를 20 eV에서 최적화 할 수 있었고, Raman Spectroscopy, X-ray Photoelectron Spectroscopy (XPS), Atomic Force Microscopy(AFM) 분석을 통해 ALE 공정에 따른 MoS2 layer control 가능 여부를 증명할 수 있었다.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
• /
• pp.320-320
• /
• 2014

Amorphous silicon alloy (a-Si) solar cells and modules have been receiving a great deal of attention as a low-cost alternate energy source for large-scale terrestrial applications. Key to the achievement of high-efficiency solar cells using the multi-junction approach is the development of high quality, low band-gap materials which can capture the low-energy photons of the solar spectrum. Several cell designs have been reported in the past where grading or buffer layers have been incorporated at the junction interface to reduce carrier recombination near the junction. We have investigated profiling the composition of the a-SiGe alloy throughout the bulk of the intrinsic material so as to have a built-in electrical field in a substantial portion of the intrinsic material. As a result, the band gap mismatch between a-Si:H and $a-Si_{1-x}Ge_x:H$ creates a barrier for carrier transport. Previous reports have proposed a graded band gap structure in the absorber layer not only effectively increases the short wavelength absorption near the p/i interface, but also enhances the hole transport near the i-n interface. Here, we modulated the GeH4 flow rate to control the band gap to be graded from 1.75 eV (a-Si:H) to 1.55 eV ($a-Si_{1-x}Ge_x:H$). The band structure in the absorber layer thus became like a U-shape in which the lowest band gap was located in the middle of the i-layer. Incorporation of this structure in the middle and top cell of the triple-cell configuration is expected to increase the conversion efficiency further.

• 한국수산과학회지
• /
• 제1권2호
• /
• pp.73-79
• /
• 1968

Silica Gel, Hyflo super-Cel, 및 Micro-Cel C 박층을 이용한 xanthophyll 분리를 위한 chromatography의 실험결과를 요약하면 1) 색소분리능력은 Micro-Cel C 박층이 가장 좋고 Silica Gel 박층에서도 만족할만한 하였다. 그러나 Silica Gel 박층은 자체의 산성때문에 조작중 epoxy xanthophyll의 furanoid 이성화를 초래하였다. 2) $CaSO_4$ 등의 binder는 접착보조효과 보다는 오히려 분리능력을 방해하였다. 3) 전개조건은 차광하의 불포화용기내에서 $15\~20$분간의 전개에 $13\%$ acetone-petroleum ether 용매를 쓰는 것이 적당하였다. 4) Band의 형상 및 trailing을 정상화하는데는 양편 가장자리의 박층을 $0.2\~0.3cm$ 폭으로 제거하는 것이 효과적 이였다. 5) 박층의 두께는 10g의 Micro-Cel C 분말을 75ml의 증유수에 현탁시켜 그중 3ml 취하여 한개의 $2\times20cm$ glass slide에 도포한것이 적당하였다. 7) 이상의 결과에서 Micro-Cel C thin-layer는 미량의 시료로서 단시간내에 빠른 조작으로 artifact 생성없이 xanthophyll을 분리 할 수 있고 band는 손쉽게 긁어내어 흡광도법에 의해 정량적인 목적에도 이용할 수 있었다.

• 한국공작기계학회:학술대회논문집
• /
• 한국공작기계학회 2004년도 춘계학술대회 논문집
• /
• pp.124-128
• /
• 2004

By the use of a similar numerical method as that in the previous paper, the forming limit strain by coaling method of clad sheet metals is investigated, in which the FEM is applied and J2G(J$_2$-Gotoh's corner theory) is utilized as the plasticity constitutive equation. Declined Multilayer Metals Materials are stretched in a plane-strain state, with various work-hardening exponent n-values and thicknesses of each layer. Processes of shear-band formation in such composite sheets are clearly illustrated. It is concluded that, in the bonded state, the higher limiting strain of one layer is reduced due to the lower limiting strain of the other layer and vice versa, and does not necessarily obey the rule of linear combination of the limiting strain of each layer weighted according thickness.

• 센서학회지
• /
• 제13권4호
• /
• pp.277-281
• /
• 2004

$Hg_{1-x}Cd_{x}Te$ (MCT) was grown by hot wall epitaxy. Prior to the MCT growth, the CdTe (111) buffer layer was grown on the GaAs substrate at the temperature of $590^{\circ}C$ for 15 min. When the thickness of the CdTe buffer layer was $5{\mu}m$ or thicker, the full width at half maximum values obtained from the x-ray rocking curves were found to significantly decrease. After a good quality CdTe buffer layer was grown, the MCT epilayers were grown on the CdTe (111)/GaAs substrate at various temperatures in situ. The crystal quality for those epilayers was investigated by means of the x-ray rocking curves and the photocurrent experiment. The photoconductor characterization for the epilayers was also measured. The energy band gap of MCT was determined from the photocurrent measurement and the x composition rates from the temperature dependence of the energy band gap were turned out.

• 한국전기전자재료학회논문지
• /
• 제17권7호
• /
• pp.764-769
• /
• 2004

In order to reduce operating voltage of the GaN based blue-violet laser diodes, the effect of highly Mg doped GaN layer, which was grown below ohmic contact metals, on contact resistivity as well as operating voltage has been investigated. The addition of the highly Mg doped GaN layer greatly reduced contact resistivity of Pd/Pt/Au ohmic contacts from $5.2 \times {10}^-2 \Omegaㆍ$\textrm{cm}^2$ to 7.5 \times {10}^-4 \Omegaㆍ$\textrm{cm}^2$$. In addition, it also decreased device voltage at 20 mA by more than 3 V. Temperature- dependent sheet resistivity of the highly Mg doped GaN layer suggested that the reduction of the contact resistivity could be attributed to predominant current flow at the interface between the Pd/Pt/Au contacts and p-GaN through a deep level defect band, rather than the valence band.