• 제목/요약/키워드: Band Layer

검색결과 1,057건 처리시간 0.024초

Electrical and Optical Properties of Zinc Oxide Thin Films Deposited Using Atomic Layer Deposition

  • Kim, Jeong-Eun;Bae, Seung-Muk;Yang, Hee-Sun;Hwang, Jin-Ha
    • 한국세라믹학회지
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    • 제47권4호
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    • pp.353-356
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    • 2010
  • Zinc oxide (ZnO) thin films were deposited using atomic layer deposition. The electrical and optical properties were characterized using Hall measurements, spectroscopic ellipsometry and UV-visible spectrophotometry. The electronic concentration and the mobility were found to be critically dependent on the deposition temperature, exhibiting increased resistivity and reduced electronic mobility at low temperature. The corresponding optical properties were measured as a function of photon energy ranging from 1.5 to 5.0 eV. The simulated extinction coefficients allowed the determination of optical band gaps, i.e., ranging from 3.36 to 3.41 eV. The electronic carrier concentration appears to be related to the reduction in the corresponding band gap in ZnO thin films.

Electronic Structures and Magnetic Properties of Fe/Si/Fe Trilayer

  • Park, Jin-Ho;Youn, Suk-Ju;Min, Byung-Il;Yi, Jae-Yel
    • Journal of Magnetics
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    • 제1권1호
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    • pp.4-8
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    • 1996
  • Employing the LMTO band method, we have studied electronic and magnetic properties of Fe/Si/Fe trilayer in which the z-direction is chosen to be (111) direction of FeSi with B2 phase, We have also determined electronic structure of bulk FeSi, as a reference material. The ground state of FeSi is paramagnetic insulator with a band gap of 0.05 eV. Band structures of Fe/Si/Fe with varying the thickness of the spacer layer reveal that the spacer layer is metallic, and the states along the growth direction do not disperse much reflecting a two-dimensional nature. Magnetic moment of Fe atom in the interfacial layer of Fe/Si/Fe is reduced a lot as compared to the bulk value, suggesting a strong hybridization between Fe and Si states. The geometry of the Fermi surface indicates that the magnetic coupling period of ~8ML (monolayers) in Fe/Si/Fe is explained with a short Fermi wave vector of bcc Si.

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A Study of Convective Band with Heavy Rainfall Occurred in Honam Region

  • Moon, Tae-Su;Ryu, Chan-Su
    • 한국환경과학회지
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    • 제24권5호
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    • pp.601-613
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    • 2015
  • On the study of the characteristics and life cycle of mesoscale convective band in type of airmass that occurred in the Honam area from June to September for only 4 years in the period of 2009~2012, 10 examples based on the amount of rainfall with AWS 24 hours/60 minutes rainfalls, Mt. Osung radar 1.5 km CAPPI/X-SECT images and KLAPS data for convective band with heavy rainfall event were selected. There were analyzed and classified by using the convective band with heavy rainfall occurred along the convergence line of sea wind in the form of individual multi-cellular cell and moving direction of convective band appeared in a variety of patterns; toward southwestern (2 cases), northeastern (4 cases), congesting (2 cases), and changing its moving direction (2 cases). The case study dated of the 17th Aug. 2012 was chosen and implemented by sequentially different evolution of its shape along the convergence line of sea wind cell and moving direction of convective band as equivalent potential temperatures at the lower layer have increased to the upper layer 500 hPa, that the individual cells were developed vertically and horizontally through their merger, but owing to divergence caused by weakened rainfall and descending air current, the growth of new cell was inhibited resulting in dissipation of convective cells.

도플러 속도계(DVL)를 위한 광대역 수중 음향 트랜스듀서 (Broad-Band Underwater Acoustic Transducer for Doppler Velocity Log)

  • 윤철호;이영필;고낙용;문용선
    • 제어로봇시스템학회논문지
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    • 제19권9호
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    • pp.755-759
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    • 2013
  • A broad-band underwater acoustic transducer that uses thickness vibration mode, derived from a disk type piezoelectric ceramic, has been proposed and designed for DVL (Doppler Velocity Log). Three different types of acoustic transducer were evaluated with respect to the transmitting voltage response, receiving voltage sensitivity and bandwidth of the transducer. The effect of the acoustic impedance matching layer and backing layer is discussed. The results demonstrated that three matching layer with lossy backing layer is the best configuration for underwater transducer. The trial underwater acoustic transducer with three matching layer has a frequency bandwidth of 55%, maximum transmitting voltage response of 200 dB and a maximum receiving voltage sensitivity of -187.3 dB.

코팅제의 변형한계에 대한 수치적연구 (Numerical Investigation of Forming Limit of Coated Sheet Metals)

  • 정태훈;김종호
    • 한국정밀공학회:학술대회논문집
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    • 한국정밀공학회 1997년도 춘계학술대회 논문집
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    • pp.460-464
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    • 1997
  • By the used of a similar numerical method as in the previous paper, the forming limit stain of coatedsheet metals is investigated in which the FEM is applied and J2G(J/sab 2/-Gotoh's corner theory) is utilized as the plasticity constitutive equation. Coated two-layer sheets and sheets bonded with dissimilar sheets on both surface planes are stetched in a plane-strain atate, with various work-hardening exponent n-values and thicknesses of each layer. Processes of shear-band formation in such composite sheets are clearly illustrated. It is concluded that, in the coated state, the higher limiting strain of one layer is reduced due to the lower limiting stain of the other layer and vice, and does not necessarily obey the rule of linear combination of the limiting stain of each layer weighted according thickness.

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전단띠형성에 의한 접합판의 성형한계 연구 (Study of Forming Limit of Bonded Sheet Metals due to Shear Band Localization)

  • 정태훈
    • 한국정밀공학회:학술대회논문집
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    • 한국정밀공학회 1996년도 춘계학술대회 논문집
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    • pp.778-782
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    • 1996
  • By the use of a similar numerical method as that in the previous paper, the forming limit strain of bonded sheet metals is investigated, in which the FEM is applied and J2G(J2-Gotoh's corner theory) is utilized as the plasticity constitutive equation. Bonded two-layer sheets and sheets bonded with dissimilar sheets on both surface planes are stretched in a plane-strain state, with various work-hardening exponent n-values and thicknesses of each layer. Processes of shear-band formation in such composite sheets are clearly illustrated. It is concluded that, in the bonded state, the higher limiting strain of one layer is reduced due to the lower limiting strain of the other layer and vice versa, and does not necessarily obey the rule of linear combination of the limiting strain of each layer weighted according thickness.

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클래드코팅재의 성형성에 대한 수치적연구 (Numerical Investigation of Forming Limit of Clad Coated Sheet Metals)

  • 정태훈
    • 한국공작기계학회:학술대회논문집
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    • 한국공작기계학회 2003년도 춘계학술대회 논문집
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    • pp.340-345
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    • 2003
  • By the use of a similar numerical method as that in the previous paper, the forming limit strain by coating method of clad sheet metals is investigated, in which the FEM is applied and J2G(J2-Gotoh's corner theory) is utilized as the plasticity constitutive equation. Clad two-layer sheets and sheets bonded with dissimilar sheets on both surface planes are stretched in a plane-strain state, with various work-hardening exponent n-values and thicknesses of each layer. Processes of shear-band formation in such composite sheets are clearly illustrated. It is concluded that, in the clad state, the higher limiting strain of one layer is reduced due to the lower limiting strain of the other layer and vice versa, and does not necessarily obey the rule of linear combination of the limiting strain of each layer weighted according thickness.

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MODFEET의 $AL_xGa_{1-x} As Layer$내의 특성 모델 (A Model for Characteristics in the $AL_xGa_{1-x} As Layer$ of MOSFET's)

  • 박광민;오윤경;김홍배;곽계달
    • 대한전자공학회논문지
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    • 제24권3호
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    • pp.445-452
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    • 1987
  • In this paper, a model for characteristics in the AlxGa1-xAs layer of MODFET's is presented. The characteristics of conduction band in the AlxGa1-xAs layer is analyzed with the Fermi-Dirac statistics. And using the conduction band energy which is calculated with the numerical calculation method (false-Positon method), the variations of the electric-field distribution, the ionized donor concentration, and the two-dimensional electron gas density with gate voltage are calculated, respectively. The channel formation process for the parasitic MESFET operation in the MOD structure is also analyzed, and the characteristics in the AlxGa1-xAs layer is analytically modeled. The throretical results describe well the general characteristics in the MOD structure.

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Development of Broad-Band Electromagnetic Wave Absorber for X-band Sensors in Double-layered Type Using Carbon

  • Choi, Chang-Mook;Kim, Dong-Il;Choi, Dong-Han;Li, Rui
    • 한국항해항만학회:학술대회논문집
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    • 한국항해항만학회 2006년도 International Symposium on GPS/GNSS Vol.1
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    • pp.297-300
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    • 2006
  • In this paper, the EM wave absorbers were designed and fabricated for X-band sensors using Carbon of dielectric material with CPE. The complex relative permittivity of samples is calculated by the measured S-parameter data. We simulated the double-layered type EM wave absorber with broad bandwidth using the measured complex relative permittivity by changing the thickness and layer, which was fabricated based on the simulated design. The fabricated EM wave absorber consist of 1mm first layer sheet facing metal with Carbon composition ratio 70 vol% and 1.5 mm second layer sheet with Carbon composition ratio 60 vol%. The comparisons of simulated and measured results are good agreement. As a result, the optimized absorption ability of double-layered type EM wave absorber with thickness of 2.5 mm is higher than 10 dB from 7.8 GHz to 13.3 GHz.

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Opto-Electrical Study of Sol-Gel Derived Antimony Doped Tin Oxide Films on Glass

  • De, Arijit
    • Transactions on Electrical and Electronic Materials
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    • 제16권1호
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    • pp.5-9
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    • 2015
  • Optical and electrical properties were studied for Antimony doped tin oxide thin films from precursors containing 10, 30, 50, and 70 atom% of Sb deposited on bare sodalime silica, barrier layer coated sodalime silica, and pure silica glass substrates by sol-gel spinning technique. The direct band gaps were found to vary from 3.13~4.12 eV when measured in the hv range of 2.5~5.0 eV, and varied from 4.22~5.08 eV when measured in the range of 4.0~7.0 eV. Indirect band gap values were in the range of 2.35~3.11 eV. Blue shift of band gap with respect to bulk band gap and Moss-Burstein shift were observed. Physical thickness of the films decreased with the increase in % Sb. Resistivity of the films deposited on SLS substrate was in the order of $10^{-2}$ ohm cm. Sheet resistance of the films deposited on barrier layer coated soda lime silica glass substrate was found to be relatively less.