• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.162-162
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• 2010

InSb has received great attentions as a promising candidate for the active layer of infrared photodetectors due to the well matched band gap for the detection of $3{\sim}5\;{\mu}m$ infrared (IR) wavelength and high electron mobility (106 cm2/Vs at 77 K). In the fabrication of InSb photodetectors, passivation step to suppress dark currents is the key process and intensive studies were conducted to deposit the high quality passivation layers on InSb. Silicon dioxide (SiO2), silicon nitride (Si3N4) and anodic oxide have been investigated as passivation layers and SiO2 is generally used in recent InSb detector fabrication technology due to its better interface properties than other candidates. However, even in SiO2, indium oxide and antimony oxide formation at SiO2/InSb interface has been a critical problem and these oxides prevent the further improvement of interface properties. Also, the mechanisms for the formation of interface phases are still not fully understood. In this study, we report the quantitative analysis of indium and antimony oxide formation at SiO2/InSb interface during plasma enhanced chemical vapor deposition at various growth temperatures and subsequent heat treatments. 30 nm-thick SiO2 layers were deposited on InSb at 120, 160, 200, 240 and $300^{\circ}C$, and analyzed by X-ray photoelectron spectroscopy (XPS). With increasing deposition temperature, contents of indium and antimony oxides were also increased due to the enhanced diffusion. In addition, the sample deposited at $120^{\circ}C$ was annealed at $300^{\circ}C$ for 10 and 30 min and the contents of interfacial oxides were analyzed. Compared to as-grown samples, annealed sample showed lower contents of antimony oxide. This result implies that reduction process of antimony oxide to elemental antimony occurred at the interface more actively than as-grown samples.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.305-305
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• 2014

양자점(Quantum dots)은 3차원적 운반자 구속과 낮은 전류와 높은 온도에서 작동하는 나노 크기의 전기적, 광학적 소자로 응용이 적합하기 때문에 그 특성을 이용한 단전자 트랜지스터, 적외선 검출기, 레이저, LED, 태양전지 등 반도체 소자로의 응용연구가 활발히 진행되고 있다. 특히 양자점의 낮은 임계전류밀도와 높은 차동 이득(differential gain), 그리고 고온에서 작동이 용이하여 양자점 레이저로 활용되고 있다. 이러한 분야에 양자점을 응용하기 위해서는 양자점의 운반자 동역학을 이해하고 양자점의 모양, 크기, 크기 분포와 같은 특성 조절이 필요하다. 또한 기존의 연구들은 III-V족 화합물 반도체 양자점에 대한 연구가 대부분이며, II-VI족으로 구성된 연구가 미흡한 상황이기 때문에 II-VI족 화합물 반도체 양자점에 대한 많은 연구가 필요한 상황이다. II-VI 족 화합물 반도체 양자점은 기존의 III-V 족 양자점보다 더 큰 엑시톤 결합에너지(exciton binding energy)를 가지고 있으며, 이러한 특성을 가지는 II-VI 족 화합물 반도체 양자점 중에서도 CdTe 양자점은 높은 엑시톤 결합에너지와 녹색 스펙트럼 영역을 필요로 하는 광학적 장치들에 응용 가능성이 높기 때문에 더욱 주목받고 있다. 본 연구에서는 분자 선속 에피 성장법(Molecular Beam Epitaxy; MBE)과 원자 층 교대 성장법(Atomic Layer Epitaxy; ALE)으로 CdTe/ZnTe 나노구조에서 ZnTe 완충층의 두께에 따른 운반자 동역학 및 광학적 특성을 연구 하였다. 저온 광루미네센스 측정(Photoluminescence; PL) 을 통하여 ZnTe 완충층 두께가 증가할수록 양자점의 광루미네센스 피크가 낮은 에너지로 이동함을 알 수 있었는데, 이는 ZnTe 완충층의 두께가 증가할수록 ZnTe 완충층과 CdTe 양자점의 격자 불일치(lattice mismatch)로 인한 구조 변형력이 감소하고 이에 따라 CdTe 양자점으로 가해지는 변형(Strain)이 감소하여 CdTe 양자점의 크기가 증가했기 때문이다. 그리고 ZnTe 완충층의 두께가 증가할수록 PL 세기가 증가함을 알 수 있었는데, 이는 ZnTe 완충층의 두께가 증가할수록 양자 구속 효과로부터 electronic state와 conduction band edge 사이의 에너지 차이의 증가 때문이다. 또한 시분해 광루미네센스 측정 결과 ZnTe의 두께가 증가할수록 양자점의 소멸 시간이 더 길게 측정되었는데, 이는 더 큰 양자점 일수록 엑시톤 오실레이터 강도가 감소하기 때문에 더 긴 소멸 시간을 나타내는 것을 확인할 수 있었다. 결과적으로 본 연구는 ZnTe 두께 변화를 통해 양자점의 에너지 밴드를 제어할 수 있으며, 양자점의 효율 향상을 할 수 있는 좋은 방법임을 제시하고 있다.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2013.04a
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• pp.835-841
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• 2013

Modern solid-state gyroscopes (HRG) with hemispherical resonators from high-purity quartz glass and special surface superfinishing and ultrathin gold coating become the best instruments for precise-grade inertial reference units (IRU) targeting long-term space missions. Designing of these sensors could be a notable contribution into development of Korea as a space nation. In participial, 40mm diameter thin-shell resonator from high-purity fused quartz, fabricated as a single-piece with its supporting stem has been designed, machined, etched, tuned, tested, and delivered by STM Co. (ATS of Ukraine) several years ago; an extremely-high Q-factor (upto 10~20 millions) has been shown. Understanding of the best way how to match such a unique sensor with inner glass assembly of the gyro means how to use the high potential in a maximal extent; and this has become the urgent task. Inner quartz glass assembly has a very thin indium (In) layer soldered the resonator and its silica base (case), but effects of internal resonances between operational modal pair of the shell-cup and its side (parasitic) modes can notable degrade the potential of the sensor as a whole, instead of so low level of resonator's intrinsic losses. Unfortunately, there are special combinations of dimensions of the parts (so-called, "resonant sizes"), when intensive losses of energy occurs. The authors proposed to use the length of stem's fixture as an additional design parameter to avoid such cases. So-called, a cyclic scheme of finite element method (FEM) and ANSYS software were employed to estimate different combinations of gyro assembly parameters. This variant has no mismatches of numerical origin due to FEM's discrete mesh. The optimum length and dangerous "resonant lengths" have been found. The special attention has been paid to analyses of 3D effects in a cup-stem transient zone, including determination of a difference between the positions of geometrical Pole of the resonant hemisphere and of its "dynamical Pole", i.e., its real zone of oscillation node. Boundary effects between the shell (cup) and 3D short "beams" (inner and outer stems) have been ranged. The results of the numerical experiments have been compared with the classic model of a quasi-hemispherical shell band with inextensional midsurface, and the solution using Rayleigh's functions of the $1^{st}$ and $2^{nd}$ kinds. To guarantee the truth of the recommended sizes to a designer of the real device, the analytical and FEM results have been compared with experimental data for a party of real resonators. The consistency of the results obtained by different means has been shown with errors less than 5%. The results notably differ from the data published earlier by different researchers.

• The Sea:JOURNAL OF THE KOREAN SOCIETY OF OCEANOGRAPHY
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• v.4 no.1
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• pp.1-9
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• 1999

Hydrographic survey was carried out in the mid-eastern Yellow Sea from Keum River to Taean Peninsula in order to study the motion of the freshwater from the Keum River during July 07-12, 1997 when a large volume of freshwater was discharged from the Keum River weir. The low-salinity (less than 30.0 psu) plume was distributed over the large area between the Keum River and Ochong Island, 60 km northwest off the Keum River mouth. A band of relatively low saline water, originating from the Keum River, was also observed to the north of Ochong Island. The strong haline front had advanced from near Sibidongpa Island to Ochong Island, 25 km northwest of Sibidongpa Island, for 48 hours. A northwestward flow of a speed greater than 0.2 m/s was observed in the surface plume layer to the north of Sibidongpa Island where the water column was strongly stratified. The observed mean flow and the change of the frontal position are interpreted as resulting from the spreading of the Keum River plume. These results suggest that the discharge from the Keum River plays an important role in the coastal circulation of the mid-eastern Yellow Sea adjacent to the river.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.213-213
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• 2012

It has been known that quantum confinement effect of CdSe nanocrystal was observed by increasing the number of deposition cycle using successive ionic layer adsorption and reaction (SILAR) method. Here, we report on thermally-induced quantum confinement effect of CdSe at the given cycle number using spin-coating technology. A cation precursor solution containing $0.3\;M\;Cd(NO_3)_2{\cdot}4H_2O$ is spun onto a $TiO_2$ nanoparticulate film, which is followed by spinning an anion precursor solution containing $0.3\;M\;Na_2\;SeSO_3$ to complete one cycle. The cycle is repeated up to 10 cycles, where the spin-coated $TiO_2$ film at each cycle is heated at temperature ranging from $100^{\circ}C$ to $250^{\circ}C$. The CdSe-sensitized $TiO_2$ nanostructured film is contacted with polysulfide redox electrolyte to construct photoelectrochemical solar cell. Photovoltaic performance is significantly dependent on the heat-treatment temperature. Incident photon-to-current conversion efficiency (IPCE) increases with increasing temperature, where the onset of the absorption increases from 600 nm for the $100^{\circ}C$- to 700 nm for the $150^{\circ}C$- and to 800 nm for the $200^{\circ}C$- and the $250^{\circ}C$-heat treatment. This is an indicative of quantum size effect. According to Tauc plot, the band gap energy decreases from 2.09 eV to 1.93 eV and to 1.76 eV as the temperature increases from $100^{\circ}C$ to $150^{\circ}C$ and to $200^{\circ}C$ (also $250^{\circ}C$), respectively. In addition, the size of CdSe increases gradually from 4.4 nm to 12.8 nm as the temperature increases from $100^{\circ}C$ to $250^{\circ}C$. From the differential thermogravimetric analysis, the increased size in CdSe by increasing the temperature at the same deposition condition is found to be attributed to the increase in energy for crystallization with $dH=240cal/^{\circ}C$. Due to the thermally induced quantum confinement effect, the conversion efficiency is substantially improved from 0.48% to 1.8% with increasing the heat-treatment temperature from $100^{\circ}C$ to $200^{\circ}C$.

• Korean Journal of Fisheries and Aquatic Sciences
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• v.35 no.5
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• pp.519-523
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• 2002

Soluble polysaccharide (SP) from green layer, Enteromorpba prolifera was extracted 3 times with distilled water at 100$^{\circ}C$ for 2 hrs and fractionated with cetylpyridinium chloride (CPC) and ion exchange chromatography (DEAE Separose CL-6B). The SP amounted to $23.7\%$ of the dry seaweed weight and contained $68.8\%$ carbohydrate. It was mainly constituted of rhamnose, glucose, xylose, sulfate and uronic acid and was fractionated with CPC into three (CPC-S, CPC-PS, CPC-PP) tractions. The major acid fraction CPC-PS accounted for $10.2\%$ of the dry algal weight. CPC-PS was further fractionated on DEAE Sepharose CL-6B into Fr-1 ($8.0\%$), Fr-2 ($35.8\%$), Fr-3 ($23.7\%$) fractions. The Fr-3 fraction contained $2.2\%$ protein, $21.4\%$ sulfate, $15.3\%$ uronic acid, and $72.4\%$ polysacchnrides composed of rhamnose, xylose and glucose. The Fr-2 fraction, which was richer in uronic acid ($17.5\%$) and poorer in sulfate ($19.0\%$) and total sugar ($68.8\%$) than the Fr-3, had a sugar composition close to that of Fr-3. The average molecular weights of Fr-2 and Fr-3 were 510,000 and 830,000 daltons, respectively. Fr-3 turned out to be homogeneous by cellulose acetate electrophoresis.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.30 no.11A
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• pp.1027-1034
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• 2005

IEEE802.15.4a, which is started to realize the PHY layer including high precision ranging/positioning and low data rate communication functions, requires a simple and low power consumable transceiver architecture. To satisfy this requirements, the simple noncoherent on-off keying (OOK) UWB transceiver with the parallel energy window banks (PEWB) giving high precision signal processing interface is proposed. The flexibility of the proposed system in multipath fading channel environments is acquired with the pulse and bit repetition method. To analyze the bit error rate (BER) performance of this proposed system, a noise model in receiver is derived with commonly used random variable distribution, chi-square. BER of $10^{-5}$ under the line-of-sight (LOS) residential channel is achieved with the integration time of 32 ns and signal to noise ratio (SNR) of 15.3 dB. For the non-line-of-sight (NLOS) outdoor channel, the integration time of 72 ns and SNR of 16.2 dB are needed. The integrated energy to total received energy (IRR) for the best BER performance is about $86\%$.

• Journal of the Korean Society of Food Science and Nutrition
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• v.12 no.3
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• pp.207-211
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• 1983

An attempt was made to find out the possibility of utilizing water-melon seed as resources of food fats and protein. The water-melon seed contained 40.40% of crude fat and 28.36% of crude protein. The lipid fraction obtained by silicic acid column chromatography was composed of about 97.35% neutral lipid, and the main components of neutral lipid by thin layer chromatography were triglyceride(50.40%), diglyceride(21.84%) and sterol(11.48%). The predominant fatty acids of total and major lipid classes were linoleic acid(55.30-67.85%), palmitic acid(12.07-28.12%) and oleic acid(9.06-16.40%), whereas stearic acid and linolenic acid were detected as small amounts. The salt soluble protein of watermelon seed was highly dispersible in 0.02M sodium phosphate buffer containing about 0.7M $MgSO_4$, and the extractability of seed protein was about 27%. Glutamic acid and arginine were major amino acids, and the essential amino acids such as lysine, threonine, valine, methionine, isoleucine, leucine and phenylalanine were also detected. The electrophoretic analysis showed 6 bands in water-melon seed protein, and the collection rate of the main protein fraction purified by sephadex G-100 and G-200 was 52.4%. The amino acids of the main fraction protein were also mainly composed of glutamic acid and arginine. The molecular weight for the main protein of the water-melon seed was estimated to be 120,000.

• Journal of the Korean Institute of Telematics and Electronics
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• v.16 no.4
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• pp.36-46
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• 1979

Using N_ Ch silicon gate technology . the capacitors and transistors with various dimenssion were fabricated. Although the applied process was somewhat standard the conditions of ion implantation for the gate were varied by changing the implant energies from 30keV to 60keV for B and from 100 keV to 175keV for P . The doses of the implant also changed from 3 $\times$ 10 /$\textrm{cm}^2$ to 5 $\times$ 10 /$\textrm{cm}^2$ for B and from 4$\times$ 10 /$\textrm{cm}^2$ to 7 $\times$ 10 /$\textrm{cm}^2$ for P . The D. C. parameters such as threshold voltage. substrate doping level, the degree of inversion, capacitance. flat band voltage, depletion layer width, gate oxide thickless, surface states, motile charge density, electron mobility. leakage current were evaluated and also compared with the corresponing theoretical values and / or good numbers for application. The threshold voltages measured using curve tracer and C-V plot gave good agreements with the values calculated from SUPREM II which has been developed by Stanford University process group. The threshold vol tapes with back gate bias were used to calculate the change of the substrate doping level. The measured subthreshold slope enabled the prediction of the degree of inversion The D. C. testing results suggest the realized capacitors and transistors are suited for the memory applications.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.51 no.8
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• pp.340-346
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• 2002

Capacitor material utilized in the downsizing passive devices and integration of passive devices requires the physical and electrical properties at given area such as capacitor thickness reduction, relative dielectric constant increase, low leakage current and thermal stability. common capacitor materials, $Al_2O_3$, $SiO_2$, $Si_3N_4$, $SiO_2$/$Si_3N_4$, TaN and et al., used until recently have reached their physical limits in their application to integration of passive devices. $Ta_2O_{5}$ is known to be a good alternative to the existing materials for the capacitor application because of its high dielectric constant (25~35), low leakage current and high breakdown strength. Despite the numerous investigations of $Ta_2O_{5}$ material, there have little been established the clear understanding of the annealing effect on capacitance characteristic and conduction mechanism. This study presents the dielectric properties $Ta_2O_{5}$ MIM capacitor structure Processed by $O_2$ RTA oxidation. X-ray diffraction patterns showed the existence of amorphous phase in $600^{\circ}C$ annealing under the $O_2$ RTA and the formation of preferentially oriented-$Ta_2O_{5}$ in 650, $700^{\circ}C$ annealing and the AES depth profile showed $O_2$ RTA oxidation effect gives rise to the $O_2$ deficientd into the new layer. The leakage current density respectively, at 3~1l$\times$$10_{-2}$(kV/cm) were $10_{-3}$~$10_{-6}$(A/$\textrm{cm}^2$). In addition, behavior is stable irrespective of applied electric field. the frequency vs capacitance characteristic enhanced stability more then $Ta_2O_{5}$ thin films obtained by $O_2$ reactive sputtering. The capacitance vs voltage measurement that, Vfb(flat-band voltage) was increase dependance on the $O_2$ RTA oxidation temperature.