• The Journal of Korean Academy of Prosthodontics
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• v.28 no.2
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• pp.1-28
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• 1990

The severe atrophic edentulism with poor neuromuscular control militates against successful conventional denture therapy. To such situation, a prescribing of dental implant treatment has been considered with some probability. Implant materials used as a trial for dental implants includes metals, plastic polymers and ceramics. The purpose of this study was to observe histologic response in osseointegration process at titanium implant-tissue interface based on biocompatibility at specific period of sequential natures which were divided into a half month, one, month, two months, three months and immediate as a base line. In this study, unilateral lower left premolar and molar teeth were extraced in three dogs. After allowing to heal for 6 months, three kinds of osseointegrated implant, $Br{\aa}nemark$, Corevent and kimplant(a prototype of SNU implant study)were inserted in each dog respectively according to the above sequence from front to back. The specimens were taken from those dogs at the same time since implant were inserted quite reverse order of the specified periods, and decalcified and processed for histologic examination for the light microscopy and the electron microscopy. The microscopic histologic findings at the interface between titanium implants and tissue were interpretated as follows : A. Light microscopic findings : a. Immediate : Implant were surrounded by compact bone and spongy bone. Microcrak was observed in the superficial bone tissue. Osteocytes were disappeared and bone lacunae were observed as a vacant space in some parts. In the contacting with the spongy bone, bone trabeculae and bone marrow were in contact with the implant. b. A half Month : Osteoblasts exist as a monolayer in th inner bone trabeculae and do bone additiocn. Osteoblasts&inflammatory cells were observed in some parts. c. One Month : The presence of osteoclasts decreased. Osteoblasts did active bone fromation, and bone marrow was in contact with the implant in the many places. d. Two Months : Bone formation was advanced in comparison with the b and c. The presence of osteoclsts was not observed. e. Three Months : The superficial bone tissue contacted with the implants was entirely composed by the compact bone. B. Electron microscopic findings : a. A half month and one month group : In the parts of the active bone formation, osteoblasts with the well developed endoplasmic reticulum and Golgi apparatus were arranged in the monolayer. In the parts of the bone resorption, ruffled border was well developed and many osteoclasts with the well-developed golgi apparatus, mitochondria, vacuole, vesicle and lysosome were existed. b. Three months group : No osteoblasts were observed in the superficial bone tissue. Bone matrix with collaen fiber was observed. c. No significant dirrerence in the histologic findings was observed in $Br{\aa}nemark$, Core-vent and kimplant.

• Current Photovoltaic Research
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• v.9 no.3
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• pp.75-83
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• 2021

The tunnel oxide passivated contact (TOPCon) structure got more consideration for development of high performance solar cells by the introduction of a tunnel oxide layer between the substrate and poly-Si is best for attaining interface passivation. The quality of passivation of the tunnel oxide layer clearly depends on the bond of SiO in the tunnel oxide layer, which is affected by the subsequent annealing and the tunnel oxide layer was formed in the suboxide region (SiO, Si₂O, Si₂O₃) at the interface with the substrate. In the suboxide region, an oxygen-rich bond is formed as a result of subsequent annealing that also improves the quality of passivation. To control the surface morphology, annealing profile, and acceleration rate, an oxide tunnel junction structure with a passivation characteristic of 700 mV or more (V_oc) on a p-type wafer could achieved. The quality of passivation of samples subjected to RTP annealing at temperatures above 900℃ declined rapidly. To improve the quality of passivation of the tunnel oxide layer, the physical properties and thermal stability of the thin layer must be considered. TOPCon silicon solar cell has a boron diffused front emitter, a tunnel-SiO_x/n⁺-poly-Si/SiN_x:H structure at the rear side, and screen-printed electrodes on both sides. The saturation currents J_o of this structure on polished surface is 1.3 fA/cm² and for textured silicon surfaces is 3.7 fA/cm² before printing the silver contacts. After printing the Ag contacts, the J_o of this structure increases to 50.7 fA/cm² on textured silicon surfaces, which is still manageably less for metal contacts. This structure was applied to TOPCon solar cells, resulting in a median efficiency of 23.91%, and a highest efficiency of 24.58%, independently. The conversion efficiency of interdigitated back-contact solar cells has reached up to 26% by enhancing the optoelectrical properties for both-sides-contacted of the cells.

• Korean Journal of Materials Research
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• v.20 no.12
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• pp.661-668
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• 2010

Cu(In,Ga)$Se_2$(CIGS) photovoltaic thin films were electrodeposited on Mo/glass substrates with an aqueous solution containing 2 mM $CuCl_2$, 8 mM $InCl_3$, 20 mM $GaCl_3$ and 8mM $H_2SeO_3$ at the electrodeposition potential of -0.6 to -1.0 V(SCE) and pH of 1.8. The best chemical composition of $Cu_{1.05}In_{0.8}Ga_{0.13}Se_2$ was found to be achieved at -0.7 V(SCE). The precursor Cu-In-Ga-Se films were annealed for crystallization to chalcopyrite structure at temperatures of 100-$500^{\circ}C$ under Ar gas atmosphere. The chemical compositions, microstructures, surface morphologies, and crystallographic structures of the annealed films were analyzed by EPMA, FE-SEM, AFM, and XRD, respectively. The precursor Cu-In-Ga-Se grains were grown sparsely on the Mo-back contact and also had very rough surfaces. However, after annealing treatment beginning at $200^{\circ}C$, the empty spaces between grains were removed and the grains showed well developed columnar shapes with smooth surfaces. The precursor Cu-In-Ga-Se films were also annealed at the temperature of $500^{\circ}C$ for 60 min under Se gas atmosphere to suppress the Se volatilization. The Se amount on the CIGS film after selenization annealing increased above the Se amount of the electrodeposited state and the $MoSe_2$ phase occurred, resulting from the diffusion of Se through the CIGS film and interaction with Mo back electrode. However, the selenization-annealed films showed higher crystallinity values than did the films annealed under Ar atmosphere with a chemical composition closer to that of the electrodeposited state.

• Journal of Physiology & Pathology in Korean Medicine
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• v.24 no.2
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• pp.290-295
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• 2010

Gamigunggui-tang (GMGGT) is one of the important prescriptions that has been used in oriental medicine. We investigated the inhibitory effect of an oral administration of hot water extract of GMGGT on the development of atopic dermatitis (AD) by using Balb/c mice. The induction of atopic dermatitis-like lesion was conducted by the removal of the back hairs and topical application of 2,4-Dinitrochlorobenzene (DNCB) on to the back skin repeatedly. GMGGT was orally administered at a different dose (10.0 mg/kg, 50.0 mg/kg). Skin reactions, consisting of increased ear thickness and the presence of ear inflammation, were observed in mice over three weeks. Oral administration of GMGGT significantly suppressed the skin lesions, ear swelling, spleen weight, total serum IgE in a concentration dependent manner, and also inhibited the infiltration of mast cells in the dorsal skin. In the present study, these results suggested that GMGGT extract inhibits inflammatory response atopic dermatitis. Therefore, GMGGT may be effective substances for the management of AD in human.

• Solar Energy
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• v.17 no.4
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• pp.3-11
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• 1997

Because grain boundaries in polycrystalline silicon act as potential barriers and recombination centers for the photo-generated charge carriers, these defects degrade conversion effiency of solar cell. To reduce these effects of grain boundaries, we investigated various influencing factors such as thermal treatment, various grid pattern, selective wet etching for grain boundaries, buried contact metallization along grain boundaries, grid on metallic thin film. Pretreatment above $900^{\circ}C$ in $N_2$ atmosphere, gettering by $POCl_3$ and Al treatment for back surface field contributed to obtain a high quality poly-Si. To prevent carrier losses at the grain boundaries, we carried out surface treatment using Schimmel etchant. This etchant delineated grain boundaries of $10{\mu}m$ depth as well as surface texturing effect. A metal AI diffusion into grain boundaries on rear side reduced back surface recombination effects at grain boundaries. A combination of fine grid with finger spacing of 0.4mm and buried electrode along grain boundaries improved short circuit current density of solar cell. A ultra-thin Chromium layer of 20nm with transmittance of 80% reduced series resistance. This paper focused on the grain boundary effect for terrestrial applications of solar cells with low cost, large area, and high efficiency.

• The Journal of the Korean Society for Microbiology
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• v.21 no.3
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• pp.311-329
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• 1986

The experimental exposure of animals to sources of ultraviolet radiation (UVR) which emit their energy primarily in the UVB region (280-320nm) is known to result in a number of well-described changes in the recipient's immune competence. Two such changes include a depressed capacity to effectively respond immunologically to transplants of syngeneic UVR tumors and a markedly reduced responsiveness to known inducers of delayedtype (DTH) and contact hypersensitivity (CH) reactions. The results of experiments that were designed to elucidate the mechanisms responsible for UVR-induced immunomodulation have implicated: 1) an altered pattern of lymphocyte recirculation, 2) suppressor T cells(Ts), 3) deviations in systemic antigen presenting cell (APC) potential. 4) changes in the production of interleukin-1-like molecules, and 5) the functional inactivation of epidermal Langerhans cells in this process. The exposure of skin to UVR, therefore, causes a number of both local and systemic alterations to the normal host immune system. In spite of this seeming complexity and diversity of responses, our recent studies have established that each of the UVR-mediated changes is probably of equal importance to creating the UVR-induced immunocompromised state. Normal animals were exposed to low dose UVR radiation on their dorsal surfaces under conditions where a $3.0\;cm^2$ area of skin was physically protected from the light energy. Contact sensitization of these animals with DNFB, to either the irradiated or protected back skin, resulted in markedly reduced CH responses. This was observed in spite of a normal responsiveness following the skin sensitization to ventral surfaces of the UVR-exposed animals. Systemic treatment of the low dose UVR recipients with the drug indomethacin (1-3 micrograms/day) during the UVR exposures resulted in a complete reversal of the depressions observed following DNFB sensitization to "protected" dorsal skin while the altered responsiveness found in the group exposed to the skin reactive chemical through directly UVR-exposed sites was maintained. These studies implicate the importance of EC as effective APC in the skin and also suggest that some of the systemic influences caused by UVR exposure involve the production of prostaglandins. This concept was further supported by finding that indomethacin treatment was also capable of totally reversing the systemic depressions in CH responsiveness caused by high dose UVR exposure (30K joules/$m^2$) of mice. Attempts to analyze the cellular mechanisms responsible established that the spleens of all animals which demonstrated altered CH responses, regardless of whether sensitization was through a normal or an irradiated skin site, contained suppressor cells. Interestingly, we also found normal levels of T effector cells in the peripheral lymph nodes of the UVR-exposed mice that were contact sensitized through normal skin. No effector cells were found when skin sensitization took place through irradiated skin sites. In spite of such an apparent paradox, insight into the probable mechanisms responsible for these observations was provided by establishing that UVR exposure of skin results in a striking and dose-dependent blockade of the efferent lymphatic vessels in all peripheral lymph nodes. Therefore, the afferent phases of immune responses can apparently take place normally in UVR exposed animals when antigen is applied to normal skin. The final effector responses, however, appear to be inhibited in the UVR-exposed animals by an apparent block of effector cell mobility. This contrasts with findings in the normal animals. Following contact sensitization, normal animals were also found to simultaneously contain both antigen specific suppressor T cells and lymph node effector cells. However, these normal animals were fully capable of mobilizing their effector cells into the systemic circulation, thereby allowing a localization of these cells to peripheral sites of antigen challenge. Our results suggest that UVR is probably not a significant inducer of suppressor T-cell activity to topically applied antigens. Rather, UVR exposure appears to modify the normal relationship which exists between effector and regulatory immune responses in vivo. It does so by either causing a direct reduction in the skin's APC function, a situation which results in an absence of effector cell generation to antigens applied to UVR-exposed skin sites, inhibiting the capacity of effector cells to gain access to skin sites of antigen challenge or by sequestering the lymphocytes with effector cell potential into the draining peripheral lymph nodes. Each of these situations result in a similar effect on the UVR-exposed host, that being a reduced capacity to elicit a CH response. We hypothesize that altered DTH responses, altered alloresponses, and altered graft-versus-host responses, all of which have been observed in UVR exposed animals, may result from similar mechanisms.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.27 no.4B
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• pp.365-371
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• 2002

In this paper, the fabricated power PHEMT devices for millimeter-wave that is below a gate-length of 0.2 $\mu\textrm{m}$ using electronic beam lithography technologies, and the DC and frequency characteristics and an output power characteristics were Measured at the various bias conditions. The unit process that is used in PHEMT's manufacture used that low-resistance ohmic contact, air-bridge and back-side lapping process technologies, and so on. The fabricated power PHEMT have an S521 gain of 4 dB and a maximum transconductance(gm) of 317 mS/mm, an unilateral current gain(fT) of 62 GHz, a maximum oscillation frequency(fmax) of 120 GHz at 35 GHz, and a maximum power output(Pmax) of 16 dBm, a power gain(GP) of 4 dB and a drain efficiency(DE) of 35.5 %.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.85.1-85.1
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• 2010

$Cu(In,Ga)Se_2$ (CIGS) thin film solar cell is currently 19.5% higher efficiency and developing a large area technology. The structure of CIGS solar cell that make five unit layers as back contact, light absorption, buffer, front transparent conducting electrode and antireflection to make them sequentially forming. Materials and various compositions of thin film unit which also manufacture a variety method used by the physical and chemical method for CIGS solar cell. The construction and performance test of evaporator for CIGS thin film solar cell has been done. The vapor pressures were changed by using vapor flux meter. The vapor pressure were copper (Cu) $2.1{\times}10^{-7}{\sim}3.0{\times}10^{-7}$ Torr, indium (In) $8.0{\times}10^{-7}{\sim}9.0{\times}10^{-7}$ Torr, gallium (Ga) $1.4{\times}10^{-7}{\sim}2.8{\times}10^{-7}$ Torr, and selenium (Se) $2.1{\times}10^{-6}{\sim}3.2{\times}10^{-6}$ Torr, respectively. The characteristics of the CIGS thin film was investigated by using X-ray diffraction (XRD), scanning electron microscopy/energy dispersive spectroscopy (SEM/EDS) and photoluminescence (PL) spectroscopy using a He-Ne laser. In PL spectrum, temperature dependencies of PL spectra were measured at 1137 nm wavelength.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.73.1-73.1
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• 2010

태양광 시장은 세계적인 금융 위기 속에서도 점점 그 규모가 확대되고 있다. 시장의 규모가 확대되고 있음에도 불구하고 금융 위기를 겪으면서 생산자 중심의 시장에서 수요자 중심의 시장으로 바뀌게 되었다. 이에 따라 더 적은 비용으로 높은 출력의 제품만이 경쟁력을 가지게 됨으로써 효율이 더욱 이슈화되었다. 여러 태양전지 중 가장 점유율이 높은 결정질 태양전지는 일반적인 양산 공정만으로 효율을 높이는데 한계가 있으므로 selective emitter, back contact, light induced plating 등의 새로운 공정을 도입하여 효율을 높이려는 경향이 나타나고 있다. 본 연구에서는, ALD 장치를 사용하여 결정질 태양전지의 후면을 passivation 함으로써 효율을 높이는 방법을 모색하였다. 부동화 층으로는 $Al_2O_3$를 사용하였으며 셀을 제조하여 평가하였다. 실험방법은 p-type의 웨이퍼를 이용하여 습식으로 texturing 후 $POCl_3$ 용액으로 p-n junction을 형성하였고 anti-reflection 막인 SiNx는 PECVD를 사용하여 R.I 2.05, 80nm 두께로 증착하였다. 그런 다음 후면의 n+ layer를 제거하기 위하여 SiNx에 영향을 미치지 않는 용액을 사용하여 후면을 식각하였다. BSF 층은 screen printer로 Al paste를 printing하여 형성하였고 Al etching용액으로 여분의 Al제거한 후 ALD 장치를 이용하여 $Al_2O_3$를 증착하였다. 마지막으로 전극을 형성한 후 laser로 isolation하여 효율을 평가하였다.

• Current Photovoltaic Research
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• v.2 no.1
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• pp.1-7
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• 2014

We developed a method of growing thin Si film at $600^{\circ}C$ by hot wire CVD using a very thin large-grained poly-Si seed layer for thin-film Si solar cells. The seed layer was prepared by crystallizing an amorphous Si film by vapor-induced crystallization using $AlCl_3$ vapor. The average grain size of the p-type epitaxial Si layer was about $20{\mu}m$ and crystallographic defects in the epitaxial layer were mainly low-angle grain boundaries and coincident-site lattice boundaries, which are special boundaries with less electrical activity. Moreover, with a decreasing in-situ boron doping time, the mis-orientation angle between grain boundaries and in-grain defects in epitaxial Si decreased. Due to fewer defects, the epitaxial Si film was high quality evidenced from Raman and TEM analysis. The highest mobility of $360cm^2/V{\cdot}s$ was achieved by decreasing the in-situ boron doping time. The performance of our preliminary thin-film solar cells with a single-side HIT structure and $CoSi_2$ back contact was poor. However, the result showed that the epitaxial Si film has considerable potential for improved performance with a reduced boron doping concentration.