• Restorative Dentistry and Endodontics
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• v.16 no.2
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• pp.118-125
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• 1991

Eighty - eight recently extracted teeth were used to evaluate the leakage characteristics of the following retrofilling materials; amalgam, zinc oxide eugenol cement, glass - ionomer cement, and cermet glass - ionomer cement. Root canals were prepared with step - back method and obturated with gutta percha and zinc oxide eugenol sealer. Root apex were resected 2 mm from apex and class I cavities were prepared with 2 mm or 4 mm depth. The cavities were filled with above materials. After application of varnish on all surface except resected surface, the roots were placed in 1 % methylene blue solution for 6 days. After longitudinal polishing to expose cental parts of filled materials, penetrated depths of dye were measured. The results were as follws. 1. As retrofilling material, glass ionomer cement filling groups showed less leakage than the other groups except zinc oxide eugenol cement filling group(p<0.01). 2. Amalgam filling groups had greater leakage than zinc oxide eugenol cement filling group(p<0.01). 3. 4 mm depth of retrofilled cavity had no effect on leakage characteristics compared with 2 mm depth cavity(p>0.05). 4. Glass ionomer cement and cermet glass ionomer cement filling groups showed less apical leakage than amalgam filling groups. But there was no statistical significance(p>0.05). 5. There was no difference in apical leakage between glass ionomer cement filling groups and cermet glass ionomer cement filling groups(p>0.05).

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2001.04a
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• pp.1117-1120
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• 2001

Chemical mechanical planarization(CMP) has emerged as the planarization technique of choice in both front-end and back-end integrated circuit manufacturing. Conventional CMP process utilize a polyurethane polishing pad and liquid chemical slurry containing abrasive particles. There have been serious problems in CMP in terms of repeatability and defects in patterned wafers. Since IBM's official announcement on Copper Dual Damascene(Cu2D) technology, the semiconductor world has been engaged in a Cu2D race. Today, even after~3years of extensive R&D work, the End-of-Line(EOL) yields are still too low to allow the transition of technology to manufacturing. One of the reasons behind this is the myriad of defects associated with Cu technology. Especially, dishing and erosion defects increase the resistance because they decrease the interconnection section area, and ultimately reduce the lifetime of the semiconductor. Methods to reduce dishing & erosion have recently been interface hardness of the pad, optimization of the pattern structure as dummy patterns. Dishing & erosion are initially generated an uneven pressure distribution in the materials. These defects are accelerated by free abrasive and chemical etching. Therefore, it is known that dishing & erosion can be reduced by minimizing the abrasive concentration. Minimizing the abrasive concentration by using Ce$O_2$ is the best solution for reducing dishing & erosion and for removal rate. This paper introduce dishing & erosion generating mechanism and a method for developing a semi-rigid abrasive pad to minimize dishing & erosion during CMP.

• Journal of Welding and Joining
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• v.32 no.3
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• pp.11-18
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• 2014

TSV(through silicon via) filling technology is making a hole in Si wafer and electrically connecting technique between front and back of Si die by filling with conductive metal. This technology allows that a three-dimensionally connected Si die can make without a large number of wire-bonding. These TSV technologies require various engineering skills such as forming a via hole, forming a functional thin film, filling a conductive metal, polishing a wafer, chip stacking and TSV reliability analysis. This paper addresses the TSV filling using Cu electrodeposition. The impact of plating conditions with additives and current density on electrodeposition will be considered. There are additives such as accelerator, inhibitor, leveler, etc. suitably controlling the amount of the additive is important. Also, in order to fill conductive material in whole TSV hole, current wave forms such as PR(pulse reverse), PPR(periodic pulse reverse) are used. This study about semiconductor packaging will be able to contribute to the commercialization of 3D TSV technology.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.106.1-106.1
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• 2012

EBSD(Electron BackScattered Diffraction)분석은 주사전자현미경에서 관찰되는 비교적 넓은 영역의 결정 방위를 측정하여 집합조직을 해석하는 동시에 결정 방위의 변화를 기준으로 결정립계를 구분 지어 미세조직의 정량 분석도 가능하기 때문에 많은 연구자들이 사용하고 있다. 그러나 EBSD의 Kikuchi 패턴은 시편 표면으로부터 30~50nm 깊이 범위의 표면층으로부터 방출되기 때문에 EBSD 분석 결과는 시편의 표면 처리 상태에 크게 영향을 받아 적절한 시편준비법이 요구된다. 시편 준비 과정 중에 생기는 변형층, 산화층이나 오염층이 10nm 이내로 제어되지 못하면 명확한 패턴을 얻지 못하여 분석이 어려운 경우가 많으므로, 시료의 절단과 연마 과정 중에 변형층을 되도록 적게 만들고 표면의 산화나 오염을 최대한 방지해야 한다. 또한 EBSD 분석 특성상 시편을 70도로 기울이기 때문에 시편의 요철이 심하면 볼록한 영역에 의해 오목한 영역의 패턴이 가려져 결정방위 정보를 얻기 힘들다. 이런 이유로 시편을 최대한 평평하게 하고 요철이 생기지 않게 시편 준비를 하는 것이 관건이다. 금속재료의 EBSD 시편준비법으로는 일반적으로 기계적 연마법과 전해연마법이 주로 쓰인다. 경한 석출물이나 개재물이 연한 기지에 분산되어 있는 시편이나 이종 소재 접합재의 경우는 전해연마법을 사용하면 특정 상(혹은 합금)이 먼저 연마되어 큰 단차가 생기거나 석출물에 의해 요철이 심해져서 정량적인 EBSD 분석이 어렵게 된다. 이 연구에서는 시편 준비가 어렵다고 알려진 다상 금속재료에서의 EBSD 분석 사례를 소개한다. Ti-6Al-4Fe-0.25Si 시효처리합금, 알루미늄 기지 복합재료, 마찰교반용접한 알루미늄-타이타늄합금의 EBSD 시편준비법과 그 분석 결과를 고찰한다.

• Transactions on Electrical and Electronic Materials
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• v.12 no.4
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• pp.131-134
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• 2011

Back-end-of-line using ultra low-k (ULK; k < 2.5) has been required to reduce resistive capacitance beyond 45 nmtechnologies, because micro-processing units need higher speed and density. There are two strategies to manufacture ULK inter-layer dielectric (ILD) materials using an air-gap (k = 1). The former ULK and calcinations of ILD degrade the mechanical strength and induce a high cost due to the complication of following process, such as chemical mechanical polishing and deposition of the barrier metal. In contrast, the air-gap based low-k ILD with a relatively higher density has been researched on the trench-type with activity, but it has limited application to high density devices due to its high air-gap into the next metal layer. The height of air-gap into the next metal layer was reduced by changing to the via-typed air-gap, up to about 50% compared to that of the trench-typed air-gap. The controllable ULK was easily fabricated using the via-typed air-gap. It is thought that the via-type air-gap made the better design margin like via-patterning in the area with the dense and narrow lines.

• Journal of Korean Society on Water Environment
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• v.22 no.3
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• pp.437-443
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• 2006

The Water usage is relationship which is close with the administrative cost from industrial facility. It is not easy to reduce a water usage. This research is the optimization of the waste water quantity which process waste water integration of the standard thermal power plant in system operate time. The turbine rotates by force of the steam and it produces an electricity. Demineralization Water is manufacture purity manufacturing equipment and it is supplied in power plant channel. We knew a possibility of reducing from pure control process. When it is reduced the Back Washing time, Rinsing time of the gravity filter and the activated carbon filter. Also, It is possible even from regeneration phase in Condensate Polishing Demineralization System. In addition, There is also the water which the drain of the sampling water for watching the condition of power plant process will be able to use. Integrates these processes it will be able to reduce an annual 30,000 ton degree. The research is want to use the fundamental data for the water curtailment of the power plant.

• The Journal of Korean Academy of Prosthodontics
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• v.38 no.3
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• pp.336-347
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• 2000

Statement of problem. Luster loss in esthetic anterior ceromer restoration can occur and can be related with rough surface texture. Understanding durability of surface finishing methods like polishing and surface coating have critical importance. Purpose. This study evaluated the effect of tooth brushing and thermal cycling on surface luster of 3 ceromer systems (Artglass, Targis, Sculpture) treated with different surface finishing methods. Material and methods. Seventy-two samples were prepared: 12 for control group Z100, 12 for Artglass, 24 for Targis, and 24 for Sculpture. Half of the Targis and Sculpture were polished according to the manufacturer's recommendation. The rest of the samples were coated with staining and glazing solution for Targis and Sculpture, respectively. All specimens were subjected to 10,000 cycles between $5^{\circ}C\;and\;55^{\circ}C$ with 30 seconds dwell time. Tooth brushing abrasion tests were performed in a customized tooth brushing machine with 500g back and forth for 20,000 cycle. Luster comparisons were based on grading after direct observation, and light reflection area was measured with Image analysis software. Results. All materials showed an decrease in luster grade after thermal cycling and tooth brushing. The post-tooth brushing results revealed that the glazed Sculpture had greater mean luster grade than did any other groups. While, the stained Targis group showed greatest changes after tooth brushing (p < 0.05), polished Targis and Sculpture did not show significant changes. However, glazed Sculpture showed discretely fallen out glaze resin. Conclusion. From the results of this study, all of the ceromer specimens were much glossy than control composite group after tooth brushing. coatings used for Targis and Sculpture had not durability for long term use.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.176-180
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• 2001

There are several factors causing re-work in CMP process such as improper polish time calculation by operator. removal rate decline of the polisher, unstable in-suit pad conditioning, slurry supply module problem and wafer carrier rotation inconsistancy. And conclusively those fundimental reason for the re-work rate increasement is mainly from the cycle time delay between wafer polish and post measurement. Therefore, Wafer thickness measurement in wet condition could be able to remove those improper process conditions which may happen during the process in comparison with the conventional dried wafer measurement system and it can be able to reduce the CMP process cycle time. CMP scrap reduction by overpolish, re-work rate reduction, thickness control efficiency also can be easily achieved. CMP Equipment manufacturer also trying to develop integrated system which has multi-head & platen, cleaner, pre & post thickness measure and even control the polish time from the calculated removal rate of each polishing head by software. CMP re-work problem such as over & under polish by target thickness may result in the cycle time delay. By reducing those inefficient factors during the process and establish of the automatic process control, CLC system need to be adopted to maximize the process performance. Wafer to Wafer Polish Time Feed Back Control by measuring the wafer right after the polish shorten the polish time calculation for the next wafer and it lead to the perfact Post CMP target thickness control capability. By Monitoring all of the processed the wafer, CMP process will also be stabilize itself.

• Transactions on Electrical and Electronic Materials
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• v.7 no.3
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• pp.112-117
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• 2006

In this paper we present that the effects of polymer adsorption on stabilities and CMP performance of ceria abrasive particles. Characterization of ceria abrasive particles in the presence of poly(vinyl pyrrolidone) (PVP) was performed by the measurements of adsorbed amounts of PVP, average sizes, and the back scattering intensities of the ceria abrasive particles as functions of PVP molecular weight and PVP concentration. The ceria abrasive particles in the presence of PVP were used to polish $SiO_2\;and\;Si_3N_4$ films deposited on Si wafers in order to understand the effect of PVP adsorption on chemical mechanical polishing (CMP) performance, together with ceria abrasive particles without PVP. Adsorption of PVP on the ceria abrasive particles enhanced the stability of ceria abrasive particles due to steric stabilization of the thick adsorbed layer of PVP. Removal rates of the deposited $SiO_2\;and\;Si_3N_4$ films by the ceria abrasive particles in the presence of PVP were much lower than those in the absence of PVP and their magnitudes were decreased with an increase in the concentration of free PVP chains in the dispersion media. This suggests that the CMP performance in the presence of PVP could be mainly controlled by the hydrodynamic interactions between the adsorbed PVP chains and the free ones. Moreover, the molecular weight dependence of PVP on the removal rates of the deposited films was hardly observed. On the other hand, high removal rate selectivity between the deposited films in the presence of PVP was not observed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.176-180
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• 2001

There are several factors causing re-work in CMP process such as improper polish time calculation by operator, removal rate decline of the polisher, unstable in-suit pad conditioning, slurry supply module problem and wafer carrier rotation inconsistency. And conclusively those fundimental reason for the re-work rate increasement is mainly from the cycle time delay between wafer polish and post measurement. Therefore, Wafer thickness measurement in wet condition could be able to remove those improper process conditions which may happen during the process in comparison with the conventional dried wafer measurement system and it can be able to reduce the CMP process cycle time. CMP scrap reduction by overpolish, re-work rate reduction, thickness control efficiency also can be easily achieved. CMP Equipment manufacturer also trying to develop integrated system which has multi-head & platen, cleaner, pre & post thickness measure and even control the polish time from the calculated removal rate of each polishing head by software. CMP re-work problem such as over & under polish by target thickness may result in the cycle time delay. By reducing those inefficient factors during the process and establish of the automatic process control, CLC system need to be adopted to maximize the process performance. Wafer to Wafer Polish Time Feed Back Control by measuring the wafer right after the polish shorten the polish time calculation for the next wafer and it lead to the perfect Post CMP target thickness control capability. By Monitoring all of the processed the wafer, CMP process will also be stabilize itself.