• Journal of the Korean Ceramic Society
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• v.45 no.11
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• pp.701-706
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• 2008

High frequency dielectric ceramics have potential for applications in mobile and satellite communications systems at frequencies higher than 10GHz. The Ba$(Zn_{1/3}Ta_{2/3})O_3$ ceramics are known to have a high quality factor, a small temperature coefficient of the resonance frequency and a high dielectric constant. On the other hands, sintering at high temperature for extended time is required to obtain the ordered structure for high quality factor. In this study, the microwave dielectric properties of $ZrO_2$ and NiO-added Ba$(Zn_{1/3}Ta_{2/3})O_3$ ceramics prepared by solid-state reaction have been investigated. Adding $ZrO_2$ and NiO could effectively promote the densification even the case of decreasing the sintering time. At the surface of samples, secondary phase of Ba-Ta compounds was formed possibly due to the evaporation of ZnO, however, the interior of the samples remained as pure Ba$(Zn_{1/3}Ta_{2/3})O_3$. The samples sintered at $1600^{\circ}C$ for 2h exhibited 1:2 ordering of Zn and Ta cations. Excellent microwave dielectric properties of $Q{\cdot}f$(>96,000 GHz) and ${\varepsilon}_r$=30 has been obtained.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.374-374
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• 2009

We have fabricated pure YBCO films and $BaZrO_3$ doped ones on $CeO_2$ buffered YSZ single crystal substrates using rf-sputtering method. In this work, pure YBCO and 2 vol% BZO doped YBCO target were used to investigate the flux pinning properties of BZO doped YBCO films compared to undoped ones. BZO nanodots within the superconducting materials was known to comprise the self-assembled columnar defects along the c-axis from the bottom of YBCO films up to the top surface, thus can be a very strong pinning sites in the applied magnetic field parallel to them. We will discuss the possibility of growing self-assembled columnar defects in the rf-sputtering method. It is speculated that BZO and YBCO phases can separate and BZO form nanodots surrounded by YBCO epitaxial layers and continuous phase separation and ordering between these two materials, which was well studied in Pulsed Laser Deposition method. For this purpose, some severe experimental conditions such as on-axis sputtering, shorter target-substrate distance, high rf-power, etc was adopted and their results will be presented.

• Journal of Hydrogen and New Energy
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• v.22 no.5
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• pp.649-655
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• 2011

Methane direct cracking can be utilized to produce $CO_x$ and $NO_x$-free hydrogen for PEM fuel cells, oil refineries, ammonia and methanol production. We present the results of a systematic study of methane direct cracking using a mixed conducting oxide, Y-doped $BaZrO_3$ ($BaZr_{0.85}Y_{0.15}O_3$), membrane. In this paper, dense $BaZr_{0.85}Y_{0.15}O_3$ membrane with disk shape was successfully sintered at $1400^{\circ}C$ with a relative density of more 93% via addition of 1 wt% ZnO. The ($BaZr_{0.85}Y_{0.15}O_3$) membrane is covered with Pd as catalyst for methane decomposition with an DC magnetron sputtering method. Reaction temperature was $800^{\circ}C$ and high purity methane as reactant was employed to membrane side with 1.5 bar pressure. The $H_2$ produced by the reaction was transported through mixed conducting oxide membrane to the outer side. In addition, it was observed that the carbon, by-product, after methane direct cracking was deposited on the Pd/ZnO-$BaZr_{0.85}Y_{0.15}O_3$ membrane. The produced carbon has a shape of sphere and nanosheet, and a particle size of 80 to 100 nm.

• Proceedings of the Korean Ceranic Society Conference
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• 2002.10a
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• pp.65.2-65
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• 2002

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05c
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• pp.75-78
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• 2002

The dielectric properties for Ni electrode multilayer ceramic chip capacitor for Y5V has been studied with $(Ba_{0.93}Ca_{0.07})_m(Ti_{0.82}Zr_{0.18})O_2+MnO_2$ 0.2wt%, $Y_2O_3$ 0.18wt%, $SiO_2$ 0.15wt%, glass frit 1 wt% composition. The m ratio in the range of 1.006 ~ 1.012 have dielectric constant 9,500 ~ 14,500 and insulation resistance 390 ~ 460 $G{\Omega}$. Using the dielectrics, nikel electrode multilayer chip capacitor with Y5V, 104Z in EIA 0603 size specific capacitance were developed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.6
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• pp.356-360
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• 2017

We investigated the phase evolution, microstructure, and microwave dielectric properties of Na- and Zr-doped $Ba(Mg_{0.5}W_{0.5})O_3$ [i.e., ($Ba_{1-2x}Na_{2x})(Mg_{0.5-x}Zr_xW_{0.5})O_3$] ceramics. $BaWO_4$ as a secondary phase was observed in all compositions, and it increased as the dopant concentration increased. All specimens revealed a dense microstructure. For the composition of x=0.01, polyhedral grains were observed. As the dopant concentration increased, the densification and the grain growth were promoted by a liquid phase. The quality factor($Q{\times}f_0$) decreased remarkably, whereas the dielectric constant (${\varepsilon}_r$) tended to decrease as the dopant concentration increased. The dielectric constant, quality factor, and temperature coefficient of the resonant frequency of the composition of x=0.01 sintered at $1,700^{\circ}C$ for 1 h were 18.6, 216,275 GHz, and $-22.0ppm/^{\circ}C$, respectively.

• Korean Journal of Materials Research
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• v.3 no.5
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• pp.546-552
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• 1993

본 연구에서는 입계의 성질을 이용한 PTCR 재료에 입계 modifier로서 $Bi_{2}$$O_{3}$와 BN을 첨가하고 입계의 미세구조와 결함농도를 변화시켜 이에 따른 소결 및 전기적 특성변화를 TMA, XRD, 복합 임피던스방법 등을 이용하여 해석하였다. 실험 결과 Y이 도우핑된 BaT$iO_{3}$ PTCR 재료에 $Bi_{2}$$O_{3}$를 첨가하였을때 약 0.1mol%까지 고용이 되는 것으로 밝혀졌다. $Bi_{2}$$O_{3}$를 고용한계 이하로 첨가시에는 생성되는 vacancy등의 결함으로 말미암아 Y-BaT$iO_{3}$의 치밀화가 촉진되었으나, 그 이상 첨가하면 치밀화 뿐만 아니라 결정립 성장도 억제되었다.$Bi_{2}$$O_{3}$ 결정립 내부에 Ba와 Ti vacancy가 동시에 생길 수 있어 고온저항이 높아짐을 알 수 있었다. BN은 BaT$iO_{3}$에 고용이 되지 않는 것으로 밝혀졌으며 $B_{2}$O/wub/3를 주성분으로한 액상형성으로 인하여 저온에서의 급격한 치밀화가 관찰되었다. 또 Ba-Y-Ti-B-O의 비정질 상이 tripie junction에 존재함으로서 상온저항이 크게 변화하였으며, PTCR jump도 높아졌다.

• Proceedings of the Korean Ceranic Society Conference
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• 2003.04a
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• pp.110.2-110
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• 2003

• Journal of the Korean Ceramic Society
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• v.38 no.11
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• pp.1042-1045
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• 2001

Microwave dielectric properties of Ba(Zn$_{1}$3/Nb$_{2}$3/) $O_3$-Sr(Zn$_{1}$3/Nb$_{2}$3/) $O_3$(BZN-SZN) system were investigated as a function of sintering temperature and Zr $O_2$content. Density was increased and the temperature coefficient of resonant frequency (TCF, $\tau$$_{f}$) decreased with increasing sintering temperature. However dielectric constant (K) and Q$\times$f value did not change markedly with the sintering temperature. For the samples sintered at the same temperature, density, dielectric constant, and Q$\times$f value were increased and TCF was decreased with increasing Zr $O_2$concentration. Especially, the dielectric constant of the sample increased with x and exhibited the maximum value ($\varepsilon$$_{r}$=41) when x=0.6 at 1575$^{\circ}C$ sintered. TCF decreased with x and exhibited the minimum value ($\tau$$_{f}$=+0.8ppm/$^{\circ}C$) when x=1.0..0.

• Electrical & Electronic Materials
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• v.10 no.10
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• pp.1041-1047
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• 1997

In this paper the dielectric properties of (0.8-x)Pb(Mb$_{1}$3//Nb/2/3)O$_3$/BaTiO$_3$-CaZrO$_3$(x=0.1, 0.15, 0.2, 0.25) ceramics were investigated. Specimens were prepared by the conventional mixed oxide method and sintering temperature and time were 1000~115$0^{\circ}C$ 2hr, respectively. The structural and dielectric properties with variation of sintering temperature and composition were investigated. All the specimens sintered at 115$0^{\circ}C$ for 2hr showed the highest value of 1043. With increasing the contents of CZ and frequency dielectric constant was decreased and which was decreased with increasing temperature from 3$0^{\circ}C$ to 15$0^{\circ}C$.