• Journal of the Korean Ceramic Society
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• v.39 no.11
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• pp.1017-1022
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• 2002

$(Ba_{1-x}Ca_x)(Ti_{1-y}Zr_y)O_3(BCTZ)$ powders for the Ni-electrode Multilayer Ceramic Capacitor(MLCC) were synthesized via hydrothermal treatment using mixed aqueous solutions of $BaCl_2{\cdot}2H_2O,\Ca(NO_3)2{\cdot}4H_2O,\ ZrOCl_2{\cdot}8H_2O$ and $TiCl_4$. Two component and three component systems were also extensively studied for basic data. BT, CT and BZ powders were crystalline but CZ was determined to be amorphous under the same synthetic condition. In BTZ system, Zr and Ti were completely soluble and Ca would be substituted for Ba up to ∼6 mol% in BCT. The submicron-sized $(Ba_{0.95}Ca_{0.05})(Ti_{0.80}Zr_{0.20})O_3$ powder of the target composition was successfully synthesized at $150{\circ}$ for 12h.

• Journal of the Korean Ceramic Society
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• v.28 no.11
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• pp.935-941
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• 1991

Effects of calcination process and ZrO2 addition on the electrical properties of [(Ba0.82Sr0.08Ca0.1)O]m(Ti1-$\chi$Zr$\chi$)O2 ceramics have been investigated. With the variation of A/B-site ratio m of the dielectric formulations, sintering behavior and the resistivity after sintering in a reducing atmosphere have been affected by the calcination process. When the dielectric formulations of m=1.01 were sintered in a reducing atmosphere, the room-temperature resitivity of 109 {{{{ OMEGA }}.cm was obtained for samples processed with two-step calcination, which was much lower than 1012 {{{{ OMEGA }}.cm of samples calcined once. It was confirmed that high resistivity of Ca-doped BaTiO3 ceramics, after sintering in a reducing atmosphere, is maintained by acceptor-like behavior of CaTi" which is formed by Ca substitution to Ti-site. It was also found out that the critical amount of B-site Ca substitution for reduction inhibition of BaTiO3 is around 0.005 mol. With the increasing amount of ZrO2 addition to dielectric formulations, Curie peak was depressed and Curie temperature was lowered due to the enhanced diffuse phase transition.tion.

• Proceedings of the KIEE Conference
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• 1991.11a
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• pp.325-328
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• 1991

In this study, $0.085Ba(La_{1/2}Nb_{1/2})O_3-0.915Pb(Zr_yTi_{1-y})O_3$(y=0.45, 0.50, 0.55, 0.60, 0.65[mol]) transparent electrooptic ceramics were fabricated by two-stage sintering method. Increasing the $PbZrO_3$ contents, dielectric constant was increased and Curie temperature was decreased. In the composition of 0.55[mol] $PbZrO_3$, electromechanical coupling factor was 0.43. From the results of ferroelectric hysteresis loop and transmitted light intensity with electric field, the compositions of 0.65, 0.60, 0.55[mol] $PbZrO_3$ was applicable to electroopticmemory device and the compositions of 0.50, 0.45[mol] $PbZrO_3$ was applicable to linear electrooptic device.

• Journal of the Korean Ceramic Society
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• v.38 no.2
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• pp.117-121
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• 2001

본 연구에서는 Zr $O_2$첨가가 Ba(Zn$_{1}$3/Ta$_{2}$3/) $O_3$(BZT)세라믹의 구조와 고주파 유전특성에 미치는 영향을 조사하였다. 모든 시료에서 $Ba_{5}$Ta$_4$ $O_{15}$ 이차상이 발견되었으며 Zr $O_2$의 첨가량이 증가하면 $Ba_{5}$Ta$_4$ $O_{15}$ 상의 양은 감소하였다. 반면에 Zr $O_2$의 첨가량이 1.5 mol% 이상인 시료에서는 $Ba_{0.5}$Ta $O_3$상이 발견되었다. BZT의 입자 크기는 약 1$mu extrm{m}$ 정도였지만, Zr $O_2$를 첨가하면 입자 크기가 증가하였다. SEM 및 TEM 분석에 의하여 Zr $O_2$가 첨가되면 액상이 존재하는 것을 알 수 있었으며, 이로 인하여 입자가 성장되는 것이 발견되었다. 시편의 밀도는 소량의 Zr $O_2$를 첨가하면 증가하지만 Zr $O_2$첨가량이 증가하면 감소하였다. 유전율은 모든 시료가 27에서 30 사이의 값을 가지고 있었다. 공진주파수 온도계수는 소량의 Zr $O_2$을 첨가하였을 때는 변화하지 않았지만 첨가량이 2.5 mol% 이상에서는 증가하였다. Q$\times$f 값은 Zr $O_2$을 첨가하면 증가하였고, 입자 성장이 완료되는 조성에서 최대 값을 보였다. 본 연구에서는 Zr $O_2$를 2.0 mol% 첨가하고 15$50^{\circ}C$에서 10시간 소결한 시료에서 최대의 Q$\times$f 값(164,000)을 얻을 수 있었다.다.다.

• Korean Journal of Materials Research
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• v.10 no.9
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• pp.607-611
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• 2000

Zr modified $(Ba_{1-x},Sr_x)TiO_3$ thin films as capacitor for high density DRAM were deposited by r.f. magnetron sputtering. The films deposited at various chamber pressure exhibited a polycrystalline structure. The Zr/Ti ratio of the films increased significantly with decreasing the chamber pressure and this variation affected the microstructure and surface roughness of films When chamber pressure increased dielectric constant of the films effected due to decrease of Zr. The thin films prepared in this study show dielectric constant of 380 to 525 at 100KHz. The variation of capacitance and polarization measured as a function of bias voltage suggested that all films were paraelectric phases. Leakage current exhibited smaller value as chamber pressure decrease and the leakage current density of the films deposited above 10mTorr was $10^{-7}~10^{-8}A/cm^2$ order at 200kV/cm. $(Ba_{1-x},Sr_x)(Ti_{1-y},Zr_y)O_3$ thin films in this study appeared to be potential thin film capacitor for high density DRAM.

• Electrical & Electronic Materials
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• v.6 no.3
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• pp.241-247
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• 1993

본 연구에서는 투광성 0.085Ba(L $a_{1}$2/N $b_{1}$2/) $O_{3}$- 0.915Pb(Z $r_{y}$ $Ti_{1-y}$) $O_{3}$(0.45.leq.y.leq.0.70)세라믹을 2단 소성법으로 제작한 후, PbZr $O_{3}$조성 및 온도에 따른 구조적, 강유전적특성을 측정하였다. XRD측정 결과, PbZr $O_{3}$조성이 감소할수록 결자상수 및 단위격자 체적은 감소하였으며 시편의 결정구조는 입방정계에서 능면체정계, 정방정계로 변화되었다. 8.5/60/40시편의 경우 포화분극, 잔류분극 및 항전계가 각각 33.28[.mu.C/$cm^{2}$], 4.15[kV/cm]로 전형적인 메모리 특성을 나타내었으며 PbZr $O_{3}$조성이 증가함에 따라 강유전 이력곡선은 slim loop특성을 나타내었다. 잔류분극은 온도가 증가함에 따라 감소하였으며 특히 PE-FE상경계 부근에 위치한 조성의 경우, 상전이 온도 이하의 온도에서 급격히 감소하는 경향을 나타내었다.다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.42-45
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• 2001

$(Ba_{0.6}Sr_{0.4}Ca_{x})TiO_{3}+yZrO_{2}$ wt% (x=0.10, 0.15, 0.20, y=0.5~3.0) specimens were fabricated by the mixed-oxide method and then the structural and dielectric properties as a function of the composition ratio and $ZrO_2$ contents were studied. All BSCT specimens showed dense and homogeneous structure without the presence of the seconds phase. The Curie temperature and the dielectric constant at room temperature decreased with increasing the Ca/Ba composition ratio and $ZrO_2$ content. The BSCT(50/40/10) specimens showed the excellent tunability property. And the tunability were increased with increasing the contents of $ZrO_2$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.42-45
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• 2001

(Ba$_{0.6-x}$Sr$_{0.4}$Ca$_{x}$)TiO$_3$+yZrO$_2$wt% (x=1.10, 0.15, 0.20, y=0.5~3.0) specimens were fabricated by the mixed and ZrO$_2$ contents were studied. All BSCT specimens contents were studied. All BSCT specimens showed dense and homogeneous structure without the presence of the seconds phase. The Curie temperature and the dielectric constant at room temperature decreased with increasing the Ca/Ba composition ratio and ZrO$_2$ content. The BSCT(50/40/10) specimens showed the excellent tunability property. And the tunability were increased with increasing the contents of ZrO$_2$./TEX>.

• Journal of the Korean Ceramic Society
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• v.31 no.6
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• pp.651-659
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• 1994

BaTiO3 ceramics were sintered on Al2O3, MgAl2O4, MgO and Mg-, Ca-, Y-stabilized zirconia setters. Then the influence of setters on the microstructure of BaTiO3 ceramics and the stability of setters were investigated by SEM, EDAX and XRD analyses. The microstructure of BaTiO3 ceramics sintered on Al2O3, MgAl2O4, MgO and Mg-PSZ showed large grain growth, but little grain growth on Ce-TZP(Tetragonal Zirconia Policrystal). Mg-PSZ(Partially Stabilized Zirconia), Ca-PSZ, Ce-TZP setters showed extensive phase transformation. Y-TZP and fused Y-SZ (Stabilized Zirconia) setters were stable. The liquid sintering aids of BaTiO3 ceramics accelerate mass transport. The reaction of SrTiO3 in BaTiO3 with ZrO2 resulted in the formation of SrZrO3.

• Journal of the Korean Ceramic Society
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• v.40 no.5
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• pp.415-422
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• 2003

BaZr $O_3$-based proton conductors in which B-site cations are partially substituted by Ce and Yb were fabricated by a solid state reaction method. The electrical properties of the specimens were measured by using impedance analyzer in dry air and wet air atmospheres. The electrical conductivity showed higher value in wet air than in dry air at below $600^{\circ}C$. As the Ce content increased, the electrical conductivity increased. Among four compositions, BaZ $r_{0.8}$C $e_{0.15}$Y $b_{0.05}$ $O_3$$_{-{\delta}}$ specimen showed the highest electrical conductivity,1.72$\times$10$^{-3}$ S$cm^{-1}$ /, at 80$0^{\circ}C$. In the low temperature region, the electrical conductivity was higher in wet air than in dry air. However, as the temperature increased, the proton conductivity reduced and thus the electrical conductivity showed similar value at approximately $700^{\circ}C$.