• E2M - 전기 전자와 첨단 소재
• /
• 제3권1호
• /
• pp.20-28
• /
• 1990

Pb(Zr, Ti)O$_{3}$-Pb(Ni, Nb)O$_{3}$계 세라믹스에 Ba를 치완시켜 Ba치환량의 증가에 따른 유전율, 전기기계결합계수 및 압전 d정수의 변화를 고찰하였다. 또한 Ba치환에 따른 세라믹스 소자의 송신감도 특성을 조사하고 큐리온도 이동에 따른 온도안정성을 고려하여 초음파 송신기용 압전소자에 응용가능함을 보였다.

• Transactions on Electrical and Electronic Materials
• /
• 제14권2호
• /
• pp.78-81
• /
• 2013

$0.95(Na_{0.5}K_{0.5})NbO_3-0.05BaTiO_3+0.2wt%\;Ag_2O$ (hereafter, No excess NKN) ceramics and $0.95(Na_{0.5}K_{0.5})NbO_3-0.05BaTiO_3+0.2wt%\;Ag_2O$ with excess $(Na_{0.5}K_{0.5})NbO_3$ (hereafter, Excess NKN) were fabricated by the conventional solid state sintering method, and their phase transition properties and dielectric properties were investigated. The crystalline structure of No excess NKN ceramics and Excess NKN ceramics were shown characteristics of polymorphic phase transition (hereafter, PPT), especially shift from the orthorhombic to tetragonal phase by increasing sintering temperature range from $1,100^{\circ}C$ to $1,200^{\circ}C$. Also, the temperature coefficient of capacitance (hereafter, TCC) of No excess NKN ceramics and Excess NKN ceramics from $-40^{\circ}C$ to $100^{\circ}C$ was measured to evaluate temperature stability for applications in cold regions. The TCC of No excess NKN and Excess NKN ceramics showed positive TCC characteristics at a temperature range from $-40^{\circ}C$ to $100^{\circ}C$. Especially, Excess NKN showed a smaller TCC gradient than those of Excess NKN ceramics in range from $-40^{\circ}C$ to $100^{\circ}C$. Therefore, NKN piezoelectric ceramics combined with temperature compensated capacitor having negative temperature characteristics is desired for usage in cold regions.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1998년도 추계학술대회 논문집
• /
• pp.251-254
• /
• 1998

The ($0.8BaTiO_3-0.1SrTiO_3-0.1MgTiO_3$)+$0.006Nb_2O_5$ ceramics were fabricated by conventional ceramic process. The dielectric property of specimen was investigated that the specimen was sintering temperature at 1,300C for 3hours and then annealed at $1,100^{\circ}C$ for 3hours in a atmosphere (air) to be painted on the surface with CuO paste. The results of the temperature and frequency are varied, the dielectric constant and loss tangent are unsuitable for BL capacitor. The dielectric constants were varied to be negative temperature coefficient(2.000-3,000) in the temperature range between -10 and $140^{\circ}C$, the dissipation factors (tan $\delta$) were some high(0.1-0.3). It was not grain insulation, in cause of the some difficult to be annealed temperature with CuO paste and fired atmosphere. But, we have some different annealing temperature and fired atmosphere, it will be suitable BL(Boundary Layer)capacitor.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 유기절연재료 전자세라믹 방전플라즈마 일렉트렛트 및 응용기술
• /
• pp.75-78
• /
• 2002

The dielectric properties for Ni electrode multilayer ceramic chip capacitor for Y5V has been studied with $(Ba_{0.93}Ca_{0.07})_m(Ti_{0.82}Zr_{0.18})O_2+MnO_2$ 0.2wt%, $Y_2O_3$ 0.18wt%, $SiO_2$ 0.15wt%, glass frit 1 wt% composition. The m ratio in the range of 1.006 ~ 1.012 have dielectric constant 9,500 ~ 14,500 and insulation resistance 390 ~ 460 $G{\Omega}$. Using the dielectrics, nikel electrode multilayer chip capacitor with Y5V, 104Z in EIA 0603 size specific capacitance were developed.

• 세라미스트
• /
• 제23권1호
• /
• pp.101-109
• /
• 2020

In this study, the phase transition behaviors of lead-free (Na_1/2Bi_1/2TiO₃)_(1-x)-(BaTiO₃)_x (NBT-BT) are investigated by using Brillouin spectroscopy. The elastic properties, sound velocity and absorption coefficient of NBT-BT are characterized as a function of temperature along different crystallographic axes. The temperature dependences of the elastic constants of NBT-BT near the morphotropic phase boundary are determined for the first time. The unpoled NBT-BT single crystals exhibits the typical relaxor behaviors, presenting broad acoustic and dielectric anomalies. The application of electric field induced discontinuous changes in the elastic properties at ~110℃, which indicates field-induced phase transition occurred. The electric field also changes the dielectric constant from more relaxor-like to ferroelectric-like dielectric behavior.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1994년도 추계학술대회 논문집 학회본부
• /
• pp.196-198
• /
• 1994

The dielectric and electrical properties of $Pb(Mg_{1/3}Nb_{2\3})O_3-PbTiO_3-BaTiO_3$ have been investigated. Perovskite crystalline phase of the specimens are confirmed by XRD at $1270^{\circ}C$. The curie temperature is around $40^{\circ}C$ with the amount of $BaTiO_3$ and $PbTiO_3$. Every specimens shows the slim loop hysteresis curves which is electrostrictive characteristic. The strain vs. applied voltage characteristics exhibits nonlinear relationship, and the specimen of 0.85PMN-0.125PT-0.025BT shows the largest strain.

• E2M - 전기 전자와 첨단 소재
• /
• 제8권3호
• /
• pp.267-271
• /
• 1995

The electrical properties of (S $r_{0.50}$P $b_{0.25}$B $a_{0.25}$)Ti $O_{3}$ ceramics were studied. Specimens were prepared by the conventional mixed oxide method, and fired between 1300[.deg. C] - 1375[.deg. C], for 2[hr.]. The electrical and structural preperties of specimens were investigated with sintering temperature. Increasing the sintering temperature from 1300[.deg. C] to 1375[.deg. C], average grain size was increased from 2.61[.mu.m] to 4.53[.mu.m]. (S $r_{0.50}$P $b_{0.25}$B $a_{0.25}$)Ti $O_{3}$ specimen sintered at 1350[.deg. C] for two hours showed good dielectric constant(2147) and dielectric loss(1.7[%]) properties at 1[khz]. Sintered density and breakdown field strength were the highest value of 5.75[g/c $m^{3}$], 20[kV/cm], respectively. Dielectric properties with applied voltage were independent of the sintering temperature.temperature.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1997년도 춘계학술대회 논문집
• /
• pp.289-292
• /
• 1997

BaTiO$_3$thin film capacitor were prepared on Pt(100)/SiO$_2$/Si(100)wafer by RF sputtering technique. Dielectric and electrical characteristics of the thin film capacitor are investigated. The Dielectric constant and loss were about 683 and 5[%], respectively. We found that the leakage current of thin film capacitor is depend on RF power during deposition. Because of increase of activation energy, leakage current inclosed at high RF power and sheet resistivity of the films was decreased. Swithching voltage of thin film capacitor was 4.4[V]

• 한국세라믹학회지
• /
• 제23권6호
• /
• pp.66-70
• /
• 1986

The calcining temperature ranging from 900$^{\circ}C$ to 1300$^{\circ}C$ affected on the planar coupling factor and resonance characteristics of BaTiO3 ceramics doped with 0.2 wt% MnO2 have been investigated. Dielectric constant planar coupling factor and anti-resonance frequency of the sample increased with the calcining temperature up to 1,200$^{\circ}C$ and decreased above that temperature but the resonance frequency decreased slightly with the increasing calcining temperature. The planar coupling factor and anti-resonance frequency increased with the sintered density and dielectric constant while the resonance frequency was almost constant. The resonance and anti-resonance frequency increased with the sample temperature.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1997년도 추계학술대회 논문집
• /
• pp.158-162
• /
• 1997

In this paper, the electrical and dielectrical properties were investigated in Pb(Zr,Ti)O$_3$-Pb(Mn,Nb)O$_3$ ceramics which are manufactured with the substitution of Ba in site Pb. In older to increase the del and Kp , Ba was substitued to site Pb from 0 to 0.1 by 0.02 mol%. As the Ba substitution is increased, dielectric constant is increased and electricmachanical coupling factor showed the maximum value at Ba 0.06mol% and the mechanical qualify factor is decreased and the tetragonality and the grain size are decreased as the Ba substitution.