• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1995년도 추계학술대회 논문집
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• pp.5.2-8
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• 1995

0.15($Ba_{1-x}Sr_{x}$)O-$0.15Sm_2O_3$-$0.7TiO_2$(x=0∼9[m/o]ceramics were fabricated by mixed-oxide method. Microwave dielectric properties were investigated with sintering conditions aid Sr addictive. In the specimen with x=0[m/o] sintered at 1350∼1470[$^{\circ}C$], dielectric constant, quality factor and temperature coefficient of resonant frequency were 70∼74, 2800∼3300(at 3[GHz]), -1.33∼+l.66[ppm/$^{\circ}C$, respectively. Increasing the Sr additive from 0 to 5[m/o], dielectric constant and temperature coefficient of resonant frequency were increased and quality factor was decreased. In the specimen with x=r[m/o] sintered at 1375[$^{\circ}C$], 6[hr], dielectric constant, quality factor and temperature coefficient resonant frequency were 75.62, 2785(at 3[GHz]), +8.39[ppm/$^{\circ}C$], respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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• pp.1148-1151
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• 2002

Dielectric ceramics with nominal composition of $(Ba_{0.93}Sr_{0.07}O)-0.5Sm_2O_3-4.5TiO_2$ was prepared using the conventional mixed oxide process-derived powder. Effect of $SiO_2$, $MnO_2$ and $Al_2O_3$ impurity addition on the microwave properties was examined in some detail. Measured relative permittivity $(\varepsilon_r)$ values were in the range of 53 to 59 and showed little dependence on impurity addition. In contrast, quality factor $(Q{\cdot}f)$ and temperature coefficient of resonant frequency $(\tau_f)$ values were greatly influenced by the type and the amount of impurities. It was found that 0.1~0.2wt% addition of $Al_2O_3$ was most effective for improving the properties, where ${\varepsilon}_r$, $Q{\cdot}f$ and $\tau_f$ values were 57.7, 10000, and +7ppm/$^{\circ}C$, respectively.

• 한국전기전자재료학회논문지
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• 제16권3호
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• pp.195-201
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• 2003

The (Ba,Bi,Sr)TiO$_3$[BBST] thin films were fabricated on Pt/Ti/SiO$_2$ /Si substrate by RF sputtering method. The effects of Ar/O$_2$ ratio on the structural and dielectric properties of BBST thin films were investigated. Increasing the Ar/O$_2$ ratio, the intensity of BaBi$_4$Ti$_4$O$_{15}$ and Bi$_4$Ti$_3$O$_{12}$ peaks were increased but (Ba$_{0.5}$Sr$_{0.5}$)TiO$_3$ peak was decreased. In the BBST thin films deposited with condition of Ar/O$_2$(90/10) ratio, the composition ratio of the Ba, Bi and Sr atoms were 0.35, 0.25 and 0.4 respectively. The Bi and Ti atoms were diffused into the Pt layers. Increasing the Ar/O$_2$ ratio, the dielectric constant of the BBST thin films were increased but the dielectric loss of the BBST thin films were decreased. The dielectric constant and dielectric loss of the BBST deposited at 90/10 of Ar/O$_2$ ratio were 319 and 2.2%. respectively . Increasing the applied voltage, the capacitance of the BBST thin films were decreased.reased.

• 한국세라믹학회지
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• 제31권2호
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• pp.185-193
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• 1994

Effect of Sb2O3 addition on microstructure and the PTCR characteristic was investigated. The range of the Sb2O3 content and the sintering temperature showing semiconducting and PTCR characteristic, were 0.05~0.125 mol%, and over 130$0^{\circ}C$, respectively. We found that PTCR characteristic, that is, room-temperature resistivity and specific resistivity ration were dependent on the microstructure.

• 한국전기전자재료학회논문지
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• 제26권9호
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• pp.651-655
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• 2013

$(Ba_{0.85}Ca_{0.15})(Ti_{0.9}Zr_{0.1})O_3$ + 0.04 wt% $CeO_2$ lead-free ceramics were synthesized by conventional sintering process and the effect of calcination temperature on microstructure, dielectric and piezoelectric properties were investigated. Improved piezoelectric properties have been observed at $1,125^{\circ}C$ calcination temperature which show the optimal electrical properties, $k_p$~0.457, $d_{33}$~367 pC/N, $Q_m$~158 and $T_c$~$85^{\circ}C$. These results show that the piezoelectric properties can be improved by appropriate calcination temperature.

• 한국재료학회지
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• 제8권7호
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• pp.659-663
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• 1998

BaO.$Nd_{2}O_{3}$.$4TiO_{2}$세라믹스에서 Bi 치환위치 및 Bi 치환 량에 따른 상, 미세구조, 마이크로파 유전특성 등을 조사하였다. BaO.$Nd_{2}O_{3}$.$4TiO_{2}$ 세라믹스의 Nd 치환되어 $BaO.(Nd_{1-x}Bi_x)_2O_3.4TiO_2$고용체 (0$\leq$x$\leq$0.2)를 형성하였다. $BaO.(Nd_{1-x}Bi_x)_2O_3.4TiO_2$에서 Bi 치환 량이 x=0에서 x=0.2까지 증가됨에 따라 입자크기가 계속 증가하였으며, 유전상수는 84에서 108까지 계속 증가하였고, 공진 주파수의 온도계수는 $44 ppm^{\circ}C$에서 $-30ppm^{\circ}C$로 계속 감소하였다. $BaO.(Nd_{1-x}Bi_x)_2O_3.4TiO_2$조성에서 Bi 치환 량이 x=0.04에서 0.08사이일 때 가장 양호한 마이크로파 유전특성이 얻어졌으며 이 때의 유전상수 (${\varepsilon}_r$)는 89~92, Q, f는 5855-6091 GHz, 그리고 공진 주파수의 온도계수 (${\tau}_f$)는 -7.7-7.5 ppm/$^{\circ}C$이었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.30-30
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• 2008

Lead-free piezoelectric ceramics 0.97$(Na_{0.5}K_{0.5})NbO_3$-0.03Ba$(Ti_{1-x}Sn_x)O_3$ [NKN-BTS-x] ceramics doped with 1 mol% $MnO_2$ have been fabricated by a sintering technique with muffling. The $MnO_2$-doped NKN-BTS-x ceramics with x$\leq$0.2 have pure orthorhombic perovskite structure at room temperature. The dense microstructure was developed with grain growth as an increase of amount of Sn. Moreover, the addition of Sn was found to have a significant influence on piezoelectric properties. In particular, the $MnO_2$-doped NKN-BTS-0.1 ceramics showed improved piezoelectric properties of piezoelectric constant ($d_{33}$=145pC/N), relatively large electromechanical coupling factor ($k_p$=43%), dielectic constant (${\varepsilon}^T_{33}/{\varepsilon}_0$=676) dielectric loss (tan$\delta$=1.3%).

• 한국재료학회지
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• 제3권5호
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• pp.546-552
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• 1993

본 연구에서는 입계의 성질을 이용한 PTCR 재료에 입계 modifier로서 $Bi_{2}$$O_{3}$와 BN을 첨가하고 입계의 미세구조와 결함농도를 변화시켜 이에 따른 소결 및 전기적 특성변화를 TMA, XRD, 복합 임피던스방법 등을 이용하여 해석하였다. 실험 결과 Y이 도우핑된 BaT$iO_{3}$ PTCR 재료에 $Bi_{2}$$O_{3}$를 첨가하였을때 약 0.1mol%까지 고용이 되는 것으로 밝혀졌다. $Bi_{2}$$O_{3}$를 고용한계 이하로 첨가시에는 생성되는 vacancy등의 결함으로 말미암아 Y-BaT$iO_{3}$의 치밀화가 촉진되었으나, 그 이상 첨가하면 치밀화 뿐만 아니라 결정립 성장도 억제되었다.$Bi_{2}$$O_{3}$ 결정립 내부에 Ba와 Ti vacancy가 동시에 생길 수 있어 고온저항이 높아짐을 알 수 있었다. BN은 BaT$iO_{3}$에 고용이 되지 않는 것으로 밝혀졌으며 $B_{2}$O/wub/3를 주성분으로한 액상형성으로 인하여 저온에서의 급격한 치밀화가 관찰되었다. 또 Ba-Y-Ti-B-O의 비정질 상이 tripie junction에 존재함으로서 상온저항이 크게 변화하였으며, PTCR jump도 높아졌다.

• 한국세라믹학회지
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• 제43권11호
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• pp.673-679
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• 2006

The discovery of ferroelectric barium titanate (BaTiO$_3$) in 1942 began the present era of dielectrics-based electronic ceramics. Ferroelectric barium titanate has a high dielectric constant and after the recognition of BaTiO$_3$ as a new ferroelectric compound, various attractive electrical properties have been extensively studied and reported. Since then, pioneering work on valence-compensated semiconduction led to the discovery of the positive temperature coefficient (PTC) of the resistance effect found in doped BaTiO$_3$. Significant progress has since followed with respect to understanding the PTC phenomena, advancing materials capabilities, and developing devices for sensor and switching applications. In this paper, the theoretical aspects of the various PTC models are discussed and the future trends of practical applications for PTC devices are briefly mentioned.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.42-45
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• 2001

$(Ba_{0.6}Sr_{0.4}Ca_{x})TiO_{3}+yZrO_{2}$ wt% (x=0.10, 0.15, 0.20, y=0.5~3.0) specimens were fabricated by the mixed-oxide method and then the structural and dielectric properties as a function of the composition ratio and $ZrO_2$ contents were studied. All BSCT specimens showed dense and homogeneous structure without the presence of the seconds phase. The Curie temperature and the dielectric constant at room temperature decreased with increasing the Ca/Ba composition ratio and $ZrO_2$ content. The BSCT(50/40/10) specimens showed the excellent tunability property. And the tunability were increased with increasing the contents of $ZrO_2$.