• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.9
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• pp.953-959
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• 2004

BaTiO$_3$ powder has been applied in so much electronic ceramics. Therefore, as recent, the method to add or coat additive will be needed BaTiO$_3$ powder. As a kind of the method, the coating of BaTiO$_3$ powder was considered. In this study, during BaTiO$_3$ powder was coated by BaTiO$_3$ sol, gelation path was experimented. Standard coating condition was set for homogeneous coating. The phase of the gel was deferent by gelation path. It was confirmed the amorphous gel was made in BaTiO$_3$ phase easily at low temperature. In the amorphous gel, particle growth was shown at 900$^{\circ}C$, because crystallization temperature was low. The optimal ratio of sol and powder was at 10 vol% for the homogeneous coating.

• Journal of the Korean Ceramic Society
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• v.19 no.4
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• pp.281-286
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• 1982

The composition of glasses to be suitable for crystallisation of $BaTiO_3$ by heat-treatment and the dielectric properties of the glass-ceramics were investigated. The composition of the family of glasses was defined by the formula $\chi$ $BaTiO_3 + (100-$\chi$)Al_2O_3$.$2SiO_2$ and excess BaO. Data were presented on dielectric constant and loss tangent at various frequencies. The effects of excess BaO on dielectric properties were investigated. The additions of $Na_2O$ and $Nb_2O_5$ shifted the Curite temperature of these glass-ceramics. The glass composition which was able to be melted at 145$0^{\circ}C$ and moulded as homogeneous glass phase without devitrification should contain $Al_2O_3$.$2SiO_2$ more than 30 mole %. The more the amount of additive BaO increased, the more dielectric constant increased. When the maximum heat-treatment temperature was 105$0^{\circ}C$, we obtained higher dielectric constant than that of 95$0^{\circ}C$. The dielectric constant and the dielectric loss were stable at frequencies between 5$\times$104 and 107 cycle per second. When $Na_2O$ and $Nb_2O_5$ were added, the Curie temperature, presented at 14$0^{\circ}C$ to 15$0^{\circ}C$, shifted to lower temperature. Therefore, the glass-ceramics having high dielectric constant at room temperature were obtained.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.05a
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• pp.137-139
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• 1992

By addition of 1～5mol% CeO$_2$to powders with composition in the BaO-Nd$_2$O$_3$-TiO$_2$, temperature coefficient of permittivity of sintered ceramics may be decreased from approximately-140ppm/$^{\circ}C$～-65ppm/$^{\circ}C$. Dense, fine grained ceramics were prepared with permitivity within the range of 78～92 and Q above 1000.

• Journal of the Korean Ceramic Society
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• v.32 no.5
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• pp.567-574
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• 1995

The effect of MnO2 addition to 0.1mol% Sb2O3-doped BaTiO3 ceramics on microstructure and PTCR characteristics was studied. The PTCR characteristics was observed when 0.01 and 0.02 wt% MnO2 were added and sintered at 132$0^{\circ}C$ for 1 hour. The characteristics can be explained by the changes in the number and size of the abnormal grain growth due to the liquid phase during sintering. when the amount of MnO2 addition was 0.03 wt%, the sample showed NTCR characteristics with room-temperature resistivity over 109 Ωm regardless of the sintering temperature. This behavior can be described by the microstructure change due to the abnormal grain growth and charge compensation effect by MnO2 added. The room-temperature resistivity was increased as the amount of MnO2 was increased. And the specific resistivity ratio (pmax/pmin) showed maximum at 0.02wt% MnO2.

• Proceedings of the Korean Ceranic Society Conference
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• 2000.04a
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• pp.29.2-29.2
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• 2000

• Journal of the Korean Ceramic Society
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• v.22 no.5
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• pp.54-60
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• 1985

This study is concerned with the mechanism of PTCR in $BaTiO_3$ ceramics doped by $Nb^{+5}$ Since the vacancy compensation layer at the grain boundary of n-type doped $BaTiO_3$ ceramics has been known as a major factor for surface state to give PTCR phenomena the dependence of PTCR on such vacancy compensation layer was attemped to be confirmed experimentally in this study. For the experiment quenching and annealing at various temperature after sintering were adopted to induce difference in the thickness of vacancycompensation layer so as to exihibit difference of PTCReffect eachother. The TEX>$Ba^{++}$ cocentration at the grain and grain boundary was measured by EDAX to confirm the formation of the vacancy compensation layer. It was found that i)either decrease in the temperature for quenching ii) or increase in the temperature for annealing improves the PTCR effect clearly iii)increase in TEX>$Ba^{++}$ concentration at the grain boundary results in the improvement of PTCR effect. It was concluded that all the experimental results gave the evidence for the dependence of PTCR effect on the vacancy compensation layer at the grain boundary which had been induced possibly by the $Ba^{++}$ diffusion by the heat treatment conducted.

• Transactions on Electrical and Electronic Materials
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• v.16 no.4
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• pp.179-182
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• 2015

The particle sizes of 0.95(K_0.5Na_0.5)NbO₃-0.05BaTiO₃ powder were controlled by secondary milling time after calcination. The average particle sizes, Dmean, of 0.95(K_0.5Na_0.5)NbO₃-0.05BaTiO₃ powders were critically changed from 14.31 μm to 0.91 μm by secondary milling time. The dielectric and piezoelectric properties of 0.95(K_0.5Na_0.5)NbO₃-0.05BaTiO₃ ceramics depended on the particle sizes of powders after calcination and the secondary milling process. As secondary milling times after calcination were increased to more than 48 hr, the dielectric and piezoelectric properties of 0.95(K_0.5Na_0.5)NbO₃-0.05BaTiO₃ ceramics were deteriorated.

• Journal of the Korean Ceramic Society
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• v.28 no.3
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• pp.179-188
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• 1991

The semiconducting BaTiO3 ceramics used in this study were sintered in the reducing atomosphere(hydrogen gas) and neutral atmosphere(nitrogen gas), then were heat-treated in air to vary defect concentrations. In this experiment, the correlations between the composition analysis and electrical characteristics of these samples were investigated. When the BaTiO3 ceramics were sintered in N2 atmosphere, it was observed that the Ba contents near the interface were lower than that of the grain center, and these samples showed superior PTCR effects. From analysis of the resistivities of grains and grain boundaries by CIRM(Complex Impedance Resonance Method), it was confirmed that the PTCR effects were caused by the resistivity of grain boundaries. And from measurement of the capacitance at each temperature, the samples sintered in N2 atmosphere show the increase of room temperature resistance and the decrease of capacitance as a result of the increase of the charge depletion layers. This phenomenon agrees well with the cation deficiencies in the analytical results.

• Journal of the Korean Ceramic Society
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• v.53 no.2
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• pp.171-177
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• 2016

Rhombohedral $Ba(Ti_{0.92}Zr_{0.08})O_3$ single crystals are fabricated using the cost-effective solid-state single crystal growth (SSCG) method; their dielectric and piezoelectric properties are also characterized. Measurements show that (001) $Ba(Ti_{0.92}Zr_{0.08})O_3$ single crystals have an electromechanical coupling factor ($k_{33}$) higher than 0.85, piezoelectric charge constant ($d_{33}$) of about 950 [pC/N], and piezoelectric voltage constant ($g_{33}$) higher than 40 [${\times}10^{-3}Vm/N$]. Especially the $d_{33}$ of (001) $Ba(Ti_{0.92}Zr_{0.08})O_3$ single crystals was by about six times higher than that of their ceramics. Because their electromechanical coupling factor ($k_{33}$) and piezoelectric voltage constant ($d_{33}$, $g_{33}$) are higher than those of soft PZT ceramics, it is expected that rhombohedral (001) $Ba(Ti_{0.92}Zr_{0.08})O_3$ single crystals can be used as "lead-free" piezoelectric materials in many piezoelectric applications such as actuator, sensor, and transducer.

• Proceedings of the KIEE Conference
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• 1993.11a
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• pp.185-187
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• 1993

0.15BaO-$0.15Sm_2O_3-0.7TiO_2$, ceramics were fabricated by mixed-oxide method. Microwave dielectric properties were investigated with sintering temperature and annealing time. In the specimen sintered at 1350[$^{\circ}C$], dielectric constant, quality factor and temperature coefficient of resonant frequency had a good values of 80.19, 2006 (at 4.6851[GHz]), -27.54[ppm/$^{\circ}C$], respectively. Increasing the annealing time, dielectric constant was almost constant and quality factor was increased. Temperature coefficient of resonant frequency was minimum value (-1.28[ppm/$^{\circ}C$]) at 4 [hr] annealed.