• Title/Summary/Keyword: BaTiO3

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Formation of $Eu^{3+}$ - doped $BaO_2-TiO_2$ Powders Produced by Mechanical Alloying (기계적 합금법에 의한 $BaO_2-TiO_2$ :$Eu^{3+}$ 분말의 합성)

  • Kim, Hyun-Goo
    • Journal of Integrative Natural Science
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    • v.1 no.2
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    • pp.84-88
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    • 2008
  • The formation and thermal properties of the $BaO_2$ and $TiO_2$ mixtures were prepared by mechanical alloying method was investigated by X-ray diffractometry (XRD), scanning electron microscopy (SEM), and thermogravimetric/differential thermal analysis (TG/DTA). The rotating speed of 750 rpm shows more effects on the formation of $BaTiO_3$ single phase. The internal strain calculated using Williamson-Hall method was $4.27{\times}10^{-3}$ for the mixture milled for 300 min, the crystallite size was calculated using the Scherrer method decreased with milling time. The $BaTiO_3$ crystal improved crystallinity was formed by thermal annealing at a temperature of $600^{\circ}C$ for 1 h for the mixture milled for 300 min.

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Electrical conductivity of $BaTiO_3$ under Ba/Ti Ratio (Ba/Ti 비에 따른 $BaTiO_3$의 전기전도도)

  • Yeo, Hong-Goo;Kim, Myong-Ho;Song, Tae-Kwon;Park, Tae-Gone;Lee, Soon-Il;Randall, Clive A.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.04b
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    • pp.165-170
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    • 2004
  • MLCC의 주재료인 $BaTiO_3$는 금속전극의 산화를 방지하기 위해 환원분위기에서 소결하는데 이는 비화학양론적 조성 및 전기적 성질, 결함 그리고 상의 변화를 가져온다. 본 연구에서는 상의 변화를 다양한 온도 범위에서 BaO 또는 $TiO_2$를 첨가시킨 $BaTiO_3$ powder을 가지고 급냉시킨 후 이를 X-선 회절 분석을 통하여 이들의 이차상 형성 여부 등을 조사하였다. $1320^{\circ}C$에서는 $TiO_2$의 고용도가 BaO의 고용도에 비해 상당히 큰 값을 가짐을 알 수 있었다. 이런 결과를 바탕으로 Ba/Ti 비, 산소분압 및 온도에 따른 $BaTiO_3$의 전기전도도 거동에 의하면, 고용범위내에서 BaO 첨가량이 증가할수록 전기전도도의 최소점은 낮은 산소분압쪽으로 이동함을 관찰하였으며 이는 $Ti^{4+}$빈자리에 따른 산소빈자리가 형성되는 결함 모델로 설명되어진다.

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The dielectric characteristics of $BaTiO_3$ thin capacitor ($BaTiO_3$ 박막 커패시터의 유전특성)

  • 홍경진;김태성;능전준일
    • Electrical & Electronic Materials
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    • v.8 no.5
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    • pp.580-586
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    • 1995
  • 최근 커패시터의 전극은 Pt, Au등으로 이용되고 있다. 이러한 전극의 전기적 특성은 우수하나 고가이다. 본 연구에서는 전극의 저가격화 측면에서 알루미늄 전극 위에 BaTiO$_{3}$를 증착하고 기관의 온도를 실온에서 600[.deg. C]까지 변화시켜 RF스퍼터링법으로 제작하였다. BaTiO$_{3}$세라믹의 유전특성은 구성하고 있는 입자의 강유전 분역 밀도와 입자의 크기에 의존하므로 입자가 성장되는 온도영역에서 입자의 크기와 유전율간의 관계를 연구하였다. 또한 BaTiO$_{3}$박막 커패시터의 유전상수는 BaTiO$_{3}$세라믹과 알루미늄기관의 계면에서 산화특성이 일어나기 때문에 기관온도의 변화에 의해 조사되었다. 기관의 온도를 증가시킴에 따라 결정면의 피크와 강도는 증가하였으며, 유전특성은 결정입자의 크기가 0.8[.mu.m]일때 가장 양호하였다. 유전율값은 기판 온도가 400[.deg. C]일 때 가장 크게 나타났다. 결과적으로, 알루미늄 전극에 BaTiO$_{3}$세라믹을 증착하여 저가의 적층용 세라믹 콘덴서를 제조할 수 있음을 알았다.

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A study on the Structural Properties of PZT/BT thick film (PZT/BT 세라믹 후막의 구조적 특성에 관한 연구)

  • Lee, Sang-Heon;Lim, Sung-Soo;Lee, Young-Hie
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.05b
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    • pp.57-59
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    • 2005
  • Ploycrystalline $Pb(Zr_{0.5},Ti_{0.5})O_3$ and $BaTiO_3$ powder were prepared by sol-gel process. The alumina substrate were sintered at $1400^{\circ}C$ with bottom electrode of Pt for 2 hours. The Pb(Zr0.5,Ti0.5)O3 / BaTiO3 multilayered thick films with laminating times were fabricated on alumina substrate by screening printing method. The obtained thick films were sintered at $800^{\circ}C$ with upper electrode of Ag paste for 1 hour. Structural properties of Pb(Zr0.5,Ti0.5)O3 / BaTiO3 multilayered thick films were investigated. As a result of the Differential Thermal Analysis(DTA) of Pb(Zr0.5,Ti0.5)O3, exothermic peak was observed at around $650^{\circ}C$. The X-ray diffraction (XRD) patterns indicated that BaTi03 and Pb(Zr0.5,Ti0.5)O3 phases and porosities were formed in the interface of Pb(Zr0.5,Ti0.5)O3 / BaTiO3 multilayered thick films.

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Synthesis of 100 nm BaTiO3 by Solid-state Reaction (고상법에 의한 100 nm BaTiO3 분말의 합성)

  • Kim, Jung-Hwan;Jung, Han-Seong;Cho, Joon-Yeob;Hong, Jeong-Oh;Kim, Young-Tae;Hur, Kang-Heon
    • Journal of the Korean Ceramic Society
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    • v.46 no.2
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    • pp.170-174
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    • 2009
  • $BaTiO_3$ powder was synthesized by the solid-state reaction of fine $BaTiO_3$ and $TiO_2$ raw materials. Fine grinding media of 50 and 300 microns were used for obtaining fine particulate mixture of $BaTiO_3$ and $TiO_2$ with high homogeneity. Effect of the size of grinding media on the synthesis mechanism of $BaTiO_3$ was discussed on the basis of the particulate morphology and thermogravimetry data for the mixture powders. By using the finer grinding media, $BaTiO_3$ was formed at the lower temperature and the particle size with the relatively narrower distribution could be obtained. $BaTiO_3$ powder with the average size of 100 nm was synthesized by the solid reaction in vacuum atmosphere.

A Study on Fabrication of Semiconducting $BaTiO_3$ Ceramics at Lower Sintering Temperature (저온 소결에 의한 반도성 $BaTiO_3$ 세라믹스 제조에 관한 연구)

  • 김준수;김흥수;권오성;이병하
    • Journal of the Korean Ceramic Society
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    • v.33 no.2
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    • pp.183-191
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    • 1996
  • For the fabrication of semiconducting BaTiO3 ceramics at lower sintering temperature BN was selected as a sintering aid and the microsturcture of semiconducting BaTiO3 ceramics and PTCR characteristics by their microstructural changes were investigated. by adding BN to 0.1 mol% Sb2O3-doped BaTiO3 ceramics the sintering temperature showing semiconducting BaTiO3 ceramics was reduced by 16$0^{\circ}C$ from 130$0^{\circ}C$ to 114$0^{\circ}C$ and the specific resistivity ratio was increased as the amount of BN was increased.

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Formation Rate of Tetragonal BaTiO3 Powder by Hydrothermal Synthesis and its Dielectric Property (수열합성법에 의한 정방정 BaTiO3 분말의 생성속도 및 유전특성)

  • 이종현;최용각;원창환;김채성
    • Journal of the Korean Ceramic Society
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    • v.39 no.7
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    • pp.628-634
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    • 2002
  • Formation rate of tetragonal BaTiO$_3$powder by hydrothermal synthesis and its dielectric property were studied. Submicron tetragonal BaTiO$_3$ powders were prepared hydrothermally, using Ba(OH)$_2$.8$H_2O$, TiO$_2$(anatase) and KOH as starting chemicals. Characterization via X-ray diffractometry, field emission scanning electron microscopy confirmed that increasing calcination temperatures(from 1100 to 130$0^{\circ}C$) promotes the formation of tetragonal BaTiO$_3$. Tetragonal BaTiO$_3$ ceramics, obtained by calcining at 1200 for 3 h after hydrothermal synthesis at 200 for 168 h, exhibited submicron size of 0.5 ~ 0.7 ${\mu}{\textrm}{m}$ and high relative permittivity.

The Characterization of Structural and Optical Properties for rf Magnetron Sputtered $(BaSr)TiO_3$ Thin Film (Rf Magnetron Sputtering 방법에 의하여 제조된 $(BaSr)TiO_3$ 박막의 구조적, 광학적 특성 고찰)

  • Kim, Tae-Song;Oh, Myung-Hwan;Kim, Chong-Hee
    • Analytical Science and Technology
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    • v.6 no.2
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    • pp.239-246
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    • 1993
  • The structure of $(BaSr)TiO_3$ thin film deposited on ITO coated glass, bare glass and (100) Si substrates was not changed, but the crystallinity was improved by the polycrystalline ITO layer and (100) Si substrate. The composition of $(BaSr)TiO_3$ thin film deposited on ITO coated glass was nearly stoichiometric ((Ba+Sr)/Ti=1.08~1.09) and very uniform through all deposition process. But as the deposition temperature increases, the interdiffusion between grown thin film and ITO layer and between ITO layer and base glass is severer. $(BaSr)TiO_3$ thin film deposited on ITO coated glass substrate was highly transparent. The refractive index($n_f$) of $(BaSr)TiO_3$ thin film deposited on ITO coated glass was 2.138~2.286 as a function of substrate temperature.

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Microwave Dielectric Properties of the 0.96$MgTiO_3$-0.04$BaTiO_3$ Ceramics with Sintering Temperature (소결온도에 따른 0.96$MgTiO_3$-0.04$BaTiO_3$ 세라믹스의 마이크로파 유전특성)

  • Choi, Eui-Sun;Lee, Sang-Chul;Lee, Sung-Gap;Bae, Seon-Gi;Lee, Young-Hie
    • Proceedings of the KIEE Conference
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    • 2001.07c
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    • pp.1408-1410
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    • 2001
  • The 0.96$MgTiO_3$-0.04$BaTiO_3$ ceramics were prepared by the conventional mixed oxide method. The structural properties were investigated with sintering temperature and composition ratio by XRD, SEM and EDS. According to the X-ray diffraction patterns of the 0.96$MgTiO_3$-0.04$BaTiO_3$ ceramics, the hexagonal $BaMg_6Ti_6O_{19}$ and ilmenite $MgTiO_3$ structures were coexisted. In the case of the 0.96$MgTiO_3$-0.04$BaTiO_3$ ceramics sintered at 1325$^{\circ}C$, dielectric constant, quality factor and temperature coefficient of resonant frequency were 23.95, 70,200, -55.8ppm/$^{\circ}C$, respectively.

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