• 한국결정성장학회지
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• 제8권1호
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• pp.49-54
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• 1998

수열법에 의하여 $BaTiO_3$ 미립자를 합성하였다. 출발원료로는 $TiO_2$와 $Ba(OH)_2{\cdot}8H_2O$를 사용하고 과량의 $Ba(OH)_2{\cdot}8H_2O$를 투입함으로써 증류수만을 용매로 사용하여 $150^{\circ}C$의 저온에서 BaTiO3 미립자를 합성할 수 있었다. 합성된 입자의 형태는 구형에 가까운 부정형이었으며, 입자의 크기는 합성온도 및 Ba/Ti 원자비에 따라 변화되었다.

• 한국세라믹학회지
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• 제33권9호
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• pp.1038-1044
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• 1996

The variations of sintering and electrical characteristics of semiconducting BaTiO3 ceramics with sintering agents added were investigated comparing the case of BaB2O4 addition to BN and TiO2 addition. When BaB2O4 added in BaTiO3 ceramics the densitifcation of specimen could be acheived more easily and recvealed the better PTCR characteristics than BN and TiO2 addition. As increase of addition of BaB2O4 in BaTiO3 spec imens the slope of resistivity jump also increased but the temperature of maximum resistivity decreased, It was supposed that addition of BaB2O4 led to increase of Ns (acceptor state density) value at grain boundaries.

• 한국재료학회지
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• 제21권9호
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• pp.509-514
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• 2011

In this study, optical emission spectroscopy was used to monitor the plasma produced during the RF magnetron sputtering of a $BaTiO_3$ target. The intensities of chemical species were measured by real time monitoring with various discharge parameters such as RF power, pressure, and discharge gas. The emission lines of elemental and ionized species from $BaTiO_3$ and Ti targets were analyzed to evaluate the film composition and the optimized growth conditions for $BaTiO_3$ films. The emissions from Ar(I, II), Ba(I, II) and Ti(I) were found during sputtering of the $BaTiO_3$ target in Ar atmosphere. With increasing RF power, all the line intensities increased because the electron density increased with increasing RF power. When the Ar pressure increased, the Ba(II) and Ti(I) line intensity increased, but the $Ar^+$ line intensity decreased with increasing pressure. This result shows that high pressure is of greater benefit for the ionization of Ba than for that of Ar. Oxygen depressed the intensity of the plasma more than Ar did. When the Ar/$O_2$ ratio decreased, the intensity of Ba decreased more sharply than that of Ti. This result indicates that the plasma composition strongly depends on the discharge gas atmosphere. When the oxygen increased, the Ba/Ti ratio and the thickness of the films decreased. The emission spectra showed consistent variation with applied power to the Ti target during co-sputtering of the $BaTiO_3$ and Ti targets. The co-sputtered films showed a Ba/Ti ratio of 1.05 to 0.73 with applied power to the Ti target. The films with different Ba/Ti ratios showed changes in grain size. Ti excess films annealed at $600^{\circ}C$ did not show the second phase such as $BaTi_2O_5$ and $TiO_2$.

• 한국결정학회지
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• 제10권1호
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• pp.56-65
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• 1999

수열법을 이용하여 미세한 BaTiO3 분말을 합성하였다. Ti원으로 두 종류의 TiO2 gel을 사용하였으며 그 크기와 모양을 BaTiO3 합성에 주는 영향을 고찰하였다. 구형의 단분산 TiO2 gel을 사용하여 Ba(NO3)2 수용액에서 수열 합성한 BaTiO3 분말은 입자크기도 균일하였으며 응집이 일어나지 않아않았다. 비교적 낮은 pH에서 구형 TiO2 gel을 사용하여 합성한 BaTiO3 분말은 구형을 그대로 유지하였지만 높은 pH에서 합성한 BaTiO3 분말은 그 구형이 분해되었다. KOH양이 많아지고, 합성시간이 길어짐에 따라 합성된 BaTiO3 분말의 크기는 커졌으며 그 c/a 값도 증가하였다.

• 한국세라믹학회지
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• 제32권7호
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• pp.761-768
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• 1995

Double layered BaTiO3 thin films with high dielectric constant as well as good insulating property were prepared for the application to low voltage driving thin film electroluminescent (TFEL) device. BaTiO3 thin films were formed by rf-magnetron sputtering technique. Amorphous and polycrystalline BaTiO3 thin films were deposited at the substrate temperatures of room temperature and 55$0^{\circ}C$, respectively. Two kinds of films prepared under these conditions showed high resistivity and high dielectric constant. The figure of merit (=$\varepsilon$r$\times$Eb.d) of polycrystalline BaTiO3 thin film was very high (8.43$\mu$C/$\textrm{cm}^2$). The polycrystalline BaTiO3 showed a substantial amount of leakage current (I), under the high electric field above 0.5 MV/cm. The double layered BaTiO3 thin film, i.e., amorphous BaTiO3 layer coated polycrystalline BaTiO3 thin film, was prepared by the new stacking method and showed very good dielectric and insulating properties. It showed a high dielectric constant fo 95 and leakage current density of 25 nA/$\textrm{cm}^2$ (0.3MV/cm) with the figure of merit of 20$\mu$C/$\textrm{cm}^2$. The leakage current density in the double layered BaTiO3 was much smaller than that in polycrystalline BaTiO3 under the high electric field. The saturated brightness of the devices using double layered BaTiO3 was about 220cd/$m^2$. Threshold voltage of TFEL devices fabricated on double layered BaTiO3 decreased by 50V compared to the EL devices fabricated on amorphous BaTiO3.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2004년도 추계학술대회 논문집 전기물성,응용부문
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• pp.58-60
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• 2004

The $BaTiO_3/SrTiO_3$ heterolayered thick films were fabricated on alumina substrate by screening printing method. The obtained films were sintered at $1400^{\circ}C$ with bottom electrode of Pt for 2 hours. The structural and electrical properties of $BaTiO_3/SrTiO_3$ heterolayered thick films were compared with pure $BaTiO_3$ and $SrTiO_3$ films. The (Ba,Sr)$TiO_3$ phase was appeared at the $BaTiO_3/SrTiO_3$ heterolayered thick films. The thickness of $BaTiO_3/SrTiO_3$ heterolayered thick film, obtained by one printing, was about $50{\mu}m$. The dielectric constant and dielectric loss of the $BaTiO_3/SrTiO_3$ heterolayered thick films were about 1964, 5.5% at 1KHz, respectively.

• 한국세라믹학회지
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• 제33권2호
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• pp.214-222
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• 1996

The effect of physicochemical properties of organic solvent and dispersant among organic solvent dispersant binder and plasticizer which are used as processing additives in MLCC fabrication process on the dispersion of BaTiO3 was studied. The steric and electrostatic stabilization mechanisms in dispersion of BaTiO3 in organic media were evaluated respectively. The sttability of BaTiO3 achieved bysteric stabilization was dependent on the fraction of surface coverage of dispersant adsorption on BaTiO3. The electrostatic repulsive forces of BaTiO3 particles dispersed in orgainc media was found to be appreciabley great and dependent mainly on the kinds of organic solvent used. The mechanism affecting the stability of BaTiO3 was studied by the method of rheologi-cal behaviors of BaTiO3 suspension.

• 한국전기전자재료학회논문지
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• 제22권6호
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• pp.495-500
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• 2009

The ceramic($BaTiO_3$)-polymer(epoxy) composites have been widely investigated as dielectric materials for embedded capacitors in printed circuit boards (PCBs). The dielectric properties of $BaTiO_3$/epoxy composites prepared using the agglomerated $BaTiO_3$ particles were investigated in the present study. The dielectric constants of the composites prepared using the agglomerated $BaTiO_3$ particles were about 2 times higher than those of the composites with the dispersed $BaTiO_3$ particles. The insulation resistance of the composites prepared using the agglomerated $BaTiO_3$ particles were lower than those of the composites with dispersed $BaTiO_3$ particles. As a result, there is tradeoff between high dielectric constant and insulation resistance in the $BaTiO_3$/epoxy composites. So it is important to select proper agglomerated or dispersed $BaTiO_3$ particles in accordance with needs.

• 한국세라믹학회지
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• 제46권2호
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• pp.189-199
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• 2009

The Powder characteristics and sintering behavior of $SiO_2$ coated $BaTiO_3$ were studied. $BaTiO_3$ powders were synthesized by the liquid mix method developed by Pechini, and silica coating was prepared by alkoxide hydrolysis method with TEOS and ethanol. The particle size of the $BaTiO_3$ powders was 35 nm and the thickness of the $SiO_2$ coating layer was 5 nm. As the $SiO_2$ content increased, the $SiO_2$ layers improved the powder dispersion by increasing electrostatic repulsion between the $BaTiO_3$ particles. Effects of MgO coating on microstructure and dielectric properties of $BaTiO_3$ have been studied compared with mechanically MgO mixed $BaTiO_3$. MgO coated $BaTiO_3$ particles were prepared by a homogeneous precipitation method using $MgCl_2\cdot 6H_2O$ and urea. MgO coated $BaTiO_3$ exhibited homogeneous microstructure compared with mixed samples. XRD analysis revealed that Mg substitution for the Ti site in the MgO mixed sample was much greater than in the coated one. Electrical properties of MgO mixed and coated $BaTiO_3$ were affected by the diffusion behavior of Mg in $BaTiO_3$ lattice.

• 한국세라믹학회지
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• 제41권12호
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• pp.915-920
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• 2004

[ $BaTi_{4}O_9$ ]계 세라믹스에 borosilicate계 유리 프리트를 첨가할 때 주결정상이 $BaTi_{5}O_{11}$로 변화되는 현상을 XRD와 TEM으로 분석하였다. Borosilicate계 유리 프리트가 $BaTi_{4}O_9$상으로부터 Ba 이온을 선택적으로 흡수함으로써 주상인 $BaTi_{4}O_9$ 상보다 Ti-rich인 $BaTi_{5}O_{11}$상으로 변화하는 것으로 추측하였다. 이와 같은 결과는 유리의 첨가량과 열처리 온도에 따라 영향을 받는데 $BaO-TiO_2$계의 Ti-rich 영역에 속하는 $Ba_{4}Ti_{13}O_{30},\;Ba_{2}Ti_{9}O_{20}$ 등의 결정상도 상변화 과정에 참여하고 있음을 관찰하였다. 중-고유전율 LTCC 조성개발을 위하여 유리 첨가에 의한 중-고유전율 모재료의 저온소결을 시도할 때 적정한 저온소결특성을 확보하면서도 상변화를 고려한 유리 프리트 첨가량 제어가 필요함을 알 수 있었다.