• Journal of the Korean Ceramic Society
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• v.37 no.5
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• pp.511-515
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• 2000

The effect of Ba2+ ion dissolution with different pH and amount of PAA on microstructural changes of green and sintered bodies and its electrical properties was studied in aqueous nano-size BaTiO3 slurry system. The dissolution of Ba2+ was least at strong base, pH 10.8 and by addition of amount of 0.15 wt% PAA. The green body with the lowest of dissolution of Ba2+ at pH 10.8 and 0.15 wt% PAA had minimum values of average pore size, 40nm and shown high increase of sintered density. The compact sintered at 125$0^{\circ}C$ for 2 hr with highest Ba2+ dissolution had low density and dielectric constant due to abnormal grian growth. However, the sintered body with the lowest Ba2+ dissolution had high sintered density and then shown high dielectric constant.

• Electrical & Electronic Materials
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• v.8 no.5
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• pp.580-586
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• 1995

최근 커패시터의 전극은 Pt, Au등으로 이용되고 있다. 이러한 전극의 전기적 특성은 우수하나 고가이다. 본 연구에서는 전극의 저가격화 측면에서 알루미늄 전극 위에 BaTiO$_{3}$를 증착하고 기관의 온도를 실온에서 600[.deg. C]까지 변화시켜 RF스퍼터링법으로 제작하였다. BaTiO$_{3}$세라믹의 유전특성은 구성하고 있는 입자의 강유전 분역 밀도와 입자의 크기에 의존하므로 입자가 성장되는 온도영역에서 입자의 크기와 유전율간의 관계를 연구하였다. 또한 BaTiO$_{3}$박막 커패시터의 유전상수는 BaTiO$_{3}$세라믹과 알루미늄기관의 계면에서 산화특성이 일어나기 때문에 기관온도의 변화에 의해 조사되었다. 기관의 온도를 증가시킴에 따라 결정면의 피크와 강도는 증가하였으며, 유전특성은 결정입자의 크기가 0.8[.mu.m]일때 가장 양호하였다. 유전율값은 기판 온도가 400[.deg. C]일 때 가장 크게 나타났다. 결과적으로, 알루미늄 전극에 BaTiO$_{3}$세라믹을 증착하여 저가의 적층용 세라믹 콘덴서를 제조할 수 있음을 알았다.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.1095-1096
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• 2006

When $Y_2O_3$ was added to Ti-excess $BaTiO_3$ ((Ba+Y)/Ti =1), the area occupied by $Y^{3+}$ ion was confirmed by its microstructure development, electrical conductivity behavior and lattice constant. Grain growth inhibition was observed when the content of donor dopant exceeded a critical value ($x{\approx}.0.01$) in $BaTiO_3+x(0.5Y_2O_3+TiO_2)$ system. A donor-doped behavior was observed at various Y contents ($0.2\sim3.0$ mol% Y) when $Y_2O_3$ was added to $TiO_2$-excess $BaTiO_3$. As Y content was increased, (002) and (200) peaks shifted to higher angles and the lattice constant (a and c axis) decreased gradually.

• Transactions on Electrical and Electronic Materials
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• v.3 no.2
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• pp.24-27
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• 2002

The NdBaCuO superconductor samples were zone-melted in low oxygen partial pressure (1%O$_2$+99%Ar). The zone-melting temperature was decreased about 12$0^{\circ}C$ film 1,06$0^{\circ}C$, the zone-melting temperature in air. Thus the loss of liquid phase (BaCuO$_2$ and CuO) was reduced during: the zone-melting process. The content of non-superconducting phase Nd422 in zone-melted NdBaCuO samples was clearly decreased and, therefore, the substitution of Nd for Ba was occurred. The superconductivity of zone-melted Nd$_{1+x}$Ba$_{2-x}$Cu$_3$O$_{y}$ prepared under low oxygen partial pressure was distinctively improved.d.d.d.

• Journal of the Korean Ceramic Society
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• v.33 no.2
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• pp.183-191
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• 1996

For the fabrication of semiconducting BaTiO3 ceramics at lower sintering temperature BN was selected as a sintering aid and the microsturcture of semiconducting BaTiO3 ceramics and PTCR characteristics by their microstructural changes were investigated. by adding BN to 0.1 mol% Sb2O3-doped BaTiO3 ceramics the sintering temperature showing semiconducting BaTiO3 ceramics was reduced by 16$0^{\circ}C$ from 130$0^{\circ}C$ to 114$0^{\circ}C$ and the specific resistivity ratio was increased as the amount of BN was increased.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.335-338
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• 1998

The effect of glass flit addition on microwave dielectric properties of BaTiO$_3$-3TiO$_2$ ceramic was studied. Addition of glass frit to this system obtained sintered sample below sintering temperature 105$0^{\circ}C$. At BaTiO$_3$-3TiO$_2$+ g1ass frit 3wt% + BaWO$_4$6 wt%m, this ceramic showed excellent microwave properties of dielectric constant 34, Q$\times$f 8,100, temperature coefficient of resonant frequency 4 ppm/$^{\circ}C$ .

• Proceedings of the KIEE Conference
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• 1995.07c
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• pp.1133-1136
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• 1995

RF-magnetron sputtering 방법으로 형성한 $BaTa_2O_6$의 공정변수에 따른 전기, 광학적 특성변화를 관찰하여 $BaTa_2O_6$ 박막의 TFELD(thin film electroluminescent display) 절연막으로서 응용 가능성을 연구하였다. $BaTa_2O_6$ 박막의 유전특성은 증착시의 $O_2$ 함량과 sputtering 압력의 변화에는 큰 영향을 받지 않으나 기판온도에는 영향을 받는 것으로 확인되었다. 이들 공정변수를 가변하여 실험한 결과, $BaTa_2O_6$ 박막 형성의 최적조건으로 플라즈마 압력을 6 mtorr, sputtering gas 내의 $O_2$ 혼합비율은 40%, 기판온도는 $100^{\circ}C$로 결정하였다. 이상의 조건에서 제조된 $BaTa_2O_6$ 박막은 10.2 ${\mu}C/cm^2$의 매우 우수한 성능지수를 보였다. 이상의 $BaTa_2O_6$ 박막을 하부절연층으로, 절연파괴강도가 높은 $SiO_xN_y$를 상부 절연층으로 사용하여 제조된 EL 소자는 1 kHz, 삼각파 구동시 발광 임계전압은 약 32 volts, 최대휘도는 54 $cd/m^2$으로 측정되었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.12-12
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• 2009

We weal know that PbO was poisonous and prone to volatilize, then to pollute the circumstance and hurt to people, so we should dope other innocuous additives instead of lead to increase Tc of composite PTC material. In order to prepare lead-free $BaTiO_3$-based PTC with middle Curie point, the incorporation on $(BaNaK)(TiNb)O_3$ into $BaTiO_3$-based ceramics was investigated on samples containing 0.05, 0.07 and 0.1mol% of $(BaNaK)(TiNb)O_3$. $(BaNaK)(TiNb)O_3$ was compounded as standby material by conventional solid-state reaction technique. The starting materials were $Na_2O_3$,$K_2CO_3$, $BaCO_3$, $TiO_2$ and $Nb_2O_5$ powder, and using solid-state reaction method, too. The microstructure of samples were investigated by SEM, DSC, XRD and dielectric properties. Phase composition and lattice parameters were investigated by X-ray diffraction. Also, we are measure the resistivity of sintered bodies with calcinations condition.

• The Korean Journal of Ceramics
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• v.5 no.4
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• pp.379-385
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• 1999

Minute boehmite crystals with high aspect rations, which were hydrothermally synthesized from gibbsite in $Ba(OH)_2$ solution, occluded Ba with the Ba/Al molar ratio of about 0.03 in their interlayers. Their surface areas were about 14$\m^2$/g. The Ba-intercalated bohemite samples were partly used for producing $BaAl_{12}O){19}$ with low sinterability by externally supplementing $Ba(OH)_2$, and for forming transient aluminas. The surface area of $BaAl_{12}O){19}$ obtained by firing at $1500^{\circ}C$ for 3 h was 5.3$\m^2$/g, which was significantly lower than 12$\m^2$/g of the sol-gel origin. While a mixture ${\gamma}$-alumina and BaO is known to from $BaAl_{12}O){19}$ at $1200^{\circ}C$, solid state reaction between η-alumina transformed from the Ba-intercalated boehmite and BaO formed from $Ba(OH)_2$ deposited on the boehmite started above $1300^{\circ}C$. This suggests that large sized $Ba^{2+}$ ion occluded in η-alumina considerably suppresses the diffusion of $Al^{3+}$ ion. The surface area of the Ba-intercalated boehmite fired at $1400^{\circ}C$ for 3h was as high as 14$\m^2$/g indicative of its potential applicability to combustion catalysts. But it was decreased to 5.0$\m^2$/g after firing at $1500^{\circ}C$ for 3 h, accompanied by abrupt formations of $\alpha$-alumina and $BaAl_{12}O){19}$ as main products. The suppression of $\alpha$-alumina formation up to $1400^{\circ}C$ also suggests the significant blocking effect of $Ba^{2+}$ ion on the diffusion of the component ions.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.426-429
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• 2001

The $BaTiO_{3}+xNb_{2}O_{5}$[x=6, 8, 10wt%] ceramics were prepared by conventional mixed oxide method. The structural properties of the $BaTiO_{3}+xNb_{2}O_{5}$ ceramics with the sintering temperature and addition of $Nb_{2}O_{5}$ were investigated by XRD and SEM. Increasing the sintering temperature, the $2{\Theta}$ value of BT (110) peak was shifted to the lower degree and intensity of the BN (310) peak was increased. Increasing the addition of $Nb_{2}O_{5}$, the intensity of BN (100) peak was decreased and BN (310), (110) peaks were increased. The grain size of the $BaTiO_{3}+xNb_{2}O_{5}$ ceramics sintered at $1350^{\circ}C$ were almost uniform. In the $BaTiO_{3}+xNb_{2}O_{5}$ ceramics sintered at $1350^{\circ}C$, the dielectric constant and dielectric loss were 5424, 0.02 respectively.