• Transactions on Electrical and Electronic Materials
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• v.3 no.2
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• pp.24-27
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• 2002

The NdBaCuO superconductor samples were zone-melted in low oxygen partial pressure (1%O$_2$+99%Ar). The zone-melting temperature was decreased about 12$0^{\circ}C$ film 1,06$0^{\circ}C$, the zone-melting temperature in air. Thus the loss of liquid phase (BaCuO$_2$ and CuO) was reduced during: the zone-melting process. The content of non-superconducting phase Nd422 in zone-melted NdBaCuO samples was clearly decreased and, therefore, the substitution of Nd for Ba was occurred. The superconductivity of zone-melted Nd$_{1+x}$Ba$_{2-x}$Cu$_3$O$_{y}$ prepared under low oxygen partial pressure was distinctively improved.d.d.d.

• Bulletin of the Korean Chemical Society
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• v.30 no.11
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• pp.2559-2562
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• 2009

The lattice vibration and crystal structure of alkaline earth metal-substituted $RuSr_{1.9}A_{0.1}GdCu_{2}O_{8}$ (A = Ca, Sr, and Ba) have been investigated with micro-Raman spectroscopy. The present $RuSr_{1.9}A_{0.1}GdCu_{2}O_{8}$ materials show not only several weak Raman peaks corresponding to the vibrations of $O_{Cu}$ and $O_{Ru}$ but also strong characteristic phonon lines related to $O_{Sr}$ vibration mode. A comparison between the frequency of $O_{Sr}$ vibration and the bond distances of (Ru$O_{Sr}$) and (Cu‒$O_{Sr}$) in the present ruthenocuprates reveals that the vibration energy of $O_{Sr}$ is mainly dependent on the bond distance of (Ru‒$O_{Sr}$). The peak splitting of the $O_{Sr}$ phonon lines was observed for the unsubstituted $RuSr_{1.9}A_{0.1}GdCu_{2}O_{8}$, suggesting the existence of two different (Ru‒$O_{Sr}$) bond distances. Such a peak splitting caused by the appearance of low-energy shoulder reflects the presence of internal charge transfer pathway from the $RuO_2$ plane to the superconductive $CuO_2$ one. After the substitution of Sr with Ca or Ba, the low-energy shoulder peak of $O_{Sr}$ vibration becomes suppressed, underscoring the depression of internal charge transfer between the $RuO_2$ and $CuO_2$ planes. The weakened role of $RuO_2$ layer as charge reservoir in the $RuSr_{1.9}A_{0.1}GdCu_{2}O_{8}$8 (A = Ca, Ba) would be responsible for the depression of $T_c$ upon the Ca/Ba substitution.

• Journal of the Korean Magnetics Society
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• v.18 no.4
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• pp.136-141
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• 2008

In this study, the magnetic(static and high-frequency) and microwave absorbing properties have been investigated in Ru-Co substituted M-hexaferrites($BaFe_{12-2x}Ru_xCo_xO_{19}$). The powders and sintered specimens were prepared by conventional ceramic processing technique. With the calcined powders, the composite specimens were prepared using the silicone rubber as a matrix material. The substitution ratio of Ru-Co to obtain in-plane magnetic anisotropy, thus having the minimum coercivity, is much smaller (about x=0.3) than the previously reported Ti-Co substituted specimen. Owing to this low substitution, the specimen has a large value of saturation magnetization($M_s$=65 emu/g). Ferromagnetic resonance behavior and microwave absorbing frequency band is strongly influnced by the coercvity which can be controlled by Ru-Co substitution ratio. It is found that the M-hexaferrites with planar magnetic anisotropy by doping Ru-Co in both sintered and composite form have superior microwave absorbing properties in GHz frequency range.

• 한국초전도학회:학술대회논문집
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• v.10
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• pp.76-79
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• 2000

The effect of Ba substitution for Sr on the lattice parameters and the temperature dependence of the thermoelectric power and electrical resistivity has been investigated for Y(Sr$_{2-x}$Ba$_x$)Cu$_{2.7}$Mo$_{0.3}$O$_z$ (x=0${\sim}$2.0). Both a and c lattice parameters increase as the Ba content, x increases. The correlation between Tc and the carrier concentration estimated from the thermoelectric power data indicates that the change of hole concentration is negligible for x ${\le}$ 1.0 in contrast to the large change for x > 1.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.85-88
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• 2001

The NdBaCuO superconductor samples were Zone-melted in low oxygen partial pressure (1% $O_{2}+ 99% Ar$ ). The Zone-melting temperature was decreased about $120^{\circ}C$ from $1060^{\circ}C$ the zone-melting temperature in air. Thus the loss of liquid phase ($BaCuO_{2}$ and CuO) was reduced during the zone-melting process. The content of non-superconducting phase Nd422 in zone-melted NdBaCuO samples was clearly decreased, so was the substitution of Nd for Ba. The superconductivity of zone-melted $Nd_{1+x}Ba_{2-x}Cu_{3}O_{y}$ prepared under low oxygen partial pressure was distinctively improved.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.85-88
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• 2001

The NdBaCuO superconductor samples were Zone-melted in low oxygen partial pressure (1% O$_2$+99% Ar). The Zone-melting temperature was decreased about 120$^{\circ}C$ from 1060$^{\circ}C$ the zone-melting temperature in air. Thus the loss of liquid phase (BaCuO$_2$ and CuO) was reduced during the zone-melting process. The content of non-superconducting phase Nd422 in zone-melted NdBaCuO samples was clearly decreased, so was the substitution of Nd for Ba. The superconductivity of zone-melted Nd$\sub$1+x/Ba$\sub$2-x/Cu$_3$O$\sub$y/ prepared under low oxygen partial pressure was distinctively improved.

• Journal of the Korean Ceramic Society
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• v.33 no.8
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• pp.895-900
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• 1996

Ba(Ti1-xSnx)4O9 powder was synthesized by oxalate method. With the substitution of Sn into Ti site the sintered BaTiO4 crystal phase was stabilized due to the formation of solid solution. The optimal amounts of Sn solutbility for formation of BaTi4O9 crystalline phase was 0.16mole and of Sn was substituted and sintering was done at 135$0^{\circ}C$ for 30 minutes long rod type crystal was well developed and the highest Q value was obtained. But dielectric constant wasnearly constant without regarding to the Sn addition and the sintering time.

• Proceedings of the KIEE Conference
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• 1993.07b
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• pp.1113-1115
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• 1993

Piezoelectric Actuator samples were fabricated using PMN-PT-PZ ceramics with Barium substitution, and the strain properties of them were investigated. The tartest Piezoelectric coefficient and electromechanical coupling coefficient were observed at the sintering temperature $1250^{\circ}C$, Barium 5mol%. In the case of Multilayered specimens, they showed considerable strain and small hysteresis than single round type.

• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.5-6
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• 2006

Using the $(Ba_{0.5}Sr_{0.5}){TiO_3}$(BST) powders prepared by the Sol-Gel method, the EST thick films were fabricated on the ${Al_2}{O_3}$ substrates coated with Pt by the screen printing method. Compared with pure EST thick films, the structural and dielectric properties of the EST thick films doped with 1${\sim}$10 wt % MgO were investigated. It was observed that the Mg substitution into EST causes a shift in the cubic-tetragonal EST phase transition peak to a lower temperature. The microstructure of the EST substituted with Mg was homogeneous and dense. Mg substitution into EST had a significant effect on the grain size reduction. Dielectric constant was decreased with increasing the MgO content and temperature. In the case of EST thick films doped with 1 wt% MgO, the relative permittivity and dielectric loss were 158] and 1.4 % at 1 MHz.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.12
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• pp.555-559
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• 2006

Using the $Ba_{0.5}Sr_{0.5}TiO_3$(BST) powders prepared by the Sol-Gel method, the BST thick films were fabricated on the $Al_2O_3 $substrates coated with Pt by the screen printing method. Compared with pure BST thick films, the structural and dielectric properties of the BST thick films doped with $1{\sim}10$ wt % MgO were investigated. It was observed that the Mg substitution into BST causes a shift in the cubic-tetragonal BST phase transition peak to a lower temperature. The microstructure of the BST substituted with Mg was homogeneous and dense. Mg substitution into BST had a significant effect on the grain size reduction. Dielectric constant was decreased with increasing the MgO content and temperature. In the case of BST thick films doped with 1 wt% MgO, the relative permittivity and dielectric loss were 1581 and 1.4 % at 1 MHz.