• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2007.06a
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• pp.517-520
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• 2007

The BSCCO thin film fabricated by using the layer by layer deposition method was compared with the BSCCO thin film fabricated by using the evaporation method. Reevaporation in the form of Bi atoms or $Bi_2O_3$molecules easily bring out the deficiency of Bi atoms in thin film due to the long sputtering time of the layer by layer deposition. On the other hand, the respective atom numbers corresponding to BSCCO phase is concurrently supplied on the film surface in the evaporation deposition process and leads to BSCCO phase formation. Also, it is cofirmed that by optimizing the deposition condition, each single phase of the Bi2201 phase and the Bi2212 phase can be fabricated, the sticking coefficient of Bi element is clearly related to the changing of substrate temperature and the formation of the Bi2212 phase.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.11
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• pp.997-1002
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• 2002

BSCCO thin films are fabricated by an ion beam sputtering method, and sticking coefficients of the respective elements are evaluated. The sticking coefficient of Bi element in BSCCO film formation was observed to show a unique temperature dependence; it was almost a constant value of 0.49 below about 730$^{\circ}C$ and decreased linearly over about 730$^{\circ}C$ In contrast, Sr and Ca, displayed no such remarkable temperature dependence. This behavior of the sticking coefficient was explained consistently on the basis of the evaporation and sublimation processes of Bi$\sub$2/O$\sub$3/. It was concluded that Bi(2212) thin film constructs from the partial melted Bi(2201) phase with the aid of the liquid phase of Bi$\sub$2/O$\sub$3/.

• Transactions on Electrical and Electronic Materials
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• v.2 no.4
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• pp.11-14
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• 2001

Phase intergrowth in BSCCO thin films has been Investigated. It turfed out from XRD analyses of these phases that molar fraction of each constituent phase in the intergrowth thin film can be exhibited as a function of substrate temperature and ozone pressure. Super- conducting behavior of the intergrowth thin aim Is also discussed.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2002.11a
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• pp.796-799
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• 2002

BSCCO thin films are fabricated via a co-deposition process at an ultra-low growth rate using ion beam sputtering. The sticking coefficient of Bi element exhibits a characteristic temperature dependence. This temperature dependence of the sticking coefficient was explained consistently on the basis of the evaporation and sublimation processes of Bi$_2$O$_3$.

• Proceedings of the KIEE Conference
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• 1999.11d
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• pp.929-931
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• 1999

BSCCO thin films have been fabricated by co-deposition at an ultralow growth rate using ion beam sputtering(IBS) method. Bi 2212 phase appeared in the temperature range of 750 and $795^{\circ}C$ and single phase of Bi 2201 existed in the lower region than $785^{\circ}C$. Whereas, ozone gas pressure dependance on structural formation was scarcely observed regardless of the pressure variation. And high quality of c-axis oriented Bi 2212 thin film with $T_c$(onset) of about 90 K and $T_c$(zero) of about 45 K is obtained. Only a small amount of CuO in some films was observed as impurity, and no impurity phase such as $CaCuO_2$ was observed in all of the obtained films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.213-216
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• 1999

BSCCO thin films are fabricated via a co-deposition process by an ion beam sputtering with an ultra-low growth rate, and sticking coefficients of the respective elements are evaluated. The sticking coefficient of Bi element exhibits a characteristics temperature dependence : almost a constant value of 0.49 below 730$^{\circ}C$ and decreases linearly with temperature over 730$^{\circ}C$. This temperature dependence can be elucidated from the evaporation and sublimation rates of bismuth oxide, Bi$_2$O$_3$ from the film surface. It is considered that the liquid phase of the bismuth oxide plays an important role in the Bi(2212) phase formation in the co-deposition process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.250-254
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• 2000

High temperature superconducting films deposited on metal Ag wire were prepared with YBCO powders by electrophoretic deposition method. $I_2$was used as additives for surface charge of YBCO particles. When 2~3 wt.% $BaF_2$ was added in the YBCO suspension, the pores and cracks of film surface were decreased and film density could be increased. In case of YBCO films, the critical current density ($J_{c}$) was calculated at the value of $1458{\;}A/\textrm{cm}^2$ (77K, 0K) by 4 point prove method.

• Proceedings of the KWS Conference
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• 2007.11a
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• pp.282-284
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• 2007

The superconductor characteristics of BSCCO spray films by Heat treatment was studied. $Bi_2Sr_2CaCu_2O_x$(Bi-2212) is high-Tc superconductor(HTS) coatings have been prepared by Heat treatment. Where high current carrying capabilities are required and therefore thick film and bulk material are called for, the Bi2Sr2Ca1Cu2O8-d(Bi-2212)compound has evoleved as one of the most promising. and the Bi-2212 HTS coating layer is synthesized through the peritectic reaction between Sr-Ca-Cu oxide coating layer and Bi-Cu oxide coating layer by partial melting process. The superconducting characteristics depends on the spray distance which was related to the spray particle melt. The Bi-2212 HTS layer consists of the whisker growth and secondary phase in 2212 layer were observed.

• Transactions on Electrical and Electronic Materials
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• v.3 no.2
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• pp.20-23
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• 2002

Temperature (T) dependence of the sheet resistance (R$\_$$\square$/) has been investigated an the c-axis oriented thin films of the (Bi2212/Bi2201) mixed crystal with different molar fractions. The R$\_$$\square$/-T superconducting characteristic deteriorated with reduction of the Bi2212 fraction, and almost disappears at 48 mol% where a superconductor-to-insulator transition too k place, with the resistance on the normal state, R$\_$N/, reaching 4.1 kΩka at 80 K. This R$\_$$\square$/ value is close to the universal quantum number, h/(2e)$_2$≡ 6.5 kΩ predicted by the Kosterlitz-Thouless (KT) transition theory. The R$\_$$\square$/-T characteristics of the 48 mol% thin film can be elucidated as a competitive process of KT transition brought about by charge or vortex in the two-dimensional layer structure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.10a
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• pp.40-44
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• 2000

$Bi_2Sr_2Ca_nCu_{n+1}O_y$($n{\geq}0$; BSCCO)thin film is fabricated via two different processes using an ion beam sputtering method i.e. co-deposition and layer-by-layer deposition. A single phase of Bi2212 can be fabricated via the co-deposition process. While it cannot be obtained by the layer-by-layer process. Ultra-low growth rate in our ion beam sputtering system brings out the difference in Bi element adsorption between the two processes and results in only 30% adsorption against total incident Bi amount by layer-by-layer deposition, in contrast to enough Bi adsorption by co-deposition.