• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.10a
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• pp.45-49
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• 2000

An ozone condenser by a selective adsorption on the silica gel surface is constructed. Ozone density is evaluated by three methods; ultraviolet absorption, thermal decomposition and Q-mass analyzing methods. Thermal decomposition method is found to be available to the density evaluation from dilute to highly condensed ozone. The highest ozone density condensed by the adsorption method is evaluated to be 97 mol%.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.8
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• pp.736-741
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• 2002

Phase intergrowth some kinds of the $Bi_2Sr_2Ca_{n-1}Cu_nO_y$ phases is observed in the thin film fabrication at ultralow co-deposition with multi targets by means of ion beam sputtering. The molar fraction of the Bi2212 phase in the mixed crystal of the grown films is investigated as a function of the applied ozone pressure and the substrate temperature. The activation energy for the phase transformation from the Bi2201 to the Bi2212 is estimated in terms of the Avrami equation. This study reveals that the formation of a liquid phase contributes significantly to the construction of the Bi2212 phase in the thin films, differing from the bulk synthesis.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05c
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• pp.208-211
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• 2002

$Bi_2Sr_2CuO_x$(Bi-2201) thin films were fabricated by atomic layer-by-layer deposition using an ion beam sputtering method. 10 wt% and 90 wt% ozone mixed with oxygen were used with ultraviolet light irradiation to assist oxidation. At early stages of the atomic layer by layer deposition, two dimensional epitaxial growth which covers the substrate surface would be suppressed by the stress and strain caused by the lattice misfit, then three dimensional growth takes place. Since Cu element is the most difficult to oxidize, only Sr and Bi react with each other predominantly, and forms a buffer layer on the substrate in an amorphous-like structure, which is changed to $SrBi_2O_4$ by in-situ anneal.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.212-217
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• 2000

Bi$_2$Sr$_2$CuO$_{x}$(Bi-2201) thin films have been fabricated by atomic layer-by-layer deposition using ion beam sputtering(IBS) process. During the deposition, 14 wt%-ozone/oxygen mixture gas of typical pressure of 5.0$\times$10$^{-5}$ Torr is supplied with ultraviolet light irradiation for oxidation. XRD and RHEED investigations reveal that a buffer layer with compositions different from Bi-2201 is formed at the early deposition stage of less than 10 units cell and then Bi-2201 oriented along the c-axis is grown.n.

• Transactions on Electrical and Electronic Materials
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• v.3 no.2
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• pp.32-37
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• 2002

This paper gives the basic mechanical properties of indium-tin-oxide (ITO) films on polymer substrates which are exposed to externally and thermally induced bending force. By using modified Storney formula including triple layer structure and bulge test measuring the conductive changes of patterned ITO islands as a function of bending curvature, the mechanical stability of ITO films on polymer substrates was intensively investigated. The numerical analyses and experimental results show thermally and externally induced mechanical stresses in the films are responsible for the difference of thermal expansion between the ITO film and the substrate, and leer substrate material and its thickness, respectively. Therefore, a gradually ramped heating process and an organic buffer layer were employed to improve the mechanical stability, and then, the effects of the buffer layer were also quantified in terms of conductivity-strain variations. As a result, it is uncovered that a buffer layer is also a critical factor determining the magnitude of mechanical stress and the layer with the Young's modulus lower than a specific value can contribute to relieving the mechanical stress of the films.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.10
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• pp.788-792
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• 2010

The yttrium-barium-copper-oxide (YBCO) coated conductor, which supplement the fault of the existing superconducting current-limit materials YBCO thin film, bismuth-strontium-calcium-copper-oxide(BSCCO) wire and bulk, has been improved its mechanical weakness and has high index; hence, after quench YBCO coated conductor could limit the fault current effectively because of fast resistance occurrence speed. Furthermore, it has wide applicable area as an current limit material because it shows different resistance occurrence tendency by the thickness and kind of stabilization material sputtered on the superconducting layer. Therefore, many researchers are carrying out the study of application of YBCO coated conductor to superconducting fault current limiter (SFCL) for making high quality current limit element, based on resistance type. On the other hand, the study for other type except resistance type has been rarely conducted for the application of YBCO coated conductor to SFCL as an current limit element. Consequently, in this study, YBCO coated conductor with different stabilization layer Cu and Stainless steel, is applied to SFCL using iron core and coil, and examine the many index points as an current limit element, such as current limit characteristic, the tendency of resistance occurrence, response time, the temperature trend for stability.