• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.10-10
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• 2009

Transparent BNO thin films were grown on Al-doped ZnO (AZO)/Ag/AZO/polyethersulfon (PES) (abbreviated as AAAP) transparent electrodes at a low temperature by the NCD technique. The BNO films grown on the crystallized AZO/Ag/AZO (AAA) electrodes exhibit an amorphous phase with a root mean square (rms) roughness of approximately 2 nm in the range of deposition temperature. The capacitors (Pt/BNO/AAAP) with BNO films grown at $100^{\circ}C$ show a dielectric constant of 24 and dissipation factor of 8% at 100 kHz, a leakage current density of about $8{\times}10^{-6}A/cm^2$ at an applied voltage of 1.0V. The optical transmittances of the BNO/AAAP exhibited above 80% at wavelength of 550nm at all of deposition temperature. The mechanical stability of the BNO/AAA as well as AAA electrode with the PES substrates through the bending was ensured for flexible electronic device applications. The transparent BNO capacitors grown on AAAP are powerful candidate for integration with the transparent solar cells.

• Korean Journal of Veterinary Research
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• v.59 no.1
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• pp.33-36
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• 2019

This study examined complex infections with various enteropathogens and the genetic diversity of bovine norovirus (BNoV) in 932 fecal samples from diarrheic calves in South Korea. Overall, seventeen (1.8%) of the samples tested positive for BNoV following RT-PCR examination. All BNoV-positive samples were co-infected with other intestinal pathogens, including bovine Rotavirus, Giardia, Cryptosporidium, and Escherichia coli. The genetic diversity of the BNoVs shared high nucleotide identity (98.1-99.5%) and amino acid homology (93.5-98.1%) with genotype 2 BNoV (GIII.2) strains. In conclusion, BNoV infections with GIII genotypes were detected in complex infections of diarrheic calves in South Korea.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.42-42
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• 2007

In the future, electronic components will be integrated on flexible polymer substrates and then miniaturized by thin films using suitable thin film technologies. In this article, the concept of a room temperature CVD is demonstrated using $Bi_3NbO_7$ (BNO) films with a cubic fluorite structure and their structural and electrical properties were investigated in films deposited without substrate heating. Effects of substrate temperature on electrical properties of BNO films were also studied. Films deposited without substrate heating (real temperature of $50^{\circ}C$) show partially crystallized BNO single phases with grain size of approximately 6.5 nm. Their dielectric and leakage properties are comparable to those of films deposited by pulsed laser deposition at room temperature. The concept of room temperature CVD will become a new paradigm in the deposition of dielectric thin films for flexible electron device applications.