• 반도체디스플레이기술학회지
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• 제6권1호
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• pp.27-30
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• 2007

The gigahertz oscillator behavior of double-walled boron-nitride nanotube (BNNT) was investigated by using classical molecular dynamics simulations. The BNNT oscillator characteristics were compared to carbon-nanotube (CNT) and hybrid-C@BNNT oscillators. The results show that the BNNT oscillators are higher than the van der Waals force of the CNT oscillator. Since the frictional effects of BNNT oscillators are higher than that of a CNT oscillator, the damping factors of BNNT and hybrid oscillators are higher than that of a CNT oscillator.

• 반도체디스플레이기술학회지
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• 제3권3호
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• pp.23-25
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• 2004

The defect formation energy of boron nitride (BN) nanotubes is investigated using molecular-dynamics simulation. Although the defect with tetragon-octagon pairs (4-88-4) is favored in the flat cap of BN nanotubes, BN clusters, and the growth of BN nanotubes, the formation energy of the 4-88-4 defect is significantly higher than that of the pentagon-heptagon pairs (5-77-5) defect in BN nanotubes. The 5-77-5 defect reduces the effect of the structural distortion caused by the 4-88-4 defect, in spite of homoelemental bonds.

• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2004년도 춘계학술대회 발표 논문집
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• pp.59-62
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• 2004

The defect formation energy of boron nitride (BN) nanotubes is investigated using molecular-dynamics simulation. Although the defect with tetragon-octagon pairs (4-88-4) is favored in the flat cap of BN nanotubes, BN clusters, and the growth of BN nanotubes, the formation energy of the 4-88-4 defect is significantly higher than that of the pentagon-heptagon pairs (5-77-5) defect in BN nanotubes. The 5-77-5 defect reduces the effect of the structural distortion caused by the 4-88-4 defect, in spite of homoelemental bonds. The instability of the 4-88-4 defect generates the structural transformation into BNNTs with no defect at about 1500 K.

• 한국자기학회지
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• 제19권2호
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• pp.43-46
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• 2009

지그재그 형태의 (8, 0) BN 나노튜브에서 B 또는 N을 전이금속인 Fe, Co, 또는 Ni로 치환했을 때, 결합길이와 자기모멘트 등 구조적, 자기적 성질을 제일원리계산 방법으로 연구하였다. 전이금속이 치환하게 되면 원래 원 모양이었던 단면의 형태가 찌그러진 타원 모양으로 바뀌게 되며, 결합길이도 원래의 BN 나노튜브에서 B-N의 결합길이보다 길어지는 것으로 계산되었다. 자기모멘트는 B을 치환했을 때가 N을 치환한 경우보다 더 크게 나타났으며, 주로 3d 전자가 자기모멘트 값에 기여한다는 것을 상태밀도 그림으로부터 알 수 있었다.

• 전기학회논문지
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• 제59권4호
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• pp.743-748
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• 2010

Boron nitride (BN) and carbon nitride (CN) films, which have relatively low work functions and commonly exhibit negative electron affinity behaviors, were coated on carbon nanotubes (CNTs) by magnetron sputtering. The CNTs were directly grown on metal-tip (tungsten, approximately 500nm in diameter at the summit part) substrates by inductively coupled plasma-chemical vapor deposition (ICP-CVD). The variations in the morphology and microstructure of CNTs due to coating of the BN and CN films were analyzed by field-emission scanning electron microscopy (FE-SEM). The energy dispersive x-ray (EDX) spectroscopy and Raman spectroscopy were used to identify the existence of the coated layers (CN and BN) on CNTs. The electron-emission properties of the BN-coated and CN-coated CNT-emitters were characterized using a high-vacuum field emission measurement system, in terms of their maximum emission currents ($I_{max}$) at 1kV and turn-on voltage ($V_{on}$) for approaching $1{\mu}A$. The results showed that the $I_{max}$ current was significantly increased and the $V_{on}$ voltage were remarkably reduced by the coating of CN or BN films. The measured values of $I_{max}-V_{on}$ were as follows; $176{\mu}A$-500V for the 5nm CN-coated emitter and $289{\mu}A$-540V for the 2nm BN-coated emitter, respectively, while the $I_{max}-V_{on}$ of the as-grown (i.e., uncoated) emitter was $134{\mu}A$-620V. In addition, the CNT emitters coated with thin CN or BN films also showed much better long-term (up to 25h) stability behaviors in electron emission, as compared with the conventional CNT emitter.

• 한국분말재료학회지
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• 제25권2호
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• pp.120-125
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• 2018

Boron nitride nanotubes (BNNTs) are receiving great attention because of their unusual material properties, such as high thermal conductivity, mechanical strength, and electrical resistance. However, high-throughput and high-efficiency synthesis of BNNTs has been hindered due to the high boiling point of boron (${\sim}4000^{\circ}C$) and weak interaction between boron and nitrogen. Although, hydrogen-catalyzed plasma synthesis has shown potential for scalable synthesis of BNNTs, the direct use of $H_2$ gas as a precursor material is not strongly recommended, as it is extremely flammable. In the present study, BNNTs have been synthesized using radio-frequency inductively coupled thermal plasma (RF-ITP) catalyzed by solid-state ammonium chloride ($NH_4Cl$), a safe catalyst materials for BNNT synthesis. Similar to BNNTs synthesized from h-BN (hexagonal boron nitride) + $H_2$, successful fabrication of BNNTs synthesized from $h-BN+NH_4Cl$ is confirmed by their sheet-like properties, FE-SEM images, and XRD analysis. In addition, improved dispersion properties in aqueous solution are found in BNNTs synthesized from $h-BN+NH_4Cl$.