• Title/Summary/Keyword: BN

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Alignment and lattice quality of hexagonal rings of hexagonal BN films synthesized by ion beam assisted deposition (이온빔보조증착법으로 합성한 hexagonal BN막의 hexagonal ring의 배열과 결정성)

  • 박영준;한준희;이정용;백영준
    • Journal of the Korean Vacuum Society
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    • v.8 no.1
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    • pp.43-50
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    • 1999
  • We have studied the alignment and the lattice quality of hexagonal rings of h-BN films synthesized by ion beam assisted deposition (IBAD) method. Boron was e-beam evaporated at 1.5 $\AA$/sec and nitrogen gas was ionized using end-hall type ion gun at 60, 80, and 100 eV, respectively. Substrate was either not heated or heated at 200, 400, 500, and $800^{\circ}C$, respectively. As nitrogen ion energy increases, c-axes of hexagonal rings tend to align parallel to the substrate, which is explained by larger compressive stress at higher ion energies. Alignment of c-axis increases with temperature and shows maximum around $400^{\circ}C$. The lattice quality of hexagonal rings improves with temperature. Such behaviors can be understood from two counter trends of increasing the atomic mobility and decreasing compressive stress with temperature. Hardness of h-BN films shows the same trend with the alignment of c-axis. Ion beam assisted deposition method seems to be effective for aligning hexagonal rings and optimizing h-BN properties.

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Effect of Moisture in a Vacuum Chamber on the Deposition of c-BN Thin Film using an Unbalanced Magnetron Sputtering Method (비대칭 마그네트론 스퍼터링 방법에 의한 질화붕소막의 증착시 반응실내의 초기 수분이 입방정질화붕소 박막의 형성에 미치는 영향)

  • Lee, Eun-Sook;Park, Jong-Keuk;Lee, Wook-Seong;Seong, Tae-Yeon;Baik, Young-Joon
    • Journal of the Korean Ceramic Society
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    • v.49 no.6
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    • pp.620-624
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    • 2012
  • The role of moisture remaining inside the deposition chamber during the formation of the cubic boron nitride (c-BN) phase in BN film was investigated. BN films were deposited by an unbalanced magnetron sputtering (UBM) method. Single-crystal (001) Si wafers were used as substrates. A hexagonal boron nitride (h-BN) target was used as a sputter target which was connected to a 13.56 MHz radiofrequency electric power source at 400 W. The substrate was biased at -60 V using a 200 kHz high-frequency power supply. The deposition pressure was 0.27 Pa with a flow of Ar 18 sccm - $N_2$ 2 sccm mixed gas. The inside of the deposition chamber was maintained at a moisture level of 65% during the initial stage. The effects of the evacuation time, duration time of heating the substrate holder at $250^{\circ}C$ as well as the plasma treatment on the inside chamber wall on the formation of c-BN were studied. The effects of heating as well as the plasma treatment very effectively eliminated the moisture adsorbed on the chamber wall. A pre-deposition condition for the stable and repeatable deposition of c-BN is suggested.

c-BN 박막의 박리특성 향상에 관한 연구

  • 이성훈;변응선;이건환;이구현;이응직;이상로
    • Proceedings of the Korean Vacuum Society Conference
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    • 2000.02a
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    • pp.124-124
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    • 2000
  • 다이아몬드에 버금가는 높은 경도뿐만 아니라 높은 화학적 안정성 및 열전도성 등 우수한 물리화학적 특성을 가진 입방정 질화붕소(cubic boron nitride)는 마찰.마모, 전자, 광학 등의 여러 분야에서의 산업적 응용이 크게 기대되는 재료이다. 특히 탄화물형성원소에 대해 안정하여 철계금속의 가공을 위한 공구재료로의 응용 또한 크게 기대된다. 이 때문에 각종의 PVD, CVD 공정을 이용하여 c-BN 박막의 합성에 대한 연구가 광범위하게 진행되어 많은 성공사례들이 보고되고 있다. 그러나 c-BN 박막의 유용성에도 불구하고 아직 실제적인 응용이 이루어지지 못한 것은 c-BN 박막의 증착직후 급격한 박리현상 때문이다. 본 연구에서는 평행자기장을 부가한 ME-ARE(Magnetically Enhanced Activated Reactive Evaporation)법을 이용한 c-BN 박막의 합성에서 적용한 증착공정 인자들의 변화에 따른 박리특성 고찰과 함께 다층박막화 및 제 3원소 혼입 방법을 적용하여 박리특성 향상 정도를 조사하였다. BN 박막합성은 전자총에 의해 증발된 보론과 (질소+아르곤) 플라즈마의 활성화반응증착(Activated Reactive Evaporation)에 의해 이루어졌다. 기존의 ARE 장치와 달리 열음극(got cathode)과 양극(anode) 사이에 평행자기장을 부가하여 플라즈마의 증대시켜 반응효율을 높였다. 합성실험용 모재로는 p-type으로 도핑된 (100) Si웨이퍼를 30$\times$40mmzmrl로 절단 후, 10%로 희석된 완충불산용액에 10분간 침적하여 표면의 산화층을 제거한 후 사용하였다. 박막실험실에서의 주요공정변수는 기판바이어스 전압, discharge 전류, Ar/N2가스유량비이었다. 합성된 박막의 결정성 분석을 FTIR을 이용하였으며, BN 박막의상 및 미세구조관찰을 위해 투과전자현미경(TEM;Philips EM400T) 분석을 병행하였고, 박막의 기계적 물성 평가를 위해 미소경도를 측정하였다. 박리특성의 고찰은 대기중에서의 자발적 박리가 일어나 90%이상의 박리가 진행된 시점까지의 시간을 측정하였고, 증착직후 박막의 잔류응력 변화와 연관하여 고찰해 보았다.

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Optimized Decomposition of Ammonia Borane for Controlled Synthesis of Hexagonal Boron Nitride Using Chemical Vapor Deposition

  • Han, Jaehyu;Kwon, Heemin;Yeo, Jong-Souk
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.08a
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    • pp.285-285
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    • 2013
  • Recently, hexagonal boron nitride (h-BN), which is III-V compound of boron and nitride by strong covalent sp2 bonds has gained great interests as a 2 dimensional insulating material since it has honeycomb structure with like graphene with very small lattice mismatch (1.7%). Unlike graphene that is semi-metallic, h-BN has large band gap up to 6 eV while providing outstanding properties such as high thermal conductivity, mechanical strength, and good chemical stability. Because of these excellent properties, hBN can potentially be used for variety of applications such as dielectric layer, deep UV optoelectronic device, and protective transparent substrate. Low pressure and atmospheric pressure chemical vapor deposition (LPCVD and APCVD) methods have been investigated to synthesize h-BN by using ammonia borane as a precursor. Ammonia borane decomposes to polyiminoborane (BHNH), hydrogen, and borazine. The produced borazine gas is a key material that is a used for the synthesis of h-BN, therefore controlling the condition of decomposed products from ammonia borane is very important. In this paper, we optimize the decomposition of ammonia borane by investigating temperature, amount of precursor, and other parameters to fabricate high quality monolayer h-BN. Synthesized h-BN is characterized by Raman spectroscopy and its absorbance is measured with UV spectrophotometer. Topological variations of the samples are analyzed by atomic force microscopy. Scanning electron microscopy and Scanning transmission Electron microscopy are used for imaging and analysis of structures and surface morphologies.

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Effect of Oxygen Addition on Residual Stress Formation of Cubic Boron Nitride Thin Films (입방정 질화붕소 박막의 잔류응력 형성에 미치는 산소 첨가 효과)

  • Jang, Hee-Yeon;Park, Jong-Keuk;Lee, Wook-Seong;Baik, Young-Joon;Lim, Dae-Soon;Jeong, Jeung-Hyun
    • Journal of Surface Science and Engineering
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    • v.40 no.2
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    • pp.91-97
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    • 2007
  • In this study we investigated the oxygen effect on the nucleation and its residual stress during unbalanced magnetron sputtering. Up to 0.5% in oxygen flow rate, cubic phase (c-BN) was dominated with extremely small fraction of Hexagonal phase (h-BN) of increasing trend with oxygen concentration, whereas hexagonal phase is dominated beyond 0.75% flow rate. Interestingly, the residual stress in cubic-phase-dominated films was substantially reduced with small amount of oxygen (${\sim}0.5%$) down to a low value comparable to the h-BN case. This may be because oxygen atoms break B-N $sp^3$ bonds and make B-O bonds more favorably, increasing $sp^2$ bonds preference, as revealed by FTIR and NEXAFS. It was confirmed by experimental facts that the threshold bias voltage for nucleation and growth of cubic phase were increased from -55 V to -70 V and from -50 V to -60 V respectively. The reduction of residual stress in O-added c-BN films is seemingly resulting from the microstructure of the films. The oxygen tends to increase slightly the amount of h-BN phase in the grain boundary of c-BN and the soft h-BN phase of 3D network including surrounding nano grains of cubic phase may relax the residual stress of cubic phase.

Frictional Properties of Two-dimensional Materials against Spherical and Flat AFM Tips (구형 및 평면 원자현미경 탐침에 대한 2차원 소재의 마찰 특성)

  • Tran-Khac, Bien-Cuong;Chung, Koo-Hyun
    • Tribology and Lubricants
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    • v.35 no.4
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    • pp.199-205
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    • 2019
  • Two-dimensional materials such as graphene, h-BN, and $MoS_2$ have attracted increased interest as solid lubricant and protective coating layer for nanoscale devices owing to their superior mechanical properties and low friction characteristics. In this work, the frictional properties of single-layer graphene, h-BN, and $MoS_2$ are experimentally investigated under various normal forces using atomic force microscope (AFM) tips with a spherical and flat end, with the aim to gain a better understanding of frictional behaviors. The nonlinear relationship between friction and normal force friction was clearly observed for single-layer graphene, h-BN, $MoS_2$ specimens slid against the spherical and flat AFM tips. The results also indicate that single-layer graphene, h-BN, $MoS_2$ exhibit low frictional properties (e.g., friction coefficient below 0.1 under 70~100 nN normal force). In particular, graphene is found to be superior to h-BN and $MoS_2$ in terms of frictional properties. However, the friction of single-layer graphene, h-BN, $MoS_2$ against the flat tip is larger than that against the spherical tip, which may be attributed to the relatively large adhesion. Furthermore, it is shown that the fluctuation of friction is more significant for the flat tip than the spherical tip. The resutls of this study may be helpful to elucidate the feasibility of using two-dimensional materials as solid lubricant and protective coating layer for nanoscale devices.

Genetic Transformation of Chrysanthemum with Cold Regulated Gene (BN115) (저온저항성 유전자를 이용한 국화 형질전환)

  • Han, Soo-Gon;Choi, In-Young;Kang, Chan-Ho;Ko, Bok-Rai;Choi, Joung-Sik;Lee, Wang-Hyu
    • Journal of Plant Biotechnology
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    • v.33 no.1
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    • pp.19-25
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    • 2006
  • With the use of Agrobacterium and gene-gun, cold regulated gene (BN115) has been injected in Chrysanthemum leaf disc and transgenic plants have been produced successfully on the selection media containing phytohormone. To determine the presence of the transferred cold regulated gene (BN115) in the transgenic Chrysanthemum, PCR-amplification indicated the presence of that gene. Real-Time PCR for confirmation of the putative transgenic plants was established. The copy number of cold regulated gene (BN115) is extrapolated on the basis of a standard curve. Serial dilutions of known number of gene copies were in triplicates. In this diagram, PCR cycles are plotted against the fluorescence intensity. The cycle at which the fluorescence reaches a threshold cycle is inversely proportional to the starting amount of target DNA.

Predictive Bayesian Network Model Using Electronic Patient Records for Prevention of Hospital-Acquired Pressure Ulcers (전자의무기록을 이용한 욕창발생 예측 베이지안 네트워크 모델 개발)

  • Cho, In-Sook;Chung, Eun-Ja
    • Journal of Korean Academy of Nursing
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    • v.41 no.3
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    • pp.423-431
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    • 2011
  • Purpose: The study was designed to determine the discriminating ability of a Bayesian network (BN) for predicting risk for pressure ulcers. Methods: Analysis was done using a retrospective cohort, nursing records representing 21,114 hospital days, 3,348 patients at risk for ulcers, admitted to the intensive care unit of a tertiary teaching hospital between January 2004 and January 2007. A BN model and two logistic regression (LR) versions, model-I and .II, were compared, varying the nature, number and quality of input variables. Classification competence and case coverage of the models were tested and compared using a threefold cross validation method. Results: Average incidence of ulcers was 6.12%. Of the two LR models, model-I demonstrated better indexes of statistical model fits. The BN model had a sensitivity of 81.95%, specificity of 75.63%, positive and negative predictive values of 35.62% and 96.22% respectively. The area under the receiver operating characteristic (AUROC) was 85.01% implying moderate to good overall performance, which was similar to LR model-I. However, regarding case coverage, the BN model was 100% compared to 15.88% of LR. Conclusion: Discriminating ability of the BN model was found to be acceptable and case coverage proved to be excellent for clinical use.

Analysis of the rate-distortion parameters between inter prediction modes in HEVC (HEVC에서 화면 간 예측 모드들 간의 율-왜곡 파라미터 분석)

  • Baek, Seung-Yong;Lee, Jae-Yong;Cho, Hye-Jeong;Chung, Kwang-Sue;Oh, Seoung-Jun
    • Proceedings of the Korean Society of Broadcast Engineers Conference
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    • 2011.07a
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    • pp.177-179
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    • 2011
  • 최근 표준화가 진행되고 있는 HEVC는 H.264/AVC의 기본 구조를 유지하면서 각 부호화기의 성능을 향상시키는 방향으로 진행되고 있다. 기존의 H.264/AVC는 화면 간 예측에서 예측 정보를 보내지 않고 복호화가 가능한 SKIP 모드와 예측 정보를 보내주는 화면 간 예측 모드들을 사용한다. 그런데 SKIP 모드는 율-왜곡 측면에서 극단적인 특성을 갖기 때문에 SKIP 모드와 다른 화면 간 예측 모드들 사이에 넓은 율-왜곡 파라미터 간격이 존재하며, 이는 화질 저하의 원인이 된다. 본 논문에서는 HEVC에서도 동일한 문제점이 존재하는지 분석하기 위해 SKIP 모드와 화면 간 예측 모드들의 율-왜곡 파라미터에 대한 분석을 수행하였다. 분석 결과를 바탕으로 HEVC에서도 부호화 효율을 향상시키기 위하여 새로운 화면 간 예측 모드가 필요함을 보였다.

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