• 한국항행학회논문지
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• 제12권6호
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• pp.619-626
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• 2008

본 논문에서는 무선센서네트워크에서 미지의 노드 위치를 추정하기 위하여 VRN을 이용한 수신신호 세기 기반의 협력 위치 추정 알고리즘을 제안하였다. 제안한 위치추정 시스템은 모든 노드들을 모니터링하고 중첩 영역의 반복적 이용과 협력적 위치추정을 통해 BN의 좌표를 추정하였다. 실험결과 협력위치 추정시 반복횟수가 증가함에 따라 BN의 존재가능 영역이 줄어듦을 확인하였으며, RN의 수가 적을수록 최소 4회 이상의 반복적인 위치추정 횟수가 확보되어야만 BN의 존재가능 영역이 현저히 협소해짐을 보였다. 또한 위치추정 오차거리는 RN의 수가 4개인 경우에도 기존의 위치추정 알고리즘에 비해 약 71.6%의 성능이 향상되었다. 따라서 본 논문에서 제안한 VRN을 활용한 위치추정 알고리즘이 기존의 RSS기반의 위치추정 알고리즘에 비해 우수한 위추정 성능이 나타남을 확인하였다.

• 한국공작기계학회논문집
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• 제13권2호
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• pp.33-39
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• 2004

Sandblasting has recently been developed into a powder blasting technique for brittle materials. In this study, the machinability of $Si_3N_4$-hBN based machinable ceramics are evaluated for micro - pattern making processes using powder blasting. Material properties of the developed machinable ceramics according to the variation of h-BN contents give a good machinability to the ceramics. The effect of scanning times, the size of patterns and variation of BN contents on the erosion depth of samples without mask and samples with different mask patterns in powder blasting of $Si_3N_4$-hBN ceramics are investigated. The Parameters are the impact angle of $90^{\circ}$, the scanning times of nozzle up to 40, and the stand-off distances of 100mm The widths of masked pattern are 0.1mm 0.5mm and 1mm. The powder used is Alumina particles, WA#600. and the blasting pressure of powder is 0.2MPa. Through required experiments, the results are investigated and analyzed. As the results, the machinability of the developed ceramics increases as the BN contents in the ceramics.

• 한국표면공학회지
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• 제41권2호
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• pp.43-47
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• 2008

Cubic boron nitride(c-BN) films were deposited on tungsten carbide insert tool by microwave plasma enhanced chemical vapor deposition(MPECVD) from a gas mixture of triethyl borate$(B(C_2H_5O)_3)$, ammonia $(NH_3)$, hydrogen$(H_2)$ and argon(Ar). The qualities of deposited thin film were investigated by x-ray diffrac-tion(XRD), field emission scanning electron microscopy(FE-SEM) and micro Raman spectroscope. The surface morphologies of the synthesised BN as well as crystallinity appear to be highly dependent on the flow rate of $B(C_2H_5O)_3$ and $(NH_3)$ gases. The deposited film had more crystallized phases with 5 scem of $B(C_2H_5O)_3$ and $(NH_3)$ gases than with 2 sccm, and the phase was identified as c-BN by micro Raman spectroscope and XRD. The adhesion strength were also increased with increasing flow rates of $B(C_2H_5O)_3$ and $(NH_3)$ gases.

• 한국정밀공학회지
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• 제25권7호
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• pp.47-54
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• 2008

Recently, application of ceramics has increased gradually due to excellent mechanical properties. Si3n4-BN ceramic which is one of ceramics is very hard and has superior resistance against volatile temperature and wear. However, extremely high hardness of the $Si_3N_4-BN$ ceramic makes conventional machining very difficult. Therefore, the use of machinable ceramic has been in a poor because of difficult industrial processes in spite of many advantages. And so new technology being called IED(In-process electrolytic dressing) was introduced to solve this problem. The aim of this study is to determine the machining characteristics in terms of pressurized weight to the workpiece and the influence with h-BN content using IED lapping system. Also, Acoustic Emission (AE) is used for the monitoring of surface characteristics.

• 한국자원식물학회지
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• 제28권6호
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• pp.675-681
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• 2015

β amyloid protein (Aβ) plays a critical role in the pathogenesis of Alzheimer's disease (AD) and possibly in Aβ-induced mitochondrial dysfunction and oxidative stress. Aβ can directly cause reactive oxygen species (ROS) production. Overproduction of ROS is considered to be involved in the pathogenesis of neurodegeneration of AD. Here, we investigated 9 kinds of ramie (Boehmeria nivea, (L.) Gaud., BN; hereafter denoted as BN) for their protective action against oxidative stress in a cellular system using C6 glial cells. We observed loss of cell viability and high levels of ROS generation after treatment with hydrogen peroxide (H₂O₂) and Aβ_25-35. However, treatments with BN extracts led to an increase in cell viability and decrease in ROS production induced by H2O2 and Aβ25-35. In particular, the extracts of BN-01 (seobang variety from Seocheon) and BN-09 (local variety from Yeonggwang) showed excellent anti-oxidative properties. This indicates that BN extracts could prevent neurodegeneration by reducing oxidative stress in cells.

• 한국표면공학회지
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• 제32권3호
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• pp.467-471
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• 1999

BN films were grown on silicon (l00) substrate by magnetically enhanced activated reactive evaporation (ME-ARE) with pulsed DC power instead of r.f. for substrate biasing. The deposited films were analyzed using Fourier transform infrared spectroscopy (FTIR) and transmission electron microscopy (TEM). FTIR results show that the intensity of absorption band of $sp^2$ bond of BN decreased and that of $sp^3$ bond of c-BN increased with increasing pulsed DC bias voltage applied to substrate. The initially grown layer at the interface was observed by TEM and considered to be of$ sp^2$-bonded BN. The cross-sectional and planar TEM micrographs show that the upper layer on the initial layer was the single phase c-BN. It is concluded that cubic boron nitride films could be synthesized by ME-ARE process with pulsed DC biasing.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.286-286
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• 2016

Hexagonal boron nitride (hBN) is a dielectric insulator with a two-dimensional (2D) layered structure. It is an appealing substrate dielectric for many applications due to its favorable properties, such as a wide band gap energy, chemical inertness and high thermal conductivity[1]. Furthermore, its remarkable mechanical strength renders few-layered hBN a flexible and transparent substrate, ideal for next-generation electronics and optoelectronics in applications. However, the difficulty of preparing high quality large-area hBN films has hindered their widespread use. Generally, large-area hBN layers prepared by chemical vapor deposition (CVD) usually exhibit polycrystalline structures with a typical average grain size of several microns. It has been reported that grain boundaries or dislocations in hBN can degrade its electronic or mechanical properties. Accordingly, large-area single crystalline hBN layers are desired to fully realize the potential advantages of hBN in device applications. In this presentation, we report the growth and transfer of centimeter-sized, nearly single crystal hexagonal boron nitride (hBN) few-layer films using Ni(111) single crystal substrates. The hBN films were grown on Ni(111) substrates using atmospheric pressure chemical vapor deposition (APCVD). The grown films were transferred to arbitrary substrates via an electrochemical delamination technique, and remaining Ni(111) substrates were repeatedly re-used. The crystallinity of the grown films from the atomic to centimeter scale was confirmed based on transmission electron microscopy (TEM) and reflection high energy electron diffraction (RHEED). Careful study of the growth parameters was also carried out. Moreover, various characterizations confirmed that the grown films exhibited typical characteristics of hexagonal boron nitride layers over the entire area. Our results suggest that hBN can be widely used in various applications where large-area, high quality, and single crystalline 2D insulating layers are required.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1998년도 제14회 학술발표회 논문개요집
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• pp.120-120
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• 1998

Boron nitride (BN) films have attracted a growing interest for a variety of t technological applications due to their excellent characteristics, namely hardness, c chemical inertness, and dielectrical behavior, etc. There are two crystalline phases 1551; of BN that are analogous to phases of carbon. Hexagonal boron nitride (h-BN) has a a layered s$\sigma$ucture which is spz-bonded structure similar to that of graphite, and is t the stable ordered phase at ambient conditions. Cubic boron nitride (c-BN) has a z zinc blende structure with sp3-bonding like as diamond, 따ld is the metastable phase a at ambient conditions. Among of their prototypes, especially 삼Ie c-BN is an i interesting material because it has almost the same hardness and thermal c conductivity as di없nond. C Conventionally, significant progress has been made in the experimental t techniques for synthesizing BN films using various of the physical vapor deposition 밍ld chemical vapor deposition. But, the major disadvantage of c-BN films is that t they are much more difficult to synthesize than h-BN films due to its narrow s stability phase region, high compression stress, and problem of nitrogen source c control. Recent studies of the metalorganic chemical vapor deposition (MOCVD) of I III - V compound have established that a molecular level understanding of the d deposition process is mandatory in controlling the selectivity parameters. This led t to the concept of using a single source organometallic precursor, having the c constituent elements in stoichiometric ratio, for MOCVD growth of 삼Ie required b binary compound. I In this study, therefore, we have been carried out the growth of h-BN thin f films on silicon substrates using a single source precursors. Polycrystalline h-BN t thin films were deposited on silicon in the temperature range of $\alpha$)() - 900 $^{\circ}$C from t the organometallic precursors of Boron-Triethylamine complex, (CZHs)3N:BRJ, and T Tris(dimethylamino)Borane, [CH3}zNhB, by supersonic molecular jet and remote p plasma assisted MOCVD. Hydrogen was used as carrier gas, and additional nitrogen w was supplied by either aDlIDonia through a nozzle, or nitrogen via a remote plasma. T The as-grown films were characterized by Fourier transform infrared spectroscopy, x x-ray pthotoelectron spectroscopy, Auger electron spectroscopy, x-ray diffraction, t transmission electron diffraction, optical transmission, and atomic force microscopy.roscopy.

• Carbon letters
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• 제12권2호
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• pp.116-119
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• 2011

C/SiC composites were prepared by boron nitride (BN)-assisted liquid silicon infiltration (LSI), and their anti-oxidation and mechanical properties were investigated. The microstructures, bulk densities, and porosities of the C/SiC composites demonstrated that the infiltration of liquid silicon into the composites improved them, because the layered-structure BN worked as a lubricant. Increasing the amount of BN improved the anti-oxidation of the prepared C/SiC composites. This synergistic effect was induced by the assistance of BN in the LSI. More thermally stable SiC was formed in the composite, and fewer pores were formed in the composite, which reduced inward oxygen diffusion. The mechanical strength of the composite increased up to the addition of 3% BN and decreased thereafter due to increased brittleness from the presence of more SiC in the composite. Based on the anti-oxidation and mechanical properties of the prepared composites, we concluded that improved anti-oxidation of C/SiC composites can be achieved through BN-assisted LSI, although there may be some degradation of the mechanical properties. The desired anti-oxidation and mechanical properties of the composite can be achieved by optimizing the BN-assisted LSI conditions.

• 한국정보과학회논문지:시스템및이론
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• 제33권12호
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• pp.885-893
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• 2006

최근 현실 세계의 불확실한 환경을 극복하기 위한 방법 중 하나로 베이지안 네트워크(Bayesian network, BN)가 부각되고 있다. BN의 파라메터 학습은 주어진 평가 척도에 따라 데이타의 훈련집합에 가장 잘 부합되는 네트워크 파라메터를 구하는 것으로, BN 설계에 드는 시간과 노력을 줄이기 위해 연구되어 왔다. 기존의 오프라인 학습은 학습에 필요한 충분한 양의 데이타를 모으기에는 많은 노력과 시간이 필요하다. 또한 현실세계는 불완전성을 포함하고 있어 완전한 데이타를 얻기 힘들다. 본 논문에서는 불완전한 데이타로부터 온라인으로 BN 파라메터를 학습하는 방법을 제안한다. 이 방법은 불완전한 데이타로부터 학습이 가능하도록 하여 학습의 유연성을 높이고, 실시간 학습을 통해 변화하는 환경에 대한 적응성을 높인다. Cohen 등이 제안한 온라인 파라메터 학습방법인 Voting EM 알고리즘과 비교 실험한 결과, 완전한 데이타를 가지고 학습한 경우에는 동일한 학습 결과를, 그리고 불완전한 데이타의 경우에는 보다 나은 학습 결과를 얻었다.