• Title/Summary/Keyword: BM3D

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Attenuation of Hepatic Graft-versus-host Disease in Allogeneic Recipients of MyD88-deficient Donor Bone Marrow

  • Lim, Ji-Young;Lee, Young-Kwan;Lee, Sung-Eun;Ju, Ji-Min;Park, Gyeongsin;Choi, Eun Young;Min, Chang-Ki
    • IMMUNE NETWORK
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    • v.15 no.3
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    • pp.125-134
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    • 2015
  • Acute graft-versus-host-disease (GVHD) is characterized by selective damage to the liver, the skin, and the gastrointestinal tract. Following allogeneic hematopoietic stem cell transplantation, donor bone marrow (BM) cells repopulate the immune system of the recipient. We previously demonstrated that the acute intestinal GVHD (iGVHD) mortality rate was higher in MyD88-deficient BM recipients than that in the control BM recipients. In the present study, the role of MyD88 (expressed by donor BM) in the pathophysiology of hepatic GVHD (hGVHD) was examined. Unlike iGVHD, transplantation with MyD88-deficient T-cell depleted (TCD) BM attenuated hGVHD severity and was associated with low infiltration of T cells into the liver of the recipients. Moreover, GVHD hosts, transplanted with MyD88-deficient TCD BM, exhibited markedly reduced expansion of $CD11b^+Gr-1^+$ myeloidderived suppressor cells (MDSC) in the liver. Adoptive injection of the MDSC from wild type mice, but not MyD88-deficient mice, enhanced hepatic T cell infiltration in the MyD88-deficient TCD BM recipients. Pre-treatment of BM donors with LPS increased MDSC levels in the liver of allogeneic wild type BM recipients. In conclusion, hGVHD and iGVHD may occur through various mechanisms based on the presence of MyD88 in the non-T cell compartment of the allograft.

BM3D and Deep Image Prior based Denoising for the Defense against Adversarial Attacks on Malware Detection Networks

  • Sandra, Kumi;Lee, Suk-Ho
    • International journal of advanced smart convergence
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    • v.10 no.3
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    • pp.163-171
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    • 2021
  • Recently, Machine Learning-based visualization approaches have been proposed to combat the problem of malware detection. Unfortunately, these techniques are exposed to Adversarial examples. Adversarial examples are noises which can deceive the deep learning based malware detection network such that the malware becomes unrecognizable. To address the shortcomings of these approaches, we present Block-matching and 3D filtering (BM3D) algorithm and deep image prior based denoising technique to defend against adversarial examples on visualization-based malware detection systems. The BM3D based denoising method eliminates most of the adversarial noise. After that the deep image prior based denoising removes the remaining subtle noise. Experimental results on the MS BIG malware dataset and benign samples show that the proposed denoising based defense recovers the performance of the adversarial attacked CNN model for malware detection to some extent.

Digital Predistortion Algorithm using Techniques of Temperature Compensation (온도보상 기법을 적용한 디지털 방식의 사전 왜곡제거기 알고리듬)

  • Ko, Young-En;Bang, Sung-Il
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.42 no.9 s.339
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    • pp.1-10
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    • 2005
  • In this paper, we proposed predistortion algerian that can compensate temperature distortion by digital. Predistortion algorithm produces compensation value of distortion by temperature as well as system nonlinear distortion by input level, and warps beforehand signal of baseband. To prove excellency of such algorithm we applied predistortion algorithm to Saleh's high power amplifier model, and did computer simulation. As a result, P1dB increased about 0.5 dBm phase shift reduced about $0.8^{o}$ than existent the A&P PD, and predistiortion algorithm to apply temperature compensation techniques improved P1dB about 2dBm and stabilized phase shift by about $0.1^{o}$ low. When approved UMTS's sample signal to this amplifier, IMD3 of amplifier decreased 10dBm than is no temperature compensation techniques, and reduced 19dBm than signal that is no distortion.

Design and Fabrication of 400 MHz ISM-Band GFSK Transceiver for Data Communication (400 MHz ISM 대역 데이터 통신용 GFSK 송·수신기 설계 및 제작)

  • Lee Hang-Soo;Hong Sung-Yong;Lee Seung-Min
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.17 no.2 s.105
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    • pp.198-206
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    • 2006
  • The GFSK Transceiver of 400 MHz ISM band for data communication is designed and fabricated. To reduce the occupied bandwidth of transmitted signal, the GFSK modulation is selected. The measured results of fabricated transceiver show the data rate of 2,400 bps at 8.5 kHz bandwidth, frequency deviation of less than ${\pm}3\;kHz$, sensitivity of -107 dBm at SINAD of 20 dB, BER of less than $1.8{\times}10^{-3}$ at -110 dBm input power. The fabricated transceiver is satisfied with the regulation of radio wave and has the good performance.

Design of a Rceiver MMIC for the CDMA Terminal (CDMA 단말기용 수신단 MMIC 설계)

  • 권태운;최재하
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.12 no.1
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    • pp.65-70
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    • 2001
  • This paper presents a Receiver MMIC for the CDMA terminal. The complete circuit is composed of Low Noise Amplifier, Down Conversion Mixer, Intermediate Frequency Amplifier and Bias circuit. The Bias circuit implementation, which allows for compensation for threshold voltage and power supply voltage variation are provided. The proposed topology has high linearity and low noise characteristics. Results of the designed circuit are as follows: Overall conversion gain is 28.5 dB, input IP3 of LNA is 8 dBm, input IP3 of down conversion mixer is 0 dBm and total DC current consumption is 22.1 mA.

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Design and Fabrication of Triple Band Ultra-small VCO (SMD Type) (트리플 밴드 초소형 전압 제어 발진기 (SMD형) 설계 및 제작)

  • 조익현;김정삼;윤동한
    • Proceedings of the IEEK Conference
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    • 2003.07a
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    • pp.334-337
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    • 2003
  • GSM / DCS1800 / PCS 대역에서 사용 가능한 9.5mm x 6.5mm 크기의 트리플 밴드 초소형 전압제어 발진기를 설계하였다. 설계된 트리플 밴드 VCO는 GSM(880∼915MHz) 대역에서 7±3dBm의 출력전력, DCS1800 (1720∼1785MHz) 대역에서 8±3dBm의 출력전력, PCS(1720∼1780MHz) 대역에서 0±3dBm의 출력전력의 특성을 보인다. 위상 잡음의 특성은 -110dBc @100KHz 이하의 만족할만한 성능을 보인다.

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Design of a 24 GHz Power Amplifier Using 65-nm CMOS Technology (65-nm CMOS 공정을 이용한 24 GHz 전력증폭기 설계)

  • Seo, Dong-In;Kim, Jun-Seong;Cui, Chenglin;Kim, Byung-Sung
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.27 no.10
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    • pp.941-944
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    • 2016
  • This paper proposes 24 GHz power amplifier for automotive collision avoidance and surveillance short range radar using Samsung 65-nm CMOS process. The proposed circuit has a 2-stage differential power amplifier which includes common source structure and transformer for single to differential conversion, impedance matching, and power combining. The measurement results show 15.5 dB maximum voltage gain and 3.6 GHz 3 dB bandwidth. The measured maximum output power is 13.1 dBm, input $P1_{dB}$ is -4.72 dBm, output $P1_{dB}$ is 9.78 dBm, and maximum power efficiency is 17.7 %. The power amplifier consumes 74 mW DC power from 1.2 V supply voltage.

Analysis of Optimum Impedance for X-Band GaN HEMT using Load-Pull (로드-풀을 이용한 X-Band GaN HEMT의 최적 임피던스 분석)

  • Kim, Min-Soo;Rhee, Young-Chul
    • The Journal of the Korea institute of electronic communication sciences
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    • v.6 no.5
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    • pp.621-627
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    • 2011
  • In this paper, we analysed performance for on-wafer GaN HEMT using load-pull in X-band, and studied optimum impedance point based on analysis result. We suggested method of optimum performance device by analysis of optimum impedance for solid state device on-wafer condition before packaging. The measured device is gate length 0.25um, and gate width is 400um, 800um. device 400um is performed $P_{sat}$=33.16dBm, PAE=67.36%, Gain=15.16dBm, and device 800um is performed $P_{sat}$=35.91dBm, PAE=69.23%, Gain=14.87dBm.

A Study on the Design of Microwave Oscillator Output Matching Circuit Using 3-dB Coupler Tuner (3-dB Coupler Tuner를 이용한 초고주파 발진기의 출력 정합회로 설계에 관한 연구)

  • 이석기;오재석;이영순;김병철
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.9 no.2
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    • pp.171-178
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    • 1998
  • Generally, the output matching circuit has the most influence to the output power of oscillator and existing method for output matching has difficulty for making the optimum output matching circuit because the matching has to be done nearby the infinite impedance area of the Smith Chart. In this paper, it is studied for the output matching circuit of the microwave oscillator to get the maximum output power. The maximum output point can be found by adjusting the position of moving short in the Tuner while the oscillator is operating after connect the 3-dB coupler Tuner to the oscillator without output matching circuit. To design the oscillator for the maximum output power can be done easily with the microstrip line which is realized from the measured S-parameters of Tuner. In compare the oscillator by the existing method with another one by the suggested method in this paper, the first one has 6.45 dBm output power and second one has 9.71 dBm which is 3.26 dBm higher than the first one at the oscillation frequency 1.0338 GHz.

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A Performance Consideration on Conversion Loss in the Integrated Single Balanced Diode Mixer

  • Han, Sok-Kyun;Kim, Kab-Ki
    • Journal of information and communication convergence engineering
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    • v.1 no.3
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    • pp.139-142
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    • 2003
  • In this paper, we consider the factors that affect a conversion loss performance in designing a single balanced diode mixer integrated with IRF(Image Reject Filter), based on the embedded electrical wavelength placed between the IRF and mixer, diode matching and LO drive amplifier. To evaluate the conversion loss performance, we suggest two types of a single balanced mixer using 90 degree branch line coupler, microstrip line and schottky diode. One is only mixer and the other is integrated with IRF and LO drive amplifier. The measured results of a single balance diode mixer integrated IRF show the conversion loss of 8.5 dB and the flatness of 1 dB p-p from 21.2 GHz to 22.6 GHz with 10 dBm LO. The measured input PI dB and IIP3 are 7 dBm and 15 dBm respectively under the nominal LO power level of 10dBm. The LO/RF and LO/IF isolation are 22 dB and 50 dB, respectively.