• Korean Journal of Acupuncture
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• 제22권2호
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• pp.25-41
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• 2005

Objectives : Bambusae Caulis in Liquamen(BCL) has been used to medication for early stroke in the Oriental Medicine. So this study was planned to investigate the effects of BCL on the focal ischemia-induced by intraluminal filament insertion in the rats. Materials and methods: The focal ischemia was induced by Intraluminal Filament insertion into middle cerebral artery. BCL herbal acupuncture at ST36 was carried out during 3 weeks after focal ischemia-induced. Eight-arm radial maze was used for the behavioral task and neuroprotective effect of BCL acupuncture was observed by Cresyl violet, AchE, ChAT-stain Results : The error rate in the eight-arm radial maze task was significantly decreased in BCL1(0.89mg/kg) herbal acupuncture group compared to control group on 3,4,5days, compared to saline acupuncture group on 3,5days. The rate of correct choice was significantly increased in saline acupuncture, BCL1 herbal acupuncture group, BCL2(0.089mg/kg) herbal acupuncture groups compared to control group. The density of neurons in the hippocampal CA1 was the most increased in BCL1 herbal acupuncture group compared to the others. The density of AchE in the hippocampal CA1 was significantly increased in BCL1 herbal acupuncture, BCL2 herbal acupuncture groups compared to control group, and in BCL2 herbal acupuncture groups increased compared to saline acupuncture, control groups. The density of ChAT in the hippocampal CA1 was significantly increased in BCLl herbal acupuncture group compared to saline acupuncture, control groups. Conclusions : These results suggest that BCL herbal acupuncture could be used as a medication for controlling the early stroke.

• BMB Reports
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• 제35권5호
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• pp.452-458
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• 2002

Exposure to ultraviolet light (UV) induces apoptosis in mammalian cells, The caspase group of proteases is required for the appotosis. This pathway is initiated by a release of cytochrome c from the mitochondria into the cytosol. Several Bcl-2 family proteins can regulate the release of cytochrome c by stabilizing the mitochondrial membrane. Here we show that expression of the endogenous bcl-xL was strongly downregulated in NIH3T3 cells within 2 h after UV-C irradiation, and that of bax was upregulated from 8 h after irradiation. Apoptosis was induced in more than 50% of the NIH3T3 cells 48 h after irradiation. Constitutive overexpression of bcl-xL in NIH3T3 cells protected the UV-induced apoptosis by preventing the loss of mitochondrial membrane potential and the activation of caspase 9. There results suggest that downregulation of Bcl-xL is relevant to UV-induced apoptosis of tibroblasts.

• 한국전기전자재료학회논문지
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• 제23권10호
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• pp.747-751
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• 2010

In the study, the characteristics of the etched Zinc oxide (ZnO) thin films surface, the etch rate of ZnO thin film in $Cl_2/BCl_3/Ar$ plasma was investigated. The maximum ZnO etch rate of 53 nm/min was obtained for $Cl_2/BCl_3/Ar$=3:16:4 sccm gas mixture. According to the x-ray diffraction (XRD) and atomic force microscopy (AFM), the etched ZnO thin film was investigated to the chemical reaction of the ZnO surface in $Cl_2/BCl_3/Ar$ plasma. The field emission auger electron spectroscopy (FE-AES) analysis showed an elemental analysis from the etched surfaces. According to the etching time, the ZnO thin film of etched was obtained to The AES depth-profile analysis. We used to atomic force microscopy to determine the roughness of the surface. So, the root mean square of ZnO thin film was 17.02 in $Cl_2/BCl_3/Ar$ plasma. Based on these data, the ion-assisted chemical reaction was proposed as the main etch mechanism for the plasmas.

• The Korean Journal of Physiology and Pharmacology
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• 제18권1호
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• pp.73-78
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• 2014

Cell death and survival are tightly controlled through the highly coordinated activation/inhibition of diverse signal transduction pathways to insure normal development and physiology. Imbalance between cell death and survival often leads to autoimmune diseases and cancer. Death receptors sense extracellular signals to induce caspase-mediated apoptosis. Acting upstream of CED-3 family proteases, such as caspase-3, Bcl-2 prevents apoptosis. Using short hairpin RNAs (shRNAs), we suppressed Bcl-2 expression in Jurkat T cells, and this increased TCR-triggered AICD and enhanced TNFR gene expression. Also, knockdown of Bcl-2 in Jurkat T cells suppressed the gene expression of FLIP, TNF receptor-associated factors 3 (TRAF3) and TRAF4. Furthermore, suppressed Bcl-2 expression increased caspase-3 and diminished nuclear factor kappa B (NF-${\kappa}B$) translocation.

• 대한의생명과학회지
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• 제11권3호
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• pp.281-287
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• 2005

Although actinomycin D (AMD) is known to induce apoptotic cell death to various cell lines, the mechanism of apoptosis induced by AMD is still unclear. Understanding this mechanism may improve its therapeutic efficacy. The present study has been performed to elucidate expression of Bcl-2 and Caspase-3 proteins related to apoptosis in human leukemia K-562 cells. Five different assays were performed in this study; DNA fragmentation analysis by agarose gel electrophoresis, quantitative assay of fragmented DNA, morphological assessment of apoptotic cells, quantification of apoptosis by annexin V (AV) and propidium iodide (PI) staning, and expression of Bcl-2 and Caspase-3 proteins by the western blot analysis. The number of apoptotic cells and amount of fragmented DNA in this cell line treated with AMD was increased at 6 hour. DNA ladder pattern was also appeared at 6 hour. The expression of Bcl-2 was decreased, and disappeared from 12 hours after AMD treatment. Precursor of Caspase-3 was degraded, and 20 kDa cleavage products were detected. These results suggest that AMD induced apoptosis of K-562 cells is Caspase-3-dependent fashion, and this apoptosis is related to the degradation of Bcl-2 proteins.

• Molecules and Cells
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• 제21권1호
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• pp.1-6
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• 2006

Bcl-2/adenovirus E1B 19 kDa-interacting protein 3 (BNIP3) is a mitochondrial pro-apoptotic protein that has a single Bcl-2 homology 3 (BH3) domain and a COOH-terminal transmembrane (TM) domain. Although it belongs to the Bcl-2 family and can heterodimerize with Bcl-2, its pro-apoptotic activity is distinct from those of other members of the Bcl-2 family. For example, cell death mediated by BNIP3 is independent of caspases and shows several characteristics of necrosis. Furthermore, the TM domain, but not the BH3 domain, is required for dimerization, mitochondrial targeting and pro-apoptotic activity. BNIP3 plays an important role in hypoxia-induced death of normal and malignant cells. Its expression is markedly increased in the hypoxic regions of some solid tumors and appears to be regulated by hypoxia-inducible factor (HIF), which binds to a site on the BNIP3 promoter. Silencing, followed by methylation, of the BNIP3 gene occurs in a significant proportion of cancer cases, especially in pancreatic cancers. BNIP3 also has a role in the death of cardiac myocytes in ischemia. Further studies of BNIP3 should provide insight into hypoxic cell death and may contribute to improved treatment of cancers and cardiovascular diseases.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.480-480
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• 2011

양극산화(anodization)는 금속을 전기화학적으로 산화시켜 금속산화물로 만드는 기술로서 최근 다양한 크기의 나노 구조를 제조하는 기술로 각광받고 있으며, 이러한 기술에 의하여 얻어지는 anodic aluminum oxide(AAO)는 magnetic data storage, optoelectronic device, sensor에 적용될 수 있는 nano device 뿐만 아니라 nanostructure를 제조하기 위한 template 및 mask로써 최근 광범위 하게 연구되고 있다. 또한, AAO는 Al2O3의 단단한 구조를 가진 무기재료이므로 solid mask로써 다른 porous materials 보다 뛰어난 특성을 갖고 있다. 또한 electron-beam lithography 및 block co-polymer 에 의한 patterning 과 비교하여 매우 경제적이며, 재현성이 우수할 뿐만 아니라 대면적에서 나노 구조의 크기 및 형상제어가 비교적 쉽기 때문에 널리 사용되고 있다. 그러나, AAO 형성 시 생기게 되는 반구형 모양의 barrier layer는 물질(substance)과 기판과의 direct physical and electrical contact을 방해하기 때문에 해결해야 할 가장 큰 문제점 중 하나로 알려져 있다. 따라서 본 연구에서는 실리콘 기판위의 형성된 AAO의 barrier layer를 Cl/BCl3 gas mixture에서 Neutral Beam Etching (NBE)과 Ion Beam Etching (IBE) 로 각각 식각한 후 그 결과와 비교하였다. NBE와 IBE 모두 Cl2/BCl3 gas mixture에서 BCl3 gas의 첨가량이 60% 일 경우 etch rate이 가장 높게 나타났고, optical emission spectroscopy (OES)로 Cl2/BCl3 플라즈마 내의 Cl radical density와 X-ray photoelectron spectroscopy (XPS)로 AAO 표면 위를 관찰한 결과 휘발성 BOxCly의 형성이 AAO 식각에 크게 관여함을 확인 할 수 있었다. 또한, NBE와 IBE 실험한 다양한 Cl2/BCl3 gas mixture ratio 에서 AAO가 식각이 되지만, 이온빔의 경우 나노사이즈의 AAO pore의 charging에 의해 pore 아래쪽의 위치한 barrier layer를 어떤 식각조건에서도 제거하지 못하였다. 하지만, NBE에서는 BCl3-rich Cl2/BCl3 gas mixture인 식각조건에서 AAO pore에 휘발성 BOxCly를 형성하면서 barrier layer를 제거할 수 있었다.

• 한국미생물·생명공학회지
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• 제49권3호
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• pp.283-288
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• 2021

본 연구에서는 굴피나무 잎 추출물로부터 사람 위암세포주인 AGS 세포에 대한 apoptosis가 유도되어 항암 활성을 가지는지를 확인하고자 한다. AGS 세포에 굴피나무 잎 추출물을 농도별(0, 50, 150, 200 ㎍/ml)로 처리하여 세포에서 나타나는 양상들을 확인하였다. MTS 측정으로 암세포 생존율을 확인한 결과 굴피나무 잎 추출물에 따라 농도의존적으로 세포에 독성을 보였으며, 이러한 세포 죽음이 apoptosis 유도에 의한 것인지를 annexin V/FITC-PI 염색을 통해 확인하였다. 그 결과, early apoptosis를 보이는 세포의 양상이 유의성 있게 증가하였다. 굴피나무 잎 추출물의 처리는 세포 주기에서 sub-G1기의 증가로 암세포가 더 이상 분열하지 못하고 증식이 억제됨을 보여준다. 내인성 경로에 관여하는 Bax, Bak, Bcl-2, Bcl-xL의 증감을 mRNA 수준에서 RT-PCR로 확인한 결과, Bax, Bak가 증가하고, Bcl-2, Bcl-xL이 감소를 동반하며 미토콘드리아를 통한 세포사멸의 신호전달 경로가 진행되고 있음을 확인할 수 있었다. 이러한 결과를 종합하면 굴피나무 잎 추출물은 사람 위암세포에 대한 항암 활성을 가지는 효능적 가치가 있음에 가능성을 제시할 수 있을 것으로 생각되며, 추가적인 동물실험을 통한 인체적용시험의 효능 검증을 통해 의약품 개발 가능성을 확인해야 한다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.31-36
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• 2003

We investigated dry etching of GaAs and AlGaAs in a high density planar inductively coupled plasma system with $BCl_3$ and $BCl_3/Ar$ gas chemistry. A detailed process study as a function of ICP source power, RIE chuck power and $BCl_3/Ar$ mixing ratio was performed. At this time, chamber pressure was fixed at 7.5 mTorr. The ICP source power and RIE chuck power were varied from 0 to 500 W and from 0 to 150 W, respectively. GaAs etch rate increased with the increase of ICP source power and RE chuck power. It was also found that etch rate of GaAs in $BCl_3$ gas with 25% Ar addition was superior to that of GaAs in a pure $BCl_3$ (20 sccm $BCl_3$) plasma. The result was same with AlGaAs. We expect that high ion-assisted effect in $BCl_3$/Ar plasma increased etch rates of both materials. The GaAs and AIGaAs features etched at 20 sccm $BCl_3$ and $15BCl_3/5Ar$ with 300 W ICP source power, 100 W RIE chuck power and 7.5 mTorr showed very smooth surfaces(RMS roughness < 2 nm) and excellent sidewall. XPS study on the surfaces of processed GaAs also proved extremely clean surfaces of the materials after dry etching.

• 한국재료학회지
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• 제19권3호
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• pp.132-136
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• 2009

This study investigates GaAs dry etching in capacitively coupled $BCl_3/N_2$ plasma at a low vacuum pressure (>100 mTorr). The applied etch process parameters were a RIE chuck power ranging from $100{\sim}200W$ on the electrodes and a $N_2$ composition ranging from $0{\sim}100%$ in $BCl_3/N_2$ plasma mixtures. After the etch process, the etch rates, RMS roughness and etch selectivity of the GaAs over a photoresist was investigated. Surface profilometry and field emission-scanning electron microscopy were used to analyze the etch characteristics of the GaAs substrate. It was found that the highest etch rate of GaAs was $0.4{\mu}m/min$ at a 20 % $N_2$ composition in $BCl_3/N_2$ (i.e., 16 sccm $BCl_3/4$ sccm $N_2$). It was also noted that the etch rate of GaAs was $0.22{\mu}m/min$ at 20 sccm $BCl_3$ (100 % $BCl_3$). Therefore, there was a clear catalytic effect of $N_2$ during the $BCl_3/N_2$ plasma etching process. The RMS roughness of GaAs after etching was very low (${\sim}3nm$) when the percentage of $N_2$ was 20 %. However, the surface roughness became rougher with higher percentages of $N_2$.