• Title/Summary/Keyword: BCB planarization

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Formation of Indium Bumps on Micro-pillar Structures through BCB Planarization (BCB 평탄화를 활용한 마이크로 기둥 구조물 위의 인듐 범프 형성 공정)

  • Park, Min-Su
    • Journal of the Microelectronics and Packaging Society
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    • v.28 no.4
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    • pp.57-61
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    • 2021
  • A formation process of indium bump arrays on micro-pillar structures is proposed. The space to form indium bump on the narrow structures can be secured applying the benzocyclobutene (BCB) planarization and its etch-back process. We exhibit a detailed overview of the process steps involved in the fabrication of 320×256 hybrid camera sensor for short-wavelength infrared (SWIR) detection. The shear strength of the BCB, which has undergone the different processes, is extracted by quartz crystal microbalance measurement. The shear strength of the BCB is three orders of magnitude higher than that of the indium bump itself. The measured dark current distribution of the fabricated SWIR camera sensor indicates the suggested process of indium bumps can be useful for embodying highly sensitive infared camera sensors.

Stability of Amorphous Silicon Thin-Film Transistor using Planarized Gate

  • Choi, Young-Jin;Woo, In-Keun;Lim, Byung-Cheon;Jang, Jin
    • 한국정보디스플레이학회:학술대회논문집
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    • 2000.01a
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    • pp.15-16
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    • 2000
  • The gate bias stress effect of the hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) with a $SiN_x/BCB$ gate insulator have been studied. The gate planarization was carried out by spin-coating of BCB (benzocyclobutene) on Cr gates. The BCB exhibits charge trappings during a high gate bias, but the stability of the TFT is the same as conventional one when it is between -25 V and +25 V. The charge trap density in the BCB increases with its thickness.

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High $f_T$ 30nm Triple-Gate $In_{0.7}GaAs$ HEMTs with Damage-Free $SiO_2/SiN_x$ Sidewall Process and BCB Planarization

  • Kim, Dae-Hyun;Yeon, Seong-Jin;Song, Saegn-Sub;Lee, Jae-Hak;Seo, Kwang-Seok
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.4 no.2
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    • pp.117-123
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    • 2004
  • A 30 nm $In_{0.7}GaAs$ High Electron Mobility Transistor (HEMT) with triple-gate has been successfully fabricated using the $SiO_2/SiN_x$ sidewall process and BCB planarization. The sidewall gate process was used to obtain finer lines, and the width of the initial line could be lessened to half by this process. To fill the Schottky metal effectively to a narrow gate line after applying the developed sidewall process, the sputtered tungsten (W) metal was utilized instead of conventional e-beam evaporated metal. To reduce the parasitic capacitance through dielectric layers and the gate metal resistance ($R_g$), the etchedback BCB with a low dielectric constant was used as the supporting layer of a wide gate head, which also offered extremely low Rg of 1.7 Ohm for a total gate width ($W_g$) of 2x100m. The fabricated 30nm $In_{0.7}GaAs$ HEMTs showed $V_{th}$of -0.4V, $G_{m,max}$ of 1.7S/mm, and $f_T$ of 421GHz. These results indicate that InGaAs nano-HEMT with excellent device performance could be successfully fabricated through a reproducible and damage-free sidewall process without the aid of state-of-the-art lithography equipment. We also believe that the developed process will be directly applicable to the fabrication of deep sub-50nm InGaAs HEMTs if the initial line length can be reduced to below 50nm order.

Aqueous-Base-Developable Benzocyclobutene (BCB)-Based Material for Display Applications

  • So, Ying-Hung;Stark, Edmund;Li, Yongfu;Achen, Albert;Scheck, Dan;Kisting, Scott;Baranek, Kayla;Wood, Charilie
    • 한국정보디스플레이학회:학술대회논문집
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    • 2006.08a
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    • pp.1510-1515
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    • 2006
  • A self-priming and photosensitive aqueous-basedevelopable benzocyclobutene (BCB)-based dielectric material curable in air is described. Patterned films have high resolution. Whether cured in nitrogen or in air, the formulation produces a film with optical, electrical, thermal, and mechanical properties desired for many microelectronic applications, such as a planarization layer or insulation layer in display applications. A self-priming, air-curable nonphoto- sensitive BCB material is also described.

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High Sensitivity Micro-fabricated Fluxgate Sensor with a Racetrack Shaped Magnetic Core

  • Choi, Won-Youl;Kim, So-Jung
    • Transactions on Electrical and Electronic Materials
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    • v.6 no.3
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    • pp.110-114
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    • 2005
  • We present a micro fluxgate magnetic sensor having solenoid coils and racetrack shaped magnetic core, which was designed to decrease the .operating power and magnetic flux leakage. Electroplated copper coils of $6\;{\mu}m$ thickness and the core of $3\;{\mu}m$ thickness were separated by benzocyclobutane (BCB) having a high insulation and good planarization characters. Permalloy $(Ni_{0.8}Fe_{0.2})$ as a magnetic core was also electroplated under 2000 gauss to induce the magnetic anisotropy. The core had the high DC effective permeability of $\~1,300$ and coercive field of $\~0.1$ Oe. The fabricated fluxgate sensor had the very small actual size of $3.0\times1.7\;mm^2$. The fluxgate sensor with a racetrack shaped core had the high sensitivity .of $\~350$ V/T at excitation condition of 3 $V_{P-P}$ and 2 MHz square wave. When two fluxgates were perpendicularly aligned in terrestrial field, their two-axis output signals were very useful to commercialize an electronic azimuth compass for the portable navigation system.

The Performance of Micro Fluxgate Sensor with Magnetic Core Shape (자성체 코어 형상에 따른 마이크로 플럭스게이트 센서의 검출 특성)

  • 조중희;최원열
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.17 no.5
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    • pp.508-514
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    • 2004
  • A fluxgate magnetic sensor consists of a solenoid excitation coil, pick-up coil, and magnetic core. We presents the effect of magnetic core shape in a micromachined fluxgate sensor. To observe the performance of fluxgate sensor with magnetic core side width and gap, side width of 125 ${\mu}{\textrm}{m}$, 250 ${\mu}{\textrm}{m}$, and 500 ${\mu}{\textrm}{m}$ were designed in a rectangular-ring shaped core and the gaps of 0 ${\mu}{\textrm}{m}$, 50 ${\mu}{\textrm}{m}$, and 100 ${\mu}{\textrm}{m}$ were also fabricated in a racetrack shaped core. The solenoid coils and magnetic core were separated by benzocyclobutane(BCB) which had high insulation and good planarization characters. Copper coil patterns of 10 ${\mu}{\textrm}{m}$ width and 6${\mu}{\textrm}{m}$ thickness were electroplated on Ti(300 $\AA$) / Cu(1500 $\AA$) seed layers. 3 ${\mu}{\textrm}{m}$ thick N $i_{0.8}$F $e_{0.2.}$(permalloy) film for the magnetic core was also electroplated under 2000 gauss to induce the magnetic anisotropy. The magnetic core had the high DC effective permeability of ∼1,300 and coercive field of ∼0.1 Oe. Because the magnetic cores of 500 ${\mu}{\textrm}{m}$ side width and 0 gap had a low magnetic flux leakage, high sensitivity of ∼350 V/T were measured at excitation condition of 3 $V_{P-P}$ and 2 MHz square wave. The power consumption of ∼14 ㎽ was measured. The fabricated fluxgate sensor had the very small actual size of 3.0${\times}$1.7 $\textrm{mm}^2$. When two fluxgates were perpendicularly aligned in terrestrial field, their two-axis output signals were very useful to commercialize an electronic azimuth compass for the portable navigation system.m.m.m.