• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.06a
• /
• pp.533-533
• /
• 2007

The stress effect of SiGe p-type metal oxide semiconductors field effect transistors(MOSFETs) has been investigated to compare device properties using Si bulk and partially depleted silicon on insulator(PD SOI). The electrical properties in SiGe PD SOI presented enhancements in subthreshold slope and drain induced barrier lowering in comparison to SiGe bulk. The reliability of gate oxides on bulk Si and PD SOI has been evaluated using constant voltage stressing to investigate their breakdown (~ 8.5 V) characteristics. Gate leakage was monitored as a function of voltage stressing time to understand the breakdown phenomena for both structures. Stress induced leakage currents are obtained from I-V measurements at specified stress intervals. The 1/f noise was observed to follow the typical $1/f^{\gamma}$ (${\gamma}\;=\;1$) in SiGe bulk devices, but the abnormal behavior ${\gamma}\;=\;2$ in SiGe PD SOI. The difference of noise frequency exponent is mainly attributed to traps at silicon oxide interfaces. We will discuss stress induced instability in conjunction with the 1/f noise characteristics in detail.

• Korean Journal of Materials Research
• /
• v.16 no.10
• /
• pp.629-632
• /
• 2006

Electrical characteristics of Pt/Ti/Pt/Au and Pd/Zn/Pd/Au contacts to p-type InGaAs grown on an InP substrate have been characterized as a function of the doping concentration and the annealing temperature. The Pt/Ti/Pt/Au contacts produced the specific contact resistance as low as $2.3{\times}10^{-6}{\Omega}{\cdot}cm^2$, when heat-treated at an annealing temperature of $400^{\circ}C$. Comparison of the Pt/Ti/Pt/Au and Ti/Pt/Au contacts showed that the first Pt layer plays an important role in reducing the contact resistivity probably by lowering energy barrier at the metal-semiconductor interface. For the Pd/Zn/Pd/Au contacts, the contact resistivity remained virtually unchanged with increasing annealing temperature. The specific contact resistivity as low as $4.7{\times}10^{-6}{\Omega}{\cdot}cm^2$ was obtained. The results indicate that the Pt/Ti/Pt/Au and Pd/Zn/Pd/Au schemes could be potentially important for the fabrication of InP-based optoelectronic devices, such as photodetector and optical modulator.

• Journal of Convergence for Information Technology
• /
• v.11 no.7
• /
• pp.104-110
• /
• 2021

A novel selective oxidation process has been developed for low source/drain (S/D) series resistance of the fin channel metal oxide semiconductor field effect transistor (MOSFET). Using this technique, the selective oxidation fin-channel MOSFET (SoxFET) has the gate-all-around structure and gradually enhanced S/D extension regions. The SoxFET demonstrated over 70% reduction in S/D series resistance compared to the control device. Moreover, it was found that the SoxFET behaved better in performance, not only a higher drive current but also higher transconductances with suppressing subthreshold swing and drain induced barrier lowering (DIBL) characteristics, than the control device. The saturation current, threshold voltage, peak linear transconductance, peak saturation transconductance, subthreshold swing, and DIBL for the fabricated SoxFET are 305 ㎂/㎛, 0.33 V, 13.5 𝜇S, 76.4 𝜇S, 78 mV/dec, and 62 mV/V, respectively.

• Journal of Environmental Impact Assessment
• /
• v.23 no.6
• /
• pp.492-504
• /
• 2014

Feral pigeon (Columba livia) has been known as a good indicator for accumulations of chemical pollutants in urban areas. However, it is against the animal rights to kill the indicator species in order to monitor pollutants accumulations in wild birds. Eggs and feathers of birds, therefore, have been used as non-invasive monitoring materials. Even though eggs are a good indicator for accumulations of lipophilic pollutants, but unsuitable for some heavy metals such as lead and cadmium because bird's ovary builds a sort of barrier to inhibit higher accumulations of some heavy metals in the eggs. Therefore, feathers instead of eggs have been used as a non-invasive indicator for accumulations of heavy metals. However, there are few studies of heavy metal accumulations of feral pigeon in Korea. In this study, we characterized the characteristics of heavy metal accumulations of feathers in relation to internal organs (bloods, viscera and bones) in feral pigeons between two sites (Hangang Park representing urban area and Hampyeong Park for rural area). The samples from the Hangang Park showed significantly higher lead (Pb) concentrations in the blood, liver and bone than those from Hampyeong Park. The Pb concentration in the feathers was also significantly higher at Hangang Park than at Hampyeong Park. The analytical result for the breast, wing and tail feathers, and the internal organs (blood, lung, liver, kidney and bone) indicated that the Pb concentrations in the feathers were significantly positively correlated with the levels in the kidney and bone. Overall, feathers of feral pigeon may be candidate for bioindicator to monitor for Pb accumulations in urban areas.

• Economic and Environmental Geology
• /
• v.56 no.4
• /
• pp.421-433
• /
• 2023

The final disposal of spent nuclear fuel(SNF) from nuclear power plants takes place in a deep geological repository. The metal canister encasing the SNF is made of cast iron and copper, and is engineered to effectively isolate radioactive isotopes for a long period of time. The SNF is further shielded by a multi-barrier disposal system comprising both engineering and natural barriers. The deep disposal environment gradually changes to an anaerobic reducing environment. In this environment, sulfide is one of the most probable substances to induce corrosion of copper canister. Stress-corrosion cracking(SCC) triggered by sulfide can carry substantial implications for the integrity of the copper canister, potentially posing a significant threat to the long-term safety of the deep disposal repository. Sulfate can exist in various forms within the deep disposal environment or be introduced from the geosphere. Sulfate has the potential to be transformed into sulfide by sulfate-reducing bacteria(SRB), and this converted sulfide can contribute to the corrosion of the copper canister. Bentonite, which is considered as a potential material for buffering and backfilling, contains oxidized sulfate minerals such as gypsum(CaSO4). If there is sufficient space for microorganisms to thrive in the deep disposal environment and if electron donors such as organic carbon are adequately supplied, sulfate can be converted to sulfide through microbial activity. However, the majority of the sulfides generated in the deep disposal system or introduced from the geosphere will be intercepted by the buffer, with only a small amount reaching the metal canister. Pyrite, one of the potential sulfide minerals present in the deep disposal environment, can generate sulfates during the dissolution process, thereby contributing to the corrosion of the copper canister. However, the quantity of oxidation byproducts from pyrite is anticipated to be minimal due to its extremely low solubility. Moreover, the migration of these oxidized byproducts to the metal canister will be restricted by the low hydraulic conductivity of saturated bentonite. We have comprehensively analyzed and summarized key research cases related to the presence of sulfates, reduction processes, and the formation and behavior characteristics of sulfides and pyrite in the deep disposal environment. Our objective was to gain an understanding of the impact of sulfates and sulfides on the long-term safety of high-level radioactive waste disposal repository.

• Journal of Soil and Groundwater Environment
• /
• v.7 no.2
• /
• pp.63-71
• /
• 2002

The authors selected the modified soil method, and then performed the geotechnical and environmental laboratory test, and evaluated whether the modified soil liner could be accepted as a barrier layer in landfill. Unlike the results of the natural soil(CL), those of the hydraulic conductivity test of stabilized soil met the standard value. According to these results, the optimal mixing ratio of a mixture(cement : bentonite : stabilizing agent) was 90 : 60 : 1 with mass ratio(kg) for 1㎥ with soil, and it was possible to use poor quality bentonite. B\circled2 because of a little difference from results with high quality bentonite. B\circled1. The Cation Exchange Capacity(CEC) of the modified soil was increased about 1.5 times compared with the natural soil; however. the change of CEC with a sort of additives was not detected. In order to observe the change of the chemical components and crystal structures, the natural and the modified soils with the sorts of additives were measured by the XRF(X-Ray Flourescence Spectrometer) and SEM, but there was no significant change. The artificial leachate with the heavy meals ($Pb^{2+}$ , $Cu^{2+}$, $Cd^{2+}$ Zn$^{2+}$ 100mg/L) was passed through the natural soil and modified soils in columns. In the natural soil, Cd$^{2+}$ and $Zn^{2+}$ were identified, simultaneously the pH of outflow was lower, and then came to the breakthrough point. The removal efficiency of the natural soil was showed in order of following : $Pb^{2+}$ ≒$Cu^{2+}$ > $Zn^{2+}$ > $Cd^{2+}$ On the other hand, modified soils were not showed the breakthrough condition like the result of the natural soil. The modified soil with the lower quality bentonite, B\circled2(column3) was more stable with respect to chemical attack than that with the higher bentonite, B\circled1(column2) because the change range of outflow pH in columns was less than that of outflow pH in column2. In addition, the case of adding the stabilizing agent(column4) was markedly showed the phenomena.ena.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.1 no.4
• /
• pp.202-208
• /
• 2001

In Recent results suggested that doping $Ta_2O_5$ with a small amount of $TiO_2$ using standard ceramic processing techniques can increase the dielectric constant of $Ta_2O_5$ significantly. In this paper, this concept is studied using RTCVD (Rapid Thermal Chemical Vapor Deposition). Ti-doped $Ta_2O_5$ films are deposited using $TaC_{12}H_{30}O_5N$, $C_8H_{24}N_4Ti$, and $O_2$ on both Si and $NH_3$-nitrided Si substrates. An $NH_3$-based interface layer at the Si surface is used to prevent interfacial oxidation during the CVD process and post deposition annealing is performed in $H_2/O_2$ ambient to improve film quality and reduce leakage current. A sputtered TiN layer is used as a diffusion barrier between the Al gate electrode and the $TaTi_xO_y$ dielectric. XPS analyses confirm the formation of a ($Ta_2O_5)_{1-x}(TiO_2)_x$ composite oxide. A high quality $TaTi_xO_y$ gate stack with EOT (Equivalent Oxide Thickness) of $7{\AA}$ and leakage current $Jg=O.5A/textrm{cm}^2$ @ Vg=-1.0V has been achieved. We have also succeeded in forming a $TaTi_x/O_y$ composite oxide by rapid thermal oxidation of the as-deposited CVD TaTi films. The electrical properties and Jg-EOT characteristics of these composite oxides are remarkably similar to that of RTCVD $Ta_2O_5, suggesting that the dielectric constant of $Ta_2O_5$ is not affected by the addition of $TiO_2$.

• KIEE International Transactions on Electrophysics and Applications
• /
• v.12C no.4
• /
• pp.208-213
• /
• 2002

The present study describe the electrical performance of amorphous T $a_2$ $O_{5-X}$ fabricated on the buffer layers Ti and Ti $O_2$. T $a_2$ $O_{5-X}$ thin films were grown on the Ti and Ti $O_2$ layers as a capacitor layer using reactive sputtering method. The X-ray pattern analysis indicated that the two as-deposited films were amorphous and the amorphous state was kept stable on the RTA(rapid thermal annealing) at even $700^{\circ}C$. Measurements of dielectric properties of the reactive sputtered T $a_2$ $O_{5-X}$ thin films fabricated in two simple MIS(metal insulator semiconductor), structures, (Cu/T $a_2$ $O_{5}$ Ti/Si and CuT $a_2$ $O_{5}$ Ti $O_2$Si) show that the amorphous T $a_2$ $O_{5}$ grown on Ti showed high dielectric constant (23～39) and high leakage current density(10$^{-3}$ ～10$^{-4}$ (A/$\textrm{cm}^2$)), whereas relatively low dielectric constant (～15) and tow leakage current density(10$^{-9}$ ～10$^{-10}$ (A/$\textrm{cm}^2$)) were observed in the amorphous T $a_2$ $O_{5}$ deposited on the Ti $O_2$ layer. The electrical behaviors of the T $a_2$ $O^{5}$ thin films were attributed to the contribution of Ti- $O_2$ and the compositionally gradient Ta-Ti-0, being the low dielectric layer and high leakage current barrier. In additional, The T $a_2$ $O_{5}$ Ti $O_2$ thin films exhibited dominant conduction mechanism contributed by the Poole-Frenkel emission at high electric field. In the case of T $a_2$ $O_{5}$ Ti $O_2$ thin films were related to the diffusion of Ta, Ti and O, followed by the creation of vacancies, in the rapid thermal treated thin films.films.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.10 no.9
• /
• pp.1663-1670
• /
• 2006

Single crystal Fe thin films were grown directly onto n-Si(111) substrates by pulsed electrodeposition. Cyclic Voltammogram(CV) indicated that the $Fe^{2+}/n-Si(111)$ interface shows a good diode behavior by forming a Schottky barrier. From Mott-Schottky (MS) relation, it is found that the flat-band potential of n-Si(111) substrate and equilibrium redox potential of $Fet^{2+}$ ions are -0.526V and -0.316V, respectively. The nucleation and growth kinetics at the initial reaction stages of Fe/n-Si(111) substraste was studied by current transients. Current transients measurements have indicated that the deposition process starts via instantaneous nucleation and 3D diffusion limited growth. After the more deposition, the deposition flux of Fe ions was saturated with increase of deposition time. from the as-deposited sample obtained using the potential pulse of 1.4V and 300Hz, it is found that Fe nuclei grows to three dimensional(3D) islands with the average size of about 100nm in early deposition stages. As the deposition time increases, the sizes of Fe nuclei increases progressively and by a coalescence of the nuclei, a continuous Fe films grow on the Si surface. In this case, the Fe films show a highly oriented columnar structure and x-ray diffraction patterns reveal that the phase ${\alpha}-Fe$ grows on the n-Si(111) substrates.

• The Sea:JOURNAL OF THE KOREAN SOCIETY OF OCEANOGRAPHY
• /
• v.2 no.2
• /
• pp.69-77
• /
• 1997

A 12-cm long sediment core was collected from a station in Lake Shihwa where high salinity-anoxic deep water is isolated from low salinity-oxic surface water by a strong halocline barrier. Unprecedented concentrations of porewater ammonia and lead are encountered: at 9 cm sediment depth ammonia builds up to 1420 ${\mu}M$ and at 3 cm lead to 1348 nM. As they are stable in anoxic condition, high concentrations of ammonia and lead suggest a development of notorious anoxic condition in the benthic environment of the lake. The degree of pollution of the deep water is likely to be directly proportional to the magnitude of benthic flux, because the deep water is isolated from the surface water by the halocline. Apparent coincidence of the ammonia residence time in the deep water with the elapsing time after the completion of the artificial lake construction, as about three years, suggests that the deep water pollution is being progressed entirely by benthic flux at least with respect to ammonia. The residence time for lead is such a short 20 days that it suggests a rapid return of the bottom water lead, which is originated from porewater by benthic flux, back to sediments probably as metal sulfide phases. The speculation on the return of lead as sulfide phases is likely to be supported by high concentration of hydrogen sulfide in the deep water and by high sinking rate of non-organic particles in Lake Shihwa.