• JSTS:Journal of Semiconductor Technology and Science
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• v.6 no.1
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• pp.22-29
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• 2006

We demonstrate highly manufacturable Multi-channel Field Effect Transistor (McFET) on bulk Si wafer. McFET shows excellent transistor characteristics, such as $5{\sim}6 times higher drive current than planar MOSFET, ideal subthreshold swing, low drain induced barrier lowering (DIBL) without pocket implantation and negligible body bias dependency, maintaining the same source/drain resistance as that of a planar transistor due to the unique feature of McFET. And suitable threshold voltage ($V_T$) for SRAM operation and high static noise margin (SNM) are achieved by using TiN metal gate electrode.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.167-167
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• 2011

Magnetic random access memory (MRAM) is one of the prospective semiconductor memories for next generation. It has the excellent features including nonvolatility, fast access time, unlimited read/write endurance, low operating voltage, and high storage density. MRAM consists of magnetic tunnel junction (MTJ) stack and complementary metal-oxide semiconductor (CMOS). The MTJ stack is composed of various magnetic materials, metals, and a tunneling barrier layer. For the successful realization of high density MRAM, the etching process of magnetic materials should be developed. Among various magnetic materials, FePt has been used for pinned layer of MTJ stack. The previous etch study of FePt magnetic thin films was carried out using $CH_4/O_2/NH_3$. It reported only the etch characteristics with respect to the variation of RF bias powers. In this study, the etch characteristics of FePt thin films have been investigated using an inductively coupled plasma reactive ion etcher in various etch chemistries containing $CH_4$/Ar and $CH_4/O_2/Ar$ gas mixes. TiN thin film was employed as a hard mask. FePt thin films are etched by varying the gas concentration. The etch characteristics have been investigated in terms of etch rate, etch selectivity and etch profile. Furthermore, x-ray photoelectron spectroscopy is applied to elucidate the etch mechanism of FePt thin films in $CH_4$/Ar and $CH_4/O_2/Ar$ chemistries.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.158-158
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• 2012

A new kind of organic-inorganic hybrid polymer, poly(tetraphenyl)silole siloxane (PSS), was invented and synthesized for realization of its unique charge trap properties. The organic portions consisting of (tetraphenyl)silole rings are responsible for electron trapping owing to their low-lying LUMO, while the Si-O-Si inorganic linkages of high HOMO-LUMO gap provide the intrachain energy barrier for controlling electron transport. Such an alternation of the organic and inorganic moieties in a polymer may give an interesting quantum well electronic structure in a molecule. The PSS thin film was fabricated by spin-coating of the PSS solution in THF organic solvent onto Si-wafer substrates and curing. The electron trapping of the PSS thin films was confirmed by the capacitance-voltage (C-V) measurements performed within the metal-insulator-semiconductor (MIS) device structure. And the quantum well electronic structure of the PSS thin film, which was thought to be the origin of the electron trapping, was investigated by a combination of theoretical and experimental methods: density functional theory (DFT) calculations in Gaussian03 package and spectroscopic techniques such as near edge X-ray absorption fine structure spectroscopy (NEXAFS) and photoemission spectroscopy (PES). The electron trapping properties of the PSS thin film of quantum well structure are closely related to intra- and inter-polymer chain electron transports. Among them, the intra-chain electron transport was theoretically studied using the Atomistix Toolkit (ATK) software based on the non-equilibrium Green's function (NEGF) method in conjunction with the DFT.

• YAKHAK HOEJI
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• v.40 no.1
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• pp.102-111
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• 1996

LB10522 is a new parenteral broad spectrum cephalosporin with a catechol moiety at C-7 position of beta-lactam ring. This compound can utilize tonB-dependent iron transp ort system in addition to porin proteins to enter bacterial periplasmic space and access to penicillin-binding proteins (PBPs) which are the lethal targets of ${\beta}$-lactam antibiotics. The chelating activity of LB10522 to metal iron was measured by spectrophotometrically scanning the absorbance from 200 to 900nm. When $FeCl_3$ was added, optical density was increased between 450 and 800nm. LB10522 was more active against gram-negative strains in iron-depleted media than in iron-replete media. This is due to the increased expression of iron transport channels in iron-depleted condition. LB10522 showed a similar activity against E. coli DC2 (permeability mutant) and E. coli DCO (wild type strain) in both iron-depleted and iron-replete media, indicating a minimal permeaility barrier for LB10522 uptake. LB10522 had high affinities to PBP 3 and PBP 1A, 1B of E. coli. By blocking these proteins, LB10522 caused inhibition of cell division and the eventual death of cells. This result was correlated well with the morphological changes in E. coli exposed to LB10522. Although the in vitro MIC of LB10522 against P. aeruginosa 1912E mutant (tonB) was 8-times higher than that of the P. aeruginosa 1912E parent strain, LB10522 showed a similar in vivo protection efficacy against both strains in the mouse systemic infection model. This result suggested that tonB mutant, which requires a high level of iron for normal growth, might have a difficulty in surviving in their host with an iron-limited environment.

• Corrosion Science and Technology
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• v.11 no.6
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• pp.280-285
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• 2012

Aluminum is on active metal, but it is well known that its oxide film plays a role as protective barrier which is comparatively stable in air and neutral aqueous solution. Thus, aluminum alloys have been widely applied in architectural trim, cold & hot-water storage vessels and piping etc., furthermore, the aluminum alloy of AC8A have been widely used in mold casting material of engine piston because of its properties of temperature and wear resistance. In recent years, the oil price is getting higher and higher, thus the using of low quality oil has been significantly increased in engines of ship and vehicle. Therefore it is considered that evaluation of corrosion resistance as well as wear resistance of AC8A material is also important to improve its property and prolong its lifetime. In this study, the effect of solution and tempering heat treatment to corrosion and wear resistance is investigated with electrochemical method and measurement of hardness. The hardness decreased with solution heat treatment compared to mold casting condition, but its value increased with tempering heat treatment and exhibited the highest value of hardness with tempering heat treatment temperature at $190^{\circ}C$ for 24hrs. Furthermore, corrosion resistance increased with decreasing of the hardness, and decreased with increasing of the hardness reversely. As a result, it is suggested that the optimum heat treatment to improve both corrosion and wear resistance is tempering heat treatment temperature at $190^{\circ}C$ for 16hrs.

• Journal of the Semiconductor & Display Technology
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• v.13 no.3
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• pp.45-50
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• 2014

In this paper, we propose a super-junction MOSFET (SJ MOSFET) fabricated through a simple pillar forming process by varying the Si epilayer thickness and doping concentration of pillars using SILVACO TCAD simulation. The design of the SJ MOSFET structure is presented, and the doping concentration of pillar, breakdown voltage ($V_{BR}$) and drain current are analyzed. The device performance of conventional Si planar metal-oxide semiconductor field-effect transistor(MOSFET), Si SJ MOSFET, and SiGe SJ MOSFET was investigated. The p- and n-pillars in Si SJ MOSFET suppressed the punch-through effect caused by drain bias. This lead to the higher $V_{BR}$ and reduced on resistance of Si SJ MOSFET. An increase in the thickness of Si epilayer and decrease in the former is most effective than the latter. The implementation of SiGe epilayer to SJ MOSFET resulted in the improvement of $V_{BR}$ as well as drain current in saturation region, when compared to Si SJ MOSFET. Such a superior device performance of SiGe SJ MOSFET could be associated with smaller bandgap of SiGe which facilitated the drift of carriers through lower built-in potential barrier.

• Journal of Korean Society of Water and Wastewater
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• v.21 no.1
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• pp.139-147
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• 2007

For environmental remediation of a contaminated groundwater plume, the use of zero-valent metal represents one of the latest innovative technologies. In this study, the effects of denitrification by zero-valent iron adsorbed in mesoporous silicas have been studied for groundwater contaminant degradation. The mesoporous silica was functionalized with 3-mercaptopropyltrimethoxysilane (MPTS) ligands and the zero-valent iron precipitated in the mesopore of granular silica was made by $FeCl_2$ and $NaBH_4$. Hydrogen was exchanged with $Fe^{2+}$ ions in the granular silicas. And then the ions were reduced by sodium borohydride in the mesoporous silicas. The surface area of the silica determined via the BET method ranged from 858 to $1275m^2/g$. The reductive reaction of nitrate-nitrogen indicated that the degradation of nitrate-nitrogen appeared to be pseudo first-order with the observed reaction rate constant kobs ($0.1619h^{-1}$) and to be directly proportional to the specific surface area. Therefore, the mesoporous silica with nano zero-valent iron proposed as a novel treatment strategy for contaminated groundwater was successfully implemented herein for the removal of nitrate-nitrogen.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.5
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• pp.386-389
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• 2009

The electrical characteristics and annealing effects of tunneling dielectrics stacked with $SiO_2$ and $Si_{3}N_{4}$ were investigated. I-V characteristics of band gap engineered tunneling gate stacks consisted of $Si_{3}N_{4}/SiO_2/Si_{3}N_{4}$ (NON), $SiO_2/Si_{3}N_{4}/SiO_2$ (ONO) dielectrics were evaluated and compared with $SiO_2$ single layer using the MOS (metal-oxide-semiconductor) capacitor structure. The leakage currents of engineered tunneling barriers (ONO, NON stacks) are lower than that of the conventional $SiO_2$ single layer at low electrical field. Meanwhile, the engineered tunneling barriers have larger tunneling current at high electrical field. Furthermore, the increased tunneling current through engineered tunneling barriers related to high speed operation can be achieved by annealing processes.

• Electrical & Electronic Materials
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• v.9 no.10
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• pp.991-1000
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• 1996

PbTiO$_{3}$-PbZrO$_{3}$-Pb(Ni$_{1}$3/Nb$_{2}$3/O$_{3}$) (PZT-PNN) thin films were prepared from corresponding metal organics partially stabilized with diethanolamine by the sol-gel spin coating method. Each mol ratio of PT:PZ:PNN solutions were #1(50:40:10), #2(50:30:20), #3(45:35:20), #4(40:40:20), #5(40:50:10), #6(35:45:20) and #7(30:50:20) respectively. The spin-coated PZT-PNN films were heat-treated at 350.deg. C for decomposition of residual organics, and were sintered from 450.deg. C to 750.deg. C for crystallization. The substrates, such as Pt and Pt/TiN/Ti/TiN/Si were used for the spin coating of PZT PNN films. The perovskite phase was observed in the PZT-PNN films heat-treated at 500.deg. C. The crystalline of the PZT-PNN films was optimized at the sintering of 700.deg. C. By the result of AES analysis, It is confirmed that the films of TiN/Ti/TiN was a good diffusion barrier and that co-diffusion into the each films was not observed.

• Elastomers and Composites
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• v.44 no.1
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• pp.22-33
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• 2009

Recently, elastomer-nanocomposites reinforced with low volume fraction of nanofillers have attracted great interest due to their fascinating properties. The incorporation of nanofillers, such as, layered silicate clays, carbon nanotubes, nanofibers, calcium carbonate, metal oxides or silica nanoparticles into elastomers improves significantly their mechanical, thermal, dynamic mechanical, barrier properties, flame retardancy, etc. The properties of nanocomposites depend greatly on the chemistry of polymer matrices, nature of nanofillers, and the method in which they are prepared. The uniform dispersion of nanofillers in elastomer matrices is a general prerequisite for achieving desired mechanical and physical characteristics. In this paper, current developments in the field of elastomer nanocomposites reinforced with layered silicates, silica, carbon nanotubes, nanofibers and various other nanoparticles have been addressed.