• 한국전기전자재료학회논문지
• /
• 제37권1호
• /
• pp.88-93
• /
• 2024

To evaluate the possibility as a multi-level memory medium for the Ge₂Sb₂Te₅/TiN/W-doped Ge₂Sb₂Te₅ cell structure, the crystallization rate and stabilization characteristics according to voltage (V)- and current (I)- pulse sweeping were investigated. In the cell structures prepared by a magnetron sputtering system on a p-type Si (100) substrate, the Ge₂Sb₂Te₅ and W-doped Ge₂Sb₂Te₅ thin films were separated by a barrier metal, TiN, and the individual thicknesses were varied, but the total thickness was fixed at 200 nm. All cell structures exhibited relatively stable multi-level states of high-middle-low resistance (HR-MR-LR), which guarantee the reliability of the multilevel phase-change random access memory (PRAM). The amorphousto-multilevel crystallization rate was evaluated from a graph of resistance (R) vs. pulse duration (T) obtained by the nanoscaled pulse sweeping at a fixed applied voltage (12 V). For all structures, the phase-change rates of HR→MR and MR→LR were estimated to be approximately t<20 ns and t<40 ns, respectively, and the states were relatively stable. We believe that the doublestack structure of an appropriate Ge-Sb-Te film separated by barrier metal (TiN) can be optimized for high-speed and stable multilevel PRAM.

• 대한전자공학회논문지SD
• /
• 제45권5호
• /
• pp.19-25
• /
• 2008

본 연구에서는 유기반도체인 펜타센과 소스-드레인 금속전극사이에 $C_{60}$을 홀주입층으로 적용한 유기박막트랜지스터를 제작하여 $C_{60}$을 삽입하지 않은 소자와의 전기적특성을 비교하였다. $C_{60}/Au$ 이중전극을 사용한 소자의 경우 Au단일전극을 사용한 소자와 비교하였을 때 전하이동도는 0.298 $cm^2/V{\cdot}s$에서 0.452 $cm^2/V{\cdot}s$ 문턱전압의 경우 -13.3V에서 -10.8V로 향상되었으며, contact resistance를 추출하여 비교하였을 경우 감소함을 확인할 수 있었다. 이러한 성능의 향상은 $C_{60}$을 Au와 pentacene 사이에 삽입하였을 경우 Au-pentacene 간의 원하지 않는 화학적 반응을 막아줌으로써 홀 주입장벽를 감소시켜 홀 주입이 향상되었기 때문이다. 또한 Al을 전극으로 적용한 OTFT도 제작하였다. 기존에 Al은 OTFT에 단일전극으로 사용하였을 경우 둘간의 높은 홀 주입장벽으로 인해 채널이 거의 형성되지 않았으나, $C_{60}/Al$ 이중전극을 사용한 소자의 경우 전하이동도와 전류점멸비은 0.165 $cm^2/V{\cdot}s$, $1.4{\times}10^4$ 으로써 Al를 단일전극으로 사용하는 소자의 전기적 특성에 비해 크게 향상되어진 소자를 제작할 수 있었다. 이는 $C_{60}$과 Al이 접합시에 interface dipole의 형성으로 Al의 vacuum energy level이 변화로 인한 Al의 work function이 증가되어 pentacene과 Al간의 hole injection barrier가 감소되었기 때문이다.

• 한국지하수토양환경학회:학술대회논문집
• /
• 한국지하수토양환경학회 2005년도 총회 및 춘계학술발표회
• /
• pp.202-210
• /
• 2005

In this study, the fly ash was employed as a possible alternative to the bentonite for its high sorption capacity against cationic heavy metal. To consider the constituents of barrier possibly used, the specimens were mixed with different material contents (fly ash : weathered soil : bentonite), then sorption test was performed. Also the specimens were molded on the wet side of optimum moisture contents like mixing ratio of sorption test and their hydraulic conductivities were measured in flexible-wall permeameters. And to confirm the effect of dissolved cations, the hydraulic conductivity tests were repeated by converting the permeant liquids from water to $Cd^{2+}$ solution. Finally, the Cd-concentration at the effluent was analyzed for 500hrs to compare the effectiveness of each specimen in contaminant retardation. Test results showed that the more the ratio of fly ash increase, the more Kd value increase, and the hydraulic conductivity of weathered soil/bentonite (95:5) mixture was the lowest $(2.9*10^{-8}cm/sec)$, and specimens made of fly ash and fly ash/weathered soil mixtures showed similar hydraulic conductivity. Although the permeant liquid was changed from water to $Cd^{2+}$ solution, the hydraulic conductivity of all specimens except for weathered soil maintained similarly like before. Consequently, the initial breakthrough point of Cd in weathered soil specimen was observed at about 5hrs after the test started while that of fly ash specimens was not observed during the whole test period of 500hrs. The results implied that fly ash had a sufficient retardation capacity against contaminant transport possibly by its high sorption capacity although it showed little effect on the reduction of hydraulic conductivity. Based on the test results, it could be concluded that the fly ash can be possibly used as a suitable barrier material in containment system to attenuate the contaminant transport for its high retardation capacity and for the low cost.

• 터널과지하공간
• /
• 제31권5호
• /
• pp.333-359
• /
• 2021

고준위방사성폐기물 처분시스템에서는 처분용기 인근에서 용기 금속 물질의 부식 등 여러 이유로 인해 수소, 라돈 등의 기체가 발생할 수 있다. 기체 발생 속도가 투수계수가 낮은 벤토나이트 완충재 공극에서의 기체 확산 속도보다 커질 경우, 형성된 기체가 축적된다. 기체 압력이 증가하여 유입 압력에 도달하면 완충재 내부로 기체의 팽창 흐름 및 이류가 발생하게 된다. 기체의 급격한 팽창 흐름 발생 시 방사성 핵종이 완충재 외부로 유출될 가능성이 있으므로, 처분시설의 설계 과정에서 점토 기반 물질에서의 기체 유동의 영향성 및 공학적방벽의 건전성을 평가하기 위해 기체 이동 현상에 대한 거동 특성을 명확하게 규명할 필요가 있다. 전세계적으로 벤토나이트 완충재 내 기체 이동 현상 규명을 위한 실험적 연구와 이를 모사할 수 있는 전산 수치 모델 개발 연구가 활발히 진행되고 있다. 본 기술보고에서는 현재까지 수행된 기체 주입 시험 및 전산 수치모델 관련 주요연구를 소개하고 향후 기체 이동 현상 규명을 위한 연구 수행 방향에 대해 정리하였다.

• 대한전자공학회:학술대회논문집
• /
• 대한전자공학회 2000년도 하계종합학술대회 논문집(2)
• /
• pp.310-313
• /
• 2000

In this study, the Au/Ni and Au/Ni/Si/Ni layers prepared by electron beam evaporation were used to form ohmic contacts on p-type GaN. Before rapid thermal annealing, the current-voltage(I-V) characteristic of Au/Ni and Au/Ni/Si/Ni contact on p-type GaN film shows non-ohmic behavior. A Specific contact resistance as 3.4$\times$10$^{-4}$ Ω-$\textrm{cm}^2$ was obtained after 45$0^{\circ}C$-RTA. The Schottky barrier height reduction may be attributed to the presence of Ga-Ni and Ga-Au compounds, such as Ga$_4$Ni$_3$, Ga$_4$Ni$_3$, and GaAu$_2$ at the metal - semiconductor interface. The mixing behaviors of both Ni and Au have been studied by using X-ray photoelectron spectroscopy. In addition, X-ray diffraction measurements indicate that the Ni$_3$N, NiGa$_4$, Ni$_2$Si, and Ni$_3$Si$_2$ Compounds were formed at the metal-semiconductor interface.

• 마이크로전자및패키징학회지
• /
• 제9권2호
• /
• pp.1-9
• /
• 2002

실제 BGA패키지에서 Sn-Ag-(Cu) 솔더와 금속패드가 반응하여 생성된 금속간 화합물의 특성을 Scanning Electron Microscopy (SEM), Energy Dispersive Spectroscopy (EDS)f) X-ray Diffractometer (XRD)를 사용하여 분석하였다. EDS로 분석한 결과를 보면 BGA 패키지에서 Sn-Ag-Cu 솔더와 Au/Ni/Cu 금속층간의 반응으로 생성된 금속간화합물은 $(Cu,Ni)_6Sn_5$로 예상되며 . Cu의 편석은 솔더와 Ni 층 사이에서 발견되었다. XRD 분석결과 Cu를 함유하고 있는 Sn-Ag-Cu 솔더와 Ni층 사이에서는 $\eta -Cu_6 Sn_5$ 타입의 금속간화합물이 분석되었으며 Sn-Ag 솔더와 Ni층 사이에서는 $Ni_3$Sn_4$가 분석되었다. 계면에 생성된 금속간화합물은 리플로 회수와솔더내의 Cu의 함량에 따라증가하였다

• 한국대기환경학회지
• /
• 제30권6호
• /
• pp.577-585
• /
• 2014

A series of experiments using atmospheric-pressure non-thermal plasma coupled with transition metal catalysts were performed to remove ethylene from agricultural storage facilities. The non-thermal plasma was created by dielectric barrier discharge, which was in direct contact with the catalyst pellets. The transition metals such as Ag and $V_2O_5$ were supported on ${\gamma}-Al_2O_3$. The effect of catalyst type, specific input energy (SIE) and oxygen content on the removal of ethylene was examined to understand the behavior of the hybrid plasma-catalytic reactor system. With the other parameters kept constant, the plasma-catalytic activity for the removal of ethylene was in order of $V_2O_5/{\gamma}-Al_2O_3$ > $Ag/{\gamma}-Al_2O_3$ > ${\gamma}-Al_2O_3$ from high to low. Interestingly, the rate of plasma-catalytic ozone generation was in order of $V_2O_5/{\gamma}-Al_2O_3$ > ${\gamma}-Al_2O_3$ > $Ag/{\gamma}-Al_2O_3$, implying that the catalyst activation mechanisms by plasma are different for different catalysts. The results obtained by varying the oxygen content indicated that nitrogen-derived reactive species dominated the removal of ethylene under oxygen-lean condition, while ozone and oxygen atoms were mainly involved in the removal under oxygen-rich condition. When the plasma was coupled with $V_2O_5/{\gamma}-Al_2O_3$, nearly complete removal of ethylene was achieved at oxygen contents higher than 5% by volume (inlet ethylene: 250 ppm; gas flow rate: $1.0Lmin^{-1}$; SIE: ${\sim}355JL^{-1}$).

• 한국태양에너지학회:학술대회논문집
• /
• 한국태양에너지학회 2009년도 춘계학술발표대회 논문집
• /
• pp.214-219
• /
• 2009

In high-efficiency crystalline silicon solar cells, If high-efficiency solar cells are to be commercialized. It is need to develop superior contact formation method and material that can be inexpensive and simple without degradation of the solar cells ability. For reason of plated metallic contact is not only high metallic purity but also inexpensive manufacture. It is available to apply mass production. Especially, Nickel, Copper and Silver are applied widely in various electronic manufactures as easily formation is available by plating. The metallic contact system of silicon solar cell must have several properties, such as low contact resistance, easy application and good adhesion. Ni is shown to be a suitable barrier to Cu diffusion as well as desirable contact metal to silicon. Nickel monosilicide(NiSi) has been suggested as a suitable silicide due to its lower resistivity, lower sintering temperature and lower layer stress than $TiSi_2$. Copper and Silver can be plated by electro & light-induced plating method. Light-induced plating makes use the photovoltaic effect of solar cell to deposite the metal on the front contact. The cell is immersed into the electrolytic plating bath and irradiated at the front side by light source, which leads to a current density in the front side grid. Electroless plated Ni/ Electro&light-induced plated Cu/ Light-induced plated Ag contact solar cells result in an energy conversion efficiency of 14.68 % on $0.2{\sim}0.6{\Omega}{\cdot}cm,\;20{\times}20mm^2$, CZ(Czochralski) wafer.

• 한국재료학회지
• /
• 제10권1호
• /
• pp.90-96
• /
• 2000

Underlayer의 종류 및 두께가 Al 박막의 배향성 및 면저항 변화에 미치는 영향을 연구하였다. Al의 underlayer로서 sputtering 방식으로 증착되는 Ti와 TiN이 적층된 구조인 Ti/TiN이 사용되었으며, 각각에 대해 두께를 변화시키면서 Al 박막의 배향성, 면저항을 조사하였고, $400^{\circ}C,\;N_2$ 분위기에서 열처리하면서 면저항의 변화를 조사하였다. Ti만을 Al의 underlayer로 사용한 경우, Ti두께가 10nm 이상이면 우수한 Al <111> 배향성을 나타냈으며 Al-Ti 반응 때문에 열처리 후 Al 배선의 면저항이 크게 상승하였다. Ti와 Al사이에 TiN을 적용함에 의해 Al <111> 배향성은 나빠지나 Al-Ti 반응에 의한 면저항의 증가는 억제할 수 있었다. Ti/TiN underlayer의 경우, 우수한 Al <111> 배향성을 확보하기 위한 Ti의 최소두께는 20nm이었고, Al-Ti 반응을 억제하기 위한 TiN의 최소두께는 20nm이었다.

• 센서학회지
• /
• 제29권4호
• /
• pp.266-269
• /
• 2020

In this study, we investigated the effect of a sulfur passivation (S-passivation) process step on the electrical properties of surface-channel In_0.7Ga_0.3As quantum-well (QW) metal-oxide-semiconductor field-effect transistors (MOSFETs) with S/D regrowth contacts. We fabricated long-channel In_0.7Ga_0.3As QW MOSFETs with and without (NH₄)₂S treatment and then deposited 1/4 nm of Al₂O₃/HfO₂ through atomic layer deposition. The devices with S-passivation exhibited lower values of subthreshold swing (74 mV/decade) and drain-induced barrier lowering (19 mV/V) than the devices without S-passivation. A conductance method was applied, and a low value of interface trap density D_it (2.83×10¹² cm^-2eV^-1) was obtained for the devices with S-passivation. Based on these results, interface traps between InGaAs and high-κ are other defect sources that need to be considered in future studies to improve III-V microsensor sensing platforms.