• Korean Chemical Engineering Research
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• 제59권1호
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• pp.100-105
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• 2021

본 연구는 적은 비용으로 분석 장치 없이 질병 진단 및 경과를 모니터링할 수 있는 종이-기반 분석 장치(paper-based analytical device, PAD)를 제작하기 위해 polydimethylsiloxane (PDMS) 블레이드 코팅 방법을 제안하였다. PAD 디자인은 레이저 커팅 기술로 쉽게 몰드에 적용할 수 있으며, 제작된 몰드로 블레이드 코팅을 수행하여 완전한 소수성 장벽 형성에 필요한 조건을 확립하였다. 코팅 조건인 잉크의 두께와 종이와의 접촉시간에 따라 PDMS 소수성 장벽의 구조와 친수성 채널의 크기 변화를 분석하여 안정적으로 소수성 장벽을 형성할 수 있는 조건을 최적화하였다. 최적화된 방법을 바탕으로 PAD를 제작하여 특별한 분석기기 없이 단백질, 당, 메탈이온을 검출하여 바이오센서에 응용가능함을 증명하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.260-260
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• 2009

In high-efficiency crystalline silicon solar cell, If high-efficiency solar cells are to be commercialized, It is need to develop superior contact formation method and material that can be inexpensive and simple without degradation of the solar cells ability. For reason of plated metallic contact is not only high metallic purity but also inexpensive manufacture. It is available to apply mass production. Especially, Nickel, Copper are applied widely in various electronic manufactures as easily formation is available by plating. Ni is shown to be a suitable barrier to Cu diffusin as well as desirable contact metal to silicon. Nickel monosilicide has been suggested as a suitable silicide due to its lower resistivitym lower sintering temperature and lower layer stress than $TiSi_2$. In this paper, Nickel as a seed layer and diffusion barrier is plated by electroless plating to make nickel monosilicide.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.34-34
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• 2009

The electrical characteristics of tunnel barrier engineered charge trap flash (TBE-CTF) memory with $SiO_2/Si_3N_4/SiO_2/Si$ engineered tunnel barrier, $HfO_2$ charge trap layer and $Al_2O_3$ blocking oxide layer (MAHONOS) were investigated. The energy bad diagram was designed by using the quantum-mechanical tunnel model (QM) and then the CTF memory devices were fabricated. As a result, the best thickness combination of MAHONOS is confirmed. Moreover, not enhanced P/E speed (Program: about $10^6$ times) (Erase: about $10^4$ times) but also enhanced retention and endurance characteristics are represented.

• E2M - 전기 전자와 첨단 소재
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• 제7권6호
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• pp.473-480
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• 1994

The electron tunnel effect in polvimide LB films sandwiched between metal electrodes has been investigated in the present work by a study of both the elastic and inelastic tunneling components. By the results of elastic tunneling experiments in Au/Pl/Au tunneling junction, we can judge the height and thickness of tunnel barrier. The inelastic current in Inelastic Electron Tunneling Spectroscopy(IETS) is due to the interaction of the tunneling electron with the vibrational modes of the molecular species in the barrier. Measurements are done on Au/PI/Pb tunneling junctions. The spectra obtained are the second derivatives of the current-voltage characteristics of these junctions : specifically, d$^{2}$1/dV$^{2}$ as a function of voltage V. Because the energies measured by IETS can be directly compared to those measured by infrared and Raman spectroscopy, IR-RAS spectroscopy also measured for reference.

• Toxicological Research
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• 제29권3호
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• pp.157-164
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• 2013

Although stroke is one of the leading causes of death and disability worldwide, preventive or therapeutic options are still limited. Therefore, a better understanding of the pathophysiological characteristics of this life-threatening disease is urgently needed. The incidence and prevalence of ischemic stroke are increased by exposure to certain types of xenobiotics, including heavy metals, suggesting the possible toxicological contribution of these compounds to the onset or aggravation of stroke. Among the potential targets, we have focused on alterations to cerebral endothelial cells (CECs), which play important roles in maintaining the functional integrity of brain tissue.

• 대한용접접합학회:학술대회논문집
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• 대한용접접합학회 2006년도 춘계 학술대회 개요집
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• pp.45-47
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• 2006

The rotating components in the hot sections of land-based gas turbine are exposed to severe environments during several tens thousand operation hours at above $1100^{\circ}C$ operation temperature. To protect such components from high temperature oxidation, an intermediate bond coat is applied, typical of a MCrAlY-type metal alloy. This study is concerned with the thermal cyclic behavior of thermal barrier coatings. The MCrAlY bond coatings are deposited by HVOF (High Velocity Oxygen Fuel) method on a nickel-based superalloy (GTD-111). Thermal cyclic tests at $1100^{\circ}C$ in ambient air for various periods of time were used to evaluate the thermal cyclic resistance of the TBC coating. The microstructure and morphology of as-sprayed and of thermal cycled coatings were characterized by scanning electron microscopy (SEM) equipped with energy dispersive spectroscopy (EDS) and X-ray diffraction (XRD).

• 한국표면공학회지
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• 제43권5호
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• pp.248-254
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• 2010

Porous $Al_2O_3$ film can be utilized as template for fabrication of nano-structured materials. Porous anodic alumina layer as template was prepared by anodization of aluminum in oxalic acid, and the pore diameter and barrier-type alumina layer can be controlled for proper anodizing parameter by widening process in $H_3PO_4$ solution. The $SiO_2$ nanodot and Ni nanowire was fabricated using anodic alumina template and their characteristics were investigated using SEM and TEM with EDS. Especially the growth mechanism of $SiO_2$ nanodot in alumina membrane compared with thinning of the alumina barrier layer during anodization was also investigated.

• EDISON SW 활용 경진대회 논문집
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• 제6회(2017년)
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• pp.372-375
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• 2017

Metal-oxide-semiconductor Field-Effect transistor (MOSFET)을 대체할 기술로서 제안된 Schottky Barrier MOSFET (SB-MOSFET)가 제시되고 있다. 본 연구에서는 SB-MOSFET와 MOSFET을 다양한 소자 파라미터를 변화시킴으로서 양자역학적 전하수송 계산을 바탕으로 특성을 분석한다. MOSFET과 SB-MOSFET은 채널 두께 ($T_{Si}$)가 감소함에 따라 전류량은 증가하고 SS와 DIBL은 증가하였고 Overlap에서는 SS와 DIBL이 커지고 Underlap에서는 작아짐을 보였고 SB-MOSFET는 특히 그 폭이 컸다. 또한 SB 높이가 낮을수록 SB-MOSFET의 전류량이 증가하고 SS는 감소하였고 마찬가지로 Source와 Drain doping concentration이 낮을수록 MOSFET의 전류량은 증가하고 SS는 감소하였다. MOSFET과 SB-MOSFET의 경향은 대체로 비슷하나 변화량의 차이 등이 있었다.

• Transactions on Electrical and Electronic Materials
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• 제5권5호
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• pp.173-179
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• 2004

The influence of heavily Si impurity doping in the GaN barrier of InGaN/GaN multi-quantum well structures of blue light emitting diodes were investigated by growing samples in metal-organic chemical vapor deposition. The delta-doped sample was compared to the sample with the undoped barrier. The delta-doped sample shows the tunneling behavior and forms the energy level of 0.32 eV for tunneling and the photoemission of the 450-nm band. The photo-luminescence shows the blue-shifted broad band of the radiative transition due to the inclusion of Si delta-doped layer indicating that the delta doping effect acts to form the higher energy level than that of quantum well. The dislocation may provide the carrier tunneling channel and plays as a source of acceptor. During the tunneling of hot carrier, there was no light emission.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2000년도 추계학술대회 논문집 학회본부 C
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• pp.440-442
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• 2000

We have successfully fabricated SiC Schottky diodes using Al, Ni, Ti metallization systems. Schottky barrier height and other parameter have been measured by using I-V and C-V technique. The measured barreir heights depend on the metal and measurement techniques used. The barrier heights were 1.85eV(Al), 1.63eV(Ni), 0.97eV(Ti). The Ideality factors were 1.16(Al), 1.07(Ni), 1.05(Ti). Thermal stress tests were performed.